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    Optical Coupler Having Anchored Cantilever Structure With Multi-Stage Inverse Taper Core Waveguide And Fabrication Method Thereof
    52.
    发明申请
    Optical Coupler Having Anchored Cantilever Structure With Multi-Stage Inverse Taper Core Waveguide And Fabrication Method Thereof 有权
    具有多级反锥形芯波导的锚固悬臂结构的光耦合器及其制造方法

    公开(公告)号：US20160041340A1

    公开(公告)日：2016-02-11

    申请号：US14818715

    申请日：2015-08-05

    申请人： SiFotonics Technologies Co., Ltd.

    发明人： Tuo Shi ,  Tzung-I Su ,  Changhua Chen ,  Yongbo Shao ,  Dong Pan

    IPC分类号： G02B6/30 ,  G02B6/14 ,  G02B6/26 ,  G02B6/136

    CPC分类号： G02B6/305 ,  G02B6/1228 ,  G02B6/136 ,  G02B2006/12061

    摘要： An optical coupler structure may include a substrate, a waveguide section and an anchored cantilever section. The substrate may include a main body and a sub-pillar structure formed on the main body. The waveguide section may be disposed on the substrate, and may include a core waveguide of a first material surrounded by a cladding layer of a second material. The anchored cantilever section may be disposed on the sub-pillar structure on the substrate, which may be configured to support the cantilever section and separate the cantilever section from the main body of the substrate. The anchored cantilever section may include a multi-stage inverse taper core waveguide and a cladding layer, of the second material, which surrounds the multi-stage inverse taper core waveguide.

    摘要翻译： 光耦合器结构可以包括衬底，波导部分和锚定悬臂部分。 基板可以包括形成在主体上的主体和子柱结构。 波导部分可以设置在基板上，并且可以包括由第二材料的包层围绕的第一材料的芯波导。 锚定的悬臂部分可以设置在基底上的子柱结构上，其可被配置为支撑悬臂部分并将悬臂部分与基底的主体分开。 锚定的悬臂部分可以包括围绕多级逆锥形磁芯波导的第二材料的多级逆锥形磁芯波导和包覆层。

    Electro-optic silicon modulator with alternative capacitance-loaded coplanar waveguide structures
    53.
    发明授权
    Electro-optic silicon modulator with alternative capacitance-loaded coplanar waveguide structures 有权
    具有替代电容负载共面波导结构的电光硅调制器

    公开(公告)号：US09223185B2

    公开(公告)日：2015-12-29

    申请号：US14454881

    申请日：2014-08-08

    申请人： SiFotonics Technologies Co., Ltd.

    发明人： Changhua Chen ,  Yanwu Zhang ,  Dong Pan ,  Tzungi Su

    IPC分类号： G02F1/225 ,  G02F1/21

    CPC分类号： G02F1/2257 ,  G02F1/2255 ,  G02F2001/212 ,  G02F2201/122

    摘要： Embodiments of the present disclosure provide a high-speed silicon modulator without the microwave mode conversion and provide 50-ohm impedance matching to drivers simultaneously. In one aspect, a device may include an input waveguide region, an optic splitter, two optic phase shifters, an optic splitter, and an output waveguide. The device may include two curved waveguides. Either or both of the curved waveguides may have specially doped regions including PN junctions or MOS capacitors. The PN junctions or MOS capacitors may be alternatively connected to both slots of a coplanar waveguide forming the electrodes.

    摘要翻译： 本公开的实施例提供了一种无需微波模式转换的高速硅调制器，同时为驱动器提供50欧姆阻抗匹配。 在一个方面，器件可以包括输入波导区域，光分路器，两个光学移相器，光分路器和输出波导。 该装置可以包括两个弯曲波导。 弯曲波导中的任一个或两者可以具有包括PN结或MOS电容器的特殊掺杂区域。 PN结或MOS电容器可以替代地连接到形成电极的共面波导的两个槽。

    A Ge-Si Avalanche Photodiode With Silicon Buffer Layer And Edge Electric Field Buffer Region
    55.
    发明申请
    A Ge-Si Avalanche Photodiode With Silicon Buffer Layer And Edge Electric Field Buffer Region 有权
    具有硅缓冲层和边缘电场缓冲区的Ge-Si雪崩光电二极管

    公开(公告)号：US20150028443A1

    公开(公告)日：2015-01-29

    申请号：US14339440

    申请日：2014-07-23

    申请人： SiFotonics Technologies Co., Ltd.

    发明人： Tuo Shi ,  Mengyuan Huang ,  Pengfei Cai ,  Su Li ,  Ching-yin Hong ,  Wang Chen ,  Liangbo Wang ,  Dong Pan

    IPC分类号： H01L31/028 ,  H01L31/107 ,  H01L31/0352

    CPC分类号： H01L31/028 ,  H01L31/035281 ,  H01L31/1075 ,  Y02E10/547

    摘要： Various embodiments of a germanium-on-silicon (Ge—Si) avalanche photodiode are provided. In one aspect, the Ge—Si avalanche photodiode utilizes a silicon buffer layer to reduce the energy of holes drifting into absorption layer where the absorption material has lower ionization threshold, thereby suppressing multiplication noise and increasing the gain-bandwidth product of the avalanche photodiode. In another aspect, the Ge—Si avalanche photodiode utilizes an edge electric field buffer layer region to reduce the electric field along the sidewall of multiplication layer, where high electric field is applied for avalanche, thereby reducing probability of sidewall breakdown and enhancing reliability of the avalanche photodiode.

