公开(公告)号：US20210159397A1

公开(公告)日：2021-05-27

申请号：US17165309

申请日：2021-02-02

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Yohei SHIOKAWA ,  Atsushi TSUMITA

IPC: H01L43/04 ,  G11C11/18 ,  H01L27/22 ,  G11C11/16 ,  H01L43/08 ,  H01L43/10 ,  H01L43/14

Abstract: A magnetic memory including a plurality of magnetoresistance effect elements that hold information, each including a first ferromagnetic metal layer with a fixed magnetization direction, a second ferromagnetic metal layer with a varying magnetization direction, and a non-magnetic layer sandwiched between the first and second ferromagnetic metal layers; a plurality of first control elements that control reading of the information, wherein each of the plurality of first ferromagnetic metal layers is connected to a first control element; a plurality of spin-orbit torque wiring lines that extend in a second direction intersecting with a first direction which is a stacking direction of the magnetoresistance effect elements, wherein each of the second ferromagnetic metal layers is joined to one spin-orbit torque wiring line; a plurality of second control elements that control electric current flowing through the spin-orbit torque wiring lines.

公开(公告)号：US20210151667A1

公开(公告)日：2021-05-20

申请号：US16952274

申请日：2020-11-19

Applicant: TDK CORPORATION

Inventor： Yohei SHIOKAWA ,  Minoru OTA ,  Tomoyuki SASAKI ,  Yoshitomo TANAKA

IPC: H01L43/10 ,  G01R33/09 ,  G11C11/16 ,  G11C13/00 ,  H01F10/32 ,  H01L27/22 ,  H01L43/08

Abstract: A magnetoresistive effect element includes a magnetization fixed layer, a magnetization free layer, and a non-magnetic spacer layer that is stacked between the magnetization fixed layer and the magnetization free layer. The magnetization free layer includes a first free layer and a second free layer that are formed of a ferromagnetic material, and a magnetic coupling layer that is stacked between the first free layer and the second free layer. The first free layer and the second free layer are magnetically coupled to each other by exchange coupling via the magnetic coupling layer such that magnetization directions of the first free layer and the second free layer are antiparallel to each other. The magnetic coupling layer is a non-magnetic layer that includes Ir and at least one of the following elements: Fe, Co and Ni.

公开(公告)号：US20210013398A1

公开(公告)日：2021-01-14

申请号：US16645055

申请日：2019-05-13

Applicant: TDK CORPORATION

Inventor： Yohei SHIOKAWA

IPC: H01L43/04 ,  H01L27/22 ,  H01L43/06 ,  H01F10/32

Abstract: This spin-orbit torque magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer; and a spin-orbit torque wiring on which the first ferromagnetic layer is laminated, wherein the spin-orbit torque wiring extends in a second direction crossing a first direction which is an orthogonal direction of the first ferromagnetic layer, the first ferromagnetic layer includes a first laminate structure and an interfacial magnetic layer in order from the spin-orbit torque wiring side, the first laminate structure is a structure obtained by arranging a ferromagnetic conductor layer and an oxide-containing layer in order from the spin-orbit torque wiring side, the ferromagnetic conductor layer includes a ferromagnetic metal element, and the oxide-containing layer includes an oxide of a ferromagnetic metal element.

公开(公告)号：US20200278403A1

公开(公告)日：2020-09-03

申请号：US16756388

申请日：2019-05-10

Applicant: TDK CORPORATION

Inventor： Yohei SHIOKAWA

IPC: G01R33/09 ,  H01L43/04 ,  H01L43/10 ,  G11C11/16 ,  H01L43/08 ,  H01L27/22

Abstract: A spin-orbit-torque magnetization rotational element includes: a spin-orbit-torque wiring; and a laminated body laminated on the spin-orbit-torque wiring, wherein the laminated body includes a first ferromagnetic layer, an oxide containing layer, and a second ferromagnetic layer in order from the spin-orbit-torque wiring, wherein the oxide containing layer contains an oxide of a non-magnetic element, and wherein the first ferromagnetic layer and the second ferromagnetic layer are ferromagnetically coupled to each other.

公开(公告)号：US20190287706A1

公开(公告)日：2019-09-19

申请号：US16292840

申请日：2019-03-05

Applicant: TDK CORPORATION

Inventor： Yohei SHIOKAWA

IPC: H01F10/32 ,  G11C11/16 ,  H01L43/02 ,  H01L27/22 ,  H01L45/00

Abstract: A spin-orbit-torque magnetization rotational element includes: a spin-orbit-torque wiring extending in a first direction; a first ferromagnetic layer laminated on one surface of the spin-orbit-torque wiring; and a first electrode and a second electrode connected to the spin-orbit-torque wiring at positions sandwiching the first ferromagnetic layer in a plan view, wherein at least one of the first electrode and the second electrode includes therein a switching layer configured to shift between a high resistance state and a low resistance state with a predetermined threshold voltage as a boundary to allow an electric current to flow bidirectionally.

