公开(公告)号：US07202183B2

公开(公告)日：2007-04-10

申请号：US11341199

申请日：2006-01-27

Applicant: Neal R. Rueger ,  William Budge ,  Weimin Li ,  Gurtej S. Sandhu

Inventor： Neal R. Rueger ,  William Budge ,  Weimin Li ,  Gurtej S. Sandhu

IPC: H01L21/31

CPC classification number: H01L21/02274 ,  C23C16/045 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/76224 ,  H01L21/76837

Abstract: The invention includes a method of filling gaps in a semiconductor substrate. A substrate and a gas mixture containing at least one heavy-hydrogen compound are provided within a reaction chamber. The gas mixture is reacted to form a layer of material over the substrate by simultaneous deposition and etch of the layer. The layer of material fills the gap such that the material within the gap is essentially void-free. The invention includes a method of providing improved deposition rate uniformity. A material is deposited over a surface in the presence of at least one gas selected from the group consisting of D2, HD, DT, T2 and TH. The net deposition rate during the deposition has a degree of variance across the surface which is measurably improved relative to a corresponding degree of variance that occurs during deposition utilizing H2 under otherwise substantially identical conditions.

Abstract translation: 本发明包括填充半导体衬底中的间隙的方法。 在反应室内设置底物和含有至少一种重氢化合物的气体混合物。 通过同时沉积和蚀刻该层，使气体混合物反应以在衬底上形成一层材料。 材料层填充间隙，使得间隙内的材料基本上无空隙。 本发明包括提供改进的沉积速率均匀性的方法。 在选自由D 2，HD，DT，T 2和TH组成的组中的至少一种气体存在下，材料沉积在表面上。 沉积期间的净沉积速率在整个表面上具有相对于在其它实质上相同的条件下利用H 2 N沉积期间发生的相应的变化程度可以显着改善的表面上的变化程度。

公开(公告)号：US06660658B2

公开(公告)日：2003-12-09

申请号：US10205235

申请日：2002-07-26

Applicant: Gurtej S. Sandhu ,  John T. Moore ,  Neal R. Rueger

Inventor： Gurtej S. Sandhu ,  John T. Moore ,  Neal R. Rueger

IPC: H01L2131

CPC classification number: H01L21/02332 ,  H01L21/0234 ,  H01L21/265 ,  H01L21/28061 ,  H01L21/28167 ,  H01L21/28185 ,  H01L21/28202 ,  H01L21/3144 ,  H01L29/513 ,  H01L29/518 ,  H01L29/6659 ,  H01L29/7833

Abstract: The invention encompasses a method of incorporating nitrogen into a silicon-oxide-containing layer. The silicon-oxide-containing layer is exposed to a nitrogen-containing plasma to introduce nitrogen into the layer. The nitrogen is subsequently thermally annealed within the layer to bond at least some of the nitrogen to silicon within the layer. The invention also encompasses a method of forming a transistor. A gate oxide layer is formed over a semiconductive substrate. The gate oxide layer comprises silicon dioxide. The gate oxide layer is exposed to a nitrogen-containing plasma to introduce nitrogen into the layer, and the layer is maintained at less than or equal to 400° C. during the exposing. Subsequently, the nitrogen within the layer is thermally annealed to bond at least a majority of the nitrogen to silicon. At least one conductive layer is formed over the gate oxide layer. Source/drain regions are formed within the semiconductive substrate, and are gatedly connected to one another by the at least one conductive layer. The invention also encompasses transistor structures.

