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1.发明授权公开(公告)号：US07748344B2
公开(公告)日：2010-07-06
申请号：US10702368
申请日：2003-11-06
IPC分类号： C23C16/452 , C23C16/507 , C23C16/509 , C23C16/517 , C23C16/505 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： H01J37/321
摘要： An ion shower system is disclosed and comprises a plasma source operable to generate source gas ions within a chamber. The plasma source further comprises a plurality of conductor segments and a plurality of capacitors, wherein the conductor segments are serially connected through the plurality of capacitors. The plasma source further comprises an antenna drive circuit coupled to the plurality of conductor segments that provides power to the conductor segments and capacitors at a predetermined frequency. The ion shower system also comprises a source gas inlet that provides a source gas to the chamber. The conductor segments, capacitors and antenna drive circuit cooperatively provide energy to charged particles in the chamber, thereby energizing the charged particles and generating a plasma comprising source gas ions and electrons within the chamber due to ionizing collisions between the energized charged particles and the source gas.
摘要翻译： 公开了一种离子淋浴系统，其包括可操作以在室内产生源气体离子的等离子体源。 等离子体源还包括多个导体段和多个电容器，其中导体段通过多个电容器串联连接。 等离子体源还包括耦合到多个导体段的天线驱动电路，其以预定频率向导体段和电容器提供功率。 离子淋浴系统还包括向腔室提供源气体的源气体入口。 导体段，电容器和天线驱动电路协同地向腔室中的带电粒子提供能量，从而由于通电的带电粒子和源气体之间的电离碰撞，激发带电粒子并产生包含源室气体离子和电子的等离子体 。
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2.发明授权Ion beam scanning control methods and systems for ion implantation uniformity 有权离子束扫描控制方法和离子注入系统的均匀性公开(公告)号：US07078707B1
公开(公告)日：2006-07-18
申请号：US11029052
申请日：2005-01-04
CPC分类号： H01J37/3171 , H01J2237/31703
摘要： Methods are provided for calibrating an ion beam scanner in an ion implantation system, comprising measuring a plurality of initial current density values at a plurality of locations along a scan direction, where the values individually correspond to one of a plurality of initial voltage scan intervals and one of a corresponding plurality of initial scan time values, creating a system of linear equations based on the measured initial current density values and the initial voltage scan intervals, and determining a set of scan time values that correspond to a solution to the system of linear equations that reduces current density profile deviations. A calibration system is provided for calibrating an ion beam scanner in an ion implantation system, comprising a dosimetry system and a control system.
摘要翻译： 提供了用于在离子注入系统中校准离子束扫描器的方法，包括在沿着扫描方向的多个位置处测量多个初始电流密度值，其中所述值分别对应于多个初始电压扫描间隔中的一个，以及 相应的多个初始扫描时间值中的一个，基于测量的初始电流密度值和初始电压扫描间隔创建线性方程组，并且确定与线性系统的解的对应的一组扫描时间值 减小电流密度分布偏差的方程式。 提供校准系统用于在离子注入系统中校准离子束扫描器，包括剂量测定系统和控制系统。
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3.发明授权Thin magnetron structures for plasma generation in ion implantation systems 失效用于离子注入系统中等离子体生成的薄磁控管结构公开(公告)号：US06879109B2
公开(公告)日：2005-04-12
申请号：US10600775
申请日：2003-06-20
IPC分类号： H01J37/317 , H05H1/24
CPC分类号： H01J37/32082 , H01J37/3171 , H01J37/3266 , H01J2237/0041
摘要： A plasma generator for space charge neutralization of an ion beam is disclosed and resides within an ion implantation system operable to generate an ion beam and direct the ion beam along a beamline path. The plasma generator comprises an electric field generation system operable to generate an electric field in a portion of the beamline path, and a magnetic field generation system operable to generate a magnetic field in the portion of the beamline path, wherein the magnetic field is perpendicular to the electric field. The plasma generator further comprises a gas source operable to introduce a gas in a region occupied by the electric field and the magnetic field. Electrons in the region move in the region due to the electric field and the magnetic field, respectively, and at least some of the electrons collide with the gas in the region to ionize a portion of the gas, thereby generating a plasma in the region.
