公开(公告)号：US08372212B2

公开(公告)日：2013-02-12

申请号：US13369970

申请日：2012-02-09

申请人： Yohei Sato ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hidekazu Hayashi ,  Yukiko Kitajima ,  Takayuki Toshima ,  Mitsuaki Iwashita ,  Kazuyuki Mitsuoka ,  Gen You ,  Hiroki Ohno ,  Takehiko Orii

发明人： Yohei Sato ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hidekazu Hayashi ,  Yukiko Kitajima ,  Takayuki Toshima ,  Mitsuaki Iwashita ,  Kazuyuki Mitsuoka ,  Gen You ,  Hiroki Ohno ,  Takehiko Orii

IPC分类号： B08B3/04

CPC分类号： F26B3/02

摘要： According to one embodiment, a supercritical drying method comprises cleaning a semiconductor substrate with a chemical solution, rinsing the semiconductor substrate with pure water after the cleaning, changing a liquid covering a surface of the semiconductor substrate from the pure water to alcohol by supplying the alcohol to the surface after the rinsing, guiding the semiconductor substrate having the surface wetted with the alcohol into a chamber, discharging oxygen from the chamber by supplying an inert gas into the chamber, putting the alcohol into a supercritical state by increasing temperature in the chamber to a critical temperature of the alcohol or higher after the discharge of the oxygen, and discharging the alcohol from the chamber by lowering pressure in the chamber and changing the alcohol from the supercritical state to a gaseous state. The chamber contains SUS. An inner wall face of the chamber is subjected to electrolytic polishing.

摘要翻译： 根据一个实施方案，超临界干燥方法包括用化学溶液清洗半导体衬底，在清洁之后用纯水冲洗半导体衬底，通过供应醇将覆盖半导体衬底的表面的液体从纯水改变为醇 在冲洗后的表面上引导具有被醇润湿的表面的半导体衬底进入腔室，通过向室中供应惰性气体从室中排出氧气，通过增加室中的温度将醇置于超临界状态 醇的临界温度或排出氧后的较高温度，并且通过降低室中的压力并将醇从超临界状态改变为气态，从室中排出醇。 房间包含SUS。 对室的内壁面进行电解抛光。

公开(公告)号：US20120132230A1

公开(公告)日：2012-05-31

申请号：US13301936

申请日：2011-11-22

申请人： Takayuki Toshima ,  Mitsuaki Iwashita ,  Yuji Kamikawa ,  Mikio Nakashima

发明人： Takayuki Toshima ,  Mitsuaki Iwashita ,  Yuji Kamikawa ,  Mikio Nakashima

IPC分类号： B08B3/04 ,  B08B3/02 ,  B08B7/04

CPC分类号： H01L21/67051 ,  B08B3/04 ,  H01L21/02101 ,  H01L21/67017 ,  H01L21/6719

摘要： Disclosed is a substrate processing apparatus including a processing vessel in which a target substrate W is processed by using a high-pressure fluid in a supercritical state or a subcritical state, and pipes that are divided into a first pipe member and a second pipe member in a flowing direction of the fluid and circulate the fluid are connected to processing vessel. A connecting/disconnecting mechanism moves at least one of first and second pipe members between a connection position and a separation position of first pipe member and the second pipe member, and opening/closing valves are installed in each of first and second pipe members and are closed at the time of separating pipe members.

摘要翻译： 公开了一种基板处理装置，其包括处理容器，其中通过使用超临界状态或亚临界状态的高压流体处理目标基板W，以及分割成第一管构件和第二管构件的管 流体的流动方向和流体循环连接到处理容器。 连接/断开机构将第一和第二管件中的至少一个移动到第一管件和第二管件之间的连接位置和分离位置之间，并且开/关阀安装在第一和第二管件中的每一个中，并且 在分离管件时关闭。

公开(公告)号：US20100112796A1

公开(公告)日：2010-05-06

申请号：US12441741

申请日：2008-06-06

申请人： Pao-Hwa Chou ,  Kazuhide Hasebe ,  Shigeru Nakajima ,  Yasushi Akasaka ,  Mitsuaki Iwashita ,  Reiji Niino

发明人： Pao-Hwa Chou ,  Kazuhide Hasebe ,  Shigeru Nakajima ,  Yasushi Akasaka ,  Mitsuaki Iwashita ,  Reiji Niino

IPC分类号： H01L21/28 ,  H01L21/3213

CPC分类号： H01L21/3086 ,  H01L21/0337 ,  H01L21/3088 ,  H01L21/32139 ,  H01L29/66795

摘要： Disclosed is a patterning method including: forming, on a thin film, a sacrificial film made of a material different from that of the thin film and made of SiBN; processing the sacrificial film into a pattern having a preset interval by using a photolithography technique; forming, on sidewalls of the processed sacrificial film, sidewall spacers made of a material different from those of the sacrificial film and the thin film; removing the processed sacrificial film; and processing the thin film by using the sidewall spacers as a mask.

