公开(公告)号：US20090277874A1

公开(公告)日：2009-11-12

申请号：US12433465

申请日：2009-04-30

申请人： Ying Rui ,  Imad Yousif ,  Daniel Hoffman

发明人： Ying Rui ,  Imad Yousif ,  Daniel Hoffman

IPC分类号： B44C1/22 ,  C23F1/08

CPC分类号： H01J37/3266 ,  G03F7/427 ,  H01J37/32357 ,  H01J37/32495 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/02087 ,  H01L21/0209 ,  H01L21/31138 ,  H01L21/67207

摘要： A method and an apparatus for removing polymer from a substrate are provided. In one embodiment, an apparatus utilized to remove polymer from a substrate includes a processing chamber having a chamber wall and a chamber lid defining a process volume, a substrate support assembly disposed in the processing chamber, a remote plasma source coupled to the processing chamber through an outlet port formed through the processing chamber, the outlet port having an opening pointing toward an periphery region of a substrate disposed on the substrate support assembly, and a substrate supporting surface of the substrate support assembly that substantially electrically floats the substrate disposed thereon relative to the substrate support assembly.

摘要翻译： 提供了从基板上除去聚合物的方法和装置。 在一个实施方案中，用于从基材中除去聚合物的装置包括处理室，其具有室壁和限定处理体积的室盖，设置在处理室中的基板支撑组件，远程等离子体源，其通过 通过处理室形成的出口，所述出口具有指向设置在所述基板支撑组件上的基板的周边区域的开口，以及所述基板支撑组件的基板支撑表面，所述基板支撑表面基本上电漂浮相对于 基板支撑组件。

公开(公告)号：US20090249121A1

公开(公告)日：2009-10-01

申请号：US12395235

申请日：2009-02-27

申请人： Nathan John Walter Kube ,  Daniel Hoffman ,  Kevin Yoo

发明人： Nathan John Walter Kube ,  Daniel Hoffman ,  Kevin Yoo

IPC分类号： G06F11/263

CPC分类号： G06F11/263 ,  G06F11/3684

摘要： The present disclosure generally relates to the testing of a system that includes software or hardware components. In some embodiments, a testing framework generates a set of test cases for a system under test using a grammar. Each test case may perform an action, such as provide an input to the system under test, and result in an output from the system under test. The inputs and outputs are then compared to the expected results to determine whether the system under test is performing correctly. Prior to generating the set of test cases from the grammar, the testing framework processes the grammar to identify attributes of the test cases to be derived from the grammar and facilitates the modification of the grammar.

摘要翻译： 本公开通常涉及包括软件或硬件组件的系统的测试。 在一些实施例中，测试框架使用语法为被测系统生成一组测试用例。 每个测试用例可以执行一个操作，例如向被测系统提供输入，并产生被测系统的输出。 然后将输入和输出与预期结果进行比较，以确定被测系统是否正确执行。 在从语法生成一组测试用例之前，测试框架处理语法，以识别从语法导出的测试用例的属性，并有助于语法的修改。

公开(公告)号：US20080023143A1

公开(公告)日：2008-01-31

申请号：US11881801

申请日：2007-07-27

申请人： Daniel Hoffman ,  Matthew Miller ,  Jang Yang ,  Heeyeop Chae ,  Michael Barnes ,  Tetsuya Ishikawa ,  Yan Ye

发明人： Daniel Hoffman ,  Matthew Miller ,  Jang Yang ,  Heeyeop Chae ,  Michael Barnes ,  Tetsuya Ishikawa ,  Yan Ye

IPC分类号： H01L21/3065 ,  H01L21/285

CPC分类号： H01J37/32091 ,  H01J37/3244 ,  H01J37/32623 ,  H01J37/3266

摘要： A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a processing region between the workpiece support and the ceiling. Process gas inlets furnish a process gas into the chamber. A plasma source power electrode is connected to an RF power generator for capacitively coupling plasma source power into the chamber for maintaining a plasma within the chamber. The reactor further includes at least a first overhead solenoidal electromagnet adjacent the ceiling, the overhead solenoidal electromagnet, the ceiling, the side wall and the workpiece support being located along a common axis of symmetry.

