摘要:
A powder feed apparatus and a control method thereof for a powder molding press wherein in feeding powder from a hopper of the powder feed apparatus to a feeder slidably disposed on a die plate of the press proper and charging powder into a die in the die plate the feeder is electronically controlled to a correct position on the die. Powder is fed from a powder feed apparatus into a feeder slidably disposed on a die plate of a press proper and a feeder drive motor is servo-controlled by an output obtained by comparing detection outputs from a position detector for detecting the vertical position of the die plate of the press proper and a position detector for detecting the position of the feeder in its sliding direction. As a result, it is possible to avoid the trouble of changing cams or inserting insert cams every time the shape of the compact being molded changes and it is possible to easily make changes to the movement speed of the feeder in correspondence with changes to the compact.
摘要:
Proposed is a magnetic recording medium consisting of a non-magnetic substrate and a magnetic recording layer formed thereon by the method of sputtering, in which the non-magnetic substrate is a disk of single crystal silicon having a surface of the crystallographic orientation of (100), the surface roughness Rp being 40 nm or smaller. By virtue of the use of the unique material for the substrate, the magnetic recording layer is outstandingly stable as compared with conventional aluminum or glass substrates and the magnetic layer formed thereon by sputtering has a greatly improved coercive force of 1300 oersted or higher.
摘要:
A magneto-optical recording medium having a layered structure consisting of a first dielectric layer, magnetic recording layer, second dielectric layer and reflecting layer successively formed on a transparent substrate plate can be imparted with improved performance relative to the recording sensitivity and the C/N ratio when the recording layer and the second dielectric layer each have such a thickness that the angle .delta. given by the equation .delta.=tan.sup.-1 (.epsilon./.theta.k), in which .epsilon. is the Kerr ellipticity of the regenerative light and .theta.k is the Kerr rotation angle, does not exceed 10.degree., the thickness of the recording layer being in the range from 8 nm to 13.5 nm and the thickness of the second dielectric layer satisfying the relationship given by the inequality0.06.ltoreq.nd/.lambda..ltoreq.0.14,in which d is the thickness of the second dielectric layer, .lambda. is the wavelength of the regenerative light for reading-out of the recorded signals and n is the refractive index of the material forming the second dielectric layer to the regenerative light of wavelength .lambda..
摘要:
A rollable or plastically deformable Sendust-type magnetic alloy containing by weight 3 to 8% aluminum, 4 to 8% silicon, 0.1 to 2% niobium or tantalum or mixture thereof, 0.5 to 7% a mixture of vanadium and copper and the balance iron. The alloy is especially suitable for use with high-frequency inputs.
摘要:
A phase shift mask blank is composed of a transparent substrate and a phase shift film thereon. The phase shift film is made of at least two types of layer stacked in alternation, each type having a different composition and containing at least one element selected from among metals, silicon, oxygen and nitrogen. The alternately layered film enables a high-quality phase shift mask blank having improved chemical resistance to be achieved.
摘要:
In a photomask blank comprising a light-shielding film and an antireflective film on a transparent substrate, the light-shielding film and the antireflective film are formed of a chromium base material containing oxygen, nitrogen and carbon such that the content of carbon decreases stepwise or continuously from a surface side toward the substrate. The photomask blank can be etched at a controlled rate to produce perpendicular walls. A photomask is manufactured by lithographically patterning the photomask blank. The photomask blank and photomask have uniform film properties and contribute to the microfabrication of semiconductor ICs of greater density and finer feature size.
摘要:
The present invention provides a magnetron sputtering system, which ensures a formation of a desired thin film, using a thick target. In the sputtering process, a portion of the target does not have erosion free portions. The present invention provides a magnetron sputtering system comprising a chamber for sputtering, a target electrode 5 installed inside said chamber, a substrate electrode 6 installed in the chamber opposite to the target electrode, a ring-shaped magnet 2 installed so as to enclose the side surface of the target electrode, and a semi-circular disk shaped magnet installed opposite to the target-mounted surface of the target electrode, wherein the semi-circular disk shaped magnet is rotated in the circumferential direction of the target electrode and is magnetized in the direction perpendicular to the target electrode. This ensures a specific magnetic field component to be generated over the thick planar target surface 3.
摘要:
There is disclosed a method for evaluation of the safety of a chemical compound, which includes the steps of: (a) reacting a chemical compound with recombinant yeast cells expressing, or in other words producing, human cytochrome P450 molecular species P450 1A2, P450 2C9, P450 2E1 and P450 3A4 together with a yeast NADPH-P450 reductase, which may be in the form of a fused enzyme with each of said human cytochrome P450 molecular species, or with the cell free extracts of the yeast cells; and (b) analyzing the resulting metabolite to determine the safety of the compound. According to this method, it can be determined whether a test compound will be converted into a carcinogenic or mutagenic form through the metabolism in the human liver, and whether the test compound or its metabolite has mutagenicity.
摘要:
A photomask blank has at least one layer of chromium base film on a transparent substrate. The chromium base film of chromium oxycarbide (CrCO) or chromium oxynitride carbide (CrCON) is formed by a reactive sputtering technique using chromium or chromium containing O, N or C as the target and a mixture of carbon dioxide gas and an inert gas as the sputtering gas. A photomask is manufactured by lithographically patterning the photomask blank. The photomask blank and photomask are of quality featuring high uniformity within the substrate plane and ease of control during manufacture.
摘要:
A phase shift mask blank has a phase shift film of MoSiOC or MoSiONC on a transparent substrate, and optionally a chromium-based light-shielding film, a chromium-based antireflection film or a multilayer combination of both on the phase shift film. A manufacture method involving depositing the MoSi base phase shift film by a reactive sputtering technique using a sputtering gas containing carbon dioxide produces a phase shift mask blank and phase shift mask of quality, with advantages of in-plane uniformity and easy control during manufacture.