摘要翻译： 公开了一种用于离子束的空间电荷中和的等离子体发生器，并且位于离子注入系统内，可操作以产生离子束并沿着束线路径引导离子束。 等离子体发生器包括可操作以在束线路径的一部分中产生电场的电场产生系统，以及可操作以在束线路径的该部分中产生磁场的磁场产生系统，其中磁场垂直于 电场。 等离子体发生器还包括可操作以在由电场和磁场占据的区域中引入气体的气体源。 该区域中的电子分别由于电场和磁场而在该区域内移动，并且至少一些电子与该区域中的气体碰撞以使一部分气体离子化，从而在该区域中产生等离子体。
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公开(公告)号：US06664548B2
公开(公告)日：2003-12-16
申请号：US10209397
申请日：2002-07-31
IPC分类号： H01J2706
CPC分类号： H01J37/08 , H01J2237/0815 , H01J2237/083 , H01J2237/0835 , H01J2237/31701
摘要： An ion source is disclosed having an elongated slit for providing a ribbon ion beam for use in an ion implantation system. The source comprises a coaxial inductive coupling antenna for RF excitation of plasma within a cylindrical source housing, as well as circumferential magnets disposed within the housing for generating azimuthal multi-cusped magnetic fields for plasma confinement. Also disclosed is a liner for the housing interior providing thermal barrier between the plasma and the outer housing wall so as to mitigate or reduce condensation within the plasma confinement chamber.
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5.发明授权公开(公告)号：US06414329B1
公开(公告)日：2002-07-02
申请号：US09625153
申请日：2000-07-25
IPC分类号： H01J37317
CPC分类号： H01J37/32623 , H01J37/05 , H01J37/3171 , H01J37/32678
摘要： An apparatus and method for providing a low energy, high current ion beam for ion implantation applications are disclosed. The apparatus includes a mass analysis magnet mounted in a passageway along the path of an ion beam, a power source adapted to provide an electric field in the passageway, and a magnetic device adapted to provide a multi-cusped magnetic field in the passageway, which may include a plurality of magnets mounted along at least a portion of the passageway. The power source and the magnets may cooperatively interact to provide an electron cyclotron resonance (ECR) condition along at least a portion of the passageway. The multi-cusped magnetic field may be superimposed on the dipole field at a specified field strength in a region of the mass analyzer passageway to interact with an electric field of a known RF or microwave frequency for a given low energy ion beam. The invention further comprises a mass analyzer waveguide adapted to couple the electric field to the beam plasma consistently along the length of the mass analyzer passageway to thereby improve the creation of the ECR condition. The invention thus provides enhancement of beam plasma within a mass analyzer dipole magnetic field for low energy ion beams without the introduction of externally generated plasma. The invention further includes a method of providing ion beam containment in a low energy ion implantation system, as well as an ion implantation system.
