Associative memory having simplified memory cell circuitry
    51.
    发明授权
    Associative memory having simplified memory cell circuitry 失效
    具有简化的存储单元电路的关联存储器

    公开(公告)号:US4965767A

    公开(公告)日:1990-10-23

    申请号:US380428

    申请日:1989-07-17

    IPC分类号: G11C15/04

    CPC分类号: G11C15/043 G11C15/04

    摘要: A memory cell circuit of an associative memory composed of only four NMOS transistors is disclosed. Each memory cells of the circuit is connected two bit lines, a word line, a match setup line for commanding coincidence detection, and a match line for transferring the results of detection. The data signals are stored in the gate capacity of each of the transistors 3. This simplified memory cell circuit contributes to higher integration of the associative memory.

    摘要翻译: 公开了仅由四个NMOS晶体管组成的相关存储器的存储单元电路。 电路的每个存储单元连接两个位线,字线,用于命令一致检测的匹配设置线和用于传送检测结果的匹配线。 数据信号以每个晶体管3的栅极容量存储。这种简化的存储单元电路有助于关联存储器的更高的集成。

    Actuator with joints
    52.
    发明授权
    Actuator with joints 有权
    执行器与关节

    公开(公告)号:US09267585B2

    公开(公告)日:2016-02-23

    申请号:US13823193

    申请日:2011-06-02

    申请人: Masaaki Mihara

    发明人: Masaaki Mihara

    IPC分类号: F16H19/08

    CPC分类号: F16H19/08 Y10T74/1888

    摘要: Implementations and techniques are generally disclosed for an actuator comprising: a first element, a second element, a third element, a first joint provided between the first element and the second element, a second joint provided between the second element and the third element, and a motor operably coupled to the first joint and configured such that the second element rotates with respect to the first element about a first rotational axis when the motor rotates, wherein the first joint is operably coupled to the second joint and configured such that the third element can rotate with respect to the second element about a second rotational axis when the motor rotates.

    摘要翻译: 通常公开了用于致动器的实现和技术,包括:第一元件,第二元件,第三元件,设置在第一元件和第二元件之间的第一接头,设置在第二元件和第三元件之间的第二接头,以及 电动机,其可操作地联接到所述第一接头并且被配置为使得当所述电动机旋转时,所述第二元件相对于所述第一元件围绕第一旋转轴线旋转,其中所述第一接头可操作地联接到所述第二接头并且被配置为使得所述第三元件 当电动机旋转时,它可相对于第二元件围绕第二旋转轴线旋转。

    Nonvolatile Semiconductor Memory Device
    54.
    发明申请
    Nonvolatile Semiconductor Memory Device 有权
    非易失性半导体存储器件

    公开(公告)号:US20100149875A1

    公开(公告)日:2010-06-17

    申请号:US12714750

    申请日:2010-03-01

    IPC分类号: G11C16/04 G11C7/10 G11C16/06

    CPC分类号: G11C16/3436

    摘要: The present invention relates to a nonvolatile semiconductor memory, and more specifically relates to a nonvolatile semiconductor memory with increased program throughput. The present invention provides a nonvolatile semiconductor memory device with a plurality of block source lines corresponding to the memory blocks, arranged in parallel to the word lines, a plurality of global source lines arranged in perpendicular to the block source lines; and a plurality of switches for selectively connecting corresponding ones of the block source lines and the global source lines.

    摘要翻译: 非易失性半导体存储器技术领域本发明涉及非易失性半导体存储器,更具体地说涉及具有增加的程序吞吐量的非易失性半导体存储器 本发明提供了一种非易失性半导体存储器件,具有对应于与字线平行布置的存储块的多个块源极线,与块源极线垂直的多个全局源极线; 以及用于选择性地连接块源极线和全局源极线中的对应的多个开关。

    Start-up circuit for a current generator
    55.
    发明授权
    Start-up circuit for a current generator 有权
    电流发生器的启动电路

    公开(公告)号:US07312601B2

    公开(公告)日:2007-12-25

    申请号:US10945721

    申请日:2004-09-21

    申请人: Masaaki Mihara

    发明人: Masaaki Mihara

    IPC分类号: G05F3/04

    CPC分类号: G05F1/468 Y10S323/901

    摘要: A circuit includes a current generator, a start-up circuit coupled to provide a start-up current to the current generator during a start-up phase of the current generator, and a cut-off circuit coupled to both the current generator and to the start-up circuit to provide a control signal that reduces the start-up current when an output current from the current generator exceeds a threshold value.

