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公开(公告)号：US06448645B1
公开(公告)日：2002-09-10
申请号：US09489475
申请日：2000-01-21
IPC分类号： H01L2348
CPC分类号： H01L25/072 , H01L2224/32225 , H01L2224/33181 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/00
摘要： A semiconductor device which improves heat radiation performance and realizes size reduction and enables heat to be radiated swiftly from both of the principal surfaces of a semiconductor chip even when the semiconductor chip has a construction vulnerable to stresses. It comprises several IGBT chips each having a collector electrode on one principal surface and an emitter electrode and a gate electrode on the other principal surface and two high thermal conductivity insulating substrates sandwiching these IGBT chips and having electrode patterns for bonding to the electrodes of the IGBT chips disposed on their sandwiching surfaces, the electrodes of the IGBT chips and the electrode patterns of the high thermal conductivity insulating substrates being bonded by brazing.
摘要翻译： 即使当半导体芯片具有易受应力的结构时，也能够提高散热性能，实现尺寸的降低，能够迅速地从半导体芯片的两个主面散热。 它包括几个IGBT芯片，每个IGBT芯片在一个主表面上具有集电极电极，在另一个主表面上具有发射极电极和栅极电极，并且两个高导热绝缘基板夹在这些IGBT芯片上，并具有用于接合到IGBT的电极的电极图案 设置在其夹层表面上的芯片，IGBT芯片的电极和高导热绝缘基板的电极图案通过钎焊粘结。
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公开(公告)号：US6015737A
公开(公告)日：2000-01-18
申请号：US515176
申请日：1995-08-15
IPC分类号： H01L21/336 , H01L29/04 , H01L29/06 , H01L29/423 , H01L29/78
CPC分类号： H01L29/045 , H01L29/0696 , H01L29/7813 , H01L29/4236
摘要： A vertical type power MOSFET remarkably reduces its ON-resistance per area. A substantial groove formation in which a gate structure is constituted is performed beforehand utilizing the LOCOS method before the formation of a p-type base layer and an n.sup.+ -type source layer. The p-type base layer and the n.sup.+ -type source layer are then formed by double diffusion in a manner of self-alignment with respect to a LOCOS oxide film, simultaneously with which channels are set at sidewall portions of the LOCOS oxide film. Thereafter the LOCOS oxide film is removed to provide a U-groove so as to constitute the gate structure. Namely, the channels are set by the double diffusion of the manner of self-alignment with respect to the LOCOS oxide film, so that the channels, which are set at the sidewall portions at both sides of the groove, provide a structure of exact bilateral symmetry, there is no positional deviation of the U-groove with respect to the base layer end, and the length of the bottom face of the U-groove can be made minimally short. Therefore, the unit cell size is greatly reduced, and the ON-resistance per area is greatly decreased.
摘要翻译： 垂直型功率MOSFET可显着降低每个区域的导通电阻。 在形成p型基极层和n +型源极层之前，利用LOCOS方法预先利用构成栅极结构的实质的槽形成。 然后通过相对于LOCOS氧化物膜的自对准的双扩散形成p型基极层和n +型源极层，同时将通道设置在LOCOS氧化物膜的侧壁部分。 此后，去除LOCOS氧化物膜以提供U形槽以构成栅极结构。 即，通过相对于LOCOS氧化膜的自对准方式的双扩散来设定通道，使得设置在凹槽两侧的侧壁部分处的通道提供精确双边的结构 U形槽相对于基底层端部没有位置偏离，U槽的底面的长度最短。 因此，单元电池尺寸大大降低，并且每个面积的导通电阻大大降低。
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公开(公告)号：US5776812A
公开(公告)日：1998-07-07
申请号：US413410
申请日：1995-03-30
IPC分类号： H01L21/336 , H01L29/04 , H01L29/06 , H01L29/423 , H01L29/78
CPC分类号： H01L29/0696 , H01L29/045 , H01L29/7813 , H01L29/4236
摘要： A manufacturing method of a MOSFET having a channel part on the side surface of a groove, which does not permit the introduction of defects or contaminant into the channel part and which can make the shape of the groove uniform. An n.sup.- -type epitaxial layer having a low impurity concentration is formed on a main surface of an n.sup.+ -type semiconductor substrate. This surface is specified as a main surface, and chemical dry etching is applied to a specified region of this main surface. A region including a surface generated by the chemical dry etching is selectively oxidized to form a selective oxide film to a specified thickness. Following this process, p-type and n-type impurities are doubly diffused from the main surface to define the length of the channel and form a base layer and a source layer. Furthermore, the n.sup.+ -type semiconductor substrate is specified as a drain layer. After the double diffusion, a gate electrode is formed through a gate oxide film and a source electrode and a drain electrode are formed.
