公开(公告)号：US06664592B2

公开(公告)日：2003-12-16

申请号：US10330280

申请日：2002-12-30

申请人： Seiji Inumiya ,  Tomohiro Saito ,  Atsushi Yagishita ,  Katsuhiko Hieda ,  Toshihiko Iinuma

发明人： Seiji Inumiya ,  Tomohiro Saito ,  Atsushi Yagishita ,  Katsuhiko Hieda ,  Toshihiko Iinuma

IPC分类号： H01L2976

CPC分类号： H01L29/495 ,  H01L21/28114 ,  H01L21/28123 ,  H01L21/76801 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76897 ,  H01L21/823437 ,  H01L29/41783 ,  H01L29/4941 ,  H01L29/6653 ,  H01L29/66537 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/66621 ,  H01L29/78 ,  Y10S257/90

摘要： A semiconductor device includes a semiconductor substrate, a gate insulator film formed on a bottom surface and a side surface of a groove formed in the semiconductor substrate, a gate electrode having a lower portion buried in the groove on whose bottom and side surface the gate insulator film is formed, and an upper portion protruding a surface of said semiconductor substrate, and source region and a drain region formed on a surface of the semiconductor substrate in such a way as to sandwich the gate electrode. A thickness of the upper portion of the gate electrode protruding the surface of the semiconductor substrate is equal to or greater than twice a thickness of the lower portion of the gate electrode buried in the groove.

摘要翻译： 半导体器件包括半导体衬底，形成在半导体衬底的凹槽的底面和凹槽的侧面上的栅极绝缘体膜，栅电极，其下部埋设在沟槽中，栅极绝缘体的底部和侧表面上的栅极绝缘体 并且形成在半导体衬底的表面上的源极区域和漏极区域以夹着栅极电极的方式突出所述半导体衬底的表面的上部。 突出半导体衬底表面的栅电极的上部的厚度等于或大于埋在槽中的栅电极的下部的厚度的两倍。

公开(公告)号：US06611017B2

公开(公告)日：2003-08-26

申请号：US09816163

申请日：2001-03-26

申请人： Katsuhiko Hieda

发明人： Katsuhiko Hieda

IPC分类号： H01L27108

CPC分类号： H01L27/11502 ,  H01L27/10855 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/90 ,  H01L28/91

摘要： A plurality of storage node electrodes are formed on a semiconductor substrate. A capacitor insulating film is formed on the storage node electrodes. A plate electrode, facing the storage node electrodes, is formed on the capacitor insulating film. A cavity is formed in the plate electrode.

摘要翻译： 多个存储节点电极形成在半导体衬底上。 在存储节点电极上形成电容绝缘膜。 在电容器绝缘膜上形成面向存储节点电极的平板电极。 在平板电极中形成空腔。

公开(公告)号：US6072221A

公开(公告)日：2000-06-06

申请号：US105021

申请日：1998-06-26

申请人： Katsuhiko Hieda

发明人： Katsuhiko Hieda

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L21/60 ,  H01L21/768 ,  H01L29/417 ,  H01L29/78 ,  A01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L21/76897 ,  H01L29/41775 ,  H01L29/66545 ,  H01L29/6659

摘要： In the method of manufacturing a semiconductor device, according to the present invention, first, a dummy gate electrode consisting of a semiconductor layer and a non-metal cap layer formed on the semiconductor layer, is formed above a substrate. Then, diffusion layers are formed respectively on both sides of the dummy gate electrode. The dummy gate is used as a mask here, and thus the diffusion layers are self-aligned respectively with both sides of the dummy gate electrode. The formation of these diffusion layers requires a high-temperature heat treatment, however since the cap layer is made of a non-metal material, it is not melted down even in the high-temperature heat treatment. Next, the cap layer formed on the semiconductor layer is removed, and a gate groove made by the removal is filled with metal. Thus, a metal gate electrode made of a semiconductor layer and a metal layer is completed. As described above, in the present invention, first, a dummy gate electrode is formed of a non-metal cap layer, and the cap layer is removed after the formation of the diffusion layers, followed by filling the created gate groove with a metal. In this manner, the self-alignment of the diffusion layers and the metallization of the gate electrode can be achieved at the same time.

