公开(公告)号：US07269808B2

公开(公告)日：2007-09-11

申请号：US10908786

申请日：2005-05-26

Applicant: James A. Bruce ,  James A. Culp ,  John D. Nickel ,  Jacek G. Smolinski

Inventor： James A. Bruce ,  James A. Culp ,  John D. Nickel ,  Jacek G. Smolinski

IPC: G06F17/50

CPC classification number: G06F17/5081

Abstract: A design verification method, including (a) providing in a design a design electrically conducting line and a design contact region being in direct physical contact with the design electrically conducting line; (b) modeling a simulated electrically conducting line of the design electrically conducting line; (c) simulating a possible contact region of the design contact region, wherein the design contact region and the possible contact region are not identical; and (d) determining that the design electrically conducting line and the design contact region are potentially defective if an interfacing surface area of the simulated electrically conducting line and the possible contact region is less than a pre-specified value.

Abstract translation: 一种设计验证方法，包括（a）在设计中提供与设计导电线直接物理接触的设计导电线和设计接触区; （b）对设计导电线的模拟导电线进行建模; （c）模拟设计接触区域的可能的接触区域，其中设计接触区域和可能的接触区域不相同; 以及（d）如果所述模拟导电线路和所述可能接触区域的接口表面积小于预定值，则确定所述设计导电线路和所述设计接触区域具有潜在的缺陷。

公开(公告)号：US06750109B2

公开(公告)日：2004-06-15

申请号：US10064305

申请日：2002-07-01

Applicant: James A. Culp ,  Jawahar P. Nayak ,  Werner A. Rausch ,  Melanie J. Sherony ,  Steven H. Voldman ,  Noah D. Zamdmer

Inventor： James A. Culp ,  Jawahar P. Nayak ,  Werner A. Rausch ,  Melanie J. Sherony ,  Steven H. Voldman ,  Noah D. Zamdmer

IPC: H01L21331

CPC classification number: H01L29/4966 ,  H01L29/1083 ,  H01L29/7835

Abstract: A semiconductor chip includes a semiconductor substrate having a rectifying contact diffusion and a non-rectifying contact diffusion. A halo diffusion is adjacent the rectifying contact diffusion and no halo diffusion is adjacent the non-rectifying contact diffusion. The rectifying contact diffusion can be a source/drain diffusion of an FET to improve resistance to punch-through. The non-rectifying contact diffusion may be an FET body contact, a lateral diode contact, or a resistor or capacitor contact. Avoiding a halo for non-rectifying contacts reduces series resistance and improves device characteristics. In another embodiment on a chip having devices with halos adjacent diffusions, no halo diffusion is adjacent a rectifying contact diffusion of a lateral diode, significantly improving ideality of the diode and increasing breakdown voltage.

Abstract translation: 半导体芯片包括具有整流接触扩散和非整流接触扩散的半导体衬底。 光晕扩散与整流接触扩散相邻，并且没有晕圈扩散与非整流接触扩散相邻。 整流接触扩散可以是FET的源极/漏极扩散，以提高耐穿透性。 非整流接触扩散可以是FET体接触，横向二极管接触或电阻或电容器接触。 避免使用非整流触点的光圈可以降低串联电阻并提高器件特性。 在具有相邻扩散的光晕的器件的芯片的另一实施例中，没有卤素扩散与横向二极管的整流接触扩散相邻，从而显着地提高了二极管的理想性并增加了击穿电压。

公开(公告)号：US06541166B2

公开(公告)日：2003-04-01

申请号：US09766005

申请日：2001-01-18

Applicant: Scott M. Mansfield ,  Timothy A. Brunner ,  James A. Culp ,  Alfred K. Wong

Inventor： Scott M. Mansfield ,  Timothy A. Brunner ,  James A. Culp ,  Alfred K. Wong

IPC: G03F900

CPC classification number: G03F7/70433 ,  G03F1/70 ,  G03F7/70466 ,  H01J37/3026 ,  H01J2237/31761

Abstract: The present invention relates generally to a method for lithographically printing a mask pattern on a substrate, in particular a semiconductor substrate, wherein the mask pattern includes features with diverse pitches. These features may include device features such as vias or contact holes and lines in integrated circuits. The method comprises splitting the mask pattern into a plurality of masks, wherein one or more of the masks contains relatively tightly nested features and one or more of the masks contains relatively isolated features. Each of the plurality of masks is then successively exposed on a photoresist layer on the substrate. For each exposure, the exposure conditions, photoresist layer, other thin films layers, etching process, mask writing process, and/or mask pattern bias may be optimized for the tightly nested feature pattern or isolated feature pattern.

