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137 条记录 (耗时 0.032 秒)

    Magnetic random access memory devices, methods of driving the same and data writing and reading methods for the same
    57.
    发明授权
    Magnetic random access memory devices, methods of driving the same and data writing and reading methods for the same 有权
    磁性随机存取存储器件，驱动方法和数据写入和读取方法相同

    公开(公告)号：US08218362B2

    公开(公告)日：2012-07-10

    申请号：US12385124

    申请日：2009-03-31

    申请人： In-jun Hwang ,  Sun-ae Seo ,  Kee-won Kim ,  Kwang-seok Kim

    发明人： In-jun Hwang ,  Sun-ae Seo ,  Kee-won Kim ,  Kwang-seok Kim

    IPC分类号： G11C11/14 ,  G11C11/416 ,  G11C29/82

    CPC分类号： H01L27/228 ,  G11C11/161 ,  H01L43/08

    摘要： A magnetic memory device includes a lower structure or an antiferromagnetic layer, a pinned layer, an information storage layer, and a free layer formed on the lower structure or the antiferromagnetic layer. In a method of operating a magnetic memory device, information from the storage information layer is read or stored after setting the magnetization of the free layer in a first magnetization direction. The information is stored when the first magnetization direction is opposite to a magnetization direction of the pinned layer, but is read when the first magnetization direction is the same as the magnetization direction of the pinned layer.

    摘要翻译： 磁存储器件包括下结构或反铁磁层，钉扎层，信息存储层和形成在下结构或反铁磁层上的自由层。 在操作磁存储器件的方法中，在将自由层的磁化设定为第一磁化方向之后，来自存储信息层的信息被读取或存储。 当第一磁化方向与被钉扎层的磁化方向相反时，存储信息，但是当第一磁化方向与被钉扎层的磁化方向相同时被读取。

    Graphene electronic device and method of fabricating the same
    59.
    发明申请
    Graphene electronic device and method of fabricating the same 失效
    石墨烯电子器件及其制造方法

    公开(公告)号：US20110210314A1

    公开(公告)日：2011-09-01

    申请号：US12929817

    申请日：2011-02-17

    申请人： Hyun-jong Chung ,  Seung-jae Baek ,  Sun-ae Seo ,  Yun-sung Woo ,  Jin-seong Heo ,  David Seo

    发明人： Hyun-jong Chung ,  Seung-jae Baek ,  Sun-ae Seo ,  Yun-sung Woo ,  Jin-seong Heo ,  David Seo

    IPC分类号： H01L29/66 ,  H01L21/335

    CPC分类号： H01L29/66045 ,  H01L23/522 ,  H01L27/0688 ,  H01L27/124 ,  H01L29/1606 ,  H01L29/45 ,  H01L29/7781 ,  H01L29/78684 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A graphene electronic device may include a silicon substrate, connecting lines on the silicon substrate, a first electrode and a second electrode on the silicon substrate, and an interlayer dielectric on the silicon substrate. The interlayer dielectric may be configured to cover the connecting lines and the first and second electrodes and the interlayer dielectric may be further configured to expose at least a portion of the first and second electrodes. The graphene electronic device may further include an insulating layer on the interlayer dielectric and a graphene layer on the insulating layer, the graphene layer having a first end and a second end. The first end of the graphene layer may be connected to the first electrode and the second end of the graphene layer may be connected to the second electrode.

    摘要翻译： 石墨烯电子器件可以包括硅衬底，硅衬底上的连接线，硅衬底上的第一电极和第二电极以及硅衬底上的层间电介质。 层间电介质可以被配置为覆盖连接线，并且第一和第二电极和层间电介质可以被进一步配置为暴露第一和第二电极的至少一部分。 所述石墨烯电子器件还可以包括在所述层间电介质上的绝缘层和所述绝缘层上的石墨烯层，所述石墨烯层具有第一端和第二端。 石墨烯层的第一端可以连接到第一电极，并且石墨烯层的第二端可以连接到第二电极。