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104 条记录 (耗时 0.193 秒)

    Technique for noise reduction in a torque-based chemical-mechanical polishing endpoint detection system
    52.
    发明授权
    Technique for noise reduction in a torque-based chemical-mechanical polishing endpoint detection system 失效
    基于扭矩的化学机械抛光终点检测系统降噪技术

    公开(公告)号：US06741913B2

    公开(公告)日：2004-05-25

    申请号：US10013196

    申请日：2001-12-11

    申请人： Xinhui Wang ,  Yingru Gu ,  Leping Li

    发明人： Xinhui Wang ,  Yingru Gu ,  Leping Li

    IPC分类号： G05B1300

    CPC分类号： B24B37/013 ,  B24B49/16

    摘要： A method is described for noise reduction in a CMP endpoint detection system employing torque measurement. The torque signals are acquired using an adjustable sampling rate and sample size, and averaged using a moving array of adjustable size. By introducing these three adjustable quantities in the torque-based endpoint control algorithm and properly setting their values in the endpoint detection recipe, periodic noise associated with carrier rotation and carrier oscillation can be effectively removed. This in turn permits reliable, closed-loop control of the CMP process.

    摘要翻译： 描述了在采用扭矩测量的CMP端点检测系统中降噪的方法。 转矩信号采用可调取样率和采样尺寸获得，并使用可调节尺寸的移动阵列进行平均。 通过在基于扭矩的端点控制算法中引入这三个可调整量，并在端点检测配方中正确设置它们的值，可以有效地消除与载波旋转和载波振荡相关的周期性噪声。 这反过来又允许对CMP工艺进行可靠的闭环控制。

    Chemical mechanical polishing endpoint process control
    53.
    发明授权
    Chemical mechanical polishing endpoint process control 有权
    化学机械抛光终点过程控制

    公开(公告)号：US06276987B1

    公开(公告)日：2001-08-21

    申请号：US09129103

    申请日：1998-08-04

    申请人： Leping Li ,  James A. Gilhooly ,  Clifford O. Morgan, III ,  Cong Wei

    发明人： Leping Li ,  James A. Gilhooly ,  Clifford O. Morgan, III ,  Cong Wei

    IPC分类号： B24B4900

    CPC分类号： B24B37/013 ,  B24B37/042

    摘要： Determination of an endpoint for removing a film from a wafer, by determining a first reference point removal time indicating when a breakthrough of the film has occurred, determining a second reference point removal time indicating when the film has been polished almost to completion, determining an additional removal time indicating an overpolishing interval, and adding the second reference point removal time with the additional removal time to get a total removal time to the endpoint.

    摘要翻译： 通过确定指示膜的突破何时发生的第一参考点去除时间确定指示胶片何时被抛光几乎完成的第二参考点去除时间来确定用于从晶片去除胶片的端点，确定 额外的移除时间指示过度抛光间隔，并且将第二参考点去除时间与额外的移除时间相加以获得到端点的总移除时间。

    Real-time control of chemical-mechanical polishing processing by monitoring ionization current
    54.
    发明授权
    Real-time control of chemical-mechanical polishing processing by monitoring ionization current 失效
    通过监测电离电流实时控制化学机械抛光加工

    公开(公告)号：US06251784B1

    公开(公告)日：2001-06-26

    申请号：US09206892

    申请日：1998-12-08

    申请人： Leping Li ,  James Albert Gilhooly ,  Clifford Owen Morgan ,  Cong Wei

    发明人： Leping Li ,  James Albert Gilhooly ,  Clifford Owen Morgan ,  Cong Wei

    IPC分类号： H01L21302

    CPC分类号： B24B37/013 ,  B24B49/10 ,  H01L21/31053

    摘要： A method and apparatus are described for detecting an endpoint of a film removal process in which a target film overlying a stopping film is removed. A chemical reaction product is generated from at least one of the target film and the stopping film; this chemical reaction product is converted to a separate product. The separate product is exposed to ionizing radiation. The ionization current generated by the radiation is monitored as the target film is removed. A change in the ionization current corresponds to a change in concentration of the separate product, thereby indicating the endpoint of the film removal process. In the particular case of removal of a silicon dioxide film overlying a silicon nitride film by chemical-mechanical polishing, the reaction product is ammonia extracted from the polishing slurry. The ammonia is converted to ammonium chloride by a reaction with hydrogen chloride vapor. As the ammonium chloride, entrained in a carrier gas, is pumped through a detection unit, a change in the concentration thereof is detected by monitoring a change in the ionization current generated by a source of alpha particles.

