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公开(公告)号：US11677025B2
公开(公告)日：2023-06-13
申请号：US17513050
申请日：2021-10-28
发明人： Yunseong Lee , Jinseong Heo , Sangwook Kim , Sanghyun Jo
IPC分类号： H01L29/78 , H01L29/51 , H01L29/423 , H01L21/02 , H01L29/66 , H01L29/08 , H01L21/28 , H10B51/30 , H01L27/1159
CPC分类号： H01L29/78391 , H01L21/022 , H01L21/0228 , H01L21/02175 , H01L29/0847 , H01L29/40111 , H01L29/42364 , H01L29/513 , H01L29/516 , H01L29/517 , H01L29/6684 , H01L21/02181 , H01L21/02189 , H01L27/1159
摘要： An electronic device includes a ferroelectric layer arranged on a channel region and a gate electrode arranged on the ferroelectric layer. The ferroelectric layer includes a plurality of first oxide monolayers and a second oxide monolayers that is arranged between the substrate and the gate electrode and include a material different from a material of the first oxide monolayers. The first oxide monolayers include oxide monolayers that are alternately formed and include materials different from one another.
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公开(公告)号：US11600712B2
公开(公告)日：2023-03-07
申请号：US16691772
申请日：2019-11-22
发明人： Sanghyun Jo , Sangwook Kim , Yunseong Lee , Jinseong Heo
摘要： A ferroelectric structure includes a first polarization enhancement film on a ferroelectric film, wherein the ferroelectric film has a first net polarization in a first direction oriented from the ferroelectric film toward the first polarization enhancement film. The first polarization enhancement film has a second net polarization in a second direction crossing the first direction.
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公开(公告)号：US11538918B2
公开(公告)日：2022-12-27
申请号：US17154354
申请日：2021-01-21
发明人： Jinseong Heo , Yunseong Lee , Sanghyun Jo , Keunwook Shin , Hyeonjin Shin
摘要： Provided are electronic devices and methods of manufacturing the same. An electronic device may include a substrate, a gate electrode on the substrate, a ferroelectric layer between the substrate and the gate electrode, and a carbon layer between the substrate and the ferroelectric layer. The carbon layer may have an sp2 bonding structure.
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54.发明授权公开(公告)号：US11367799B2
公开(公告)日：2022-06-21
申请号：US16740900
申请日：2020-01-13
发明人： Kiyoung Lee , Jinseong Heo , Jaeho Lee , Haeryong Kim , Seongjun Park , Hyeonjin Shin , Eunkyu Lee , Sanghyun Jo
IPC分类号： H01L31/0216 , H01L31/0304 , G01N21/59 , H01L31/0224 , H01L31/028 , H01L31/0352 , H01L31/18
摘要： A broadband multi-purpose optical device includes a semiconductor layer having a light absorption characteristic, a first active layer having a light absorption band different from a light absorption band of the semiconductor layer, a first two-dimensional (2D) material layer adjacent to the first active layer, and a first interfacial layer configured to control a pinning potential of the semiconductor layer and the first active layer. The broadband multi-purpose optical device may further include at least one second active layer, and may include a tandem structure that further includes at least one second 2D material layer. The first active layer and the second active layer may have different light absorption bands. The broadband multi-purpose optical device may further include a second interfacial layer adjacent to the first 2D material layer.
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公开(公告)号：US11239274B2
公开(公告)日：2022-02-01
申请号：US15800229
申请日：2017-11-01
发明人： Sanghyun Jo , Jaeho Lee , Eunkyu Lee , Seongjun Park , Kiyoung Lee , Jinseong Heo
IPC分类号： H01L27/146 , H01L31/074 , H01L31/0264 , B82Y15/00
摘要： Example embodiments relate to an image sensor configured to achieve a high photoelectric conversion efficiency and a low dark current. The image sensor includes first and second electrodes, a plurality of photodetection layers provided between the first and second electrodes, and an interlayer provided between the photodetection layers. The photodetection layers convert incident light into an electrical signal and include a semiconductor material. The interlayer includes a metallic or semi metallic material having anisotropy in electrical conductivity.
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公开(公告)号：US11222953B2
公开(公告)日：2022-01-11
申请号：US16662872
申请日：2019-10-24
发明人： Jaeho Lee , Hyeonjin Shin , Dongwook Lee , Seongjun Park , Kiyoung Lee , Eunkyu Lee , Sanghyun Jo , Jinseong Heo
IPC分类号： H01L31/0352 , H01L29/16 , H01L31/09 , H01L31/028 , H01L31/101 , H01L51/05 , H01L51/00 , H01L27/144 , H01L27/146 , H01L27/15 , H01L29/12 , H01L27/30
摘要： Provided are an optical sensor including graphene quantum dots and an image sensor including an optical sensing layer. The optical sensor may include a graphene quantum dot layer that includes a plurality of first graphene quantum dots bonded to a first functional group and a plurality of second graphene quantum dots bonded to a second functional group that is different from the first functional group. An absorption wavelength band of the optical sensor may be adjusted based on types of functional groups bonded to the respective graphene quantum dots and/or sizes of the graphene quantum dots.
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公开(公告)号：US10937885B2
公开(公告)日：2021-03-02
申请号：US16259038
申请日：2019-01-28
发明人： Jinseong Heo , Yunseong Lee , Sanghyun Jo , Keunwook Shin , Hyeonjin Shin
摘要： Provided are electronic devices and methods of manufacturing the same. An electronic device may include a substrate, a gate electrode on the substrate, a ferroelectric layer between the substrate and the gate electrode, and a carbon layer between the substrate and the ferroelectric layer. The carbon layer may have an sp2 bonding structure.
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公开(公告)号：US10741389B2
公开(公告)日：2020-08-11
申请号：US16012938
申请日：2018-06-20
发明人： Haeryong Kim , Hyeonjin Shin , Jaeho Lee , Sanghyun Jo
IPC分类号： H01L21/20 , H01L21/02 , H01L29/66 , H01L29/786 , H01L29/778 , H01L29/24
摘要： A method of growing a two-dimensional transition metal dichalcogenide (TMD) thin film and a method of manufacturing a device including the two-dimensional TMD thin film are provided. The method of growing the two-dimensional TMD thin film may include a precursor supply operation and an evacuation operation, which are periodically and repeatedly performed in a reaction chamber provided with a substrate for thin film growth. The precursor supply operation may include supplying two or more kinds of precursors of a TMD material to the reaction chamber. The evacuation operation may include evacuating the two or more kinds of precursors and by-products generated therefrom from the reaction chamber.
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