Method of manufacturing a semiconductor device having elevated layers of differing thickness
    51.
    发明授权
    Method of manufacturing a semiconductor device having elevated layers of differing thickness 有权
    制造具有不同厚度的升高层的半导体器件的方法

    公开(公告)号:US08183115B2

    公开(公告)日:2012-05-22

    申请号:US13088020

    申请日:2011-04-15

    IPC分类号: H01L21/8234

    摘要: There is provided an SOI-MISFET including: an SOI layer; a gate electrode provided on the SOI layer interposing a gate insulator; and a first elevated layer provided higher in height from the SOI layer than the gate electrode at both sidewall sides of the gate electrode on the SOI layer so as to constitute a source and drain. Further, there is also provided a bulk-MISFET including: a gate electrode provided on a silicon substrate interposing a gate insulator thicker than the gate insulator of the SOI MISFET; and a second elevated layer configuring a source and drain provided on a semiconductor substrate at both sidewalls of the gate electrode. The first elevated layer is thicker than the second elevated layer, and the whole of the gate electrodes, part of the source and drain of the SOI-MISFET, and part of the source and drain of the bulk-MISFET are silicided.

    摘要翻译: 提供了SOI-MISFET,其包括:SOI层; 设置在插入栅极绝缘体的SOI层上的栅电极; 以及第一升高层,其在SOI层上的栅电极的两个侧壁侧的SOI层高于栅电极,从而构成源极和漏极。 此外,还提供了一种体MISFET,包括:设置在硅衬底上的栅电极,其插入比SOI MISFET的栅极绝缘体更厚的栅极绝缘体; 以及构造在所述栅电极的两个侧壁处设置在半导体衬底上的源极和漏极的第二升高层。 第一升高层比第二升高层厚,并且整个栅电极,SOI-MISFET的源极和漏极的一部分以及体MISFET的源极和漏极的一部分被硅化。

    Fabrication method and structure of semiconductor non-volatile memory device
    52.
    发明授权
    Fabrication method and structure of semiconductor non-volatile memory device 有权
    半导体非易失性存储器件的制造方法和结构

    公开(公告)号:US08084810B2

    公开(公告)日:2011-12-27

    申请号:US12648796

    申请日:2009-12-29

    IPC分类号: H01L21/336

    摘要: A non-volatile semiconductor memory device with good write/erase characteristics is provided. A selection gate is formed on a p-type well of a semiconductor substrate via a gate insulator, and a memory gate is formed on the p-type well via a laminated film composed of a silicon oxide film, a silicon nitride film, and a silicon oxide film. The memory gate is adjacent to the selection gate via the laminated film. In the regions on both sides of the selection gate and the memory gate in the p-type well, n-type impurity diffusion layers serving as the source and drain are formed. The region controlled by the selection gate and the region controlled by the memory gate located in the channel region between said impurity diffusion layers have the different charge densities of the impurity from each other.

    摘要翻译: 提供具有良好写入/擦除特性的非易失性半导体存储器件。 通过栅极绝缘体在半导体衬底的p型阱上形成选择栅极,并且通过由氧化硅膜,氮化硅膜和氮化硅膜构成的层叠膜在p型阱上形成存储栅极 氧化硅膜。 存储器栅极通过层叠膜与选择栅极相邻。 在p型阱中的选择栅极和存储栅极的两侧的区域中,形成用作源极和漏极的n型杂质扩散层。 由选择栅极控制的区域和由位于所述杂质扩散层之间的沟道区域中的存储栅极控制的区域具有彼此不同的杂质的电荷密度。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
    53.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号:US20110039385A1

    公开(公告)日:2011-02-17

    申请号:US12912609

    申请日:2010-10-26

    IPC分类号: H01L21/336

    摘要: Performance and reliability of a semiconductor device including a non-volatile memory are improved. A memory cell of the non-volatile memory includes, over an upper portion of a semiconductor substrate, a select gate electrode formed via a first dielectric film and a memory gate electrode formed via a second dielectric film formed of an ONO multilayered film having a charge storing function. The first dielectric film functions as a gate dielectric film, and includes a third dielectric film made of silicon oxide or silicon oxynitride and a metal-element-containing layer made of a metal oxide or a metal silicate formed between the select gate electrode and the third dielectric film. A semiconductor region positioned under the memory gate electrode and the second dielectric film has a charge density of impurities lower than that of a semiconductor region positioned under the select gate electrode and the first dielectric film.