公开(公告)号：US08598041B2

公开(公告)日：2013-12-03

申请号：US13447520

申请日：2012-04-16

Applicant: Sanket Sant ,  Gurtej Sandhu ,  Neal R. Rueger

Inventor： Sanket Sant ,  Gurtej Sandhu ,  Neal R. Rueger

IPC: H01L21/302

CPC classification number: H01L21/3088 ,  H01L21/0337 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/76802 ,  H01L27/1052

Abstract: Multiple pitch-multiplied spacers are used to form mask patterns having features with exceptionally small critical dimensions. One of each pair of spacers formed mandrels is removed and alternating layers, formed of two mutually selectively etchable materials, are deposited around the remaining spacers. Layers formed of one of the materials are then etched, leaving behind vertically-extending layers formed of the other of the materials, which form a mask pattern. Alternatively, instead of depositing alternating layers, amorphous carbon is deposited around the remaining spacers followed by a plurality of cycles of forming pairs of spacers on the amorphous carbon, removing one of the pairs of spacers and depositing an amorphous carbon layer. The cycles can be repeated to form the desired pattern. Because the critical dimensions of some features in the pattern can be set by controlling the width of the spaces between spacers, exceptionally small mask features can be formed.

公开(公告)号：US08414787B2

公开(公告)日：2013-04-09

申请号：US12780686

申请日：2010-05-14

Applicant: Neal R. Rueger ,  Mark J. Williamson ,  Gurtej S. Sandhu

Inventor： Neal R. Rueger ,  Mark J. Williamson ,  Gurtej S. Sandhu

IPC: H01L21/302 ,  B82B1/00

CPC classification number: H01L21/31116 ,  H01L21/31144 ,  H01L21/3127

Abstract: Methods and devices for selective etching in a semiconductor process are shown. Chemical species generated in a reaction chamber provide both a selective etching function and concurrently form a protective coating on other regions. An electron beam provides activation to selective chemical species. In one example, reactive species are generated from a plasma source to provide an increased reactive species density. Addition of other gasses to the system can provide functions such as controlling a chemistry in a protective layer during a processing operation. In one example an electron beam array such as a carbon nanotube array is used to selectively expose a surface during a processing operation.

Abstract translation: 示出了在半导体工艺中选择性蚀刻的方法和装置。 在反应室中产生的化学物质既提供选择性蚀刻功能又在其它区域形成保护涂层。 电子束为选择性化学物质提供活化。 在一个实例中，从等离子体源产生反应性物质以提供增加的反应物种密度。 在系统中添加其他气体可以提供诸如在处理操作期间控制保护层中的化学物质的功能。 在一个实例中，使用诸如碳纳米管阵列的电子束阵列在处理操作期间选择性地暴露表面。

公开(公告)号：US08274221B2

公开(公告)日：2012-09-25

申请号：US13231806

申请日：2011-09-13

Applicant: Neal R. Rueger ,  Stephen J. Kramer

Inventor： Neal R. Rueger ,  Stephen J. Kramer

IPC: H01J17/49 ,  H01J9/00

CPC classification number: H01J9/02 ,  H01J11/10 ,  H01J37/32596 ,  H05H1/2406 ,  H05H1/46 ,  H05H2001/466

Abstract: Some embodiments include methods of forming plasma-generating microstructures. Aluminum may be anodized to form an aluminum oxide body having a plurality of openings extending therethrough. Conductive liners may be formed within the openings, and circuitry may be formed to control current flow through the conductive liners. The conductive liners form a plurality of hollow cathodes, and the current flow is configured to generate and maintain plasmas within the hollow cathodes. The plasmas within various hollow cathodes, or sets of hollow cathodes, may be independently controlled. Such independently controlled plasmas may be utilized to create a pattern in a display, or on a substrate. In some embodiments, the plasmas may be utilized for plasma-assisted etching and/or plasma-assisted deposition. Some embodiments include constructions and assemblies containing multiple plasma-generating structures.

