Plasma processor with electrode simultaneously responsive to plural frequencies
    51.
    发明授权
    Plasma processor with electrode simultaneously responsive to plural frequencies 有权
    等离子体处理器,电极同时响应多个频率

    公开(公告)号:US06841943B2

    公开(公告)日:2005-01-11

    申请号:US10180978

    申请日:2002-06-27

    CPC分类号: H01J37/32082 H01J37/32165

    摘要: A plasma in a vacuum chamber where a workpiece is processed is bounded by a plasma confinement volume including a region between a first electrode simultaneously responsive to power at first and second RF frequencies and a DC grounded second electrode. A DC grounded extension is substantially aligned with the first electrode. A substantial percentage of power at the first frequency is coupled to a path including the first and second electrodes but not the extension while a substantial percentage of power at the second frequency is coupled to a path including the first electrodes and extension, but not the second electrode. Changing the relative powers at the first and second frequencies, as applied to the first electrode, controls DC bias voltage of the first electrode.

    摘要翻译: 处理工件的真空室中的等离子体由包括第一电极同时响应于第一和第二RF频率的功率的第一电极和直流接地第二电极之间的等离子体约束体积界定。 直流接地延伸部基本上与第一电极对准。 在第一频率处的相当大的功率百分比被耦合到包括第一和第二电极而不是扩展的路径,而在第二频率处的相当大的功率百分比被耦合到包括第一电极和延伸的路径,而不是第二频率的路径 电极。 施加到第一电极的第一和第二频率处的相对功率的改变控制第一电极的直流偏置电压。

    Temperature control system for plasma processing apparatus
    52.
    发明授权
    Temperature control system for plasma processing apparatus 有权
    等离子体处理装置的温度控制系统

    公开(公告)号:US06302966B1

    公开(公告)日:2001-10-16

    申请号:US09439675

    申请日:1999-11-15

    IPC分类号: C23C1646

    CPC分类号: H01J37/32522

    摘要: A plasma processing system that includes a temperature management system and method that can achieve very accurate temperature control over a plasma processing apparatus is disclosed. In one embodiment, the temperature management system and method operate to achieve tight temperature control over surfaces of the plasma processing apparatus which interact with the plasma during fabrication of semiconductor devices. The tight temperature control offered by the invention can be implemented with combination heating and cooling blocks such that both heating and cooling can be provided from the same thermal interface.

    摘要翻译: 公开了一种等离子体处理系统,其包括能够对等离子体处理装置实现非常精确的温度控制的温度管理系统和方法。 在一个实施例中,温度管理系统和方法用于在半导体器件的制造期间实现与等离子体相互作用的等离子体处理装置的表面的紧密温度控制。 本发明提供的严格的温度控制可以通过组合加热和冷却块实现,使得可以从相同的热界面提供加热和冷却。

    Compact subnanosecond high voltage pulse generation system for cell electro-manipulation
    53.
    发明授权
    Compact subnanosecond high voltage pulse generation system for cell electro-manipulation 有权
    紧凑的亚纳秒高电压脉冲发生系统,用于电池电操作

    公开(公告)号:US09493765B2

    公开(公告)日:2016-11-15

    申请号:US12079017

    申请日:2008-03-24

    摘要: Disclosed are methods and systems for subnanosecond rise time high voltage (HV) electric pulse delivery to biological loads. The system includes an imaging device and monitoring apparatus used for bio-photonic studies of pulse induced intracellular effects. The system further features a custom fabricated microscope slide having micro-machined electrodes. A printed circuit board to interface the pulse generator to the micro-machined glass slide having the cell solution is disclosed. An low-parasitic electronic setup to interface with avalanche transistor-switched pulse generation system is also disclosed. The pc-board and the slide are configured to match the output impedance of the pulse generator which minimizes reflection back into the pulse generator, and minimizes distortion of the pulse shape and pulse parameters. The pc-board further includes a high bandwidth voltage divider for real-time monitoring of pulses delivered to the cell solutions.