摘要翻译： 公开了一种用于提供用于离子注入应用的低能量高电流离子束的装置和方法。 该装置包括安装在沿着离子束的路径的通道中的质量分析磁体，适于在通道中提供电场的电源以及适于在通道中提供多通道磁场的磁性装置，其中 可以包括沿通道的至少一部分安装的多个磁体。 电源和磁体可以协同地相互作用以沿着通道的至少一部分提供电子回旋共振（ECR）状态。 多质量磁场可以在质量分析器通道的区域中以指定的场强叠加在偶极子场上，以与给定的低能离子束的已知RF或微波频率的电场相互作用。 本发明还包括质量分析器波导，其适于沿着质量分析器通道的长度一致地将电场耦合到束等离子体，从而改善ECR条件的产生。 因此，本发明在低能量离子束的质量分析器偶极磁场内提供束等离子体的增强，而不引入外部产生的等离子体。 本发明还包括一种在低能离子注入系统中提供离子束容纳的方法以及离子注入系统。
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6.发明授权Glass-like insulator for electrically isolating electrodes from ion implanter housing 有权用于将电极与离子注入机外壳电隔离的玻璃状绝缘体公开(公告)号：US06291828B1
公开(公告)日：2001-09-18
申请号：US09469068
申请日：1999-12-21
申请人： Kourosh Saadatmand , David R. Swenson , William F. DiVergilio , Stephen M. Quinn , Zhimin Wan , Victor M. Benveniste
发明人： Kourosh Saadatmand , David R. Swenson , William F. DiVergilio , Stephen M. Quinn , Zhimin Wan , Victor M. Benveniste
IPC分类号： G21K510
CPC分类号： H01J37/3171 , H01J37/12 , H01J2237/038 , H01J2237/04737 , H01J2237/04924
摘要： An electrostatic quadrupole lens assembly (60) is provided for an ion implanter (10) having an axis (86) along which an ion beam passes, comprising: (i) four electrodes (84a-84d) oriented radially outward from the axis (86), approximately 90° apart from each other, such that a first pair of electrodes (84a and 84c) oppose each other approximately 180° apart, and a second pair of electrodes (84b and 84d) also oppose each other approximately 180° apart; (ii) a housing (62) having a mounting surface (64) for mounting the assembly (60) to the implanter, the housing at least partially enclosing the four electrodes (84a-84d); (iii) a first electrical lead (104) for providing electrical power to the first pair of electrodes (84a and 84c); (iv) a second electrical lead (108) for providing electrical power to the second pair of electrodes (84b and 84d); and (v) a plurality of electrically insulating members (92) formed of a glass-like material, comprising at least a first electrically insulating member for attaching the first pair of electrodes (84a and 84c) to the housing, and at least a second electrically insulating member for attaching the second pair of electrodes (84b and 84d) to the housing. The plurality of electrically insulating members (92) are preferably comprised of quartz (SiO2), or a heat resistant and chemical resistant glass material such as Pyrex®. The members (92) resist accumulation of material such as graphite sputtered off of the electrodes (84a-84d) by the ion beam, thus reducing the occurrence of high voltage breakdown and electrical current breakdown.
摘要翻译： 为具有离子束通过的轴线（86）的离子注入机（10）提供静电四极透镜组件（60），包括：（i）从轴线（86）径向向外取向的四个电极（84a-84d） ）彼此大约90°，使得第一对电极（84a和84c）彼此相对大约180°，并且第二对电极（84b和84d）也彼此相对大约180°; （ii）具有用于将所述组件（60）安装到所述注入器的安装表面（64）的壳体（62），所述壳体至少部分地包围所述四个电极（84a-84d）; （iii）用于向所述第一对电极（84a和84c）提供电力的第一电引线（104）; （iv）用于向所述第二对电极（84b和84d）提供电力的第二电引线（108）; 和（v）由玻璃状材料形成的多个电绝缘构件（92），至少包括用于将第一对电极（84a和84c）附接到壳体的第一电绝缘构件，以及至少第二 用于将第二对电极（84b和84d）附接到壳体的电绝缘构件。 多个电绝缘构件（92）优选地由石英（SiO 2）或耐热和耐化学腐蚀的玻璃材料（例如Pyrex）组成。 构件（92）通过离子束阻止溅射在电极（84a-84d）之外的诸如石墨的材料的堆积，从而减少高压击穿和电流击穿的发生。
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公开(公告)号：US06759665B2
公开(公告)日：2004-07-06
申请号：US09865155
申请日：2001-05-24
IPC分类号： H01J37317
CPC分类号： H01J37/32623 , H01J37/05 , H01J37/3171 , H01J37/32678
摘要： An apparatus and method for providing a low energy, high current ion beam for ion implantation applications are disclosed. The apparatus includes a mass analysis magnet mounted in a passageway along the path of an ion beam, and a magnetic device adapted to provide a multi-cusped magnetic field in the passageway, which may include a plurality of magnets mounted along at least a portion of the passageway. The magnets may cooperatively interact to provide a multi-cusped magnetic field along at least a portion of the passageway. The multi-cusped magnetic field may be superimposed on the dipole field at a specified field strength in a region of the mass analyzer passageway for a given low energy ion beam. The invention thus provides enhancement of beam plasma within a mass analyzer dipole magnetic field for low energy ion beams without the introduction of externally generated plasma. The invention further includes a method of providing ion beam containment in a low energy ion implantation system, as well as an ion implantation system.
