公开(公告)号：US5373164A

公开(公告)日：1994-12-13

申请号：US198548

申请日：1994-02-18

申请人： Victor M. Benveniste

发明人： Victor M. Benveniste

IPC分类号： C23C14/48 ,  H01J37/147 ,  H01J37/317 ,  H01L21/265

CPC分类号： H01J37/3171 ,  H01J37/1477

摘要： An ion implantation system including structure to create a dipole field through which the beam passes. The strength and direction of the dipole field is controlled to adjust an angle of impact between the workpiece, typically a semi-conductor wafer and the ion beam. A side-to-side scanning motion is used to provide controlled doping of an entire semiconductor wafer.

摘要翻译： 离子注入系统，其包括用于产生光束通过的偶极场的结构。 控制偶极场的强度和方向以调节工件（通常为半导体晶片和离子束）之间的冲击角度。 使用侧到侧扫描运动来提供整个半导体晶片的受控掺杂。

公开(公告)号：US5218210A

公开(公告)日：1993-06-08

申请号：US837277

申请日：1992-02-18

申请人： Edward K. McIntyre, Jr. ,  Victor M. Benveniste ,  Walter Hrynyk

发明人： Edward K. McIntyre, Jr. ,  Victor M. Benveniste ,  Walter Hrynyk

IPC分类号： C23C14/48 ,  C23C14/54 ,  H01J37/08 ,  H01J37/317 ,  H01L21/265

CPC分类号： H01J37/3172 ,  H01J37/08

摘要： An ion beam source. The source includes multiple apertures bounded in close proximity by an extraction electrode for extracting positively charged ions from the source. Ions exiting the source combine downstream to form a broad beam which, in one utilization of the invention, is used for ion beam treatment of a silicon wafer. Individual electrodes in close proximity to the extraction electrode can be biased to either inhibit or allow backstreaming of neutralizing electrons from beam portions close to the source back to the extraction electrode. This allows the beam portion to become deneutralized and, therefore, unstable. The unstable beam is diminished in intensity since positively charged ions within that beam portion exit the beam. An isolation plate separates beam portions in close proximity to the extraction electrode to inhibit beam crosstalk and an additional suppression electrode common to all beam portions is controllably biased to further enhance control over beam portion intensity. In a typical application, the beam is a circular beam and intensity control is maintained to assure common intensity for a given radii from the beam center.

公开(公告)号：US07748344B2

公开(公告)日：2010-07-06

申请号：US10702368

申请日：2003-11-06

申请人： William F. DiVergilio ,  Victor M. Benveniste ,  Peter L. Kellerman

发明人： William F. DiVergilio ,  Victor M. Benveniste ,  Peter L. Kellerman

IPC分类号： C23C16/452 ,  C23C16/507 ,  C23C16/509 ,  C23C16/517 ,  C23C16/505 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： H01J37/321

摘要： An ion shower system is disclosed and comprises a plasma source operable to generate source gas ions within a chamber. The plasma source further comprises a plurality of conductor segments and a plurality of capacitors, wherein the conductor segments are serially connected through the plurality of capacitors. The plasma source further comprises an antenna drive circuit coupled to the plurality of conductor segments that provides power to the conductor segments and capacitors at a predetermined frequency. The ion shower system also comprises a source gas inlet that provides a source gas to the chamber. The conductor segments, capacitors and antenna drive circuit cooperatively provide energy to charged particles in the chamber, thereby energizing the charged particles and generating a plasma comprising source gas ions and electrons within the chamber due to ionizing collisions between the energized charged particles and the source gas.

摘要翻译： 公开了一种离子淋浴系统，其包括可操作以在室内产生源气体离子的等离子体源。 等离子体源还包括多个导体段和多个电容器，其中导体段通过多个电容器串联连接。 等离子体源还包括耦合到多个导体段的天线驱动电路，其以预定频率向导体段和电容器提供功率。 离子淋浴系统还包括向腔室提供源气体的源气体入口。 导体段，电容器和天线驱动电路协同地向腔室中的带电粒子提供能量，从而由于通电的带电粒子和源气体之间的电离碰撞，激发带电粒子并产生包含源室气体离子和电子的等离子体 。

公开(公告)号：US07723705B2

公开(公告)日：2010-05-25

申请号：US12141570

申请日：2008-06-18

申请人： Victor M. Benveniste

发明人： Victor M. Benveniste

IPC分类号： H01J37/317 ,  H01J37/244

CPC分类号： H01J37/3171

摘要： Techniques for measuring ion beam emittance are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for measuring ion beam emittance. The apparatus may comprise a measurement assembly comprising a first mask, a second mask, and a pivot axis, such that the measurement assembly rotates about the pivot axis in order to scan an ion beam using either the first mask or the second mask to measure ion beam emittance for providing a measure of ion beam uniformity.