Abstract translation: 一些实施例包括形成等离子体产生微结构的方法。 铝可以被阳极化以形成具有延伸穿过其中的多个开口的氧化铝体。 可以在开口内形成导电衬里，并且可以形成电路以控制通过导电衬套的电流。 导电衬里形成多个中空阴极，并且电流流动被配置为在中空阴极内产生和维持等离子体。 各种空心阴极内的等离子体或一组空心阴极可以独立控制。 这种独立控制的等离子体可用于在显示器或基板上产生图案。 在一些实施例中，等离子体可用于等离子体辅助蚀刻和/或等离子体辅助沉积。 一些实施例包括包含多个等离子体产生结构的构造和组件。

公开(公告)号：US20110269252A1

公开(公告)日：2011-11-03

申请号：US13179851

申请日：2011-07-11

Applicant: Sanket Sant ,  Gurtej Sandhu ,  Neal R. Rueger

Inventor： Sanket Sant ,  Gurtej Sandhu ,  Neal R. Rueger

IPC: H01L21/66

CPC classification number: H01L21/3088 ,  H01L21/0337 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/76802 ,  H01L27/1052

Abstract: Multiple pitch-multiplied spacers are used to form mask patterns having features with exceptionally small critical dimensions. One of each pair of spacers formed around a plurality of mandrels is removed and alternating layers, formed of two mutually selectively etchable materials, are deposited around the remaining spacers. Layers formed of one of the materials are then etched, leaving behind vertically-extending layers formed of the other of the materials, which form a mask pattern. Alternatively, instead of depositing alternating layers, amorphous carbon is deposited around the remaining spacers followed by a plurality of cycles of forming pairs of spacers on the amorphous carbon, removing one of the pairs of spacers and depositing an amorphous carbon layer. The cycles can be repeated to form the desired pattern. Because the critical dimensions of some features in the pattern can be set by controlling the width of the spaces between spacers, exceptionally small mask features can be formed.

Abstract translation: 使用多个间距倍数的间隔物来形成具有特别小的临界尺寸的特征的掩模图案。 去除围绕多个心轴形成的每对间隔件中的一个，并且由两个相互选择性可蚀刻的材料形成的交替层围绕剩余的间隔物沉积。 然后蚀刻由一种材料形成的层，留下由形成掩模图案的另一种材料形成的垂直延伸层。 或者，代替沉积交替的层，非晶碳沉积在剩余的间隔物周围，随后在无定形碳上形成成对隔离物的多个循环，去除一对隔离物之一并沉积无定形碳层。 可以重复循环以形成所需的图案。 由于图案中的某些特征的临界尺寸可以通过控制间隔物之间​​的间隔的宽度来设定，所以可以形成特别小的掩模特征。

公开(公告)号：US08049514B2

公开(公告)日：2011-11-01

申请号：US12705349

申请日：2010-02-12

Applicant: Gurtej S. Sandhu ,  Neal R. Rueger

Inventor： Gurtej S. Sandhu ,  Neal R. Rueger

IPC: G01R31/02

CPC classification number: H01L22/12 ,  B82Y15/00 ,  H01J2237/2814 ,  H01J2237/2818

Abstract: Methods and systems that include a nanotube used as an emitter in the testing and fabrication of integrated circuits. The nanotube emits a signal to a substrate. Based on the signal or the electrical properties, e.g., current induced in the substrate by the signal, the region of the substrate is characterized. The characterization includes topology of the region of the substrate such as determining whether a recess in the substrate has a proper depth or other dimensions or characteristics of the substrate.

Abstract translation: 包括在集成电路的测试和制造中用作发射极的纳米管的方法和系统。 纳米管向衬底发出信号。 基于信号或电特性，例如由信号在衬底中感应的电流，衬底的区域被表征。 表征包括衬底的区域的拓扑，例如确定衬底中的凹槽是否具有适当的深度或衬底的其他尺寸或特性。

公开(公告)号：US20100314354A1

公开(公告)日：2010-12-16

申请号：US12861543

申请日：2010-08-23

Applicant: Neal R. Rueger ,  Mark J. Williamson ,  Gurtej S. Sandhu ,  Justin R. Arrington