摘要翻译： 公开了一种用于提供用于离子注入应用的低能量高电流离子束的装置和方法。 该设备包括安装在沿着离子束路径的通道中的质量分析磁体和适于在通道中提供多通道磁场的磁性装置，该磁性装置可以包括沿着至少一部分 通道。 磁体可以协同地相互作用以沿着通道的至少一部分提供多脉冲磁场。 对于给定的低能量离子束，多质量磁场可以在质量分析器通道的区域中以指定的场强叠加在偶极子场上。 因此，本发明在低能量离子束的质量分析器偶极磁场内提供束等离子体的增强，而不引入外部产生的等离子体。 本发明还包括一种在低能离子注入系统中提供离子束容纳的方法以及离子注入系统。
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公开(公告)号：US06541781B1
公开(公告)日：2003-04-01
申请号：US09625718
申请日：2000-07-25
IPC分类号： G21K510
CPC分类号： H01J37/32678 , H01J37/05 , H01J37/3171
摘要： An apparatus and method for providing a low energy, high current ion beam for ion implantation applications are disclosed. The apparatus includes a mass analysis magnet mounted in a passageway along the path of an ion beam, a power source adapted to provide an electric field in the passageway, and a magnetic device adapted to provide a multi-cusped magnetic field in the passageway, which may include a plurality of magnets mounted along at least a portion of the passageway. The power source and the magnets may cooperatively interact to provide an electron cyclotron resonance (ECR) condition along at least a portion of the passageway. The multi-cusped magnetic field may be superimposed on the dipole field at a specified field strength in a region of the mass analyzer passageway to interact with an electric field of a known RF or microwave frequency for a given low energy ion beam. The invention further comprises a mass analyzer waveguide adapted to couple the electric field to the beam plasma consistently along the length of the mass analyzer passageway to thereby improve the creation of the ECR condition. The invention thus provides enhancement of beam plasma within a mass analyzer dipole magnetic field for low energy ion beams without the introduction of externally generated plasma. The invention further includes a method of providing ion beam containment in a low energy ion implantation system, as well as an ion implantation system.
摘要翻译： 公开了一种用于提供用于离子注入应用的低能量高电流离子束的装置和方法。 该装置包括安装在沿着离子束的路径的通道中的质量分析磁体，适于在通道中提供电场的电源以及适于在通道中提供多通道磁场的磁性装置，其中 可以包括沿通道的至少一部分安装的多个磁体。 电源和磁体可以协同地相互作用以沿着通道的至少一部分提供电子回旋共振（ECR）状态。 多质量磁场可以在质量分析器通道的区域中以指定的场强叠加在偶极子场上，以与给定的低能离子束的已知RF或微波频率的电场相互作用。 本发明还包括质量分析器波导，其适于沿着质量分析器通道的长度一致地将电场耦合到束等离子体，从而改善ECR条件的产生。 因此，本发明在低能量离子束的质量分析器偶极磁场内提供束等离子体的增强，而不引入外部产生的等离子体。 本发明还包括一种在低能离子注入系统中提供离子束容纳的方法以及离子注入系统。
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9.发明授权Methods and systems for trapping ion beam particles and focusing an ion beam 有权用于捕获离子束粒子并聚焦离子束的方法和系统公开(公告)号：US07598495B2
公开(公告)日：2009-10-06
申请号：US11739934
申请日：2007-04-25
申请人： Peter L. Kellerman , Victor M. Benveniste , Alexander S. Perel , Brian S. Freer , Michael A. Graf
发明人： Peter L. Kellerman , Victor M. Benveniste , Alexander S. Perel , Brian S. Freer , Michael A. Graf
IPC分类号： H01J3/18
CPC分类号： H01J37/3171 , H01J37/12 , H01J2237/022 , H01J2237/049
摘要： A focusing particle trap system for ion implantation comprising an ion beam source that generates an ion beam, a beam line assembly that receives the ion beam from the ion beam source comprising a mass analyzer that selectively passes selected ions, a focusing electrostatic particle trap that receives the ion beam and removes particles from the ion beam comprising an entrance electrode comprising an entrance aperture and biased to a first base voltage, wherein the first surface of the entrance electrode is facing away from a center electrode and is approximately flat, wherein the second surface of the entrance electrode is facing toward the center electrode and is concave, wherein the center electrode is positioned a distance downstream from the entrance electrode comprising a center aperture and biased to a center voltage, wherein the center voltage is less than the first base voltage, wherein the first surface of the center electrode is facing toward the entrance electrode and is convex, wherein the second surface of the center electrode is facing away from the entrance electrode and is approximately flat, an exit electrode positioned a distance downstream from the center electrode comprising an exit aperture and biased to a second base voltage, and wherein the first surface of the exit electrode is facing toward the center electrode and is approximately flat, wherein the second surface of the exit electrode is facing away from the center electrode and is approximately flat, wherein a first electrostatic field is generated from the entrance electrode toward the center electrode and a second electrostatic field is generated from the exit electrode toward the center electrode; wherein the second base voltage is greater than the center voltage, and an end station that is downstream from the beam line assembly and receives the ion beam.