摘要翻译： 一种MOSFET的制造方法，其具有在槽的侧面上的通道部分，其不允许将缺陷或污染物引入通道部分中并且可以使槽的形状均匀。 在n +型半导体衬底的主表面上形成具有低杂质浓度的n型外延层。 该表面被指定为主表面，并且化学干蚀刻被施加到该主表面的指定区域。 包括通过化学干蚀刻生成的表面的区域被选择性地氧化以形成具有特定厚度的选择性氧化膜。 在该过程之后，p型和n型杂质从主表面双重扩散以限定通道的长度并形成基层和源层。 此外，n +型半导体衬底被指定为漏极层。 在双扩散之后，通过栅极氧化膜形成栅电极，形成源电极和漏电极。
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公开(公告)号：US5744826A
公开(公告)日：1998-04-28
申请号：US785952
申请日：1997-01-22
CPC分类号： H01L29/7813 , H01L29/66068 , H01L29/7828 , H01L29/0696 , H01L29/1608 , Y10S438/931
摘要： A semiconductor substrate 4 consisting of an n.sup.+ -type substrate 1, an n.sup.- -type silicon carbide semiconductor layer 2 and a p-type silicon carbide semiconductor layer 3, made of hexagonal crystal-based single crystal silicon carbide with the main surface having a planar orientation approximately in the (0001) carbon face. An n.sup.+ -type source region 5 is formed in the surface layer of the semiconductor layer 3, and a trench 7 runs from the main surface through the region 5 and the semiconductor layer 3 reaching to the semiconductor layer 2, and extending approximately in the �1120! direction. An n-type silicon carbide semiconductor thin-film layer 8 is provided on the region 5, the semiconductor layer 3 and the semiconductor layer 2 on the side walls of the trench 7, while a gate electrode layer 10 is formed on the inner side of a gate insulating film 9, a source electrode layer 12 is formed on the surface of the semiconductor region 5, and a drain electrode layer 13 is formed on the surface of the n.sup.+ -type substrate 1.
摘要翻译： 由n +型基板1，n型碳化硅半导体层2和p型碳化硅半导体层3构成的半导体基板4由六面晶体型单晶碳化硅制成，主表面具有 大概在（000 + E，ovs 1 + EE）碳面的平面取向。 在半导体层3的表面层中形成n +型源极区域5，并且沟槽7从主表面延伸穿过半导体层2的区域5和半导体层3，并且大致在[ 11 + E，ovs 2 + EE 0]方向。 在沟槽7的侧壁上的区域5，半导体层3和半导体层2上设置n型碳化硅半导体薄膜层8，而在栅极电极层10的内侧形成有栅电极层10 栅极绝缘膜9，在半导体区域5的表面上形成源电极层12，在n +型衬底1的表面上形成漏电极层13。
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公开(公告)号：US5543703A
公开(公告)日：1996-08-06
申请号：US362408
申请日：1994-12-23
申请人： Shin Kusase , Kenzo Mitani , Atsushi Umeda , Norihito Tokura , Hirohide Sato
发明人： Shin Kusase , Kenzo Mitani , Atsushi Umeda , Norihito Tokura , Hirohide Sato
CPC分类号： H01L29/7813 , H01L29/7803 , H02J7/1492 , H02M7/219 , H02P9/48 , H01L29/1608 , H01L29/45 , H02P2101/45 , Y02T10/92
摘要： A vehicular generator motor performing generator operation and motor operation is disclosed. The generator motor comprises an AC-DC converter means and a switching means. The converter means is composed of a plurality of MOSFETs and connected between each armature coil and a vehicular storage battery. Alternating current produced across the coils is converted into a direct current for charging the battery by the AC-DC converter means in generator operation mode. In motor operation mode, the DC output from the battery is converted into an alternating current for setting up a rotating magnetic field by the converter means, and the battery output is fed to the armature coils. The mode of operation of the MOSFETs is switched between these two modes by the switching means. The rotating field produces a certain phase difference with the magnetic field developed by the rotating magnetic poles. The MOSFETs are made of SiC having a smaller resistivity than that of Si. This ensures a high withstand voltage necessary during power generation. Loss caused by large current flowing in the motor operation mode is reduced. Good driving torque can be obtained.