摘要翻译： 在本发明的半导体装置的制造方法中，首先，在基板的上方形成由在半导体层上形成的半导体层和非金属盖层构成的虚拟栅电极。 然后，分别在虚拟栅电极的两侧形成扩散层。 虚拟栅极用作掩模，因此扩散层分别与伪栅电极的两侧自对准。 这些扩散层的形成需要高温热处理，但是由于盖层由非金属材料制成，所以即使在高温热处理中也不会熔化。 接下来，去除形成在半导体层上的盖层，并且用金属填充通过去除制成的浇口槽。 因此，完成了由半导体层和金属层制成的金属栅电极。 如上所述，在本发明中，首先，由非金属盖层形成虚设栅电极，在形成扩散层之后除去盖层，然后用金属填充所形成的栅极槽。 以这种方式，可以同时实现扩散层的自对准和栅电极的金属化。

公开(公告)号：US6054355A

公开(公告)日：2000-04-25

申请号：US105956

申请日：1998-06-29

申请人： Seiji Inumiya ,  Tomohiro Saito ,  Atsushi Yagishita ,  Katsuhiko Hieda ,  Toshihiko Iinuma

发明人： Seiji Inumiya ,  Tomohiro Saito ,  Atsushi Yagishita ,  Katsuhiko Hieda ,  Toshihiko Iinuma

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L21/60 ,  H01L21/768 ,  H01L21/8234 ,  H01L29/423 ,  H01L29/49

CPC分类号： H01L29/495 ,  H01L21/28114 ,  H01L21/28123 ,  H01L21/76801 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76897 ,  H01L21/823437 ,  H01L29/41783 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/66621 ,  H01L29/78 ,  H01L29/4941 ,  H01L29/66537 ,  Y10S257/90

摘要： A method of manufacturing a semiconductor device comprises the steps of forming a first film and a second film on a semiconductor substrate, selectively removing the second film, the first film and a top portion of the semiconductor substrate to form a first groove, burying a first insulator film in the first groove to form an isolation region, patterning the second film surrounded by the isolation region to form a dummy gate layer, doping the semiconductor substrate with an impurity using the dummy gate layer as a mask, forming a second insulator film on the semiconductor substrate surrounded by the dummy gate layer and the first insulator film, removing the dummy gate layer and the first film to form a second groove, forming a gate insulator film on the semiconductor substrate in the second groove, and forming a gate electrode on the gate insulator film in the second groove.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在半导体衬底上形成第一膜和第二膜，选择性地去除第二膜，第一膜和半导体衬底的顶部以形成第一槽， 在第一沟槽中形成绝缘体膜以形成隔离区域，对由隔离区域包围的第二膜进行构图以形成伪栅极层，使用伪栅极层作为掩模将杂质掺杂到半导体衬底上，形成第二绝缘膜 所述半导体基板被所述伪栅极层和所述第一绝缘膜包围，去除所述伪栅极层和所述第一膜以形成第二沟槽，在所述第二沟槽中的所述半导体基板上形成栅极绝缘膜，并且形成栅电极 第二槽中的栅极绝缘膜。

公开(公告)号：US5061649A

公开(公告)日：1991-10-29

申请号：US29954

申请日：1987-03-25

申请人： Naoko Takenouchi ,  Katsuhiko Hieda

发明人： Naoko Takenouchi ,  Katsuhiko Hieda

IPC分类号： H01L21/8234 ,  H01L21/336 ,  H01L27/088 ,  H01L29/78

CPC分类号： H01L29/6659 ,  H01L29/78

摘要： A semiconductor integrated circuit device is disclosed which has an MOSFET with a lightly doped drain or LLD structure. A gate electrode layer is insulatively provided above a semiconductor substrate of p conductivity type. Source and drain layers of n conductivity type are formed in the substrate in such a manner as to be substantially self-aligned with the gate electrode. Each of these source and drain layers is comprised of a heavily doped diffusion layer and a lightly doped diffusion layer. The n- diffusion layer is deep enough to fully surround the heavily doped layer in the substrate. The n- diffusion layer has a step-like cross-section, whereby the effective channel length of MOSFET is increased inside the substrate to increase the punch-through voltage level.

