摘要:
A memory cell circuit of an associative memory composed of only four NMOS transistors is disclosed. Each memory cells of the circuit is connected two bit lines, a word line, a match setup line for commanding coincidence detection, and a match line for transferring the results of detection. The data signals are stored in the gate capacity of each of the transistors 3. This simplified memory cell circuit contributes to higher integration of the associative memory.
摘要:
Implementations and techniques are generally disclosed for an actuator comprising: a first element, a second element, a third element, a first joint provided between the first element and the second element, a second joint provided between the second element and the third element, and a motor operably coupled to the first joint and configured such that the second element rotates with respect to the first element about a first rotational axis when the motor rotates, wherein the first joint is operably coupled to the second joint and configured such that the third element can rotate with respect to the second element about a second rotational axis when the motor rotates.
摘要:
Embodiments provided herein generally relate to robotic limbs and uses thereof. In some embodiments, the motor for driving movement of the limb can itself be repositioned, thereby altering the forces and/or torque involved in moving and/or operating the limb.
摘要:
The present invention relates to a nonvolatile semiconductor memory, and more specifically relates to a nonvolatile semiconductor memory with increased program throughput. The present invention provides a nonvolatile semiconductor memory device with a plurality of block source lines corresponding to the memory blocks, arranged in parallel to the word lines, a plurality of global source lines arranged in perpendicular to the block source lines; and a plurality of switches for selectively connecting corresponding ones of the block source lines and the global source lines.
摘要:
A circuit includes a current generator, a start-up circuit coupled to provide a start-up current to the current generator during a start-up phase of the current generator, and a cut-off circuit coupled to both the current generator and to the start-up circuit to provide a control signal that reduces the start-up current when an output current from the current generator exceeds a threshold value.
摘要:
A circuit includes a current generator, a start-up circuit coupled to provide a start-up current to the current generator during a start-up phase of the current generator, and a cut-off circuit coupled to both the current generator and to the start-up circuit to provide a control signal that reduces the start-up current when an output current from the current generator exceeds a threshold value.
摘要:
In a pin contact test, a voltage across an external pin is measured by setting a voltage to be supplied to the power supply nodes in input protection circuits in their respective chips at a prescribed amount by means of voltage control circuits and by supplying a prescribed constant current to external pin. Based on the measurement results, a pin contact failure in chips can be detected.
摘要:
A transistor operating as a current source supplying a memory cell with a current is configured to operate in a saturation range when a node subjected to a decision as to whether a memory cell has a high or low level has a voltage in a range of no more than a threshold voltage.
摘要:
A semiconductor memory device performs a normal boost operation and increases access speed of the operation. The semiconductor memory device includes: a plurality of memory cells; a plurality of word lines to which voltages are applied to select the plurality of memory cells; a decoder that selects one of the plurality of word lines based on an address signal representing an address of one of the plurality of memory cells to be accessed; a control circuit that outputs an activated control signal and an deactivated control signal according to a transition of the address signal; and a booster that has a plurality of booster circuits including first booster circuit and second booster circuit. The first booster circuit is connected to the decoder and supplies boosted voltage to a selected word line based on the activated control signal. The second booster circuit is input the deactivated control signal.
摘要:
Output nodes (Noutn, Noutp) outputting a negative potential (VN) and a positive potential (VPS) respectively are supplied with fixed potentials by reset circuits respectively when unused. Switches (SW2, SW3) conduct when generating the negative potential, while switches (SW1, SW4) conduct when generating the positive potential. Reference potentials for the generated potentials are supplied to internal nodes N10, N20) through the switches (SW1, SW3) respectively. Poly-diode elements are employed for a voltage generation part, whereby a charge pump circuit capable of generating positive and negative voltages can be implemented without remarkably changing a fabrication method.