摘要翻译： 等离子体反应器包括真空外壳，其包括限定真空室的侧壁和顶板，以及腔室内的工件支撑件，并面向天花板以支撑平面工件，工件支撑件和天花板一起限定了工件之间的加工区域 支持和天花板。 工艺气体入口将工艺气体提供到腔室中。 等离子体源功率电极连接到RF功率发生器，用于将等离子体源功率电容耦合到腔室中，以在腔室内维持等离子体。 反应器还包括至少第一架空螺线管电磁体，靠近天花板，架空螺线管电磁体，天花板，侧壁和工件支撑件沿着共同的对称轴线定位。

公开(公告)号：US20070254483A1

公开(公告)日：2007-11-01

申请号：US11413900

申请日：2006-04-28

申请人： Kallol Bera ,  Xiaoye Zhao ,  Kenny Doan ,  Ezra Gold ,  Paul Brillhart ,  Bruno Geoffrion ,  Bryan Pu ,  Daniel Hoffman

发明人： Kallol Bera ,  Xiaoye Zhao ,  Kenny Doan ,  Ezra Gold ,  Paul Brillhart ,  Bruno Geoffrion ,  Bryan Pu ,  Daniel Hoffman

IPC分类号： C23F1/00 ,  H01L21/302

CPC分类号： H01L21/31116 ,  H01J37/3244 ,  H01J37/32449 ,  H01J2237/334 ,  H01L21/67069

摘要： A plasma etch process for etching high aspect ratio openings in a dielectric film on a workpiece is carried out in a reactor having a ceiling electrode overlying the workpiece and an electrostatic chuck supporting the workpiece. The process includes injecting a polymerizing etch process gas through at least one of plural concentric gas injection zones of the ceiling electrode and injecting an inert diluent gas through at least a selected one of the plural gas injection zones of the ceiling electrode and apportioning respective flow rates of the diluent gas through respective ones of the gas injection zones in accordance with the distribution among corresponding concentric zones of the workpiece of etch profile tapering. The process further includes evacuating gas from the reactor through a pumping annulus surrounding an edge of the workpiece, and etching the high aspect ratio openings in the dielectric film with etch species derived from the etch process gas while depositing a polymer derived from the etch process gas onto the workpiece, by generating a plasma in the reactor.

摘要翻译： 用于蚀刻工件上的电介质膜中的高纵横比开口的等离子体蚀刻工艺在具有覆盖工件的顶部电极的反应器和支撑工件的静电卡盘上进行。 该方法包括将聚合蚀刻工艺气体注入到天花板电极的多个同心气体注入区域中的至少一个中，并且通过天花板电极的多个气体注入区域中的至少一个选择惰性稀释气体并分配各自的流量 根据蚀刻轮廓渐缩的工件的相应同心区域之间的分布，通过相应的气体注入区域的稀释气体。 该方法还包括通过围绕工件边缘的泵送环空将气体从反应器排出，以及用蚀刻工艺气体衍生的蚀刻物质蚀刻电介质膜中的高纵横比开口，同时沉积衍生自蚀刻工艺气体的聚合物 通过在反应器中产生等离子体而在工件上。

公开(公告)号：US20070251918A1

公开(公告)日：2007-11-01

申请号：US11414017

申请日：2006-04-28

申请人： Kallol Bera ,  Xiaoye Zhao ,  Kenny Doan ,  Ezra Gold ,  Paul Brillhart ,  Bruno Geoffrion ,  Bryan Pu ,  Daniel Hoffman

发明人： Kallol Bera ,  Xiaoye Zhao ,  Kenny Doan ,  Ezra Gold ,  Paul Brillhart ,  Bruno Geoffrion ,  Bryan Pu ,  Daniel Hoffman

IPC分类号： C03C25/68 ,  C23F1/00

CPC分类号： H01L21/31116 ,  H01J37/321 ,  H01J37/32449

摘要： A plasma etch process for etching a workpiece is carried out in a plasma reactor having a ceiling electrode overlying the process region with plural concentric gas injection zones. The process includes injecting process gases with different compositions of chemical species through different ones of the gas injection zones to establish a distribution of chemical species among the plural gas injection zones. The process gases include fluorine-rich polymerizing etch gases that promote a high etch rate, carbon-rich polymerizing etch gases that promote a high polymer deposition rate, polymer management gases (e.g., oxygen or nitrogen) that retard polymer deposition rate and an inert diluent gas that reduces etch profile tapering. The method further includes distributing the processes gases among the plural gas injection zone so that (a) the fluorine-rich etch process gases have the highest flow rate over zones of the workpiece tending to have the lowest etch rate, (b) the carbon-rich etch process gases have the highest flow rate over zones of the workpiece tending to have the highest etch rate, (c) the polymer management gases have the highest flow rate over zones of the workpiece tending to have the highest tendency for etch stop, (d) the inert diluent gas has the highest flow rate over zones of the workpiece tending to have the greatest etch profile tapering.

