公开(公告)号：US20220399228A1

公开(公告)日：2022-12-15

申请号：US17545468

申请日：2021-12-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunwook SHIN ,  Minsu SEOL ,  Sangwon KIM ,  Kyung-Eun BYUN ,  Hyeonjin SHIN

IPC: H01L21/768 ,  H01L23/532

Abstract: Disclosed are an interconnect structure, an electronic device including the same, and a method of manufacturing the interconnect structure. The interconnect structure includes a dielectric layer; a conductive interconnect on the dielectric layer; and a graphene cap layer on the conductive interconnect. The graphene cap layer contains graphene quantum dots, has a carbon content of 80 at % or more, and has an oxygen content of 15 at % or less.

公开(公告)号：US20220367745A1

公开(公告)日：2022-11-17

申请号：US17857466

申请日：2022-07-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyun JO ,  Jaeho LEE ,  Haeryong KIM ,  Hyeonjin SHIN

IPC: H01L31/107 ,  H01L31/02 ,  H01L31/0224 ,  H01L31/0352 ,  H01S5/0687 ,  G01S7/481 ,  H01L31/028 ,  H01L31/032 ,  H01L27/146 ,  H01L31/101 ,  H01L27/30 ,  G01S17/931

Abstract: A photodetector having a small form factor and having high detection efficiency with respect to both visible light and infrared rays may include a first electrode, a collector layer on the first electrode, a tunnel barrier layer on the collector layer, a graphene layer on the tunnel barrier layer, an emitter layer on the graphene layer, and a second electrode on the emitter layer. The photodetector may be included in an image sensor. An image sensor may include a substrate, an insulating layer on the substrate, and a plurality of photodetectors on the insulating layer. The photodetectors may be aligned with each other in a direction extending parallel or perpendicular to a top surface of the insulating layer. The photodetector may be included in a LiDAR system.

公开(公告)号：US20220246718A1

公开(公告)日：2022-08-04

申请号：US17465213

申请日：2021-09-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yeonchoo CHO ,  Kyung-Eun BYUN ,  Keunwook SHIN ,  Hyeonjin SHIN

IPC: H01L29/04 ,  H01L29/49 ,  H01L23/522 ,  H01L29/16 ,  H01L29/161

Abstract: A semiconductor device is provided. The semiconductor device includes a metal layer, a semiconductor layer in electrical contact with the metal layer, a two-dimensional (2D) material layer disposed between the metal layer and the semiconductor layer and having a 2D crystal structure, and a metal compound layer disposed between the 2D material layer and the semiconductor layer.

公开(公告)号：US20220181151A1

公开(公告)日：2022-06-09

申请号：US17459538

申请日：2021-08-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonjin SHIN ,  Taejin CHOI

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/308

Abstract: Provided are a hard mask including an amorphous boron nitride film and a method of fabricating the hard mask, and a patterning method using the hard mask. The hard mask is provided on a substrate and used for a process of patterning the substrate, and the hard mask includes an amorphous boron nitride film.

公开(公告)号：US20220093746A1

公开(公告)日：2022-03-24

申请号：US17541871

申请日：2021-12-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho LEE ,  Hyeonjin SHIN ,  Dongwook LEE ,  Seongjun PARK ,  Kiyoung LEE ,  Eunkyu LEE ,  Sanghyun JO ,  Jinseong HEO

IPC: H01L29/16 ,  H01L31/0352 ,  H01L31/09 ,  H01L31/028 ,  H01L31/101 ,  H01L51/05 ,  H01L51/00 ,  H01L27/144 ,  H01L27/146 ,  H01L27/15 ,  H01L29/12

Abstract: Provided are an optical sensor including graphene quantum dots and an image sensor including an optical sensing layer. The optical sensor may include a graphene quantum dot layer that includes a plurality of first graphene quantum dots bonded to a first functional group and a plurality of second graphene quantum dots bonded to a second functional group that is different from the first functional group. An absorption wavelength band of the optical sensor may be adjusted based on types of functional groups bonded to the respective graphene quantum dots and/or sizes of the graphene quantum dots.

