公开(公告)号：US07532322B2

公开(公告)日：2009-05-12

申请号：US11566340

申请日：2006-12-04

申请人： Chishio Koshimizu ,  Tatsuo Matsudo ,  Sumie Segawa

发明人： Chishio Koshimizu ,  Tatsuo Matsudo ,  Sumie Segawa

IPC分类号： G01J3/30

CPC分类号： G01N21/68 ,  H01J37/32174 ,  H01J37/32935 ,  H01J37/32972 ,  H01L21/31116

摘要： An apparatus for measuring plasma electron density precisely measures electron density in plasma even under a low electron density condition or high pressure condition. This plasma electron density measuring apparatus includes a vector network analyzer in a measuring unit, which measures a complex reflection coefficient and determines a frequency characteristic of an imaginary part of the coefficient. A resonance frequency at a point where the imaginary part of the complex reflection coefficient is zero-crossed is read and the electron density is calculated based on the resonance frequency by a measurement control unit.

摘要翻译： 用于测量等离子体电子密度的装置即使在低电子密度条件或高压条件下也能精确地测量等离子体中的电子密度。 该等离子体电子密度测量装置包括测量单元中的矢量网络分析仪，其测量复数反射系数并确定系数的虚部的频率特性。 读取复数反射系数的虚部为零交叉点的共振频率，并且通过测量控制单元基于谐振频率计算电子密度。

公开(公告)号：US20070236148A1

公开(公告)日：2007-10-11

申请号：US11756097

申请日：2007-05-31

申请人： Yohei Yamazawa ,  Manabu Iwata ,  Chishio Koshimizu ,  Fumihiko Higuchi ,  Akitaka Shimizu ,  Asao Yamashita ,  Nobuhiro Iwama ,  Tsutomu Higashiura ,  DongSheng Zhang ,  Michiko Nakaya ,  Norikazu Murakami

发明人： Yohei Yamazawa ,  Manabu Iwata ,  Chishio Koshimizu ,  Fumihiko Higuchi ,  Akitaka Shimizu ,  Asao Yamashita ,  Nobuhiro Iwama ,  Tsutomu Higashiura ,  DongSheng Zhang ,  Michiko Nakaya ,  Norikazu Murakami

IPC分类号： H01L21/3065

CPC分类号： H01J37/32174 ,  H01J37/321

摘要： An apparatus, which performs a plasma process on a target substrate by using plasma, includes first and second electrodes in a process chamber to oppose each other. An RF field, which turns a process gas into plasma by excitation, is formed between the first and second electrodes. An RF power supply, which supplies RF power, is connected to the first or second electrode through a matching circuit. The matching circuit automatically performs input impedance matching relative to the RF power. A variable impedance setting section is connected to a predetermined member, which is electrically coupled with the plasma, through an interconnection. The impedance setting section sets a backward-direction impedance against an RF component input to the predetermined member from the plasma. A controller supplies a control signal concerning a preset value of the backward-direction impedance to the impedance setting section.

摘要翻译： 通过使用等离子体在目标基板上进行等离子体处理的装置包括处理室中彼此相对的第一和第二电极。 在第一和第二电极之间形成通过激发将工艺气体转化成等离子体的RF场。 提供RF功率的RF电源通过匹配电路连接到第一或第二电极。 匹配电路自动执行相对于RF功率的输入阻抗匹配。 可变阻抗设定部分通过互连连接到与等离子体电耦合的预定部件。 阻抗设定部分针对从等离子体输入到预定部件的RF分量设置反向阻抗。 控制器将关于反向阻抗的预设值的控制信号提供给阻抗设定部。

公开(公告)号：US20070227664A1

公开(公告)日：2007-10-04

申请号：US11694083

申请日：2007-03-30

申请人： Naoki MATSUMOTO ,  Yoshinobu Hayakawa ,  Hidetoshi Hanaoka ,  Noriaki Kodama ,  Chishio Koshimizu ,  Manabu Iwata ,  Satoshi Tanaka

发明人： Naoki MATSUMOTO ,  Yoshinobu Hayakawa ,  Hidetoshi Hanaoka ,  Noriaki Kodama ,  Chishio Koshimizu ,  Manabu Iwata ,  Satoshi Tanaka

IPC分类号： C23F1/00 ,  C23C16/00

CPC分类号： H01J37/32174 ,  H01J37/32091

摘要： A plasma processing apparatus includes a processing vessel capable of being vacuum evacuated; a first electrode disposed in the processing vessel in a state electrically floating via an insulating member or a space; a second electrode, arranged in the processing vessel to face and be in parallel to the first electrode with a specific interval, supporting a substrate to be processed; a processing gas supply unit for supplying a desired processing gas into a processing space surrounded by the first electrode, the second electrode and a sidewall of the processing vessel; and a first radio frequency power supply unit for applying a first radio frequency power to the second electrode to generate a plasma of the processing gas in the processing space. An electrostatic capacitance between the first electrode and the processing vessel is set such that a desired plasma density distribution is obtained for the generated plasma.