    摘要翻译： 提供了硅上硅（Ge-Si）雪崩光电二极管的各种实施例。 一方面，Ge-Si雪崩光电二极管利用硅缓冲层来降低漂移到吸收层中的空穴的能量，其中吸收材料具有较低的离子化阈值，从而抑制乘法噪声并增加雪崩光电二极管的增益带宽乘积。 另一方面，Ge-Si雪崩光电二极管利用边缘电场缓冲层区域来减小沿着增加层的侧壁的电场，其中施加高电场用于雪崩，从而降低侧壁破裂的可能性并提高其可靠性 雪崩光电二极管

    Coplanar Waveguide Transmission Line And Silicon-Based Electro-Optic Modulator Comprising The Same
    56.
    发明申请
    Coplanar Waveguide Transmission Line And Silicon-Based Electro-Optic Modulator Comprising The Same 有权

    公开(公告)号：US20210286202A1

    公开(公告)日：2021-09-16

    申请号：US17194218

    申请日：2021-03-06

    申请人： SiFotonics Technologies Co., Ltd.

    发明人： Yadong Liu ,  Pengfei Cai ,  Tzung-I Su ,  Dong Pan

    IPC分类号： G02F1/025 ,  G02F1/21 ,  G02F1/225

    摘要： Various embodiments of a coplanar waveguide (CPW) transmission line as well as a silicon-based electro-optic (E-O) modulator comprising the CPW transmission line are described. The CPW transmission line has a curved or winding shape. The silicon-based E-O modulator includes a rib optical waveguide, a beam splitter, a beam combiner, and a CPW transmission line that exhibits the winding shape. At least one of the two optical arms of the rib optical waveguide alternately and periodically extends through a first groove and a second groove of the CPW transmission line. The plurality of active sections of the rib optical waveguide are evenly distributed on both sides of the CPW transmission line to suppress undesired transmission modes. An increased length of transmission path of the rib optical waveguide is also avoided or minimized, thereby reducing the transmission speed mismatch of the E-O modulator, which is essential for achieving high-speed operation.

    Monolithic Electro-Optical Modulator With Comb-Shaped Transmission Line
    57.
    发明申请
    Monolithic Electro-Optical Modulator With Comb-Shaped Transmission Line 审中-公开

    公开(公告)号：US20200183197A1

    公开(公告)日：2020-06-11

    申请号：US16706107

    申请日：2019-12-06

    申请人： SiFotonics Technologies Co., Ltd.

    发明人： Yadong Liu ,  Tzung-I Su ,  Dong Pan

    IPC分类号： G02F1/025 ,  G02B6/12

    摘要： Various embodiments of a monolithic electro-optical (E-O) modulator are described, which may be fabricated on a silicon-on-insulator substrate. The monolithic E-O modulator includes an optical waveguide that allows an optical signal to propagate therein. The monolithic E-O modulator also includes a comb-shaped transmission line for conducting an electrical modulation signal that modulates the optical signal. The comb-shaped transmission line includes electrical conductors running in parallel with the optical waveguide. At least one of the conductors includes recesses or thin slots that form the conductor into a shape having a plurality of teeth, like a comb. The comb-shaped transmission line can be engineered to realize a close matching between a propagation velocity of the optical signal along the optical waveguide and a group velocity of the electrical modulation signal along the comb-shaped transmission line, which helps to achieve a high operating speed of the monolithic E-O modulator.

    Monolithic Electro-Optical Modulator Having Suspended Structure
    59.
    发明申请
    Monolithic Electro-Optical Modulator Having Suspended Structure 审中-公开

    公开(公告)号：US20190302487A1

    公开(公告)日：2019-10-03

    申请号：US16370821

    申请日：2019-03-29

    申请人： SiFotonics Technologies Co., Ltd.

    发明人： Mengyuan Huang ,  Yadong Liu ,  Tzung-I Su ,  Pengfei Cai ,  Ching-yin Hong ,  Dong Pan

    IPC分类号： G02F1/025

    摘要： Various embodiments of a monolithic electro-optical (E-O) modulator are described herein. The monolithic E-O modulator may include a phase shifter having a suspended structure. The suspended structure may be realized by partially or completely removing silicon material underneath the active area of the phase shifter to form a void in the bulk silicon substrate supporting the phase shifter. The suspended structure may be utilized to result in a lower radio-frequency loss and an effective group refractive index of the phase shifter that is closer to the refractive index of silicon waveguides or optical fibers, both advantageous to enhancing the performance of the E-O modulator such as a higher operating bandwidth.