    摘要翻译: 公开了亚纳秒上升时间高压(HV)电脉冲输送到生物负载的方法和系统。 该系统包括用于脉冲诱导的细胞内效应的生物光子学研究的成像装置和监测装置。 该系统还具有具有微加工电极的定制的显微镜载玻片。 公开了一种用于将脉冲发生器与具有电池溶液的微加工玻璃板接合的印刷电路板。 还公开了一种与雪崩晶体管开关脉冲发生系统接口的低寄生电子设备。 印刷电路板和载玻片配置成匹配脉冲发生器的输出阻抗,将脉冲发生器的反射最小化,并使脉冲形状和脉冲参数的失真最小化。 印刷电路板还包括一个高带宽分压器,用于实时监测传送到电池解决方案的脉冲。

    Apparatus for the removal of a fluorinated polymer from a substrate
    54.
    发明授权
    Apparatus for the removal of a fluorinated polymer from a substrate 有权
    用于从基材除去氟化聚合物的装置

    公开(公告)号:US08926789B2

    公开(公告)日:2015-01-06

    申请号:US12750612

    申请日:2010-03-30

    CPC分类号: H01L21/02087 B08B7/0035

    摘要: An apparatus generating a plasma for removing fluorinated polymer from a substrate is provided. The apparatus includes a powered electrode assembly, which includes a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The apparatus also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated. The first wire mesh is shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, which has an outlet at one end for providing the plasma to remove the fluorinated polymer.

    摘要翻译: 提供一种从衬底生成用于除去氟化聚合物的等离子体的装置。 所述装置包括电源电极组件,其包括供电电极,第一电介质层和布置在所述电源电极和所述第一电介质层之间的第一电线网。 该装置还包括与动力电极组件相对设置的接地电极组件,以便形成其中产生等离子体的空腔。 当空腔中存在等离子体时,第一电介质层通过第一电介质层屏蔽第一丝网,其在一端具有出口以提供等离子体以除去氟化聚合物。

    Antenna for plasma processor and apparatus
    56.
    发明授权
    Antenna for plasma processor and apparatus 失效
    等离子体处理器和设备天线

    公开(公告)号:US08454794B2

    公开(公告)日:2013-06-04

    申请号:US13524734

    申请日:2012-06-15

    IPC分类号: H01L21/306 C23C16/00

    CPC分类号: H01J37/321 H01J37/32183

    摘要: An antenna includes excitation terminals responsive to an RF source to supply an RF electromagnetic field to a plasma that processes a workpiece in a vacuum chamber. The coil includes a transformer having a primary winding coupled to the excitation terminals and a multi-turn plasma excitation secondary winding connected in series with a capacitor.

    摘要翻译: 天线包括响应于RF源的激励端子,以将RF电磁场提供给处理真空室中的工件的等离子体。 线圈包括具有耦合到激励端子的初级绕组的变压器和与电容器串联连接的多匝等离子体激发次级绕组。

    Bevel Edge Plasma Chamber With Top and Bottom Edge Electrodes
    57.
    发明申请
    Bevel Edge Plasma Chamber With Top and Bottom Edge Electrodes 有权
    具有顶部和底部电极的斜边等离子体室

    公开(公告)号:US20120273134A1

    公开(公告)日:2012-11-01

    申请号:US13547700

    申请日:2012-07-12

    IPC分类号: B08B13/00

    摘要: A plasma processing chamber configured for cleaning a bevel edge of a substrate is provided. The chamber includes a top edge electrode surrounding an insulating plate, and the insulator plate opposes a bottom electrode. The top edge electrode is electrically grounded and separated from the insulator plate by a top dielectric ring. The chamber also includes a bottom edge electrode that is electrically grounded and surrounds the bottom electrode and is separated from the bottom electrode by a bottom dielectric ring. The bottom edge electrode is oriented to oppose the top edge electrode, and the bottom edge electrode has an L shape that is up-facing. Bevel edge plasma processing of a substrate edge is configured to be processed in a chamber having the top and bottom edge electrodes.

    摘要翻译: 提供了一种用于清洁基板的斜边缘的等离子体处理室。 该室包括围绕绝缘板的顶边电极,绝缘体板与底部电极相对。 顶边电极通过顶部介质环电接地并与绝缘体板分离。 该腔室还包括底部电极,其电接地并且围绕底部电极并且通过底部介电环与底部电极分离。 底边电极被定向为与顶边缘电极相对,并且底边电极具有面向上的L形。 衬底边缘的斜边等离子体处理被配置为在具有顶部和底部边缘电极的腔室中进行处理。

    Antenna for plasma processor and apparatus
    58.
    发明授权
    Antenna for plasma processor and apparatus 有权
    等离子体处理器和设备天线

    公开(公告)号:US08277604B2

    公开(公告)日:2012-10-02

    申请号:US13020170

    申请日:2011-02-03

    IPC分类号: C23C16/00 H01L21/306

    CPC分类号: H01J37/321 H01J37/32183

    摘要: An antenna includes excitation terminals responsive to an RF source to supply an RF electromagnetic field to a plasma that processes a workpiece in a vacuum chamber. The coil includes a transformer having a primary winding coupled to the excitation terminals and a multi-turn plasma excitation secondary winding connected in series with a capacitor.