    摘要翻译: 提高了包括非易失性存储器的半导体器件的性能和可靠性。 非易失性存储器的存储单元包括在半导体衬底的上部上的经由第一电介质膜形成的选择栅电极和通过由具有电荷的ONO多层膜形成的第二电介质膜形成的存储栅电极 存储功能。 第一介质膜用作栅极电介质膜,并且包括由氧化硅或氮氧化硅制成的第三电介质膜和由选择栅电极和第三电极之间形成的金属氧化物或金属硅酸盐构成的含金属元素层 电介质膜。 位于存储栅电极下方的半导体区域和第二电介质膜的电荷密度低于位于选择栅电极和第一电介质膜下方的半导体区域的电荷密度。

    Nonvolatile semiconductor memory device
    54.
    发明授权
    Nonvolatile semiconductor memory device 有权
    非易失性半导体存储器件

    公开(公告)号:US07847331B2

    公开(公告)日:2010-12-07

    申请号:US11030900

    申请日:2005-01-10

    IPC分类号: H01L29/792

    摘要: In a situation where a memory cell includes an ONO film, which comprises a silicon nitride film for charge storage and oxide films positioned above and below the silicon nitride film; a memory gate above the ONO film; a select gate, which is adjacent to a lateral surface of the memory gate via the ONO film; a gate insulator positioned below the select gate; a source region; and a drain region, an erase operation is performed by injecting holes generated by BTBT into the silicon nitride film while applying a positive potential to the source region, applying a negative potential to the memory gate, applying a positive potential to the select gate, and flowing a current from the drain region to the source region, thus improving the characteristics of a nonvolatile semiconductor memory device.

    摘要翻译: 在存储单元包括ONO膜的情况下,其包括用于电荷存储的氮化硅膜和位于氮化硅膜上方和下方的氧化膜; 在ONO电影上方的记忆门; 选择栅极,其经由ONO膜与存储栅的侧表面相邻; 位于选择门下方的栅极绝缘体; 源区; 和漏极区域,通过将BTBT产生的空穴注入氮化硅膜,同时向源极区域施加正电位,向存储栅极施加负电位,向选择栅极施加正电位,进行擦除操作,以及 使电流从漏极区域流向源极区域,从而改善非易失性半导体存储器件的特性。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    55.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
    半导体器件及其制造方法

    公开(公告)号:US20100258869A1

    公开(公告)日:2010-10-14

    申请号:US12757090

    申请日:2010-04-09

    IPC分类号: H01L27/12 H01L21/336

    摘要: An n well and a p well disposed at a predetermined interval on a main surface of a SOI substrate with a thin BOX layer are formed, and an nMIS formed on the p well has a pair of n-type source/drain regions formed on semiconductor layers stacked on a main surface of the SOI layer at a predetermined distance, a gate insulating film, a gate electrode and sidewalls sandwiched between the pair of n-type source/drain regions. A device isolation is formed between the n well and the p well, and a side edge portion of the device isolation extends toward a gate electrode side more than a side edge portion of the n-type source/drain region (sidewall of the BOX layer).