公开(公告)号：US08418087B2

公开(公告)日：2013-04-09

申请号：US13371537

申请日：2012-02-13

Applicant: Shayak Banerjee ,  Dureseti Chidambarrao ,  James A. Culp ,  Praveen Elakkumanan ,  Saibal Mukhopadhyay

Inventor： Shayak Banerjee ,  Dureseti Chidambarrao ,  James A. Culp ,  Praveen Elakkumanan ,  Saibal Mukhopadhyay

IPC: G06F17/50

CPC classification number: G06F17/5009 ,  G06F2217/10

Abstract: A method for implementing systematic, variation-aware integrated circuit extraction includes inputting a set of processing conditions to a plurality of variation models, each model corresponding to a separate systematic, parametric variation associated with semiconductor manufacturing of an integrated circuit layout; generating, for each variation model, a netlist update attributable to the associated variation, wherein the netlist update is an update with respect to an original netlist extracted from the integrated circuit layout; and storing the netlist updates generated for each of the processing conditions.

Abstract translation: 一种用于实现系统的变异感知集成电路提取的方法包括：将一组处理条件输入到多个变化模型，每个模型对应于与集成电路布局的半导体制造相关联的单独的系统参数变化; 针对每个变化模型生成归因于相关变化的网表更新，其中网表更新是相对于从集成电路布局提取的原始网表的更新; 以及存储针对每个处理条件生成的网表更新。

公开(公告)号：US08301290B2

公开(公告)日：2012-10-30

申请号：US12603679

申请日：2009-10-22

Applicant: James A. Culp ,  John J. Ellis-Monaghan ,  Jeffrey P. Gambino ,  Kirk D. Peterson ,  Jed H. Rankin

Inventor： James A. Culp ,  John J. Ellis-Monaghan ,  Jeffrey P. Gambino ,  Kirk D. Peterson ,  Jed H. Rankin

IPC: G06F19/00

CPC classification number: G06F17/5068 ,  G06F2217/10

Abstract: Disclosed are a system and a method of correcting systematic, design-based, parametric variations on integrated circuit chips to minimize circuit limited yield loss. Processing information and a map of a chip are stored. The processing information can indicate an impact, on a given device parameter, of changes in a value for a specification associated with a given process step. The map can indicate regional variations in the device parameter (e.g., threshold voltage). Based on the processing information and using the map as a guide, different values for the specification are determined, each to be applied in a different region of the integrated circuit chip during the process step in order to offset the mapped regional parametric variations. A process tool can then be selectively controlled to ensure that during chip manufacturing the process step is performed accordingly and, thereby to ensure that the regional parametric variations are minimized.

Abstract translation: 公开了一种用于校正集成电路芯片上的系统的，基于设计的参数变化的系统和方法，以最小化电路限制的产量损失。 存储处理信息和芯片的映射。 处理信息可以指示给定设备参数对与给定过程步骤相关联的规范的值的变化的影响。 地图可以指示设备参数中的区域变化（例如，阈值电压）。 基于处理信息并使用该图作为指导，确定规范的不同值，每个值在处理步骤期间应用于集成电路芯片的不同区域，以便抵消映射的区域参数变化。 然后可以选择性地控制处理工具，以确保在芯片制造期间相应地执行工艺步骤，从而确保区域参数变化最小化。

