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    CAP ASSEMBLY HAVING STORAGE CHAMBER FOR SECONDARY MATERIAL WITH MOVABLE WORKING MEMBER
    51.
    发明申请
    CAP ASSEMBLY HAVING STORAGE CHAMBER FOR SECONDARY MATERIAL WITH MOVABLE WORKING MEMBER 有权
    具有具有可移动工作构件的二次材料的储存室的盖组件

    公开(公告)号：US20130105339A1

    公开(公告)日：2013-05-02

    申请号：US13716525

    申请日：2012-12-17

    Applicant: Jeong-Min Lee ,  Seong-Jae Lee

    Inventor： Jeong-Min Lee ,  Seong-Jae Lee

    IPC: B65D25/08

    CPC classification number: B65D25/08 ,  B65D51/2864

    Abstract: A cap assembly having a storage chamber for a secondary ingredient, which is adapted to a mouth of a container, comprising: a body having a mouth; a chamber part having a storage space for secondary ingredient in the body and a hole formed at the lower end thereof; said chamber part is sealed by a movable working member and is opened when the movable working member is removed from the hole upon removing the cap so that the secondary ingredient may be mixed with the first ingredient in the container, said the movable working member being adapted to maintain the opened hole, after moving to open the hole, thereby effectively mixing of the different ingredients.

    Abstract translation: 一种帽组件，其具有用于次要成分的储存室，其适于容器的口部，包括：具有口部的主体; 具有用于体内次要成分的储存空间和在其下端形成的孔的室部分; 所述腔室部分由可移动的工作构件密封，并且当移除所述帽时从所述孔中移除所述可移动工作构件以使得所述次要成分可与所述容器中的所述第一成分混合时所述腔室部分被打开，所述可移动工作构件适于 保持打开的孔，移动后打开孔，从而有效地混合不同的成分。

    Cap assembly having storage chamber for secondary material with inseparable working member
    53.
    发明申请
    Cap assembly having storage chamber for secondary material with inseparable working member 有权
    盖组件具有用于具有不可分离工作构件的次级材料的储存室

    公开(公告)号：US20100163442A1

    公开(公告)日：2010-07-01

    申请号：US12311599

    申请日：2006-12-12

    Applicant: Jeong-Min Lee ,  Seong-Jae Lee

    Inventor： Jeong-Min Lee ,  Seong-Jae Lee

    IPC: B65D51/28

    CPC classification number: B65D51/2878 ,  B65D47/243 ,  B65D51/2828 ,  B65D51/2864 ,  Y10S215/08

    Abstract: A cap assembly mounted on a neck of a container for containing a ingredient different from that in accommodated in a container comprises a cap body having an inner housing formed with a chamber for storage of a secondary ingredient and a working member adapted to open a low end opening of the chamber to allow the secondary ingredient in the chamber of the inner housing to be mixed with a primary ingredient in the container. The mixed ingredients may be discharged through an opening.

    Abstract translation: 安装在容器的颈部上的用于容纳与容纳在容器中的成分不同的成分的帽组件包括盖主体，其具有形成有用于存储次要成分的室的内部壳体和适于打开低端的工作构件 打开室以允许内壳体的腔室中的次要成分与容器中的主要成分混合。 混合的成分可以通过开口排出。

    Schottky barrier tunnel transistor using thin silicon layer on insulator and method for fabricating the same
    56.
    发明授权
    Schottky barrier tunnel transistor using thin silicon layer on insulator and method for fabricating the same 失效
    使用绝缘体上的薄硅层的肖特基势垒隧道晶体管及其制造方法

    公开(公告)号：US06693294B1

    公开(公告)日：2004-02-17

    申请号：US10331945

    申请日：2002-12-31

    Applicant: Moon-Gyu Jang ,  Seong-Jae Lee ,  Woo-Seok Cheong ,  Won-Ju Cho ,  Kyoung-Wan Park