摘要翻译： 一种等离子体处理装置，其特征在于，包括：真空抽真空处理容器; 以处于通过绝缘构件或空间电浮动的状态设置在处理容器中的第一电极; 第二电极，布置在处理容器中以特定间隔面对并平行于第一电极，支撑待处理的基板; 处理气体供给单元，用于将期望的处理气体供给到被处理容器的第一电极，第二电极和侧壁包围的处理空间中; 以及第一射频电源单元，用于向所述第二电极施加第一射频功率以在所述处理空间中产生所述处理气体的等离子体。 第一电极和处理容器之间的静电电容被设定为使得所产生的等离子体获得期望的等离子体密度分布。

公开(公告)号：US20070029194A1

公开(公告)日：2007-02-08

申请号：US11393916

申请日：2006-03-31

申请人： Naoki Matsumoto ,  Hideaki Tanaka ,  Hisashi Fujiwara ,  Chishio Koshimizu ,  Fumiaki Koiwa ,  Toshiyuki Kobayashi ,  Youichi Nakayama ,  Hiroshi Nakamura

发明人： Naoki Matsumoto ,  Hideaki Tanaka ,  Hisashi Fujiwara ,  Chishio Koshimizu ,  Fumiaki Koiwa ,  Toshiyuki Kobayashi ,  Youichi Nakayama ,  Hiroshi Nakamura

IPC分类号： C23C14/00

CPC分类号： H01J37/32165 ,  H01J37/32082 ,  H01J37/32174

摘要： A plasma processing apparatus includes a process container configured to accommodate a target substrate and to be vacuum-exhausted. A first electrode and a second electrode are disposed opposite each other within the process container. A process gas supply unit is configured to supply a process gas into the process container. An RF power supply is configured to apply an RF power to the first electrode or second electrode to generate plasma of the process gas. A DC power supply is configured to apply a DC voltage to the first electrode or second electrode. A control section is configured to control the RF power supply and the DC power supply such that the DC power supply causes the DC voltage applied therefrom to reach a voltage set value, when or after the RF power supply starts applying the RF power.

摘要翻译： 等离子体处理装置包括被配置为容纳目标基板并被抽真空的处理容器。 第一电极和第二电极在处理容器内彼此相对设置。 处理气体供应单元构造成将处理气体供应到处理容器中。 RF电源被配置为向第一电极或第二电极施加RF功率以产生处理气体的等离子体。 DC电源被配置为向第一电极或第二电极施加DC电压。 控制部分被配置为当RF电源开始施加RF功率时或之后，控制RF电源和DC电源，使得DC电源使由其施加的DC电压达到电压设定值。

公开(公告)号：US07018506B2

公开(公告)日：2006-03-28

申请号：US10458239

申请日：2003-06-11

申请人： Toshiaki Hongoh ,  Naoki Matsumoto ,  Chishio Koshimizu

发明人： Toshiaki Hongoh ,  Naoki Matsumoto ,  Chishio Koshimizu

IPC分类号： C23C16/00 ,  H01L21/306

CPC分类号： H01J37/321 ,  C23C16/507 ,  H01J37/32091

摘要： A plasma processing apparatus comprises a plate that separates a high frequency induction antenna from a vacuum chamber. The plate comprises a nonmagnetic metal plate that has an opening and a dielectric material member that seals the opening. The area of the nonmagnetic metal plate is larger than the area of the dielectric material member.