摘要翻译： 公开了一种具有轻掺杂漏极或LLD结构的MOSFET的半导体集成电路器件。 在p型导电型的半导体衬底之上绝缘地设置栅电极层。 n导电型的源极和漏极层以与栅电极基本上自对准的方式形成在衬底中。 这些源极和漏极层中的每一个由重掺杂扩散层和轻掺杂扩散层组成。 n-扩散层足够深以完全围绕衬底中的重掺杂层。 n-扩散层具有阶梯状横截面，由此在衬底内增加MOSFET的有效沟道长度以增加穿通电压电平。

公开(公告)号：US08119196B2

公开(公告)日：2012-02-21

申请号：US12659071

申请日：2010-02-24

申请人： Osamu Arisumi ,  Masahiro Kiyotoshi ,  Katsuhiko Hieda

发明人： Osamu Arisumi ,  Masahiro Kiyotoshi ,  Katsuhiko Hieda

IPC分类号： B05D3/12

CPC分类号： B05B9/04 ,  B05B9/047 ,  B05C11/08 ,  B05C11/10

摘要： A semiconductor manufacturing apparatus comprises a discharge portion discharging a coating liquid onto a substrate; a gas supply tube supplying an inert gas into a liquid container that contains the coating liquid, and pressurizing an interior of the liquid container; a coating liquid supply tube airtightly supplying the coating liquid from the liquid container to the discharge portion using pressurization from the gas supply tube; a first connecting portion capable of attaching and detaching the liquid container to and from the coating liquid supply tube; a second connecting portion capable of attaching and detaching the liquid container to and from the gas supply tube; and a solvent supply tube supplying a solvent, which can dissolve the coating liquid, to the first connecting portion.

摘要翻译： 半导体制造装置包括将涂布液排出到基板上的排出部; 气体供给管，将惰性气体供给到容纳所述涂布液的液体容器内，对所述液体容器的内部进行加压; 涂料液体供给管通过来自气体供给管的加压将涂布液从液体容器密封地供给到排出部; 第一连接部分，其能够将液体容器附接到涂布液供应管和从涂布液供应管分离; 第二连接部分，其能够将液体容器附接到气体供应管和从气体供应管排出; 以及将能够溶解涂布液的溶剂供给到第一连接部的溶剂供给管。

公开(公告)号：US20110123936A1

公开(公告)日：2011-05-26

申请号：US13022560

申请日：2011-02-07

申请人： Masafumi HORI ,  Michihiro Mita ,  Kouichi Fujiwara ,  Katsuhiko Hieda ,  Yoshikazu Yamaguchi ,  Tomohiro Kakizawa

发明人： Masafumi HORI ,  Michihiro Mita ,  Kouichi Fujiwara ,  Katsuhiko Hieda ,  Yoshikazu Yamaguchi ,  Tomohiro Kakizawa

IPC分类号： G03F7/20 ,  C08L61/28 ,  C08L33/26 ,  C08L41/00

CPC分类号： H01L21/0273 ,  G03F7/0035 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/2041

摘要： A resist pattern coating agent includes a hydroxyl group-containing resin, a solvent, and at least two compounds including at least two groups shown by a following formula (1), compounds including a group shown by a following formula (2), and compounds including a group shown by a following formula (4).

摘要翻译： 抗蚀剂图案涂布剂包括含羟基的树脂，溶剂和至少两种包含由下式（1）表示的至少两个基团的化合物，包括由下式（2）表示的基团的化合物和化合物 包括由下式（4）表示的组。

公开(公告)号：US20100159710A1

公开(公告)日：2010-06-24

申请号：US12659071

申请日：2010-02-24

申请人： Osamu Arisumi ,  Masahiro Kiyotoshi ,  Katsuhiko Hieda

发明人： Osamu Arisumi ,  Masahiro Kiyotoshi ,  Katsuhiko Hieda

IPC分类号： H01L21/469

CPC分类号： B05B9/04 ,  B05B9/047 ,  B05C11/08 ,  B05C11/10

摘要： A semiconductor manufacturing apparatus comprises a discharge portion discharging a coating liquid onto a substrate; a gas supply tube supplying an inert gas into a liquid container that contains the coating liquid, and pressurizing an interior of the liquid container; a coating liquid supply tube airtightly supplying the coating liquid from the liquid container to the discharge portion using pressurization from the gas supply tube; a first connecting portion capable of attaching and detaching the liquid container to and from the coating liquid supply tube; a second connecting portion capable of attaching and detaching the liquid container to and from the gas supply tube; and a solvent supply tube supplying a solvent, which can dissolve the coating liquid, to the first connecting portion.