    摘要翻译： 描述了一种用于检测其中去除覆盖停止膜的目标膜的膜去除过程的端点的方法和装置。 从目标膜和停止膜中的至少一个产生化学反应产物; 该化学反应产物转化为单独的产物。 单独的产品暴露于电离辐射。 当去除靶膜时，监测由辐射产生的电离电流。 电离电流的变化对应于分离产物的浓度变化，从而表明膜去除过程的终点。 在通过化学机械抛光去除覆盖氮化硅膜的二氧化硅膜的特定情况下，反应产物是从抛光浆中提取的氨。 通过与氯化氢蒸气反应将氨转化成氯化铵。 由于夹带在载气中的氯化铵被泵送通过检测单元，通过监测由α粒子源产生的电离电流的变化来检测浓度的变化。

    Endpoint detection by chemical reaction and light scattering
    55.
    发明授权
    Endpoint detection by chemical reaction and light scattering 失效
    通过化学反应和光散射进行端点检测

    公开(公告)号：US06194230B1

    公开(公告)日：2001-02-27

    申请号：US09073601

    申请日：1998-05-06

    申请人： Leping Li ,  James Albert Gilhooly ,  Clifford Owen Morgan, III ,  Cong Wei

    发明人： Leping Li ,  James Albert Gilhooly ,  Clifford Owen Morgan, III ,  Cong Wei

    IPC分类号： H01L2100

    CPC分类号： B24B37/013 ,  B24B49/12 ,  H01L22/26

    摘要： Detection of the endpoint for removal of a target film overlying a stopping film by removing the target film with a process that selectively produces a gaseous chemical reaction product (for example ammonia when polishing a wafer with a nitride film in a slurry containing KOH) with one of the stopping film and the target film, mixing the gaseous chemical reaction product present with a separate gas to form solid particles, and monitoring the amount of the solid particles as the target film is removed. Also, detection of a substance at very low concentrations in a liquid, by extracting the substance present as a gas from the liquid, mixing the gas with another substance to form solid particles, and monitoring the amount of the solid particles to detect the substance.

    摘要翻译： 通过用选择性地产生气体化学反应产物（例如在含有KOH的浆料中用氮化物膜研磨晶片）的方法除去目标膜时，检测用于去除停止膜的目标膜的终点 的停止膜和目标膜，将存在的气态化学反应产物与单独的气体混合以形成固体颗粒，并且在去除目标膜时监测固体颗粒的量。 此外，通过从液体中提取作为气体存在的物质，将气体与另一物质混合以形成固体颗粒，并监测固体颗粒的量以检测物质，检测液体中浓度非常低的物质。

    Endpoint detection by chemical reaction
    56.
    发明授权
    Endpoint detection by chemical reaction 失效
    通过化学反应进行端点检测

    公开(公告)号：US06180422B2

    公开(公告)日：2001-01-30

    申请号：US09073602

    申请日：1998-05-06

    申请人： Leping Li ,  James Albert Gilhooly ,  Clifford Owen Morgan, III ,  Cong Wei ,  Chienfan Yu

    发明人： Leping Li ,  James Albert Gilhooly ,  Clifford Owen Morgan, III ,  Cong Wei ,  Chienfan Yu

    IPC分类号： H01L2100

    CPC分类号： B24B37/30 ,  B24B37/013 ,  H01L21/31053

    摘要： Detection of the endpoint for removal of a target film overlying a stopping film by removing the target film with a process that selectively generates a chemical reaction product (for example ammonia when polishing a wafer with a nitride film in a slurry containing KOH) with either the target or stopping film, and monitoring the level of chemical reaction product as the target film is removed. Also, detection of a substance at very low concentrations in a liquid, by extracting the substance present as a gas from the liquid and monitoring the gas to detect the substance.

    摘要翻译： 通过用选择性地产生化学反应产物（例如在含有KOH的浆料中用氮化物膜研磨晶片）的方法除去目标膜，检测用于去除覆盖停止膜的目标膜的终点， 目标或停止胶片，以及当去除靶膜时监测化学反应产物的含量。 此外，通过从液体中提取作为气体存在的物质并监测气体以检测物质，检测液体中浓度非常低的物质。