摘要翻译： 用于蚀刻工件的等离子体蚀刻工艺在具有覆盖具有多个同心气体注入区的工艺区域的顶板电极的等离子体反应器中进行。 该方法包括通过不同的气体注入区注入具有不同组成的化学物质的工艺气体，以建立多个气体注入区域之间的化学物质分布。 工艺气体包括富含氟的聚合蚀刻气体，其促进高蚀刻速率，促进高聚合物沉积速率的富碳聚合蚀刻气体，阻止聚合物沉积速率的聚合物管理气体（例如氧气或氮气）和惰性稀释剂 减少蚀刻轮廓渐缩的气体。 该方法还包括在多个气体注入区域之间分配工艺气体，使得（a）富氟蚀刻工艺气体在工件区域上具有最高的流速，倾向于具有最低的蚀刻速率，（b）碳 - 丰富的蚀刻工艺气体在工件区域上具有最高的流速，倾向于具有最高的蚀刻速率，（c）聚合物管理气体在工件区域上具有最高的流速，倾向于具有蚀刻停止的最高趋势（ d）惰性稀释气体在工件区域上具有最高的流速，倾向于具有最大的蚀刻轮廓渐缩。

公开(公告)号：US20070091540A1

公开(公告)日：2007-04-26

申请号：US11409184

申请日：2006-04-21

申请人： Paul Brillhart ,  Richard Fovell ,  Douglas Buchberger ,  Douglas Burns ,  Kallol Bera ,  Daniel Hoffman

发明人： Paul Brillhart ,  Richard Fovell ,  Douglas Buchberger ,  Douglas Burns ,  Kallol Bera ,  Daniel Hoffman

IPC分类号： H01T23/00

CPC分类号： H01L21/67248 ,  F25B49/02 ,  F25B2400/0401 ,  F25B2400/0403 ,  F25B2400/0411 ,  F25B2700/21174 ,  F25B2700/21175 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32724 ,  H01J2237/2001 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831 ,  H05H2001/4682

摘要： A method of processing a workpiece in a plasma reactor having an electrostatic chuck for supporting the workpiece within a reactor chamber, the method including circulating a coolant through a refrigeration loop that includes inner and outer zone evaporators inside respective inner and outer zones of the electrostatic chuck, while pressurizing inner and outer zones of a workpiece-to-chuck interface with a thermally conductive gas, and sensing conditions in the chamber including inner and outer zone temperatures near the workpiece. The method further includes obtaining the next scheduled change in RF heat load on the workpiece and using thermal modeling to estimate respective changes in thermal conditions of the coolant in the inner and outer zone evaporators, respectively, that would hold temperatures measured in the inner and outer electrostatic chuck zones, respectively, nearly constant by compensating for the next scheduled change in RF heat load, and making the respective changes in thermal conditions of the coolant in inner and outer zone evaporators prior to the time of the next scheduled change by a head start related to the thermal propagation delay through the electrostatic chuck.

摘要翻译： 一种在等离子体反应器中处理工件的方法，所述等离子体反应器具有用于在反应室内支撑工件的静电卡盘，所述方法包括使冷却剂循环通过制冷回路，所述制冷回路在静电吸盘的内部和外部区域内包括内部和外部区域蒸发器 同时用导热气体对工件 - 卡盘界面的内部和外部区域加压，以及感测室中包括工件附近的内部和外部区域温度的条件。 该方法还包括获得工件上的RF热负荷的下一个预定的改变，并且使用热模型来分别估计在内部和外部区域蒸发器中的冷却剂的热条件的各自变化，其将保持在内部和外部测量的温度 通过补偿下一个预定的RF热负荷变化，分别使静电吸盘区域几乎恒定，并且在下一次预定的改变时间之前通过头部开始使得内部和外部区域蒸发器中的冷却剂的热条件的各自变化 与通过静电卡盘的热传播延迟有关。

