公开(公告)号：US09647173B2

公开(公告)日：2017-05-09

申请号：US13467882

申请日：2012-05-09

申请人： Sun Kyung Kim ,  Hyun Kyong Cho

发明人： Sun Kyung Kim ,  Hyun Kyong Cho

IPC分类号： H01L33/32 ,  H01L33/60 ,  H01L33/10 ,  H01L33/20 ,  H01L33/46

CPC分类号： H01L33/10 ,  H01L33/20 ,  H01L33/46 ,  H01L2933/0083

摘要： A light-emitting device comprises a first conductive type semiconductor layer; a second conductive type semiconductor layer under the first conductive type semiconductor layer; an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a nonconductive semiconductor layer on the first conductive type semiconductor layer and including a light extraction structure formed in the nonconductive semiconductor layer; a recess disposed from the nonconductive semiconductor layer to an upper portion of the first conductive type semiconductor layer; a first electrode layer on the upper portion of the first conductive type semiconductor layer; a second electrode layer under the second conductive type semiconductor layer.

公开(公告)号：US09276169B2

公开(公告)日：2016-03-01

申请号：US12908413

申请日：2010-10-20

申请人： Sun Kyung Kim

发明人： Sun Kyung Kim

IPC分类号： H01L33/20 ,  H01L33/38 ,  H01L33/14 ,  H01L33/22

CPC分类号： H01L33/20 ,  H01L33/145 ,  H01L33/22 ,  H01L33/382 ,  H01L2224/48091 ,  H01L2933/0083 ,  H01L2924/00014

摘要： Provided are a light emitting device, a light emitting device package, and a lighting system including the same. The light emitting device includes a second electrode layerelectrode, a light emitting structure, a texture, and a current spreading layer. The light emitting structure is on second electrode layerelectrode, and includes a second conductive type semiconductor layer, an active layer on the second conductive type semiconductor layer, and a first conductive type semiconductor layer on the active layer. The texture is on at least one portion of the light emitting structure. The current spreading layer is on the light emitting structure provided with the texture.

摘要翻译： 提供了一种发光器件，发光器件封装以及包括该发光器件的照明系统。 发光器件包括第二电极层间电极，发光结构，纹理和电流扩展层。 发光结构在第二电极层间电极上，并且包括第二导电类型半导体层，第二导电类型半导体层上的有源层和有源层上的第一导电类型半导体层。 纹理位于发光结构的至少一部分上。 电流扩散层位于具有纹理的发光结构上。

公开(公告)号：US08624283B2

公开(公告)日：2014-01-07

申请号：US13092287

申请日：2011-04-22

申请人： Sun Kyung Kim

发明人： Sun Kyung Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/405 ,  H01L33/22 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

摘要： A light emitting device is provided. The light emitting device includes a first electrode layer, a light emitting structure, and a second electrode layer. The light emitting structure is formed on the first electrode layer to emit blue series light having a main peak wavelength region of about 430 nm to about 470 nm, and includes a light extraction structure. The second electrode layer includes a first layer, which is formed of a metal material different from a wavelength of the blue series light in Plasmon frequencies, on the light extraction structure.

摘要翻译： 提供了一种发光器件。 发光器件包括第一电极层，发光结构和第二电极层。 发光结构形成在第一电极层上，以发射具有约430nm至约470nm的主峰波长区域的蓝色串联光，并且包括光提取结构。 第二电极层包括在光提取结构上由与等离子体频率的蓝色系列光的波长不同的金属材料形成的第一层。

公开(公告)号：US08604500B2

公开(公告)日：2013-12-10

申请号：US13031825

申请日：2011-02-22

申请人： Hyun Min Choi ,  Sun Kyung Kim ,  Woon Kyung Choi

发明人： Hyun Min Choi ,  Sun Kyung Kim ,  Woon Kyung Choi

IPC分类号： H01L33/46 ,  B82Y20/00

CPC分类号： H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L2224/48091 ,  H01L2924/00014

摘要： Provided are a light emitting device and a light emitting device package. The light emitting device includes a transparent substrate, a light emitting structure, and a first reflection layer. The light emitting structure includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer that are disposed on a top surface of the substrate. The first reflection layer is disposed on a bottom surface of the substrate. The bottom surface of the substrate has a surface roughness of about 1 nm to about 15 nm in root mean square (RMS) value.