摘要翻译： 公开了用于测量离子束发射率的技术。 在一个特定的示例性实施例中，可以将技术实现为用于测量离子束发射率的装置。 该装置可以包括包括第一掩模，第二掩模和枢转轴线的测量组件，使得测量组件围绕枢转轴线旋转，以便使用第一掩模或第二掩模来扫描离子束以测量离子 光束发射率，用于提供离子束均匀性的测量。

公开(公告)号：US07598505B2

公开(公告)日：2009-10-06

申请号：US11074434

申请日：2005-03-08

申请人： Victor M. Benveniste

发明人： Victor M. Benveniste

IPC分类号： G21K5/00

CPC分类号： H01J37/3171

摘要： The present invention discloses systems and methods for generating low energy, high current ion beams by scaling beamline dimensions and employing multiple beamlines. An array of beamlets is generated by an ion source. The beamlets then pass through a mass analysis module that permits selected ions to pass while blocking other ions and/or particles. The selected ions can then be accelerated to a desired energy level. Subsequently, the beamlets are diverged in horizontal and vertical directions to form a single low energy, high current ion beam.

摘要翻译： 本发明公开了通过缩放束线尺寸并采用多束波束来产生低能量，高电流离子束的系统和方法。 子束的阵列由离子源产生。 然后，子束通过质量分析模块，其允许选择的离子通过，同时阻挡其他离子和/或颗粒。 然后可以将选定的离子加速到所需的能级。 随后，子束在水平和垂直方向上发散，以形成单个低能量的高电流离子束。

公开(公告)号：US07267520B2

公开(公告)日：2007-09-11

申请号：US11099022

申请日：2005-04-05

申请人： Peter L. Kellerman ,  Victor M. Benveniste ,  Kourosh Saadatmand ,  Mehran Asdigha ,  Douglas A. Brown

发明人： Peter L. Kellerman ,  Victor M. Benveniste ,  Kourosh Saadatmand ,  Mehran Asdigha ,  Douglas A. Brown

IPC分类号： B66F9/00

CPC分类号： H01L21/67069 ,  H01J2237/20228 ,  H01J2237/31701

摘要： The present invention is directed to a scanning apparatus and method for processing a workpiece, wherein the scanning apparatus comprises a wafer arm and moving arm fixedly coupled to one another, wherein the wafer arm and moving arm are operable to rotate about a first axis. An end effector, whereon the workpiece resides, is coupled to the wafer arm. A rotational shaft couples the wafer arm and moving arm to a first actuator, wherein the first actuator provides a rotational force to the shaft. A momentum balance mechanism is coupled to the shaft and is operable to generally reverse the rotational direction of the shaft. The momentum balance mechanism comprises one or more fixed spring elements operable to provide a force to a moving spring element coupled to the moving arm. A controller is further operable to maintain a generally constant translational velocity of the end effector within a predetermined scanning range.

摘要翻译： 本发明涉及一种用于处理工件的扫描装置和方法，其中扫描装置包括彼此固定地连接的晶片臂和移动臂，其中晶片臂和移动臂可操作以围绕第一轴线旋转。 工件所在的端部执行器与晶片臂连接。 旋转轴将晶片臂和移动臂联接到第一致动器，其中第一致动器向轴提供旋转力。 动量平衡机构联接到轴上并且可操作地大体上使轴的旋转方向反转。 动量平衡机构包括一个或多个固定弹簧元件，其可操作以向耦合到移动臂的移动弹簧元件提供力。 控制器还可操作以将末端执行器的大致恒定的平移速度保持在预定扫描范围内。

公开(公告)号：US07078707B1

公开(公告)日：2006-07-18

申请号：US11029052

申请日：2005-01-04

申请人： Victor M. Benveniste ,  Peter L. Kellerman ,  William F. DiVergilio

发明人： Victor M. Benveniste ,  Peter L. Kellerman ,  William F. DiVergilio

IPC分类号： G21K5/10 ,  H01J37/08

CPC分类号： H01J37/3171 ,  H01J2237/31703

摘要： Methods are provided for calibrating an ion beam scanner in an ion implantation system, comprising measuring a plurality of initial current density values at a plurality of locations along a scan direction, where the values individually correspond to one of a plurality of initial voltage scan intervals and one of a corresponding plurality of initial scan time values, creating a system of linear equations based on the measured initial current density values and the initial voltage scan intervals, and determining a set of scan time values that correspond to a solution to the system of linear equations that reduces current density profile deviations. A calibration system is provided for calibrating an ion beam scanner in an ion implantation system, comprising a dosimetry system and a control system.

摘要翻译： 提供了用于在离子注入系统中校准离子束扫描器的方法，包括在沿着扫描方向的多个位置处测量多个初始电流密度值，其中所述值分别对应于多个初始电压扫描间隔中的一个，以及 相应的多个初始扫描时间值中的一个，基于测量的初始电流密度值和初始电压扫描间隔创建线性方程组，并且确定与线性系统的解的对应的一组扫描时间值 减小电流密度分布偏差的方程式。 提供校准系统用于在离子注入系统中校准离子束扫描器，包括剂量测定系统和控制系统。