摘要翻译： 公开了一种执行发电机运行和电动机运行的车辆发电机。 发电机电动机包括AC-DC转换器装置和开关装置。 转换器装置由多个MOSFET构成，并连接在每个电枢线圈和车辆蓄电池之间。 在线圈中产生的交流电流被转换成用于通过AC-DC转换器装置在发电机运行模式下为电池充电的直流电流。 在电动机运转模式下，电池的直流输出转换为交流电，用于通过转换装置设置旋转磁场，电池输出被馈送到电枢线圈。 通过开关装置在这两种模式之间切换MOSFET的工作模式。 旋转磁场与由旋转磁极产生的磁场产生一定的相位差。 MOSFET的电阻率比Si的电阻率小，由SiC制成。 这确保在发电期间所需的高耐受电压。 电动机运转模式中流过的大电流引起的损耗减少。 可获得良好的驱动力矩。
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公开(公告)号：US5365085A
公开(公告)日：1994-11-15
申请号：US735512
申请日：1991-07-29
申请人： Norihito Tokura , Tsuyoshi Yamamoto
发明人： Norihito Tokura , Tsuyoshi Yamamoto
IPC分类号： G05F1/56 , H01L27/02 , H01L27/04 , H01L29/06 , H01L29/78 , H01L29/74 , H01L31/111 , H01L29/00 , H01L27/082
CPC分类号： H01L29/7813 , H01L27/0248 , H01L29/7815
摘要： A power semiconductor device constituted of a MOSFET incorporating a current detecting function for detecting current making use of a voltage drop developed across a channel resistance in which variations in the channel resistance due to its temperature and the gate voltage are compensated for and thereby highly accurate current detection is achieved.
摘要翻译： 一种功率半导体器件，其由具有电流检测功能的MOSFET构成，该MOSFET用于检测利用在沟道电阻上产生的电压降的电流，其中由于其温度和栅极电压导致的沟道电阻的变化被补偿，并由此高精度的电流 实现检测。
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公开(公告)号：US4693115A
公开(公告)日：1987-09-15
申请号：US724964
申请日：1985-04-19
申请人： Norihito Tokura , Mitiyasu Moritugu , Hisasi Kawai
发明人： Norihito Tokura , Mitiyasu Moritugu , Hisasi Kawai
CPC分类号： G01F1/6986 , G01F1/698
摘要： A device for measuring the flow rate of air includes an electric heater arranged in a path of the air flow and a temperature compensation resistor arranged at a distance from the heater in the path of the air flow, the resistance of the resistor being changed according to the temperature of the air. A selective current supply unit supplied the heater with a current having a current value selected from one of two, large and small, current values. A temperature selection unit selects a plurality of temperature values of the electric heater according to the change of the resistance of the temperature compensation resistor. A current value switching unit switches the current level of the selective current supply under the condition that one of the selected temperature values is attained or maintained. The flow rate of the air is measured by a time measurement unit for measuring the time required for the change of temperature between the plurality of temperature values due to the change of the temperature of the electric heater caused by the switching by the current value switching unit.
摘要翻译： 用于测量空气流量的装置包括布置在空气流路径中的电加热器和在空气流动路径中与加热器相距一定距离的温度补偿电阻器，电阻器的电阻根据 空气的温度。 选择电流供应单元向加热器提供具有从两个，大和小两个当前值中的一个中选择的电流值的电流。 温度选择单元根据温度补偿电阻器的电阻的变化来选择电加热器的多个温度值。 电流值切换单元在获得或保持所选温度值之一的条件下切换选择电流源的电流。 空气的流量由时间测量单元测量，用于测量由电流值切换单元的切换引起的电加热器的温度变化导致的多个温度值之间的温度变化所需的时间 。
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58.发明授权
公开(公告)号：US4677378A
公开(公告)日：1987-06-30
申请号：US826014
申请日：1986-02-04
申请人： Norihito Tokura , Hisasi Kawai
发明人： Norihito Tokura , Hisasi Kawai
IPC分类号： G01B7/00 , G01D5/14 , G01D5/245 , G01P3/481 , G01P3/488 , G01B7/30 , F02P17/00 , G01P3/48 , H01L41/08
摘要： A displacement sensor is provided with first and second piezoelectric elements, a pair of electrodes at one and the other ends of each of the first and the second piezoelectric elements; a permanent magnet mechanically fixed to one end of the first piezoelectric element; a small piece mechanically fixed to one end of the second piezoelectric element and having almost the same weight as that of the permanent magnet; and a base plate to which the other ends of the first and the second piezoelectric elements are mechanically fixed; wherein the electrodes provided at the other end of each of the first and the second piezoelectric elements are electrically connected, and the electrodes provided at one end of each of the first and the second piezoelectric elements are used as output terminals.Also, a pair of small pieces made of a magnetic material and a non-magnetic material can be used instead of the above permanent magnet and small piece.