    摘要翻译: 天线包括响应于RF源的激励端子,以将RF电磁场提供给处理真空室中的工件的等离子体。 线圈包括具有耦合到激励端子的初级绕组的变压器和与电容器串联连接的多匝等离子体激发次级绕组。

    Nanosecond pulse generator with a protector circuit
    59.
    发明授权
    Nanosecond pulse generator with a protector circuit 有权
    具有保护电路的纳秒脉冲发生器

    公开(公告)号:US08120207B2

    公开(公告)日:2012-02-21

    申请号:US12703078

    申请日:2010-02-09

    IPC分类号: H03K3/00

    摘要: This invention relates to a pulse generator circuit for delivering a short high current pulse to a load. This pulse generator comprises a junction recovery diode, a switch, a first resonant circuit and a second resonant circuit. The diode may be configured to store charges in its depletion layer when there is a forward flow of a current and to rapidly switch open after the depletion layer is discharged by a reverse flow of a current. After the diode rapidly switch opens, the pulse generator may provide a reverse current to the load. This pulse generator may be configured to generate at least one pulse that is having a length of no more than 100 nanoseconds at the full-width-at-half-maximum and an amplitude of at least 1 kilovolt. Electrodes may be connected to the pulse generator to deliver one pulse or plurality of pulses to biological cells such as tumor cells.

    摘要翻译: 本发明涉及用于将短的高电流脉冲传送到负载的脉冲发生器电路。 该脉冲发生器包括结恢复二极管,开关,第一谐振电路和第二谐振电路。 二极管可以被配置为当存在电流的正向流时在其耗尽层中存储电荷,并且在耗尽层被电流的反向流放电之后快速地切换开路。 二极管快速开关打开后,脉冲发生器可能会向负载提供反向电流。 该脉冲发生器可以被配置为产生至少一个脉冲,该脉冲具有在全宽度最大值和至少1千伏的幅度下不超过100纳秒的长度。 电极可以连接到脉冲发生器以将一个脉冲或多个脉冲递送到诸如肿瘤细胞的生物细胞。

    PLASMA CHAMBER FOR WAFER BEVEL EDGE PROCESSING
    60.
    发明申请
    PLASMA CHAMBER FOR WAFER BEVEL EDGE PROCESSING 有权
    用于波浪边缘加工的等离子体室

    公开(公告)号:US20110186227A1

    公开(公告)日:2011-08-04

    申请号:US13084849

    申请日:2011-04-12

    IPC分类号: B08B13/00 C23F1/08

    摘要: The embodiments provide structures and mechanisms for removal of etch byproducts, dielectric films and metal films on and near the substrate bevel edge, and chamber interior to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. In one example, a chamber for wafer bevel edge cleaning is provided. The chamber includes a bottom electrode having a bottom electrode surface for supporting the wafer when present. Also included is a top edge electrode surrounding an insulating plate. The insulator plate is opposing the bottom electrode. The top edge electrode is electrically grounded and has a down-facing L shape. Further included in the chamber is a bottom edge electrode that is electrically grounded and spaced apart from the bottom electrode. The bottom edge electrode is disposed to encircle the bottom electrode. The bottom edge electrode is oriented to oppose the down-facing L shape of the top edge electrode.

    摘要翻译: 这些实施例提供用于去除基板斜边缘上和附近的蚀刻副产物,电介质膜和金属膜的结构和机构,以及室内,以避免聚合物副产物和沉积膜的积聚并提高工艺产率。 在一个示例中,提供了用于晶片斜面边缘清洁的室。 该室包括底部电极,其具有用于在存在时支撑晶片的底部电极表面。 还包括围绕绝缘板的顶边电极。 绝缘板与底部电极相对。 顶边电极电接地并具有向下的L形状。 还包括在腔室中的底边电极是电接地的并且与底部电极间隔开。 下边缘电极被设置成环绕底部电极。 底部边缘电极被定向成与顶部边缘电极的向下的L形相对。