公开(公告)号：US20210226010A1

公开(公告)日：2021-07-22

申请号：US17111965

申请日：2020-12-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minhyun LEE ,  Minsu SEOL ,  Hyeonjin SHIN

IPC: H01L29/10 ,  H01L29/36 ,  H01L29/423

Abstract: A transistor including at least one two-dimensional (2D) channel is disclosed. A transistor according to some example embodiments includes first to third electrodes separated from each other, and a channel layer that is in contact with the first and second electrodes, parallel to the third electrode, and includes at least one 2D channel. The at least one 2D channel includes at least two regions having different doping concentrations. A transistor according to some example embodiments includes: first to third electrodes separated from each other; a 2D channel layer that is in contact with the first and second electrodes and parallel to the third electrode; a first doping layer disposed under the 2D channel layer corresponding to the first electrode; and a second doping layer disposed under the 2D channel layer corresponding to the second electrode, wherein the first and second doping layers contact the 2D channel layer.

公开(公告)号：US20210223683A1

公开(公告)日：2021-07-22

申请号：US17223568

申请日：2021-04-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minhyun LEE ,  Hyeonjin SHIN ,  Seongjun JEONG ,  Seongjun PARK

IPC: G03F1/62 ,  G03F1/64

Abstract: A pellicle configured to protecting a photomask from external contaminants may include a metal catalyst layer and a pellicle membrane including a 2D material on the metal catalyst layer, wherein the metal catalyst layer supports edge regions of the pellicle membrane and does not support a central region of the pellicle membrane. The metal catalyst layer may be on a substrate, such that the substrate and the metal catalyst layer collectively support the edge region of the pellicle membrane and do not support the central region of the pellicle membrane. The pellicle may be formed based on growing the 2D material on the metal catalyst layer and etching an inner region of the metal catalyst layer that supports the central region of the formed pellicle membrane.

公开(公告)号：US20210206643A1

公开(公告)日：2021-07-08

申请号：US17138194

申请日：2020-12-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changseok LEE ,  Changhyun KIM ,  Kyung-Eun BYUN ,  Keunwook SHIN ,  Hyeonjin SHIN ,  Eunkyu LEE

IPC: C01B32/186 ,  C01B32/194 ,  C23C16/02 ,  C23C16/04 ,  C23C16/26 ,  C23C16/513

Abstract: Provided is a method of selectively growing graphene. The method includes forming an ion implantation region and an ion non-implantation region by implanting ions locally into a substrate; and selectively growing graphene in the ion implantation region or the ion non-implantation region.

公开(公告)号：US20210167183A1

公开(公告)日：2021-06-03

申请号：US17154354

申请日：2021-01-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong HEO ,  Yunseong LEE ,  Sanghyun JO ,  Keunwook SHIN ,  Hyeonjin SHIN

IPC: H01L29/51 ,  H01L21/02

Abstract: Provided are electronic devices and methods of manufacturing the same. An electronic device may include a substrate, a gate electrode on the substrate, a ferroelectric layer between the substrate and the gate electrode, and a carbon layer between the substrate and the ferroelectric layer. The carbon layer may have an sp2 bonding structure.

公开(公告)号：US20190161351A1

公开(公告)日：2019-05-30

申请号：US16183146

申请日：2018-11-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunjae SONG ,  Keunwook SHIN ,  Hyeonjin SHIN ,  Changseok LEE ,  Changhyun KIM ,  Kyungeun BYUN ,  Seungwon LEE ,  Eunkyu LEE

IPC: C01B32/186 ,  H01L23/532 ,  H01L21/285 ,  H01L21/768 ,  C23C16/26 ,  C23C16/50

Abstract: Provided are nanocrystalline graphene and a method of forming the nanocrystalline graphene through a plasma enhanced chemical vapor deposition process. The nanocrystalline graphene may have a ratio of carbon having an sp2 bonding structure to total carbon within the range of about 50% to 99%. In addition, the nanocrystalline graphene may include crystals having a size of about 0.5 nm to about 100 nm.