公开(公告)号：US07033443B2

公开(公告)日：2006-04-25

申请号：US10402809

申请日：2003-03-28

申请人： Peter L. Kellerman ,  Victor M. Benveniste ,  Frederick M. Carlson

发明人： Peter L. Kellerman ,  Victor M. Benveniste ,  Frederick M. Carlson

IPC分类号： H01L21/00 ,  C23C16/00

CPC分类号： H01L21/68721 ,  C23C16/4586 ,  C23C16/463 ,  H01L21/67109 ,  H01L21/6875 ,  Y10T279/23

摘要： The present invention is directed to a semiconductor thermal processing apparatus and a method for thermally cooling a semiconductor substrate. According to one aspect of the present invention, a gas-cooled clamp and associated method is disclosed which provides cooling of a substrate by thermal conduction generally in the free molecular regime. The gas-cooled clamp comprises a clamping plate having a plurality of protrusions that define gaps therebetween, wherein a distance or depth of the gaps are associated with a mean free path of the cooling gas therein. The gas-cooled clamp further comprises a pressure control system operable to control a backside pressure of the cooling gas within the plurality of gaps to thus control a heat transfer coefficient of the cooling gas, wherein the heat transfer coefficient of the cooling gas is primarily a function of the pressure and substantially independent of the gap distance.

摘要翻译： 本发明涉及半导体热处理装置和半导体基板的热冷却方法。 根据本发明的一个方面，公开了一种气冷夹和相关方法，其通常通过自由分子状态的热传导来提供衬底的冷却。 气冷夹具包括夹板，该夹板具有限定其间的间隙的多个突起，其中间隙的距离或深度与其中的冷却气体的平均自由路径相关联。 气冷夹具还包括压力控制系统，其可操作以控制多个间隙内的冷却气体的背侧压力，从而控制冷却气体的传热系数，其中冷却气体的传热系数主要为 压力的函数和基本上与间隙距离无关。

公开(公告)号：US07019314B1

公开(公告)日：2006-03-28

申请号：US10967855

申请日：2004-10-18

申请人： Victor M. Benveniste ,  Peter L. Kellerman

发明人： Victor M. Benveniste ,  Peter L. Kellerman

IPC分类号： H01L21/324 ,  H01J37/317 ,  H01J49/30

CPC分类号： H01J37/3171 ,  H01J37/147

摘要： Systems and methods are provided for focusing a scanned ion beam in an ion implanter. A beam focusing system is provided, comprising first and second magnets providing corresponding magnetic fields that cooperatively provide a magnetic focusing field having a time-varying focusing field center generally corresponding to a time-varying beam position of a scanned ion beam along a scan direction. Methods are presented, comprising providing a focusing field having a focusing field center in the scan plane, and dynamically adjusting the focusing field such that the focusing field center is generally coincident with a time-varying beam position of the scanned ion beam along the scan direction.

摘要翻译： 提供了将扫描离子束聚焦在离子注入机中的系统和方法。 提供了一种束聚焦系统，包括提供相应磁场的第一和第二磁体，其协作地提供磁聚焦场，其具有通常对应于扫描离子束沿扫描方向的时变束位置的时变聚焦场中心。 提出了方法，其包括提供在扫描平面中具有聚焦场中心的聚焦场，以及动态地调整聚焦场，使得聚焦场中心大体上与扫描离子束沿着扫描方向的时变束位置重合 。

公开(公告)号：US06759665B2

公开(公告)日：2004-07-06

申请号：US09865155

申请日：2001-05-24

申请人： Victor M. Benveniste ,  William F. DiVergilio ,  John Z. Ye

发明人： Victor M. Benveniste ,  William F. DiVergilio ,  John Z. Ye

IPC分类号： H01J37317

CPC分类号： H01J37/32623 ,  H01J37/05 ,  H01J37/3171 ,  H01J37/32678

摘要： An apparatus and method for providing a low energy, high current ion beam for ion implantation applications are disclosed. The apparatus includes a mass analysis magnet mounted in a passageway along the path of an ion beam, and a magnetic device adapted to provide a multi-cusped magnetic field in the passageway, which may include a plurality of magnets mounted along at least a portion of the passageway. The magnets may cooperatively interact to provide a multi-cusped magnetic field along at least a portion of the passageway. The multi-cusped magnetic field may be superimposed on the dipole field at a specified field strength in a region of the mass analyzer passageway for a given low energy ion beam. The invention thus provides enhancement of beam plasma within a mass analyzer dipole magnetic field for low energy ion beams without the introduction of externally generated plasma. The invention further includes a method of providing ion beam containment in a low energy ion implantation system, as well as an ion implantation system.

摘要翻译： 公开了一种用于提供用于离子注入应用的低能量高电流离子束的装置和方法。 该设备包括安装在沿着离子束路径的通道中的质量分析磁体和适于在通道中提供多通道磁场的磁性装置，该磁性装置可以包括沿着至少一部分 通道。 磁体可以协同地相互作用以沿着通道的至少一部分提供多脉冲磁场。 对于给定的低能量离子束，多质量磁场可以在质量分析器通道的区域中以指定的场强叠加在偶极子场上。 因此，本发明在低能量离子束的质量分析器偶极磁场内提供束等离子体的增强，而不引入外部产生的等离子体。 本发明还包括一种在低能离子注入系统中提供离子束容纳的方法以及离子注入系统。