    摘要翻译: 形成在具有薄BOX层的SOI衬底的主表面上以预定间隔布置的n阱和p阱,并且在p阱上形成的nMIS具有形成在半导体层上的一对n型源极/漏极区 堆叠在SOI层的主表面上,预定距离处,栅极绝缘膜,栅电极和夹在该对n型源极/漏极区之间的侧壁。 在n阱和p阱之间形成器件隔离,并且器件隔离的侧边缘部分比n型源极/漏极区域的侧边缘部分(BOX层的侧壁)朝向栅电极侧延伸 )。

    DISK LABEL PRINTER
    56.
    发明申请
    DISK LABEL PRINTER 有权
    磁盘标签打印机

    公开(公告)号:US20090015648A1

    公开(公告)日:2009-01-15

    申请号:US12141587

    申请日:2008-06-18

    IPC分类号: B41J17/00

    CPC分类号: B41J3/4071

    摘要: Disclosed is a disk label printer that includes a slot-in type optical disk driving mechanism and a printing mechanism integrated with each other, has a small size, and smoothly transfers optical disks. The disclosed disk label printer includes: a case that has a slot through which an optical disk is inserted or ejected formed therein; an optical disk driving mechanism that is provided in the case and writes and/or reads signals to and/or from the optical disk mounted to a disk mounting portion; and a printing mechanism that is provided in the case and includes a thermal head which prints a desired image on a label surface of the optical disk. The printing mechanism is provided on a transfer path of the optical disk toward the optical disk driving mechanism between the slot and the optical disk driving mechanism. The thermal head and a platen roller come into pressure contact with each other with the optical disk interposed therebetween on the transfer path, only when the optical disk is transferred during the driving of the printing mechanism. The thermal head and the platen roller are withdrawn from the transfer path so as to be separated from each other, when the optical disk is transferred during operations other than the driving of the printing mechanism.

    摘要翻译: 公开了一种包括插入式光盘驱动机构和彼此集成的打印机构的盘标签打印机,其尺寸小,并且平滑地传送光盘。 所公开的盘标签打印机包括:具有插入或喷射光盘的槽, 光盘驱动机构,其设置在所述壳体中,并向从所述盘安装部安装的光盘写入和/或读取信号; 以及设置在壳体中并且包括在光盘的标签表面上打印所需图像的热敏头的打印机构。 打印机构设置在光盘的传送路径朝向光盘驱动机构的槽和光盘驱动机构之间。 只有当在打印机构的驱动期间传送光盘时,热敏头和压纸辊彼此压力接触,光盘插入在传送路径上。 当驱动印刷机构以外的操作期间传送光盘时,热敏头和压纸滚筒从传送路径中取出,以便彼此分离。

    Semiconductor nonvolatile memory device
    57.
    发明授权
    Semiconductor nonvolatile memory device 失效
    半导体非易失性存储器件

    公开(公告)号:US07443731B2

    公开(公告)日:2008-10-28

    申请号:US11727592

    申请日:2007-03-27

    IPC分类号: G11C11/34 G11C16/04

    摘要: An operation scheme for operating stably a semiconductor nonvolatile memory device is provided.When hot-hole injection is conducted in the semiconductor nonvolatile memory device of a split gate structure, the hot-hole injection is verified using a crossing point that does not change with time. Thus, an erased state can be verified without being aware of any time-varying changes.Also, programming or programming/erasure is conducted by repeating pulse voltage or multi-step voltage application to a gate section multiple times.

    摘要翻译: 提供一种稳定运行半导体非易失性存储器件的操作方案。 当在分裂栅极结构的半导体非易失性存储器件中进行热空穴注入时,使用不随时间变化的交叉点来验证热孔注入。 因此,可以验证擦除状态,而不知道任何时变变化。 此外,通过将多次脉冲电压或多级电压施加到栅极部分进行编程或编程/擦除。

    Nonvolatile semiconductor memory device with tapered sidewall gate and method of manufacturing the same
    58.
    发明授权
    Nonvolatile semiconductor memory device with tapered sidewall gate and method of manufacturing the same 有权
    具有锥形侧壁栅极的非易失性半导体存储器件及其制造方法

    公开(公告)号:US07442986B2

    公开(公告)日:2008-10-28

    申请号:US11797839

    申请日:2007-05-08

    IPC分类号: H01L29/788

    摘要: In a split gate type nonvolatile memory cell in which a MOS transistor for a nonvolatile memory using a charge storing film and a MOS transistor for selecting it are adjacently formed, the charge storing characteristic is improved and the resistance of the gate electrode is reduced. In order to prevent the thickness reduction at the corner portion of the charge storing film and improve the charge storing characteristic, a taper is formed on the sidewall of the select gate electrode. Also, in order to stably perform a silicide process for reducing the resistance of the self-aligned gate electrode, the sidewall of the select gate electrode is recessed. Alternatively, a discontinuity is formed between the upper portion of the self-aligned gate electrode and the upper portion of the select gate electrode.