摘要翻译： 位移传感器设置有第一和第二压电元件，一对电极位于第一和第二压电元件的每一个的一端和另一端; 机械地固定在所述第一压电元件的一端的永磁体; 机械地固定到第二压电元件的一端并且具有与永磁体几乎相同的重量的小件; 以及第一和第二压电元件的另一端被机械地固定在其上的基板; 其中设置在第一和第二压电元件的每一个的另一端的电极电连接，并且设置在第一和第二压电元件的每一个的一端的电极用作输出端子。 此外，可以使用由磁性材料和非磁性材料制成的一对小件代替上述永久磁铁和小件。
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公开(公告)号：US4674467A
公开(公告)日：1987-06-23
申请号：US849377
申请日：1986-04-08
申请人： Norihito Tokura , Hisasi Kawai , Masahiro Goto
发明人： Norihito Tokura , Hisasi Kawai , Masahiro Goto
摘要： The apparatus includes an ignition instruction signal generating unit for repeatedly generating a first ignition instruction signal instructing an AC discharging duration and a second ignition instruction signal instructing the current flow time of a first primary coil at each ignition timing; and an ignition control circuit unit for causing the first and second switching elements to perform a push-pull operation for a predetermined period of time upon reception of a given ignition instruction signal. When it is detected from a current detection signal from the current detection element upon reception of the first ignition instruction signal that the current of one of the first and second closed circuits has reached a predetermined value, a signal for turning OFF the one of the first and second closed circuits is supplied to one of the first and second switching elements and a signal for turning ON the other closed circuit is supplied to the other switching element so as to enable the push-pull operation of the switching elements. Accordingly, one of the switching elements is turned ON in response to the second ignition instruction signal for the current flow time of the primary thereby, and is then turned OFF. Thus, an ignition timing can be determined precisely, and a sufficiently high voltage can be obtained.
摘要翻译： 该装置包括点火指示信号产生单元，用于重复地产生指示AC放电持续时间的第一点火指令信号和指示在每个点火正时的第一初级线圈的电流流动时间的第二点火指令信号; 以及点火控制电路单元，用于在接收给定的点火指示信号时使第一和第二开关元件在预定时间段内执行推挽操作。 当从第一点火指示信号接收到来自当前检测元件的当前检测信号检测到第一和第二闭合电路中的一个的电流已经达到预定值时，关闭第一个 并且第二闭合电路被提供给第一和第二开关元件中的一个，并且用于接通另一个闭合电路的信号被提供给另一个开关元件，以便能够进行开关元件的推挽操作。 因此，响应于第一点火指示信号，一个开关元件被接通，从而使主开关元件的当前流动时间变为ON，然后断开。 因此，可以精确地确定点火正时，并且可以获得足够高的电压。
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公开(公告)号：US4550308A
公开(公告)日：1985-10-29
申请号：US486840
申请日：1983-04-20
申请人： Norihito Tokura , Hisasi Kawai , Tokio Kohama , Kenji Kanehara
发明人： Norihito Tokura , Hisasi Kawai , Tokio Kohama , Kenji Kanehara
摘要： A signal converting apparatus for converting voltage into a pulse signal with a corresponding pulse-width comprises a switching circuit for selecting either one of an input voltage to be converted or a constant voltage depending upon a binary switching signal. The selected voltage is integrated with respect to time by an integrating circuit. When the output from the integrating circuit has reached an upper limit voltage or a lower limit voltage, the above-mentioned binary switching signal which is an output signal of this signal converting apparatus is inverted by a comparator/inverter circuit.
摘要翻译： 用于将电压转换成具有相应脉冲宽度的脉冲信号的信号转换装置包括用于根据二进制切换信号选择要转换的输入电压或恒定电压中的任一个的开关电路。 所选择的电压通过积分电路相对于时间积分。 当积分电路的输出达到上限电压或下限电压时，作为该信号转换装置的输出信号的上述二进制开关信号由比较器/反相器电路反相。
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