Inventor： Neal R. Rueger ,  Mark J. Williamson ,  Gurtej S. Sandhu ,  Justin R. Arrington

IPC: B29D11/00 ,  B05D3/10

CPC classification number: H01L31/02325 ,  B29D11/00365 ,  H01L22/20 ,  H01L27/14627

Abstract: Methods and apparatus may operate to position a sample within a processing chamber and operate on a surface of the sample. Further activities may include creating a layer of reactive material in proximity with the surface, and exciting a portion of the layer of reactive material in proximity with the surface to form chemical radicals. Additional activities may include removing a portion of the material in proximity to the excited portion of the surface to a predetermined level, and continuing the creating, exciting and removing actions until at least one of a plurality of stop criteria occurs.

Abstract translation: 方法和装置可以操作以将样品定位在处理室内并在样品的表面上操作。 进一步的活动可以包括在表面附近形成一层反应性材料，并且激发邻近表面的一部分反应性材料以形成化学自由基。 另外的活动可以包括将表面的被激发部分附近的材料的一部分移除到预定水平，并且继续创建，激励和移除动作，直到出现多个停止标准中的至少一个。

公开(公告)号：US07819005B2

公开(公告)日：2010-10-26

申请号：US11767962

申请日：2007-06-25

Applicant: Neal R. Rueger

Inventor： Neal R. Rueger

IPC: G01N29/04 ,  H02N2/18

CPC classification number: G01H11/00 ,  H03H3/0077

Abstract: Devices usable as sensors, as transducers, or as both sensors and transducers include one or more nanotubes or nanowires. In some embodiments, the devices may each include a plurality of sensor/transducer devices carried by a common substrate. The sensor/transducer devices may be individually operable, and may exhibit a plurality of resonant frequencies to enhance the operable frequency bandwidth of the devices. Sensor/transducer devices include one or more elements configured to alter a resonant frequency of a nanotube. Such elements may be selectively and individually actuable. Methods for sensing mechanical displacements and vibrations include monitoring an electrical characteristic of a nanotube. Methods for generating mechanical displacements and vibrations include using an electrical signal to induce mechanical displacements or vibrations in one or more nanotubes. Methods for adjusting an electrical signal include passing an electrical signal through a nanotube and changing a resonant frequency of the nanotube.

Abstract translation: 可用作传感器，传感器或传感器和换能器的装置包括一个或多个纳米管或纳米线。 在一些实施例中，装置可以各自包括由公共衬底承载的多个传感器/换能器装置。 传感器/换能器装置可以单独操作，并且可以呈现多个谐振频率以增强装置的可操作频率带宽。 传感器/换能器装置包括配置成改变纳米管的共振频率的一个或多个元件。 这样的元件可以是选择性地和单独地致动的。 用于感测机械位移和振动的方法包括监测纳米管的电特性。 产生机械位移和振动的方法包括使用电信号在一个或多个纳米管中引起机械位移或振动。 用于调整电信号的方法包括使电信号通过纳米管并改变纳米管的谐振频率。

公开(公告)号：US20100051577A1

公开(公告)日：2010-03-04

申请号：US12203460

申请日：2008-09-03

Applicant: Neal R. Rueger

Inventor： Neal R. Rueger

IPC: C23F1/02 ,  H05H1/00

CPC classification number: C23F4/00 ,  H01L21/321 ,  H01L21/32134

Abstract: The present disclosure includes devices, methods, and systems for processing copper and, in particular, copper layer processing using sulfur plasma, One or more embodiments can include a method of forming a copper sulfur compound by reacting copper with a plasma gas including sulfur and removing at least a portion of the copper sulfur compound with water.

Abstract translation: 本公开包括用于处理铜的装置，方法和系统，特别是使用硫等离子体的铜层处理。一个或多个实施例可以包括通过使铜与包括硫的等离子气体反应形成铜硫化合物的方法， 至少一部分铜硫化合物与水。