Abstract:
A photoacid-generating compound has the structure wherein m, n, R1, R2, X, Y, and Z− are defined herein. The photoacid-generating compound exhibits strong absorption and chemical sensitivity to extreme ultraviolet radiation, while also absorbing longer wavelengths with desirably reduced chemical sensitivity. Also described are a polymer incorporating the residue of a polymerizable version of the photoacid-generating compound, a photoresist composition that includes the photoacid-generating compound, the polymer, or a combination thereof, and a method of forming a photoresist relief image using the photoresist composition.
Abstract:
A photoacid-generating compound has the structure wherein m, n, R1, R2, X, Y, and Z− are defined herein. The photoacid-generating compound exhibits strong absorption and chemical sensitivity to extreme ultraviolet radiation, while also absorbing longer wavelengths with desirably reduced chemical sensitivity. Also described are a polymer incorporating the residue of a polymerizable version of the photoacid-generating compound, a photoresist composition that includes the photoacid-generating compound, the polymer, or a combination thereof, and a method of forming a photoresist relief image using the photoresist composition.
Abstract:
A photoacid-generating compound has the structure where R1, R2, R3, R4, Q, and X are defined herein. The photoacid-generating compound can be used as a component of a photoresist composition, or as a monomer incorporated into a polymer useful in a photoresist composition. The photoacid-generating compound provides a desired balance of solubility and line width roughness.
Abstract:
New photoacid generator compounds (“PAGs”) are provided that comprise a cholate moiety and photoresist compositions that comprise such PAG compounds.
Abstract:
Polymeric reaction products of certain substituted tetraarylmethane monomers are useful as underlayers in semiconductor manufacturing processes.
Abstract:
A photoacid generator has the formula (I): wherein R1, R2, R3, L1, L2, L3 X, Z+, a, b, c, d, p, q, and r, are defined herein. A photoresist comprises the photoacid generator, and a coated article comprises the photoresist. The photoresist can be used to form an electronic device.
Abstract:
A photoacid generator includes those of formula (I): wherein each Ra in formula 1 is independently H, F, a C1-10 nonfluorinated organic group, C1-10 fluorinated organic group, or a combination comprising at least one of the foregoing, provided at least one Ra is F or a C1-10 fluorinated organic group, the C1-10 fluorinated and nonfluorinated organic groups each optionally comprising O, S, N, or a combination comprising at least one of the foregoing heteroatoms; L1 is a linking group comprising a heteroatom comprising O, S, N, F, or a combination comprising at least one of the foregoing; G+ is an onium salt of the formula (II): wherein in formula (II), X is S or I, each R0 is independently C1-30 alkyl group; a polycyclic or monocyclic C3-30 cycloalkyl group; a polycyclic or monocyclic C4-30 aryl group; or a combination comprising at least one of the foregoing, provided at least one R0 is substituted where each R0 is a C6 monocyclic aryl group, and wherein when X is I, a is 2, and where X is S, a is 3, p is 0 or 1, and q is an integer of from 1 to 10.