    Inventor： Moon-Gyu Jang ,  Seong-Jae Lee ,  Woo-Seok Cheong ,  Won-Ju Cho ,  Kyoung-Wan Park

    IPC: H01L3900

    CPC classification number: H01L29/42384 ,  H01L29/458 ,  H01L29/7839 ,  H01L29/78609 ,  H01L29/78696

    Abstract: Provided are a Schottky barrier tunnel transistor (SBTT) and a method of fabricating the same. The SBTT includes a buried oxide layer formed on a base substrate layer and having a groove at its upper surface; an ultra-thin silicon-on-insulator (SOI) layer formed across the groove; an insulating layer wrapping the SOI layer on the groove; a gate formed to be wider than the groove on the insulating layer; source and drain regions each positioned at both sides of the gate, the source and drain regions formed of silicide; and a conductive layer for filling the groove. In the SBTT, the SOI layer is formed to an ultra-thin thickness to minimize the occurrence of a leakage current, and a channel in the SOI layer below the gate is completely wrapped by the gate and the conductive layer, thereby improving the operational characteristics of the SBTT.

    Abstract translation: 提供了一种肖特基势垒隧道晶体管（SBTT）及其制造方法。 SBTT包括形成在基底层上并在其上表面具有凹槽的掩埋氧化物层; 跨越沟槽形成的超薄绝缘体上硅（SOI）层; 将SOI层包裹在槽上的绝缘层; 形成为比绝缘层上的沟槽宽的栅极; 源极和漏极区域各自位于栅极的两侧，源极和漏极区域由硅化物形成; 以及用于填充凹槽的导电层。 在SBTT中，SOI层形成为超薄的厚度，以最小化泄漏电流的发生，栅极下方的SOI层中的沟道被栅极和导电层完全包围，从而提高了操作特性 的SBTT。

    Quantum interference device
    58.
    发明授权
    Quantum interference device 失效
    量子干扰装置

    公开(公告)号：US5519232A

    公开(公告)日：1996-05-21

    申请号：US352046

    申请日：1994-11-30

    Applicant: Kyoung-Wan Park ,  Seong-Jae Lee ,  Min-Cheol Shin

    Inventor： Kyoung-Wan Park ,  Seong-Jae Lee ,  Min-Cheol Shin

    IPC: H01L29/68 ,  H01L21/338 ,  H01L29/205 ,  H01L29/66 ,  H01L29/778 ,  H01L29/80 ,  H01L29/812 ,  H01L31/0328 ,  H01L31/0336

    CPC classification number: B82Y10/00 ,  H01L29/66977

    Abstract: A quantum interference device comprises a semi-insulating GaAs substrate; GaAs and AlGaAs layers sequentially formed with high purity on the substrate; a two-dimensional electron gas layer formed in the GaAs layer and serving as a channel; source/drain regions formed on the semi-insulating GaAs substrate and at both ends of a laminated portion composed of the GaAs/AlGaAs layers; and a gate formed on the AlGaAs layer and having a periodic structure wherein the length thereof varies in a periodic manner in a transverse direction. In the device, the electron gas layer formed in the GaAs layer is used as an electron path, and the phases of electrons passing along different electron paths are caused to interfere with each other by the gate, thereby causing the current of a drain therein to be maximized or minimized. The transconductance can be significantly increased.

    Abstract translation: 量子干涉装置包括半绝缘GaAs衬底; 在衬底上依次形成高纯度的GaAs和AlGaAs层; 形成在GaAs层中并用作沟道的二维电子气层; 在半绝缘GaAs衬底上形成的源极/漏极区域和由GaAs / AlGaAs层构成的层叠部分的两端; 以及形成在AlGaAs层上并且具有周期性结构的栅极，其中其长度在横向上以周期性方式变化。 在该器件中，使用形成在GaAs层中的电子气层作为电子通路，使通过不同的电子路径的电子相被栅极相互干扰，从而使其中的漏极的电流 最大化或最小化。 跨导可以显着增加。

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