摘要翻译： 等离子体处理装置包括将高频感应天线与真空室分离的板。 板包括具有开口的非磁性金属板和密封开口的电介质材料构件。 非磁性金属板的面积大于介电材料构件的面积。

公开(公告)号：US06576860B2

公开(公告)日：2003-06-10

申请号：US10160243

申请日：2002-06-04

申请人： Chishio Koshimizu ,  Jun Ooyabu ,  Hideki Takeuchi ,  Akira Koshiishi

发明人： Chishio Koshimizu ,  Jun Ooyabu ,  Hideki Takeuchi ,  Akira Koshiishi

IPC分类号： B23K1000

CPC分类号： H01J37/32082 ,  H01J37/32165

摘要： A plasma processing method comprises the steps of supplying a low-frequency bias to a first electrode carrying a substrate, and supplying a high-frequency power to a second electrode facing the first electrode, wherein the low-frequency bias is supplied to the first electrode in advance of starting plasma by the energy of the high-frequency power, with an electric power sufficient to form an ion-sheath on the surface of the substrate.

公开(公告)号：US5980687A

公开(公告)日：1999-11-09

申请号：US66736

申请日：1998-04-27

申请人： Chishio Koshimizu

发明人： Chishio Koshimizu

IPC分类号： H01L21/302 ,  C23C14/22 ,  C23C16/44 ,  C23C16/455 ,  H01J37/32 ,  H01L21/3065 ,  C23F1/02 ,  C23C14/00 ,  C23C16/00

CPC分类号： H01J37/3266 ,  C23C14/22 ,  C23C16/45589 ,  H01J37/3244 ,  H01J37/32623

摘要： A plasma process apparatus includes first and second electrodes or susceptors located in a process container with a space interposed therebetween, first and second electrodes being disposed to support a semiconductor wafer such that the wafers are opposed to each other through a plasma a generating region. A high frequency voltages are applied to the first and second electrodes to supply a high frequency power to the plasma generating region, and a rotating magnetic field is generated in the plasma generating region, so that the high frequency power and the rotating magnetic field generate plasma of a process gas in the plasma generating region. Compensating-process-gas supply mechanism is provided for supplying a compensating process gas to part of the plasma generating region in synchronism with the rotation of the rotating magnetic field to compensate nonuniformity in the density of plasma generated in the plasma generating region.

摘要翻译： 等离子体处理装置包括位于处理容器中的第一和第二电极或基座，其中插入有空间，第一和第二电极设置成支撑半导体晶片，使得晶片通过等离子体产生区彼此相对。 向第一和第二电极施加高频电压以向等离子体产生区域提供高频电力，并且在等离子体产生区域中产生旋转磁场，使得高频功率和旋转磁场产生等离子体 的等离子体产生区域中的工艺气体。 提供了补偿处理气体供给机构，用于与等离子体产生区域中产生的等离子体的密度的不均匀性同步地与旋转磁场的旋转同步地向补偿处理气体供给等离子体产生区域的一部分。

公开(公告)号：US5290383A

公开(公告)日：1994-03-01

申请号：US48711

申请日：1993-04-19

申请人： Chishio Koshimizu

发明人： Chishio Koshimizu

IPC分类号： H01J37/32 ,  H01L21/311 ,  H01L21/306 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC分类号： H01J37/32935 ,  H01J37/32963 ,  H01L21/31116 ,  Y10S156/916

摘要： In one aspect of the invention, CHF.sub.3 gas and CF.sub.4 gas (i.e., reactant gases), and argon gas (i.e., plasma-stabilizing gas) are introduced into a vacuum chamber. RF power is then applied between the electrodes within the chamber, thereby generating plasma. The plasma is applied to a substrate placed in the chamber, thus etching the SiO.sub.2 film formed on the substrate. A spectrometer extracts a light beam of a desired wavelength, emitted from the CF.sub.2 radical which contributes to the etching. An end-point detecting section monitors the luminous intensity of the CF.sub.2 radical reacting with SiO.sub.2 during the etching. Once the SiO.sub.2 film has been etched away, the luminous intensity of the CF.sub.2 radical increases. Upon detecting this increase, the section determines that etching has just ended. The selected wavelength ranges from 310 nm to 236 nm, preferably being 219.0 nm, 230.0 nm, 211.2 nm, 232.5 nm, or any one ranging from 224 nm to 229 nm. In another aspect of the invention, the device attached to the observation window of the chamber removes products stuck to the window during the etching. The window thus cleaned, more light than otherwise passes through the window and reaches the spectrometer. This enables the section to detect even a slight change in the luminous intensity of the CF.sub.2 radical, thereby detecting the end point of etching with accuracy.