公开(公告)号：US20070091538A1

公开(公告)日：2007-04-26

申请号：US11408567

申请日：2006-04-21

申请人： Douglas Buchberger ,  Paul Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas Burns ,  Kallol Bera ,  Daniel Hoffman

发明人： Douglas Buchberger ,  Paul Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas Burns ,  Kallol Bera ,  Daniel Hoffman

IPC分类号： H01T23/00

CPC分类号： H01L21/67248 ,  F25B49/02 ,  F25B2400/0401 ,  F25B2400/0403 ,  F25B2400/0411 ,  F25B2700/21174 ,  F25B2700/21175 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32724 ,  H01J2237/2001 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831 ,  H05H2001/4682

摘要： A plasma reactor with a reactor chamber and an electrostatic chuck having a surface for holding a workpiece inside the chamber includes a backside gas pressure source coupled to the electrostatic chuck for applying a thermally conductive gas under a selected pressure into a workpiece-surface interface formed whenever a workpiece is held on the surface, and an evaporator inside the electrostatic chuck and a refrigeration loop having an expansion valve for controlling flow of coolant through the evaporator. The reactor further includes a temperature sensor in the electrostatic chuck, a thermal model capable of simulating heat transfer between the evaporator and the surface based upon measurements from the temperature sensor and an agile control processor coupled to the thermal model and governing the backside gas pressure source in response to predictions from the model of changes in the selected pressure that would bring the temperature measured by the sensor closer to a desired temperature.

摘要翻译： 具有反应室和具有用于将工件保持在腔室内的表面的静电卡盘的等离子体反应器包括耦合到静电卡盘的背侧气体压力源，用于将选定压力下的导热气体施加到每次形成的工件表面界面中 工件被保持在表面上，并且蒸发器位于静电卡盘内部，制冷回路具有用于控制通过蒸发器的冷却剂流动的膨胀阀。 反应器还包括静电吸盘中的温度传感器，能够模拟蒸发器和表面之间的热传递的热模型，其基于来自温度传感器和耦合到热模型的敏捷控制处理器的测量，并控制背侧气体压力源 响应于来自所选压力的变化模型的预测，其将使由传感器测量的温度更接近所需温度。

公开(公告)号：US20070091537A1

公开(公告)日：2007-04-26

申请号：US11408558

申请日：2006-04-21

申请人： Douglas Buchberger ,  Paul Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas Burns ,  Kallol Bera ,  Daniel Hoffman

发明人： Douglas Buchberger ,  Paul Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas Burns ,  Kallol Bera ,  Daniel Hoffman

IPC分类号： H01T23/00

CPC分类号： H01L21/67248 ,  F25B49/02 ,  F25B2400/0401 ,  F25B2400/0403 ,  F25B2400/0411 ,  F25B2700/21174 ,  F25B2700/21175 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32724 ,  H01J2237/2001 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831 ,  H05H2001/4682

摘要： A method of processing a workpiece in a plasma reactor having an electrostatic chuck for holding a workpiece in a chamber of the reactor includes providing a thermally conductive gas under pressure between a backside of the workpiece and a top surface of the electrostatic chuck, controlling the temperature of the electrostatic chuck, defining a desired workpiece temperature, measuring a current workpiece temperature or temperature related to the workpiece temperature and inputting the measured temperature to a thermal model representative of the electrostatic chuck. The method further includes determining from the thermal model a change in the pressure of the thermally conductive gas that would at least reduce the difference between the measured temperature and the desired temperature, and changing the pressure of the thermally conductive gas in accordance with the change determined from the thermal model.

