公开(公告)号：US06818457B2

公开(公告)日：2004-11-16

申请号：US10153776

申请日：2002-05-24

申请人： Masayuki Suzuki

发明人： Masayuki Suzuki

IPC分类号： H01L2100

CPC分类号： H01L21/02183 ,  H01L21/0223 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/02356 ,  H01L21/31604 ,  H01L27/10814 ,  H01L28/40

摘要： After formation of a lower electrode, made of an Ru film, over the side walls and bottom portion of a hole in a silicon oxide film, wherein an information storage capacitive element is to be formed, a tantalum oxide film, which is to serves as a capacitive insulating film, is deposited by CVD over the lower electrode. In order to improve the quality of this tantalum oxide film, heat treatment of it is conducted in a mixed gas atmosphere of H2O (water vapor) and H2 (hydrogen), while controlling a partial pressure ratio of H2O to H2 so as to fall within a region bounded by the curves (a) and (c) of FIG. 15. This heat treatment makes it possible to improve the quality of the tantalum oxide film, while preventing oxidation of the Ru film constituting the lower electrode.

摘要翻译： 在形成要形成信息存储电容元件的氧化硅膜中形成由Ru膜制成的下电极，在氧化硅膜上的孔的侧壁和底部之上，形成氧化钽膜，其用作 电容绝缘膜通过CVD沉积在下电极上。 为了提高该钽氧化物膜的质量，在H 2 O（水蒸气）和H 2（氢）的混合气体气氛中进行热处理，同时控制H 2 O与H 2的分压比，使其落入 由图1的曲线（a）和（c）限定的区域。 该热处理使得可以提高氧化钽膜的质量，同时防止构成下电极的Ru膜的氧化。

公开(公告)号：US06723583B2

公开(公告)日：2004-04-20

申请号：US10453606

申请日：2003-06-04

申请人： Noriyuki Takahashi ,  Masayuki Suzuki ,  Kouji Tsuchiya ,  Takao Matsuura ,  Takanori Hashizume ,  Masahiro Ichitani ,  Kazunari Suzuki ,  Takafumi Nishita ,  Kenichi Imura ,  Takashi Miwa

发明人： Noriyuki Takahashi ,  Masayuki Suzuki ,  Kouji Tsuchiya ,  Takao Matsuura ,  Takanori Hashizume ,  Masahiro Ichitani ,  Kazunari Suzuki ,  Takafumi Nishita ,  Kenichi Imura ,  Takashi Miwa

IPC分类号： H01L2144

CPC分类号： H01L23/564 ,  H01L21/561 ,  H01L21/565 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49838 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L2223/5442 ,  H01L2223/54473 ,  H01L2224/16 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/73265 ,  H01L2224/92 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/07802 ,  H01L2924/0781 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15151 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/20752 ,  H01L2924/30105 ,  H01L2924/351 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2924/00014 ,  H01L2224/92247 ,  H01L2924/00 ,  H01L2924/00012

摘要： The back side of a strip substrate with plural semiconductor chips mounted thereon is vacuum-chucked to a lower mold half of a mold, and in this state the plural semiconductor chips are sealed with resin simultaneously to form a seal member. Thereafter, the strip substrate and the seal member are released from the mold and are cut into plural semiconductor devices. The semiconductor devices thus obtained are improved in their mounting reliability.

摘要翻译： 将其上安装有多个半导体芯片的带状基板的背面真空吸附到模具的下半模，并且在该状态下，多个半导体芯片同时用树脂密封以形成密封构件。 此后，带状基板和密封构件从模具中释放并切割成多个半导体器件。 由此获得的半导体器件的安装可靠性得到改善。

公开(公告)号：US06707532B2

公开(公告)日：2004-03-16

申请号：US09790865

申请日：2001-02-23

申请人： Masayuki Suzuki

发明人： Masayuki Suzuki

IPC分类号： G03B2768

CPC分类号： G02B17/0892 ,  G02B17/008 ,  G02B17/08 ,  G02B17/0812 ,  G02B27/0025 ,  G03F7/70225 ,  G03F7/70258 ,  G03F7/70308

摘要： An exposure apparatus includes a projection optical system of a catadioptric type and an optical element disposed on a reciprocating light path of the projection optical system. The optical element is movable along an optical axis direction.

摘要翻译： 曝光装置包括反射折射型的投影光学系统和设置在投影光学系统的往复光路上的光学元件。 光学元件可沿光轴方向移动。

公开(公告)号：US06666560B2

公开(公告)日：2003-12-23

申请号：US10136722

申请日：2002-04-30

申请人： Masayuki Suzuki

发明人： Masayuki Suzuki

IPC分类号： G02B510

CPC分类号： G03F7/70233 ,  G02B17/0657

摘要： A reflection type magnification projection optical system includes five light-reflecting mirrors arranged from an object side to an image side in a sequence of a concave mirror (M1), a convex mirror (M2), a concave mirror (M3), a convex mirror (M4), and a concave mirror (M5) such that those mirrors basically form a coaxial system, and forming no intermediate image, and wherein an object point and an image point are respectively on opposite sides across an optical axis, and the object point and the image point are kept 400˜1500 mm apart with respect to a direction orthogonal to the optical axis.