摘要翻译： 提供了一种发光器件和发光器件封装。 发光器件包括透明衬底，发光结构和第一反射层。 发光结构包括设置在基板的顶表面上的第一导电类型半导体层，有源层和第二导电类型半导体层。 第一反射层设置在基板的底面上。 基板的底表面的均方根（RMS）值具有约1nm至约15nm的表面粗糙度。

公开(公告)号：US08519418B2

公开(公告)日：2013-08-27

申请号：US13020038

申请日：2011-02-03

申请人： Sun Kyung Kim

发明人： Sun Kyung Kim

IPC分类号： H01L33/00 ,  F21V7/00 ,  F21V5/00 ,  F21V1/00 ,  F21V7/04

CPC分类号： H01L33/44 ,  H01L33/486 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2933/0091 ,  H01L2924/00

摘要： Disclosed are a light emitting device package and a lighting system. The light emitting device package includes a sub-mount including a cavity, a light emitting device chip provided in the cavity, an electrode electrically connected to the light emitting chip, a reflective layer formed on a surface of the cavity, a dielectric pattern on the reflective layer, and an encapsulant filled in the cavity.

摘要翻译： 公开了一种发光器件封装和照明系统。 发光器件封装包括：包括空腔的子座，设置在空腔中的发光器件芯片，电连接到发光芯片的电极，形成在空腔表面上的反射层， 反射层和填充在空腔中的密封剂。

公开(公告)号：US08421110B2

公开(公告)日：2013-04-16

申请号：US13324785

申请日：2011-12-13

申请人： Kyoung Woo Jo ,  Sun Kyung Kim ,  Woon Kyung Choi

发明人： Kyoung Woo Jo ,  Sun Kyung Kim ,  Woon Kyung Choi

IPC分类号： H01L33/58

CPC分类号： H01L33/58 ,  H01L33/0095 ,  H01L33/405 ,  H01L33/44 ,  H01L33/50 ,  H01L33/508 ,  H01L2224/48091 ,  H01L2924/01055 ,  H01L2924/01068 ,  H01L2924/01322 ,  H01L2924/12032 ,  H01L2933/0083 ,  H01L2924/00014 ,  H01L2924/00

摘要： Disclosed are a light emitting device, a method of manufacturing the same and a light emitting device package. The light emitting device of the embodiment includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer between the first and second conductive semiconductor layers; a fluorescent layer on the light emitting structure; and a light extracting structure on the fluorescent layer. The light extracting structure extracts light, which is generated in the light emitting structure and incident into an interfacial surface between the fluorescent layer and the light extracting structure, to an outside of the light emitting structure.

摘要翻译： 公开了发光器件，其制造方法和发光器件封装。 本实施例的发光器件包括发光结构，其包括第一导电半导体层，第二导电半导体层和在第一和第二导电半导体层之间的有源层; 在发光结构上的荧光层; 以及荧光层上的光提取结构。 光提取结构提取在发光结构中产生并入射到荧光层和光提取结构之间的界面的光到发光结构的外部。

公开(公告)号：US08049239B2

公开(公告)日：2011-11-01

申请号：US12622271

申请日：2009-11-19

申请人： Sun Kyung Kim ,  Jin Wook Lee ,  Hyun Kyong Cho

发明人： Sun Kyung Kim ,  Jin Wook Lee ,  Hyun Kyong Cho

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/22 ,  H01L2933/0083

摘要： Provided are a light emitting device and a method of manufacturing the same. A light emitting device includes an active layer; a first conductive semiconductor layer on the active layer; a second conductive semiconductor layer on the active layer so that the active layer is disposed between the first and second conductive semiconductor layers; and a photonic crystal structure comprising a first light extraction pattern on the first conductive semiconductor layer having a first period, and second light extraction pattern on the first conductive semiconductor layer having a second period, the first period being greater than λ/n, and the second period being identical to or smaller than λ/n, where n is a refractive index of the first conductive semiconductor layer, and λ is a wavelength of light emitted from the active layer.