摘要翻译： 在具有用于将工件保持在反应器的室中的静电卡盘的等离子体反应器中处理工件的方法包括在工件的背面和静电卡盘的顶表面之间提供压力下的导热气体，控制温度 定义所需的工件温度，测量与工件温度相关的当前工件温度或温度，并将测量温度输入到表示静电吸盘的热模型。 该方法还包括根据热模型确定导热气体的压力变化，其将至少减小测量温度和期望温度之间的差异，以及根据确定的变化来改变导热气体的压力 从热模型。

公开(公告)号：US20070089834A1

公开(公告)日：2007-04-26

申请号：US11408559

申请日：2006-04-21

申请人： Paul Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas Buchberger ,  Douglas Burns ,  Kallol Bera ,  Daniel Hoffman

发明人： Paul Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas Buchberger ,  Douglas Burns ,  Kallol Bera ,  Daniel Hoffman

IPC分类号： C23F1/00 ,  C23C16/00

CPC分类号： H01L21/67248 ,  F25B49/02 ,  F25B2400/0401 ,  F25B2400/0403 ,  F25B2400/0411 ,  F25B2700/21174 ,  F25B2700/21175 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32724 ,  H01J2237/2001 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831 ,  H05H2001/4682

摘要： A plasma reactor having a reactor chamber and an electrostatic chuck having a surface for holding a workpiece inside the chamber includes inner and outer zone backside gas pressure sources coupled to the electrostatic chuck for applying a thermally conductive gas under respective pressures to respective inner and outer zones of a workpiece-surface interface formed whenever a workpiece is held on the surface, and inner and outer evaporators inside respective inner and outer zones of the electrostatic chuck and a refrigeration loop having respective inner and outer expansion valves for controlling flow of coolant through the inner and outer evaporators respectively. The reactor further includes inner and outer zone temperature sensors in inner and outer zones of the electrostatic chuck and a thermal model capable of simulating heat transfer through the inner and outer zones, respectively, between the evaporator and the surface based upon measurements from the inner and outer temperature sensors, respectively. Inner and outer zone agile control processors coupled to the thermal model govern the inner and outer zone backside gas pressure sources, respectively, in response to predictions from the model of changes in the respective pressures that would bring the temperatures measured by the inner and outer zone sensors, respectively, closer to a desired temperature.

摘要翻译： 具有反应室和具有用于将工件保持在室内的表面的静电卡盘的等离子体反应器包括耦合到静电卡盘的内部和外部区域背侧气体压力源，用于将相应压力下的导热气体施加到相应的内部和外部区域 每当工件保持在表面上时形成的工件表面界面，以及静电卡盘的内部和外部区域内的内部和外部蒸发器，以及具有各自的内部和外部膨胀阀的制冷回路，用于控制冷却剂通过内部 和外部蒸发器。 反应器还包括静电卡盘的内部和外部区域中的内部和外部区域温度传感器以及能够模拟通过蒸发器和表面之间的内部和外部区域的热传递的热模型，其基于来自内部和 外部温度传感器。 耦合到热模型的内部和外部区域敏捷控制处理器分别响应于来自模型的各个压力的变化的预测来控制内部和外部区域背侧气体压力源，该模型将使由内部和外部区域测量的温度 传感器分别更接近所需的温度。

公开(公告)号：US20070087455A1

公开(公告)日：2007-04-19

申请号：US11360635

申请日：2006-02-22

申请人： Daniel Hoffman

发明人： Daniel Hoffman

IPC分类号： C23F1/00 ,  C23C16/00 ,  H01L21/00 ,  G01L21/30

CPC分类号： H01J37/32082 ,  H01J37/32165 ,  H01J37/3266 ,  H01L21/67069

摘要： A method of processing a workpiece in a plasma reactor includes coupling RF power from at least three RF power source of three respective frequencies to plasma in the reactor, setting ion energy distribution shape by selecting a ratio between the power levels of a first pair of the at least three RF power sources, and setting ion dissociation and ion density by selecting a ratio between the power levels of a remaining one of the three RF power sources and an applied magnetic field. The three respective frequencies can be an LF frequency, an HF frequency and a VHF frequency, wherein the first pair corresponds to the LF and HF frequencies and the second pair corresponds to the HF and VHF frequencies.

摘要翻译： 在等离子体反应器中处理工件的方法包括将来自三个相应频率的至少三个RF功率源的RF功率耦合到反应器中的等离子体，通过选择第一对的功率级之间的比率来设定离子能量分布形状 至少三个RF功率源，并且通过选择三个RF功率源中的剩余的一个功率电平和所施加的磁场的功率电平之间的比率来设定离子解离和离子密度。 三个相应频率可以是LF频率，HF频率和VHF频率，其中第一对对应于LF和HF频率，并且第二对对应于HF和VHF频率。