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    ELECTRICALLY CONDUCTIVE THIN FILMS
    51.
    发明申请
    ELECTRICALLY CONDUCTIVE THIN FILMS 有权
    电导电薄膜

    公开(公告)号：US20160141067A1

    公开(公告)日：2016-05-19

    申请号：US14940223

    申请日：2015-11-13

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kimoon LEE ,  Sang Il KIM ,  Se Yun KIM ,  Sung Woo HWANG ,  Woojin LEE ,  Hee Jung PARK ,  Yoon Chul SON ,  Hyosug LEE ,  Doh Won JUNG ,  Youngjin CHO ,  Jae-Young CHOI

    IPC: H01B1/06

    CPC classification number: H01B1/02 ,  C01B19/002 ,  C01B19/007 ,  C01P2002/20 ,  C01P2002/30 ,  C01P2002/90 ,  C30B7/00 ,  C30B29/46 ,  C30B29/60 ,  C30B29/605 ,  C30B29/607 ,  H01B1/06 ,  H01L21/02417 ,  H01L21/02573 ,  H01L21/02609

    Abstract: An electrically conductive thin film including: a material including a compound represented by Chemical Formula 1 and having a layered crystal structure, MemAa   Chemical Formula 1 wherein Me is Al, Ga, In, Si, Ge, Sn, A is S, Se, Te, or a combination thereof, and m and a each are independently a number selected so that the compound of Chemical Formula 1 is neutral; and a dopant disposed in the compound of Chemical Formula 1, wherein the dopant is a metal dopant that is different from Me and has an oxidation state which is greater than an oxidation state of Me, a non-metal dopant having a greater number of valence electrons than a number of valence electrons of A in Chemical Formula 1, or a combination thereof, and wherein the compound of Chemical Formula 1 includes a chemical bond which includes a valence electron of an s orbital of Me.

    Abstract translation: 一种导电薄膜，包括：包含由化学式1表示并具有层状晶体结构的化合物的材料，其中Me为Al，Ga，In，Si，Ge，Sn，A的MemAa化学式1为S，Se，Te ，或它们的组合，m和a各自独立地选择为使化学式1的化合物为中性的数字; 以及配置在化学式1的化合物中的掺杂剂，其中所述掺杂剂是与Me不同的金属掺杂剂，并且具有大于Me的氧化态的氧化态，具有更大数量化合价的非金属掺杂剂 电子与化学式1中A的多价价电子或其组合，其中化学式1的化合物包括包含Me轨道的价电子的化学键。

    EMBEDDED MEMORY DEVICE AND MEMORY CONTROLLER INCLUDING THE SAME
    54.
    发明申请
    EMBEDDED MEMORY DEVICE AND MEMORY CONTROLLER INCLUDING THE SAME 有权
    嵌入式存储器件和存储器控制器，包括它们

    公开(公告)号：US20140369137A1

    公开(公告)日：2014-12-18

    申请号：US14231856

    申请日：2014-04-01

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Younggeun LEE ,  Youngjin CHO ,  Hyun-Wook LEE ,  Junghyo WOO

    IPC: G11C17/16 ,  G11C17/00

    CPC classification number: G11C17/16 ,  G06F12/06 ,  G06F13/1668 ,  G06F13/1694 ,  G11C11/005 ,  G11C17/00 ,  G11C29/822 ,  G11C29/846

    Abstract: An embedded memory device includes a mask ROM including a plurality of mask ROM cells and an address decoder configured to decode an address of the plurality of mask ROM cells; and an e-fuse memory configured to replace a part of data stored in the mask ROM with replacement data, the e-fuse memory including, a plurality of e-fuse memory cells configured to store the replacement data, and an e-fuse address selector configured to decode an address of the plurality of e-fuse memory cells and to selectively cause data of one or more of the plurality of e-fuse memory cells to be output based on the decoding result.