摘要翻译： 反射型放大投影光学系统包括从凹面镜（M1），凸面镜（M2），凹面镜（M3），凸面镜（M3），凸面镜 （M4）和凹面镜（M5），使得这些反射镜基本上形成同轴系统，并且不形成中间图像，并且其中物点和像点分别在光轴的相对侧上，并且物点 并且相对于与光轴正交的方向，图像点保持400〜1500mm。

公开(公告)号：US06511778B2

公开(公告)日：2003-01-28

申请号：US09753517

申请日：2001-01-04

申请人： Satoshi Okazaki ,  Ichiro Kaneko ,  Jiro Moriya ,  Masayuki Suzuki ,  Tamotsu Maruyama

发明人： Satoshi Okazaki ,  Ichiro Kaneko ,  Jiro Moriya ,  Masayuki Suzuki ,  Tamotsu Maruyama

IPC分类号： G03F900

CPC分类号： G03F1/32 ,  G03F1/26

摘要： A phase shift mask blank comprising a transparent substrate and at least one layer of a phase shifter thereon, wherein the phase shifter is a film composed primarily of a fluorine-doped metal silicide, can be fabricated into a high-performance phase shift mask having adequate transmittance and good stability over time even when used with light sources that emit short-wavelength light. The phase shift mask can be used to fabricate semiconductor integrated circuits to a smaller minimum feature size and a higher level of integration.

摘要翻译： 一种相移掩模坯料，其包括透明基板和至少一层其上的移相器，其中移相器是主要由掺氟金属硅化物构成的膜，可以被制成具有足够的高性能相移掩模 即使在与发出短波长光的光源一起使用时，透射率和稳定性也很好。 相移掩模可用于将半导体集成电路制造成更小的最小特征尺寸和更高的集成度。

公开(公告)号：US06493179B2

公开(公告)日：2002-12-10

申请号：US09964738

申请日：2001-09-28

申请人： Hidekazu Kohira ,  Hiromitsu Tokisue ,  Masaaki Matsumoto ,  Masayuki Suzuki ,  Yoshinori Takeuchi ,  Toshihiko Shimizu

发明人： Hidekazu Kohira ,  Hiromitsu Tokisue ,  Masaaki Matsumoto ,  Masayuki Suzuki ,  Yoshinori Takeuchi ,  Toshihiko Shimizu

IPC分类号： G11B1700

CPC分类号： G11B5/4833

摘要： A magnetic disk unit includes a magnetic disk, a slider having a magnetic head, a suspension for providing the slider, and an actuator arm for positioning the slider on the magnetic disk a first pad including the magnetic head and second pads including no magnetic heads are disposed on an air bearing surface of the slider. A load point of the suspension with respect to the slider is positioned between a leading edge of the slider and a position located at a distance equivalent to substantially 0.42 times a whole length of the slider from the leading edge of the slider. When the slider is seek-positioned on a certain track on the magnetic disk, a frictional force exerted between the first pad of the slider and the magnetic disk is smaller than a product of lateral stiffness of the suspension in a seeking direction and a track width.

摘要翻译： 磁盘单元包括磁盘，具有磁头的滑块，用于提供滑块的悬架，以及用于将滑块定位在磁盘上的驱动臂，包括磁头的第一焊盘和不包括磁头的第二焊盘， 设置在滑块的空气支承表面上。 悬架相对于滑动件的载荷点位于滑动件的前缘之间，并且位于距离滑块的前缘相当于滑块整个长度的大约0.42倍的距离的位置。 当滑块被寻找定位在磁盘上的某个轨道上时，在滑块的第一垫和磁盘之间施加的摩擦力小于在寻道方向上的悬架的横向刚度和轨道宽度 。

公开(公告)号：US06467148B1

公开(公告)日：2002-10-22

申请号：US09208496

申请日：1998-12-10

申请人： Masayuki Suzuki ,  Akira Maruyama

发明人： Masayuki Suzuki ,  Akira Maruyama

IPC分类号： B23Q300

CPC分类号： F16G5/16 ,  Y10T29/49895 ,  Y10T29/53957

摘要： A producing method of a metal band of a metal belt for a belt-type continuously variable transmission includes the following steps of: superposing a predetermined number of blank rings concentrically on one another to constitute a laminated blank rings; fitting the laminated blank rings to an outer periphery of a circle jig made of material having higher thermal expansivity than that of the blank ring; heating the laminated blank rings together with the circle jig; and deforming the laminated blank rings plastically by thermal expansion of the circle jig.