摘要翻译： 半导体制造装置包括将涂布液排出到基板上的排出部; 气体供给管，将惰性气体供给到容纳所述涂布液的液体容器内，对所述液体容器的内部进行加压; 涂料液体供给管通过来自气体供给管的加压将涂布液从液体容器密封地供给到排出部; 第一连接部分，其能够将液体容器附接到涂布液供应管和从涂布液供应管分离; 第二连接部分，其能够将液体容器附接到气体供应管和从气体供应管排出; 以及将能够溶解涂布液的溶剂供给到第一连接部的溶剂供给管。

公开(公告)号：US20100055869A1

公开(公告)日：2010-03-04

申请号：US12588087

申请日：2009-10-02

申请人： Osamu Arisumi ,  Masahiro Kiyotoshi ,  Katsuhiko Hieda ,  Yoshitaka Tsunashima

发明人： Osamu Arisumi ,  Masahiro Kiyotoshi ,  Katsuhiko Hieda ,  Yoshitaka Tsunashima

IPC分类号： H01L21/762

CPC分类号： H01L27/11521 ,  H01L27/11524

摘要： A method of manufacturing a semiconductor device comprises forming a trench in a semiconductor substrate, forming a first insulating film having a first recessed portion in the trench, forming a coating film so as to fill the first recessed portion therewith, transforming the coating film into a second insulating film, planarizing the second insulating film to expose the first insulating film and the second insulating film, removing at least the second insulating film from the first recessed portion to moderate an aspect ratio for the first recessed portion formed in the trench, thereby forming a second recessed portion therein, and forming a third insulating film on a surface of the semiconductor substrate so as to fill the second recessed portion therewith.

摘要翻译： 一种制造半导体器件的方法包括在半导体衬底中形成沟槽，在沟槽中形成具有第一凹陷部分的第一绝缘膜，形成涂膜以便将其涂覆在第一凹部中，将涂膜转变为 第二绝缘膜，平坦化第二绝缘膜以暴露第一绝缘膜和第二绝缘膜，至少从第一凹部去除第二绝缘膜，以调节形成在沟槽中的第一凹部的纵横比，由此形成 在其中形成第二凹部，在半导体衬底的表面上形成第三绝缘膜，以便填充第二凹部。

公开(公告)号：US20080129970A1

公开(公告)日：2008-06-05

申请号：US11795809

申请日：2006-01-20

申请人： Taiichi Furukawa ,  Katsuhiko Hieda ,  Yakashi Miyamatsu ,  Yong Wang ,  Kinji Yamada

发明人： Taiichi Furukawa ,  Katsuhiko Hieda ,  Yakashi Miyamatsu ,  Yong Wang ,  Kinji Yamada

IPC分类号： G03B27/42 ,  H01L21/027 ,  G03F7/038 ,  G03B27/52 ,  G03F7/20

CPC分类号： G03F7/70341

摘要： An immersion exposure system 1 performs an exposure process through a liquid 301 provided between an optical element of a projection optical means 121 and a substrate 111. The immersion exposure system 1 includes a liquid supply section 80 which supplies the liquid 301, an exposure section to which the liquid 301 (301b) supplied from the liquid supply section 80 is continuously introduced along a specific direction and which performs an exposure process in a state in which a space between the optical element of the projection optical means 121 and the substrate 111 is filled with the liquid 301, a liquid recovery section 90 which recovers the liquid 301 (301a) passed through the exposure section 110 at a symmetrical position against the substrate 111, and a liquid recycling section 20 which recycles the liquid 301 (301c) recovered by the liquid recovery section 90. The properties of the immersion exposure liquid can be stabilized when applying an immersion method, whereby exposure can be advantageously and continuously performed, and running cost can be reduced.

摘要翻译： 浸没曝光系统1通过设置在投影光学装置121的光学元件和基板111之间的液体301进行曝光处理。 浸没曝光系统1包括供给液体301的液体供给部80，从液体供给部80供给的液体301（301b）沿特定方向连续导入的曝光部，并进行曝光处理 投影光学装置121的光学元件和基板111之间的空间被液体301填充的状态，使液体301（301a）以对称的方式通过曝光部110的液体回收部90 与液体回收部90回收的液体301（301c）的液体再循环部20。 浸渍曝光液体的性质可以通过浸渍法稳定化，可以有利且连续地进行曝光，能够降低运转成本。