公开(公告)号：US20190355711A1

公开(公告)日：2019-11-21

申请号：US16398433

申请日：2019-04-30

Applicant: Micron Technology, Inc.

Inventor： Daniel Billingsley ,  Everett A. McTeer ,  Christopher W. Petz ,  Haoyu Li ,  John Mark Meldrim ,  Yongjun Jeff Hu

IPC: H01L27/02 ,  G11C11/34 ,  H01L21/82 ,  H01L23/532 ,  H01L27/12 ,  G11C5/06

Abstract: An integrated assembly includes an insulative mass with a first region adjacent to a second region. The first region has a greater amount of one or more inert interstitial elements incorporated therein than does the second region. Some embodiments include an integrated assembly which has vertically-extending channel material pillars, and which has memory cells along the channel material pillars. A conductive structure is under the channel material pillars. The conductive structure includes doped semiconductor material in direct contact with bottom regions of the channel material pillars. An insulative mass is along the bottom regions of the channel material pillars. The insulative mass has an upper region over a lower region. The lower region has a greater amount of one or more inert interstitial elements incorporated therein than does the upper region. Some embodiments include methods of forming integrated assemblies.

公开(公告)号：US10446751B2

公开(公告)日：2019-10-15

申请号：US15873584

申请日：2018-01-17

Applicant: Micron Technology, Inc.

Inventor： Christopher W. Petz ,  Yongjun Jeff Hu ,  Scott E. Sills ,  D. V. Nirmal Ramaswamy

IPC: H01L45/00 ,  H01L27/24 ,  H01L23/522 ,  H01L27/22 ,  C23C14/06 ,  C23C14/08 ,  C23C14/18 ,  C23C14/34 ,  C23C16/34 ,  C23C16/36 ,  C23C16/40 ,  C23C16/455 ,  G11C13/00

Abstract: A resistive memory element comprises a first electrode, an active material over the first electrode, a buffer material over the active material and comprising longitudinally extending, columnar grains of crystalline material, an ion reservoir material over the buffer material, and a second electrode over the ion reservoir material. A memory cell, a memory device, an electronic system, and a method of forming a resistive memory element are also described.

公开(公告)号：US20190304996A1

公开(公告)日：2019-10-03

申请号：US16431527

申请日：2019-06-04

Applicant: Micron Technology, Inc.

Inventor： David Ross Economy ,  John Mark Meldrim ,  Haoyu Li ,  Yongjun Jeff Hu ,  Christopher W. Petz ,  Daniel Billingsley ,  Everett A. McTeer

IPC: H01L27/11582 ,  H01L21/768 ,  H01L27/11565 ,  H01L27/11556 ,  H01L27/11519 ,  H01L21/311

Abstract: Some embodiments include an assembly which has channel material pillars, and which has memory cells along the channel material pillars. A conductive structure is under the channel material pillars. The conductive structure has doped semiconductor material in direct contact with bottom regions of the channel material pillars. One or more of magnesium, scandium, yttrium and lanthanide elements is along the bottom regions of the channel material pillars. Some embodiments include methods of forming assemblies. A structure is formed, and a mass is formed against an upper surface of the structure. Plugs are formed within openings in the mass. The plugs comprise a second material over a first material. The first material includes one or more of magnesium, scandium, yttrium and lanthanide elements. Openings are formed to terminate on the first material, and are then extended through the first material. Channel material pillars are formed within the openings.

公开(公告)号：US20190198519A1

公开(公告)日：2019-06-27

申请号：US15852989

申请日：2017-12-22

Applicant: Micron Technology, Inc.

Inventor： David Ross Economy ,  John Mark Meldrim ,  Haoyu Li ,  Yongjun Jeff Hu ,  Christopher W. Petz ,  Daniel Billingsley ,  Everett A. McTeer

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L21/768 ,  H01L21/311 ,  H01L27/11565 ,  H01L27/11519

CPC classification number: H01L27/11582 ,  H01L21/31144 ,  H01L21/76831 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11565

Abstract: Some embodiments include an assembly which has channel material pillars, and which has memory cells along the channel material pillars. A conductive structure is under the channel material pillars. The conductive structure has doped semiconductor material in direct contact with bottom regions of the channel material pillars. One or more of magnesium, scandium, yttrium and lanthanide elements is along the bottom regions of the channel material pillars. Some embodiments include methods of forming assemblies. A structure is formed, and a mass is formed against an upper surface of the structure. Plugs are formed within openings in the mass. The plugs comprise a second material over a first material. The first material includes one or more of magnesium, scandium, yttrium and lanthanide elements. Openings are formed to terminate on the first material, and are then extended through the first material. Channel material pillars are formed within the openings.

公开(公告)号：US20180145254A1

公开(公告)日：2018-05-24

申请号：US15873584

申请日：2018-01-17

Applicant: Micron Technology, Inc.

Inventor： Christopher W. Petz ,  Yongjun Jeff Hu ,  Scott E. Sills ,  Durai Vishak Nirmal Ramaswamy

IPC: H01L45/00 ,  C23C14/06 ,  C23C16/455 ,  C23C16/40 ,  C23C16/36 ,  C23C16/34 ,  C23C14/34 ,  C23C14/18 ,  C23C14/08

CPC classification number: H01L45/1616 ,  C23C14/0641 ,  C23C14/0664 ,  C23C14/08 ,  C23C14/18 ,  C23C14/34 ,  C23C16/34 ,  C23C16/36 ,  C23C16/40 ,  C23C16/45525 ,  G11C13/0011 ,  G11C2213/51 ,  H01L23/5228 ,  H01L27/222 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/06 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/141 ,  H01L45/144 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1625 ,  H01L2924/1441

Abstract: A resistive memory element comprises a first electrode, an active material over the first electrode, a buffer material over the active material and comprising longitudinally extending, columnar grains of crystalline material, an ion reservoir material over the buffer material, and a second electrode over the ion reservoir material. A memory cell, a memory device, an electronic system, and a method of forming a resistive memory element are also described.