    摘要翻译: 在其中使用电荷存储膜的非易失性存储器的MOS晶体管和用于选择它的MOS晶体管相邻形成的分离栅极型非易失性存储单元中,电荷存储特性得到改善,栅电极的电阻降低。 为了防止电荷存储薄膜的拐角部分的厚度减小并且提高电荷存储特性,在选择栅电极的侧壁上形成锥形。 此外,为了稳定地进行用于降低自对准栅电极的电阻的硅化物工艺,选择栅电极的侧壁凹陷。 或者,在自对准栅电极的上部和选择栅电极的上部之间形成不连续。

    Method of fabricating nonvolatile semiconductor memory devices with uniform sidewall gate length
    59.
    发明申请
    Method of fabricating nonvolatile semiconductor memory devices with uniform sidewall gate length 审中-公开
    制造具有均匀侧壁栅极长度的非易失性半导体存储器件的方法

    公开(公告)号:US20060234454A1

    公开(公告)日:2006-10-19

    申请号:US11404899

    申请日:2006-04-17

    IPC分类号: H01L21/336

    摘要: After forming a first dielectric film on the main surface of a semiconductor substrate, a first conductive film is formed on the first dielectric film, and then, the surface of the first conductive film is planarized by a CMP method. Subsequently, the first conductive film and the first dielectric film are etched, thereby forming a select gate having a first gate electrode and a first gate dielectric film. Subsequently, after forming a second dielectric film on the sidewall of the first gate electrode and the main surface, a second conductive film is formed on the second dielectric film, and the second conductive film is etched, thereby forming a memory gate having a second gate electrode and a second gate dielectric film.

    摘要翻译: 在半导体衬底的主表面上形成第一电介质膜之后,在第一电介质膜上形成第一导电膜,然后通过CMP方法将第一导电膜的表面平坦化。 随后,蚀刻第一导电膜和第一电介质膜,从而形成具有第一栅极电极和第一栅极电介质膜的选择栅极。 随后,在第一栅电极和主表面的侧壁上形成第二电介质膜之后,在第二电介质膜上形成第二导电膜,并且蚀刻第二导电膜,从而形成具有第二栅极的存储栅极 电极和第二栅极电介质膜。

    Nonvolatile semiconductor memory device
    60.
    发明申请
    Nonvolatile semiconductor memory device 有权
    非易失性半导体存储器件

    公开(公告)号:US20050230736A1

    公开(公告)日:2005-10-20

    申请号:US11030900

    申请日:2005-01-10

    摘要: In a situation where a memory cell includes an ONO film, which comprises a silicon nitride film for charge storage and oxide films positioned above and below the silicon nitride film; a memory gate above the ONO film; a select gate, which is adjacent to a lateral surface of the memory gate via the ONO film; a gate insulator positioned below the select gate; a source region; and a drain region, an erase operation is performed by injecting holes generated by BTBT into the silicon nitride film while applying a positive potential to the source region, applying a negative potential to the memory gate, applying a positive potential to the select gate, and flowing a current from the drain region to the source region, thus improving the characteristics of a nonvolatile semiconductor memory device.

    摘要翻译: 在存储单元包括ONO膜的情况下,其包括用于电荷存储的氮化硅膜和位于氮化硅膜上方和下方的氧化膜; 在ONO电影上方的记忆门; 选择栅极,其经由ONO膜与存储栅的侧表面相邻; 位于选择门下方的栅极绝缘体; 源区; 和漏极区域,通过将BTBT产生的空穴注入氮化硅膜,同时向源极区域施加正电位,向存储栅极施加负电位,向选择栅极施加正电位,进行擦除操作,以及 使电流从漏极区域流向源极区域,从而改善非易失性半导体存储器件的特性。