公开(公告)号：US08219943B2

公开(公告)日：2012-07-10

申请号：US12425603

申请日：2009-04-17

Applicant: John M Cohn ,  James A. Culp ,  Ulrich A. Finkler ,  Fook-Luen Heng ,  Mark A. Lavin ,  Jin Fuw Lee ,  Lars W. Liebmann ,  Gregory A. Northrop ,  Nakgeuon Seong ,  Rama N. Singh ,  Leon Stok ,  Pieter J. Woeltgens

Inventor： John M Cohn ,  James A. Culp ,  Ulrich A. Finkler ,  Fook-Luen Heng ,  Mark A. Lavin ,  Jin Fuw Lee ,  Lars W. Liebmann ,  Gregory A. Northrop ,  Nakgeuon Seong ,  Rama N. Singh ,  Leon Stok ,  Pieter J. Woeltgens

IPC: G06F17/50 ,  G06F19/00 ,  G03F1/00 ,  G21K5/00

CPC classification number: G06F17/5081 ,  G06F17/5009 ,  G06F17/5072

Abstract: A design system for designing complex integrated circuits (ICs), a method of IC design and program product therefor. A layout unit receives a circuit description representing portions in a grid and glyph format. A checking unit checks grid and glyph portions of the design. An elaboration unit generates a target layout from the checked design. A data prep unit prepares the target layout for mask making. A pattern caching unit selectively replaces portions of the design with previously cached results for improved design efficiency.

Abstract translation: 一种用于设计复杂集成电路（IC）的设计系统，一种IC设计方法和程序产品。 布局单元接收表示网格和字形格式的部分的电路描述。 检查单元检查设计的网格和字形部分。 精心设计单元从检查的设计生成目标布局。 数据准备单元准备掩模制作的目标布局。 模式高速缓存单元用先前缓存的结果有选择地替换设计的部分，以提高设计效率。

公开(公告)号：US08161422B2

公开(公告)日：2012-04-17

申请号：US12349108

申请日：2009-01-06

Applicant: Maharaj Mukherjee ,  James A. Culp ,  Scott M. Mansfield ,  Kafai Lai ,  Alan E. Rosenbluth

Inventor： Maharaj Mukherjee ,  James A. Culp ,  Scott M. Mansfield ,  Kafai Lai ,  Alan E. Rosenbluth

IPC: G06F17/50

CPC classification number: G03F1/36 ,  G03F1/70

Abstract: A method is provided for modeling lithographic processes in the design of photomasks for the manufacture of semiconductor integrated circuits, and more particularly for simulating intermediate range flare effects. For a region of influence (ROI) from first ROI1 of about 5λ/NA to distance ROI2 when the point spread function has a slope that is slowly varying according to a predetermined criterion, then mask shapes at least within the distance range from ROI1 to ROI2 are smoothed prior to computing the SOCS convolutions. The method provides a fast method for simulating intermediate range flare effects with sufficient accuracy.

Abstract translation: 提供了一种用于在用于制造半导体集成电路的光掩模的设计中对光刻工艺进行建模的方法，更具体地说，用于模拟中间范围闪光效应。 对于当点扩散函数具有根据预定标准缓慢变化的斜率时，从约5λ/ NA的第一ROI1到距离ROI2的影响区域（ROI），则至少在从ROI1到ROI2的距离范围内的掩模形状 在计算SOCS卷积之前进行平滑处理。 该方法提供了一种用于以足够的精度模拟中等范围闪光效果的快速方法。

公开(公告)号：US20110166686A1

公开(公告)日：2011-07-07

申请号：US12652409

申请日：2010-01-05

Applicant: James A. Culp ,  Jason D. Hibbeler ,  Lars W. Liebmann ,  Tina Wagner

Inventor： James A. Culp ,  Jason D. Hibbeler ,  Lars W. Liebmann ,  Tina Wagner

IPC: G06F17/50 ,  G06G7/66 ,  G06N5/02

CPC classification number: G06F17/5081 ,  G06F2217/12 ,  Y02P90/265

Abstract: A method of automatic calibration of a design for manufacturing (DfM) simulation tool includes providing, as a first input, one or more defined rules for each of one or more semiconductor device levels to be simulated by the tool, and providing, as a second input, a plurality of defined feature size threshold ranges and increments for use in histogram generation of a number of failures with respect to a reference circuit; providing, as a third input, the reference circuit; executing the defined rules for the semiconductor device levels to be simulated, and outputting a fail count for the reference circuit at each defined threshold value, thereby generating histogram data of fail count versus threshold for the reference circuit; and providing, as a fourth input, a defined fail count metric, thereby calibrating the DfM tool for use with respect to a target circuit.

