摘要:
A light emitting device includes a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, and a light extraction structure that extracts light from the light emitting structure. The light extraction structure includes at least a first light extraction zone and a second light extraction zone, where a period and/or size of first concave and/or convex structures of the first light extraction zone is different from a period and/or size of second concave and/or convex structures of the second light extraction zone.
摘要:
A light emitting device includes a first light extraction structure including a reflective layer and a pattern; an ohmic layer on the first light extraction structure; a second conductive type semiconductor layer on the ohmic layer; an active layer on the second conductive type semiconductor layer; and a first conductive type semiconductor layer on the active layer, wherein the pattern has a refractive index that is higher than that of air and lower than that of the second conductive type semiconductor layer.
摘要:
Disclosed are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes an electrode layer, a current density adjusting pattern on the electrode layer, and a light emitting structure on the electrode layer and the current density adjusting pattern. The light emitting structure includes a second conductive semiconductor layer, an active layer on the second conductive semiconductor layer, and a first conductive semiconductor layer on the active layer. The first conductive semiconductor layer includes an upper portion including a column pattern or a hole pattern serving as a structure of a resonant cavity and a lower portion having a thickness less than a thickness of the upper portion.
摘要:
Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a substrate, a light emitting structure comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, the light emitting structure being disposed on the substrate, a nonmetal pattern disposed between the substrate and the active layer, the nonmetal pattern being spaced from the substrate, and an air gap disposed on a side surface of the nonmetal pattern.
摘要:
Disclosed are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on, a light transmissive substrate having a refractive index lower than a refractive index of a compound semiconductor layer, and a mirror structure layer having a structure in which a first mirror layer having a first refractive index and a second mirror layer having a second refractive index different from the first refractive index are alternately stacked on each other. The first mirror layer has a thickness of W·λ/(4·n1·m), and the second mirror layer has a thickness of W·λ/(4·n2·m) in which the W represents a weight constant in a range of about 1.05 to about 1.25.
摘要:
Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a substrate, a light emitting structure comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, the light emitting structure being disposed on the substrate, a nonmetal pattern disposed between the substrate and the active layer, the nonmetal pattern being spaced from the substrate, and an air gap disposed on a side surface of the nonmetal pattern.
摘要:
Provided are a light emitting device and a light emitting device package. The light emitting device includes a transparent substrate, a light emitting structure, and a first reflection layer. The light emitting structure includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer that are disposed on a top surface of the substrate. The first reflection layer is disposed on a bottom surface of the substrate. The bottom surface of the substrate has a surface roughness of about 1 nm to about 15 nm in root mean square (RMS) value.
摘要:
Disclosed are a light emitting device, a method of manufacturing the same and a light emitting device package. The light emitting device of the embodiment includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer between the first and second conductive semiconductor layers; a fluorescent layer on the light emitting structure; and a light extracting structure on the fluorescent layer. The light extracting structure extracts light, which is generated in the light emitting structure and incident into an interfacial surface between the fluorescent layer and the light extracting structure, to an outside of the light emitting structure.
摘要:
A light emitting device and a light emitting device package including the same are provided. The light emitting device may include a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, a first electrode on the light emitting structure, the first electrode including a pattern, and a pad electrode on the first electrode.
摘要:
A light emitting device having a light extraction structure, which is capable of achieving an enhancement in light extraction efficiency and reliability, and a method for manufacturing the same. The light emitting device includes a semiconductor layer having a multi-layered structure including a light emission layer; and a light extraction structure formed on the semiconductor layer in a pattern having unit structures. Further, the wall of each of the unit structures is sloped at an angle of −45° to +45° from a virtual vertical line being parallel to a main light emitting direction of the light emitting device.