摘要翻译： 用于带式无级变速器的金属带的金属带的制造方法包括以下步骤：将预定数量的坯环彼此同心地叠置以构成层压坯环; 将层压的坯环装配到由具有比空白环的热膨胀性高的材料制成的圆形夹具的外周; 加热层叠的空白环与圆形夹具一起; 并通过圆形夹具的热膨胀塑造层压的坯环。

公开(公告)号：US06400489B1

公开(公告)日：2002-06-04

申请号：US09610583

申请日：2000-07-05

申请人： Masayuki Suzuki ,  Yuichi Ishida ,  Naomi Nagasawa ,  Takaaki Ami ,  Teiichiro Nishimura

发明人： Masayuki Suzuki ,  Yuichi Ishida ,  Naomi Nagasawa ,  Takaaki Ami ,  Teiichiro Nishimura

IPC分类号： B02F100

CPC分类号： G02F1/21 ,  G02F1/0126 ,  G02F1/133362 ,  G02F1/216

摘要： A solid-state displacement element includes an inorganic layered compound having a layered structure and an organic substance inserted between layers of the inorganic layered compound. The solid-state displacement element expands or contracts in the lamination direction of the inorganic layered compound when irradiated with controlling light. An optical element and an interference filter using the same principle of expansion or contraction as that in the solid-state displacement element are also disclosed.

摘要翻译： 固态置换元件包括具有层状结构的无机层状化合物和插入无机层状化合物的层之间的有机物质。 当用控制光照射时，固态位移元件在无机层状化合物的层叠方向上膨胀或收缩。 还公开了使用与固态位移元件相同的膨胀或收缩原理的光学元件和干涉滤光器。

公开(公告)号：US06229159B1

公开(公告)日：2001-05-08

申请号：US09386731

申请日：1999-08-31

申请人： Masayuki Suzuki

发明人： Masayuki Suzuki

IPC分类号： H01L2715

CPC分类号： H01L31/125 ,  H01L31/162 ,  H01S5/021 ,  H01S5/026 ,  Y10T428/24926

摘要： An optical integrated oxide device uses a silicon-based functional matrix substrate on which both an oxide device and a semiconductor light emitting device can be commonly integrated with an optimum structure and a high density. A single-crystal Si substrate has formed on its surface a first region where a cleaned surface of the single-crystal Si substrate itself appears, and a second region in which a CeO2 thin film is preferentially (100)-oriented or epitaxially grown on the single-crystal Si substrate. A semiconductor laser is integrated in the first region by epitaxial growth or atomic layer bonding, and an optical modulation device or optical detection device made of oxides are formed in the second region, to make up an optical integrated oxide device. A MgAl2O4 thin film may be used instead of CeO2 thin film.

公开(公告)号：US06171871B2

公开(公告)日：2001-01-09

申请号：US09078678

申请日：1998-05-14

申请人： Akio Machida ,  Naomi Nagasawa ,  Takaaki Ami ,  Masayuki Suzuki

发明人： Akio Machida ,  Naomi Nagasawa ,  Takaaki Ami ,  Masayuki Suzuki

IPC分类号： H01L2100

CPC分类号： H01L27/11502 ,  H01L21/31691 ,  H01L27/11507

摘要： It is intended to provide a ferroelectric that exhibits superior ferroelectricity. A ferroelectric provided is an oxide having a layered crystal structure that is composed of Bi, a first element Me, a second element R, and O. The first element Me is at least one element selected from the group consisting of Na, K, Ca, Ba, Sr, Pb, and Bi. The second element R is at least one element selected from the group consisting of Fe, Ti, Nb, Ta, and W. Ninety-eight percent or more of the entire body of the ferroelectric exhibits ferroelectricity. After an oxide having a layered crystal structure has been grown by a vapor-phase method (crystal growth step), electrodes are attached to the oxide having a layered crystal structure and a voltage is applied thereto (voltage application step). As a result, strains of crystal lattices are corrected at least partially, whereby portions that did not exhibit ferroelectricity at all or did not exhibit superior ferroelectricity due to such large strains that the symmetry of crystal lattices is lost are changed so as to exhibit superior ferroelectricity.

摘要翻译： 旨在提供具有优异的铁电性的铁电体。 提供的铁电体是具有由Bi，第一元素Me，第二元素R和O组成的层状晶体结构的氧化物。第一元素Me是选自Na，K，Ca ，Ba，Sr，Pb和Bi。 第二元素R是选自Fe，Ti，Nb，Ta和W中的至少一种元素。铁电体全体的98％以上表现出铁电性。 在通过气相法（晶体生长步骤）生长具有层状晶体结构的氧化物之后，将电极附着到具有层状晶体结构的氧化物并施加电压（电压施加步骤）。 结果，至少部分地校正晶格的应变，由于由于失去晶格的对称性的这种大的应变，完全不显示铁电性的部分或者没有表现出优异的铁电性，从而表现出优异的铁电性 。