公开(公告)号：US09893282B2

公开(公告)日：2018-02-13

申请号：US15369427

申请日：2016-12-05

Applicant: Micron Technology, Inc.

Inventor： Christopher W. Petz ,  Yongjun Jeff Hu ,  Scott E. Sills ,  D. V. Nirmal Ramaswamy

IPC: H01L45/00 ,  C23C14/06 ,  C23C14/34 ,  C23C14/18 ,  C23C14/08 ,  C23C16/455 ,  C23C16/34 ,  C23C16/36 ,  C23C16/40

CPC classification number: H01L45/1616 ,  C23C14/0641 ,  C23C14/0664 ,  C23C14/08 ,  C23C14/18 ,  C23C14/34 ,  C23C16/34 ,  C23C16/36 ,  C23C16/40 ,  C23C16/45525 ,  G11C13/0011 ,  G11C2213/51 ,  H01L45/04 ,  H01L45/06 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/141 ,  H01L45/144 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1625

Abstract: A resistive memory element comprises a first electrode, an active material over the first electrode, a buffer material over the active material and comprising longitudinally extending, columnar grains of crystalline material, an ion reservoir material over the buffer material, and a second electrode over the ion reservoir material. A memory cell, a memory device, an electronic system, and a method of forming a resistive memory element are also described.

公开(公告)号：US20170133587A1

公开(公告)日：2017-05-11

申请号：US15369427

申请日：2016-12-05

Applicant: Micron Technology, Inc.

Inventor： Christopher W. Petz ,  Yongjun Jeff Hu ,  Scott E. Sills ,  D.V. Nirmal Ramaswamy

IPC: H01L45/00 ,  C23C14/34 ,  C23C14/18 ,  C23C16/40 ,  C23C16/455 ,  C23C16/34 ,  C23C16/36 ,  C23C14/06 ,  C23C14/08

CPC classification number: H01L45/1616 ,  C23C14/0641 ,  C23C14/0664 ,  C23C14/08 ,  C23C14/18 ,  C23C14/34 ,  C23C16/34 ,  C23C16/36 ,  C23C16/40 ,  C23C16/45525 ,  G11C13/0011 ,  G11C2213/51 ,  H01L45/04 ,  H01L45/06 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/141 ,  H01L45/144 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1625

Abstract: A resistive memory element comprises a first electrode, an active material over the first electrode, a buffer material over the active material and comprising longitudinally extending, columnar grains of crystalline material, an ion reservoir material over the buffer material, and a second electrode over the ion reservoir material. A memory cell, a memory device, an electronic system, and a method of forming a resistive memory element are also described.

公开(公告)号：US09553263B1

公开(公告)日：2017-01-24

申请号：US14935196

申请日：2015-11-06

Applicant: Micron Technology, Inc.

Inventor： Christopher W. Petz ,  Yongjun Jeff Hu ,  Scott E. Sills ,  D. V. Nirmal Ramaswamy

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/1616 ,  C23C14/0641 ,  C23C14/0664 ,  C23C14/08 ,  C23C14/18 ,  C23C14/34 ,  C23C16/34 ,  C23C16/36 ,  C23C16/40 ,  C23C16/45525 ,  G11C13/0011 ,  G11C2213/51 ,  H01L45/04 ,  H01L45/06 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/141 ,  H01L45/144 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1625

Abstract: A resistive memory element comprises a first electrode, an active material over the first electrode, a buffer material over the active material and comprising longitudinally extending, columnar grains of crystalline material, an ion reservoir material over the buffer material, and a second electrode over the ion reservoir material. A memory cell, a memory device, an electronic system, and a method of forming a resistive memory element are also described.

Abstract translation: 电阻式存储器元件包括第一电极，在第一电极上方的活性材料，在活性材料上方的缓冲材料，并且包括纵向延伸的结晶材料的柱状晶粒，缓冲材料上方的离子储存器材料， 离子储层材料。 还描述了存储器单元，存储器件，电子系统和形成电阻式存储元件的方法。

公开(公告)号：US09444042B2

公开(公告)日：2016-09-13

申请号：US14956291

申请日：2015-12-01

Applicant: Micron Technology, Inc.

Inventor： Christopher W. Petz ,  Dale W. Collins ,  Scott E. Sills ,  Shuichiro Yasuda

IPC: H01L45/00

CPC classification number: H01L45/1246 ,  H01L45/085 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/141 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1608

Abstract: Some embodiments include a memory cell that has an electrode, a switching material over the electrode, a buffer region over the switching material, and an ion reservoir material over the buffer region. The buffer region includes one or more elements from Group 14 of the periodic table in combination with one or more chalcogen elements. Some embodiments include methods of forming memory cells.

公开(公告)号：US20160093803A1

公开(公告)日：2016-03-31

申请号：US14956291

申请日：2015-12-01

Applicant: Micron Technology, Inc.

Inventor： Christopher W. Petz ,  Dale W. Collins ,  Scott E. Sills ,  Shuichiro Yasuda

IPC: H01L45/00

CPC classification number: H01L45/1246 ,  H01L45/085 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/141 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1608

Abstract: Some embodiments include a memory cell that has an electrode, a switching material over the electrode, a buffer region over the switching material, and an ion reservoir material over the buffer region. The buffer region includes one or more elements from Group 14 of the periodic table in combination with one or more chalcogen elements. Some embodiments include methods of forming memory cells.