Abstract translation: 一种用于制造设计（DfM）模拟工具的自动校准的方法包括为由工具模拟的一个或多个半导体器件级别中的每一个提供一个或多个限定规则作为第一输入，并且作为第二输入提供第二 输入，多个定义的特征尺寸阈值范围和增量，用于相对于参考电路的多个故障的直方图生成; 提供参考电路作为第三输入; 执行要被模拟的半导体器件电平的限定规则，并在每个定义的阈值处输出参考电路的故障计数，由此产生参考电路的故障计数与阈值的直方图数据; 并且作为第四输入提供定义的故障计数度量，从而校准用于目标电路的DfM工具。

公开(公告)号：US20110068436A1

公开(公告)日：2011-03-24

申请号：US12566043

申请日：2009-09-24

Applicant: James A. Culp ,  John J. Ellis-Monaghan ,  Jeffrey P. Gambino ,  Kirk D. Peterson ,  Jed H. Rankin

Inventor： James A. Culp ,  John J. Ellis-Monaghan ,  Jeffrey P. Gambino ,  Kirk D. Peterson ,  Jed H. Rankin

IPC: H01L21/311 ,  H01L21/3213 ,  H01L23/544

CPC classification number: H01L21/32139 ,  H01L21/0338 ,  H01L21/28123 ,  H01L21/3185

Abstract: Methods and structures for enhancing the homogeneity in a ratio of perimeter to surface area among heterogeneous features in different substrate regions. At least one shape on the substrate includes an added edge effective to reduce a difference in the perimeter-to-surface area ratio between the features in a first substrate region and features in a second substrate region. The improved homogeneity in the perimeter-to-surface area ratio reduces variations in a thickness of a conformal layer deposited across the features in the first and second substrate regions.

Abstract translation: 用于增强不同基底区域中异质特征之间的周长与表面积之比的均匀性的方法和结构。 衬底上的至少一种形状包括有效减少第一衬底区域中的特征与第二衬底区域中的特征之间的周边表面积比的差异的附加边缘。 周边至表面积比的改善的均匀性降低了跨越第一和第二基底区域中的特征沉积的共形层的厚度变化。

公开(公告)号：US07900178B2

公开(公告)日：2011-03-01

申请号：US12039109

申请日：2008-02-28

Applicant: James A. Culp ,  Gregory A. Northrop ,  Ming Yin

Inventor： James A. Culp ,  Gregory A. Northrop ,  Ming Yin

IPC: G06F17/50

CPC classification number: G06F17/5068

Abstract: A method of integrated circuit (IC) design, an IC design system and computer program product therefore, e.g., for L3GO designs. Special case cells are cells that represent specialized, process dependent components and are provided as dual representation cells with an internal view and external view. The external view is high level abstract representation that includes access pins, boundary and possible blocking shapes/layers and optionally, parameterizations. Each external view includes cell to cell spacing rules and connecting and blocking/keepout rules for placement and routing. The internal representation or, internal view includes regular shapes forming cell components and defining cell construction details and are ground rule clean by construction or verified by simulation or hardware.

Abstract translation: 因此，集成电路（IC）设计的方法，IC设计系统和计算机程序产品，例如用于L3GO设计。 特殊情况单元是表示专门的，与过程相关的组件的单元，并且作为具有内部视图和外部视图的双重表示单元提供。 外部视图是高级抽象表示，包括访问引脚，边界和可能的阻塞形状/层以及可选的参数化。 每个外部视图包括单元格到单元格间距规则以及用于布局和布线的连接和阻止/保留规则。 内部表示或内部视图包括形成细胞组分的规则形状，并定义细胞结构细节，并通过构造进行基础规则清洁或通过模拟或硬件验证。