摘要翻译： 提供一种发光器件及其制造方法。 发光器件包括有源层; 在所述有源层上的第一导电半导体层; 在所述有源层上的第二导电半导体层，使得所述有源层设置在所述第一和第二导电半导体层之间; 以及光子晶体结构，其包括具有第一周期的所述第一导电半导体层上的第一光提取图案，以及在所述第一导电半导体层上具有第二周期的第二光提取图案，所述第一周期大于λ/ n， 第二周期等于或小于λ/ n，其中n是第一导电半导体层的折射率，λ是从有源层发射的光的波长。

公开(公告)号：US20110260188A1

公开(公告)日：2011-10-27

申请号：US13092275

申请日：2011-04-22

申请人： Hyun Min Choi ,  Sun Kyung Kim ,  Woon Kyung CHOI

发明人： Hyun Min Choi ,  Sun Kyung Kim ,  Woon Kyung CHOI

IPC分类号： H01L33/48

CPC分类号： H01L33/46 ,  H01L33/22 ,  H01L33/382 ,  H01L2224/48091 ,  H01L2924/00014

摘要： Disclosed are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on, a light transmissive substrate having a refractive index lower than a refractive index of a compound semiconductor layer, and a mirror structure layer having a structure in which a first mirror layer having a first refractive index and a second mirror layer having a second refractive index different from the first refractive index are alternately stacked on each other. The first mirror layer has a thickness of W·λ/(4·n1·m), and the second mirror layer has a thickness of W·λ(4·n2·m) in which the W represents a weight constant in a range of about 1.05 to about 1.25.

摘要翻译： 公开了一种发光器件，发光器件封装和照明系统。 发光器件包括在其上具有折射率低于化合物半导体层的折射率的透光基板上的第一导电半导体层，有源层和第二导电半导体层的发光结构，以及反射镜 具有其中具有第一折射率的第一镜层和具有不同于第一折射率的第二折射率的第二镜层的结构的结构层彼此交替堆叠。 第一镜层的厚度为W·λ/（4·n1·m），第二镜层的厚度为W·λ（4·n2·m），W表示重量常数范围 约1.05至约1.25。

公开(公告)号：US08008103B2

公开(公告)日：2011-08-30

申请号：US12637653

申请日：2009-12-14

申请人： Hyun Kyong Cho ,  Sun Kyung Kim ,  Jun Ho Jang

发明人： Hyun Kyong Cho ,  Sun Kyung Kim ,  Jun Ho Jang

IPC分类号： H01L21/00 ,  H01L21/18

CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L33/48 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2933/0083 ,  Y10S438/977 ,  H01L2924/00014 ,  H01L2924/00

摘要： A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.

公开(公告)号：US20110198642A1

公开(公告)日：2011-08-18

申请号：US12954153

申请日：2010-11-24

申请人： Sun Kyung Kim

发明人： Sun Kyung Kim

IPC分类号： H01L33/46 ,  B82Y99/00

CPC分类号： H01L33/38 ,  H01L33/405 ,  H01L2224/48091 ,  H01L2924/12032 ,  H01L2933/0083 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer; and a plurality of polarizers, wherein a distance between a polarizer and an adjacent polarizer along a first direction is different from the polarizer and an adjacent polarizer in a second direction.

摘要翻译： 发光器件包括第一导电类型半导体层，第二导电类型半导体层和在第一导电类型半导体层和第二导电类型半导体层之间的有源层; 以及多个偏振器，其中沿着第一方向的偏振器和相邻偏振器之间的距离在第二方向上不同于偏振器和相邻的偏振器。