摘要翻译： 在本发明的一个方面，将CHF 3气体和CF 4气体（即反应气体）和氩气（即等离子体稳定气体）引入真空室。 然后将RF功率施加在室内的电极之间，从而产生等离子体。 将等离子体施加到放置在室中的衬底上，从而蚀刻形成在衬底上的SiO 2膜。 光谱仪提取从有助于蚀刻的CF 2自由基发射的期望波长的光束。 终点检测部分在蚀刻期间监测与SiO 2反应的CF 2自由基的发光强度。 一旦SiO 2膜被蚀刻掉，CF2自由基的发光强度就会增加。 在检测到这种增加时，该部分确定蚀刻刚刚结束。 所选择的波长范围为310nm至236nm，优选为219.0nm，230.0nm，211.2nm，232.5nm或224nm至229nm的任何一个。 在本发明的另一方面，连接到室的观察窗的装置在蚀刻期间去除粘附到窗口的产物。 如此清洁的窗户，比其他方式更光线通过窗户并到达光谱仪。 这使得该部分甚至可以检测到CF2基团的发光强度的轻微变化，从而精确地检测蚀刻的终点。

公开(公告)号：US09349618B2

公开(公告)日：2016-05-24

申请号：US13344267

申请日：2012-01-05

申请人： Jun Yamawaku ,  Chishio Koshimizu

发明人： Jun Yamawaku ,  Chishio Koshimizu

IPC分类号： H01L21/3065 ,  H01L21/67 ,  H01J37/32 ,  H01L21/687

CPC分类号： H01L21/67069 ,  H01J37/32477 ,  H01J37/32559 ,  H01J37/32642 ,  H01L21/68735

摘要： A substrate processing apparatus capable of removing deposits attached on a component of a lower temperature in a gap between two components, temperatures of which are greatly different from each other, without degrading a working ratio of the substrate processing apparatus. In the substrate processing apparatus, a chamber receives a wafer, a focus ring surrounds the wafer disposed in the chamber, a side surface protective member transmits a laser beam, a laser beam irradiating apparatus irradiates the laser beam to the side surface protective member, an inner focus ring of the focus ring is disposed adjacent to the wafer and is cooled down and an outer focus ring surrounds the inner focus ring and is not cooled down in a focus ring, and a facing surface of the side surface protective member faces a gap between the inner focus ring and the outer focus ring.

摘要翻译： 一种基板处理装置，其能够在不降低基板处理装置的加工率的情况下，除去附着在两个部件之间的间隙中的两个部件之间的间隙附近的沉积物，温度彼此大不相同。 在基板处理装置中，室接收晶片，聚焦环围绕设置在室中的晶片，侧面保护构件透射激光束，激光束照射装置将激光束照射到侧面保护构件， 聚焦环的内聚焦环与晶片相邻地设置并被冷却，并且外聚焦环围绕内聚焦环，并且在聚焦环中不被冷却，并且侧表面保护构件的面对表面 在内聚焦环和外聚焦环之间。

公开(公告)号：US08825434B2

公开(公告)日：2014-09-02

申请号：US13248538

申请日：2011-09-29

申请人： Chishio Koshimizu ,  Jun Yamawaku ,  Tatsuo Matsudo

发明人： Chishio Koshimizu ,  Jun Yamawaku ,  Tatsuo Matsudo

IPC分类号： G01K11/00 ,  G01K11/12 ,  G01B11/06 ,  G01B9/02

CPC分类号： G01K11/125 ,  G01B9/02021 ,  G01B9/02025 ,  G01B9/0209 ,  G01B11/0675

摘要： A temperature measuring method includes: transmitting a light to a measurement point of an object to be measured, the object being a substrate on which a thin film is formed; measuring a first interference wave caused by a reflected light from a surface of the substrate, and a second interference wave caused by reflected lights from an interface between the substrate and the thin film and from a rear surface of the thin film; calculating an optical path length from the first interference wave to the second interference wave; calculating a film thickness of the thin film; calculating an optical path difference between an optical path length of the substrate and the calculated optical path length; compensating for the optical path length from the first interference wave to the second interference wave; and calculating a temperature of the object at the measurement point.

摘要翻译： 温度测量方法包括：将光传输到待测物体的测量点，所述物体是其上形成有薄膜的基板; 测量由来自基板的表面的反射光引起的第一干涉波，以及由来自基板和薄膜之间的界面和薄膜的后表面的反射光引起的第二干涉波; 计算从第一干涉波到第二干涉波的光路长度; 计算薄膜的膜厚度; 计算基板的光路长度与算出的光程长度之间的光程差; 补偿从第一干涉波到第二干涉波的光路长度; 并计算测量点处的物体的温度。