公开(公告)号：US20190267540A1

公开(公告)日：2019-08-29

申请号：US15965053

申请日：2018-04-27

Applicant: TDK CORPORATION

Inventor： Yohei SHIOKAWA

IPC: H01L43/10 ,  H01L43/08 ,  H01L27/22 ,  H01L43/04 ,  H01F10/32 ,  G11C11/16 ,  G11C11/18

Abstract: A spin current magnetized rotation element includes: a first ferromagnetic layer configured for a magnetization direction to be changed; and a spin-orbit torque wiring layer that extends in a second direction intersecting a first direction which is a direction orthogonal to a plane of the first ferromagnetic layer and is positioned in the first direction from the first ferromagnetic layer, wherein the spin-orbit torque wiring layer includes a superparamagnetic body therein, and the superparamagnetic body contains any one of a magnetic element selected from a group consisting of Fe, Co, Ni, and Gd.

公开(公告)号：US20190244651A1

公开(公告)日：2019-08-08

申请号：US16333176

申请日：2018-07-24

Applicant: TDK CORPORATION

Inventor： Yohei SHIOKAWA ,  Tomoyuki SASAKI

IPC: G11C11/16 ,  H01L27/22 ,  H01L43/02 ,  H01F10/32

CPC classification number: G11C11/1673 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/325 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/329 ,  H01L21/8239 ,  H01L27/105 ,  H01L27/228 ,  H01L29/82 ,  H01L43/02 ,  H01L43/06 ,  H01L43/08 ,  H01L43/10

Abstract: A spin current magnetoresistance effect element includes a magnetoresistance effect element, a spin-orbit torque wiring that extends in a first direction intersecting a lamination direction of the magnetoresistance effect element and is positioned on a side of the magnetoresistance effect element with the second ferromagnetic metal layer, and a control unit configured to control a direction of a current during reading. The control unit is connected to at least one of a first and second point, which are positions with the magnetoresistance effect element interposed therebetween in the first direction in the spin-orbit torque wiring, and a third point on a side of the magnetoresistance effect element with the first ferromagnetic layer. The control unit shunts a read current during reading from the third point toward the first point and the second point or merges the read current toward the third point from the first point and the second point.

公开(公告)号：US20190206431A1

公开(公告)日：2019-07-04

申请号：US16222009

申请日：2018-12-17

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Yohei SHIOKAWA

IPC: G11B5/39

Abstract: A magnetoresistance effect element has a structure in which a first ferromagnetic layer, a non-magnetic layer, and a second ferromagnetic layer are subsequently laminated and outer circumferential portions of the first ferromagnetic layer, the non-magnetic layer, and the second ferromagnetic layer are covered with a first insulating film which contains silicon nitride as a main component and has boron nitride or aluminum nitride further added thereto.

公开(公告)号：US20190189909A1

公开(公告)日：2019-06-20

申请号：US16271112

申请日：2019-02-08

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Yohei SHIOKAWA ,  Atsushi TSUMITA

IPC: H01L43/04 ,  H01L43/14 ,  H01L43/10 ,  H01L43/08 ,  G11C11/16 ,  G11C11/18

CPC classification number: H01L43/04 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/18 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  H01L43/14

Abstract: A magnetic memory including a plurality of magnetoresistance effect elements that hold information, each including a first ferromagnetic metal layer with a fixed magnetization direction, a second ferromagnetic metal layer with a varying magnetization direction, and a non-magnetic layer sandwiched between the first and second ferromagnetic metal layers; a plurality of first control elements that control reading of the information, wherein each of the plurality of first ferromagnetic metal layers is connected to a first control element; a plurality of spin-orbit torque wiring lines that extend in a second direction intersecting with a first direction which is a stacking direction of the magnetoresistance effect elements, wherein each of the second ferromagnetic metal layers is joined to one spin-orbit torque wiring line; a plurality of second control elements that control electric current flowing through the spin-orbit torque wiring lines.

公开(公告)号：US20190157343A1

公开(公告)日：2019-05-23

申请号：US15780080

申请日：2017-09-13

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Yohei SHIOKAWA

IPC: H01L27/22 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetization rotational element includes a single crystalline substrate, a magnetization stabilizing layer, a first ferromagnetic metal layer, and a joint layer in that order and at least the single crystalline substrate, the magnetization stabilizing layer, and the first ferromagnetic metal layer are single-crystallized.