摘要翻译： 一种用于离子注入的聚焦粒子捕获系统，包括产生离子束的离子束源，接收来自离子束源的离子束的束线组件，该束束组件包括选择性地通过选定离子的质量分析器，接收 离子束并且从离子束中除去包含入口电极并且被偏置到第一基极电压的入口电极的颗粒，其中入口电极的第一表面背离中心电极并且近似平坦，其中第二表面 所述入口电极面向所述中心电极并且是凹形的，其中所述中心电极位于与所述入口电极的下游距离的位置，所述入口电极包括中心孔并被偏压到中心电压，其中所述中心电压小于所述第一基极电压， 其中所述中心电极的所述第一表面面向所述入口电极并且被连接 vex，其中所述中心电极的所述第二表面背离所述入口电极并且近似平坦，所述出口电极在所述中心电极的下游距离包括出口孔并且被偏压到第二基极电压，并且其中所述第一表面 所述出射电极的面向所述中心电极并且近似平坦，其中所述出射电极的所述第二表面背离所述中心电极并且近似平坦，其中从所述入射电极朝向所述中心电极产生第一静电场 并且从出射电极向中心电极产生第二静电场; 其中所述第二基极电压大于所述中心电压，以及在所述束线组件的下游并接收所述离子束的端站。
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公开(公告)号：US20090121149A1
公开(公告)日：2009-05-14
申请号：US11937849
申请日：2007-11-09
申请人： Svetlana Radovanov , Frank Sinclair , Peter L. Kellerman , Victor M. Benveniste , Robert Lindberg
发明人： Svetlana Radovanov , Frank Sinclair , Peter L. Kellerman , Victor M. Benveniste , Robert Lindberg
IPC分类号： H01J3/18
CPC分类号： H01J37/1477 , H01J37/12 , H01J37/1475 , H01J37/3171 , H01J2237/083 , H01J2237/0835 , H01J2237/24542 , H01J2237/31701
摘要： Techniques for shaping an ion beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for shaping an ion beam. The apparatus may comprise an entrance electrode biased at a first voltage potential, wherein an ion beam enters the entrance electrode, an exit electrode biased at a second voltage potential, wherein the ion beam exits the exit electrode, and a first suppression electrode and a second suppression electrode positioned between the entrance electrode and the exit electrode, wherein the first suppression electrode and the second suppression electrode are independently biased to variably focus the ion beam.
摘要翻译： 公开了用于成形离子束的技术。 在一个特定的示例性实施例中，可以将技术实现为用于成形离子束的装置。 该装置可以包括偏置在第一电压电位的入口电极，其中离子束进入入口电极，偏置在第二电压电位的出射电极，其中离子束离开出射电极，并且第一抑制电极和第二抑制电极 位于所述入射电极和所述出射电极之间的抑制电极，其中所述第一抑制电极和所述第二抑制电极被独立地偏置以可变地聚焦所述离子束。
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