    Abstract translation: 一种嵌入式存储器件包括：掩模ROM，包括多个掩模ROM单元;以及地址解码器，被配置为对多个掩模ROM单元的地址进行解码; 以及电子熔丝存储器，其被配置为用替换数据替换存储在掩模ROM中的一部分数据，所述电子熔丝存储器包括被配置为存储替换数据的多个电子熔丝存储器单元和电子熔丝地址 所述选择器被配置为解码所述多个电子熔丝存储单元的地址，并且基于所述解码结果选择性地引起所述多个电子熔丝存储器单元中的一个或多个的数据的输出。

    VARIABLE RESISTANCE MEMORY DEVICE
    56.
    发明公开
    VARIABLE RESISTANCE MEMORY DEVICE 审中-公开

    公开(公告)号：US20230337555A1

    公开(公告)日：2023-10-19

    申请号：US18338707

    申请日：2023-06-21

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Seyun KIM ,  Jinhong KIM ,  Soichiro MIZUSAKI ,  Jungho YOON ,  Youngjin CHO

    IPC: H01L47/00

    CPC classification number: H10N70/231 ,  H10N70/8833 ,  H10B63/80

    Abstract: A variable resistance memory device includes a variable resistance layer, a first conductive element, and a second conductive element. The variable resistance layer includes a first layer including a first material and a second layer on the first layer and the second layer including a second material. The second material has a different valence than a valence of the first material. The first conductive element and the second conductive element are on the variable resistance layer and separated from each other to form an electric current path in the variable resistance layer in a direction perpendicular to a direction in which the first layer and the second layer are stacked.

    WASHING MACHINE AND CLOTHES TREATING APPARATUS
    57.
    发明公开
    WASHING MACHINE AND CLOTHES TREATING APPARATUS 审中-公开

    公开(公告)号：US20230212809A1

    公开(公告)日：2023-07-06

    申请号：US17960552

    申请日：2022-10-05

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Youngjin CHO ,  Jaeryong PARK ,  Kanghyun LEE ,  Dongpil SEO

    IPC: D06F39/10 ,  D06F39/08 ,  D06F23/02

    CPC classification number: D06F39/10 ,  D06F39/085 ,  D06F23/02

    Abstract: A washing machine includes a cabinet, a tub arranged inside the cabinet, and a washing water treatment apparatus connectable to the tub and configured to circulate water introduced in the tub and discharge the water to an outside of the cabinet. The washing water treatment apparatus includes a case forming an exterior of the washing water treatment apparatus, a filter mountable on an inside of the case and detachable from the inside of the case, a filter blade rotatable inside the filter, a filter driving source to generate power to rotate the filter blade, a drive gear configured to receive the power from the filter driving source and rotate along a first rotation axis, and a filter gear configured to rotate along a second rotation axis at a predetermined angle with respect to the first rotation axis and rotate the filter blade according to a rotation of the drive gear.

    VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRING
    60.
    发明申请
    VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRING 有权

    公开(公告)号：US20210217473A1

    公开(公告)日：2021-07-15

    申请号：US17146999

    申请日：2021-01-12

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Youngjin CHO ,  Jungho YOON ,  Seyun KIM ,  Jinhong KIM ,  Soichiro MIZUSAKI

    IPC: G11C13/00 ,  G06N3/04 ,  H01L45/00 ,  H01L27/24

    Abstract: A vertical nonvolatile memory device including a memory cell string using a resistance change material is disclosed. Each memory cell string of the nonvolatile memory device includes a semiconductor layer extending in a first direction and having a first surface opposite a second surface, a plurality of gates and a plurality of insulators alternately arranged in the first direction and extending in a second direction perpendicular to the first direction, a gate insulating layer extending in the first direction between the plurality of gates and the semiconductor layer and between the plurality of insulators and the semiconductor layer, and a dielectric film extending in the first direction on the surface of the semiconductor layer and having a plurality of movable oxygen vacancies distributed therein.

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