    摘要翻译: 电路包括电流发生器,启动电路,其耦合以在电流发生器的启动阶段期间向电流发生器提供启动电流;以及截止电路,其耦合到电流发生器和至 启动电路以提供当来自电流发生器的输出电流超过阈值时降低启动电流的控制信号。

    Start-up circuit for a current generator
    56.
    发明申请
    Start-up circuit for a current generator 有权
    电流发生器的启动电路

    公开(公告)号:US20060061345A1

    公开(公告)日:2006-03-23

    申请号:US10945721

    申请日:2004-09-21

    申请人: Masaaki Mihara

    发明人: Masaaki Mihara

    IPC分类号: G05F3/04

    CPC分类号: G05F1/468 Y10S323/901

    摘要: A circuit includes a current generator, a start-up circuit coupled to provide a start-up current to the current generator during a start-up phase of the current generator, and a cut-off circuit coupled to both the current generator and to the start-up circuit to provide a control signal that reduces the start-up current when an output current from the current generator exceeds a threshold value.

    摘要翻译: 电路包括电流发生器,启动电路,其耦合以在电流发生器的启动阶段期间向电流发生器提供启动电流;以及截止电路,其耦合到电流发生器和至 启动电路以提供当来自电流发生器的输出电流超过阈值时降低启动电流的控制信号。

    Semiconductor integrated circuit allowing proper detection of pin contact failure
    57.
    发明授权
    Semiconductor integrated circuit allowing proper detection of pin contact failure 失效
    半导体集成电路允许正确检测引脚接触故障

    公开(公告)号:US06900628B2

    公开(公告)日:2005-05-31

    申请号:US10136398

    申请日:2002-05-02

    CPC分类号: G01R31/2853

    摘要: In a pin contact test, a voltage across an external pin is measured by setting a voltage to be supplied to the power supply nodes in input protection circuits in their respective chips at a prescribed amount by means of voltage control circuits and by supplying a prescribed constant current to external pin. Based on the measurement results, a pin contact failure in chips can be detected.

    摘要翻译: 在引脚接触测试中,通过设置通过电压控制电路将规定量的各个芯片中的输入保护电路中的输入保护电路中的电源节点设置为电压,并通过提供规定的常数来测量外部引脚上的电压 电流到外部引脚。 基于测量结果,可以检测到芯片中的引脚接触故障。

    Semiconductor memory device having booster circuits
    59.
    发明授权
    Semiconductor memory device having booster circuits 失效
    具有升压电路的半导体存储器件

    公开(公告)号:US06768688B2

    公开(公告)日:2004-07-27

    申请号:US10191418

    申请日:2002-07-10

    申请人: Masaaki Mihara

    发明人: Masaaki Mihara

    IPC分类号: G11C700

    CPC分类号: G11C8/08 G11C16/08 G11C16/30

    摘要: A semiconductor memory device performs a normal boost operation and increases access speed of the operation. The semiconductor memory device includes: a plurality of memory cells; a plurality of word lines to which voltages are applied to select the plurality of memory cells; a decoder that selects one of the plurality of word lines based on an address signal representing an address of one of the plurality of memory cells to be accessed; a control circuit that outputs an activated control signal and an deactivated control signal according to a transition of the address signal; and a booster that has a plurality of booster circuits including first booster circuit and second booster circuit. The first booster circuit is connected to the decoder and supplies boosted voltage to a selected word line based on the activated control signal. The second booster circuit is input the deactivated control signal.

    摘要翻译: 半导体存储器件执行正常升压操作并增加操作的存取速度。 半导体存储器件包括:多个存储单元; 施加电压以选择多个存储单元的多个字线; 解码器,其基于表示要访问的所述多个存储器单元之一的地址的地址信号来选择所述多个字线中的一个; 控制电路,其根据所述地址信号的转换来输出激活的控制信号和去激活控制信号; 以及具有包括第一升压电路和第二升压电路的多个升压电路的升压器。 第一升压电路连接到解码器,并且基于激活的控制信号将提升的电压提供给选定的字线。 第二升压电路输入去激活控制信号。

    Semiconductor device capable of generating a plurality of voltages
    60.
    发明授权
    Semiconductor device capable of generating a plurality of voltages 失效
    能够产生多个电压的半导体器件

    公开(公告)号:US06429724B1

    公开(公告)日:2002-08-06

    申请号:US09699370

    申请日:2000-10-31

    IPC分类号: G05F110

    摘要: Output nodes (Noutn, Noutp) outputting a negative potential (VN) and a positive potential (VPS) respectively are supplied with fixed potentials by reset circuits respectively when unused. Switches (SW2, SW3) conduct when generating the negative potential, while switches (SW1, SW4) conduct when generating the positive potential. Reference potentials for the generated potentials are supplied to internal nodes N10, N20) through the switches (SW1, SW3) respectively. Poly-diode elements are employed for a voltage generation part, whereby a charge pump circuit capable of generating positive and negative voltages can be implemented without remarkably changing a fabrication method.

    摘要翻译: 分别输出负电位(VN)和正电位(VPS)的输出节点(Noutn,Noutp)分别由未使用时由复位电路提供固定电位。 当产生负电位时,开关(SW2,SW3)导通,而开关(SW1,SW4)在产生正电位时导通。 所产生的电位的参考电位分别通过开关(SW1,SW3)提供给内部节点N10,N20)。 多极二极管元件用于电压产生部分,由此可以实现能够产生正和负电压的电荷泵电路,而不显着地改变制造方法。