摘要翻译： 公开了一种图案化方法，包括：在薄膜上形成由与SiBN不同的材料制成的牺牲膜; 通过使用光刻技术将牺牲膜处理成具有预设间隔的图案; 在加工的牺牲膜的侧壁上形成由与牺牲膜和薄膜不同的材料制成的侧壁间隔物; 去除加工的牺牲膜; 以及通过使用侧壁间隔件作为掩模来处理薄膜。

公开(公告)号：US20100112496A1

公开(公告)日：2010-05-06

申请号：US12441007

申请日：2008-06-06

申请人： Shigeru Nakajima ,  Kazuhide Hasebe ,  Pao-Hwa Chou ,  Mitsuaki Iwashita ,  Reiji Niino

发明人： Shigeru Nakajima ,  Kazuhide Hasebe ,  Pao-Hwa Chou ,  Mitsuaki Iwashita ,  Reiji Niino

IPC分类号： G03F7/20

CPC分类号： H01L21/3086 ,  G03F7/40 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/3088 ,  H01L21/31608

摘要： A patterning method comprises a step for forming a first film on a substrate, a step for forming a multilayer film including a resist film on the first film, a step for patterning the resist film by photolithography to form a patterned resist film having a predetermined pattern, a step for forming an silicon oxide film different from the first film on the patterned resist film and the first film by supplying a first gas containing an organic silicon and a second gas containing an activated oxygen species alternately to the substrate, a step for etching the silicon oxide film to form a sidewall spacer on the sidewall of the patterned resist film, a step for removing the patterned resist film, and a step for processing the first film by using the sidewall spacer as a mask.

摘要翻译： 图案化方法包括在基板上形成第一膜的步骤，用于在第一膜上形成包括抗蚀剂膜的多层膜的步骤，通过光刻图案化抗蚀剂膜以形成具有预定图案的图案化抗蚀剂膜的步骤 通过将含有有机硅和含有活性氧的第二气体的第一气体交替地供给到基板上，在图案化的抗蚀剂膜和第一膜上形成与第一膜不同的氧化硅膜的步骤，蚀刻步骤 氧化硅膜在图案化的抗蚀剂膜的侧壁上形成侧壁间隔物，去除图案化的抗蚀剂膜的步骤，以及通过使用侧壁间隔物作为掩模来处理第一膜的步骤。

公开(公告)号：US20080199617A1

公开(公告)日：2008-08-21

申请号：US12031101

申请日：2008-02-14

申请人： Yuichiro Inatomi ,  Mitsuaki Iwashita

发明人： Yuichiro Inatomi ,  Mitsuaki Iwashita

IPC分类号： B05D1/32 ,  B05B7/00

CPC分类号： H01L21/6715 ,  H01L21/6708

摘要： In the present invention, a resist pattern size shrink liquid is applied onto a resist pattern of the substrate. The substrate is then heated, whereby a lower layer portion of the resist pattern size shrink liquid in contact with the front surface of the resist pattern is changed in quality to insoluble to pure water. An upper layer portion of the resist pattern size shrink liquid is then removed with the removing solution. In this removing step, a solution film of pure water is first formed on the substrate with the substrate at rest to dissolve the upper layer portion of the resist pattern size shrink liquid by the solution film of pure water. Pure water is then supplied to the substrate with the substrate being rotated to remove the upper layer portion of the resist pattern size shrink liquid from a top of the substrate. The substrate is then rotated to be dried.

摘要翻译： 在本发明中，将抗蚀剂图案尺寸的收缩液施加到基板的抗蚀剂图案上。 然后加热基板，由此抗蚀剂图案尺寸收缩液体的下层部分与抗蚀剂图案的前表面接触的质量被改变为不溶于纯水。 然后用去除溶液除去抗蚀剂图案尺寸的收缩液的上层部分。 在该除去工序中，首先在基板上形成纯水溶液膜，使基板静置，以通过纯水的溶液膜溶解抗蚀图案尺寸的收缩液的上层部分。 然后将纯水提供给基板，旋转基板以从基板的顶部除去抗蚀剂图案尺寸收缩液体的上层部分。 然后将基底旋转以干燥。

公开(公告)号：US20050260771A1

公开(公告)日：2005-11-24

申请号：US10520406

申请日：2003-07-01

申请人： Mitsuaki Iwashita ,  Nobuo Konishi

发明人： Mitsuaki Iwashita ,  Nobuo Konishi

IPC分类号： H01L21/00 ,  C23C16/00

CPC分类号： H01L21/6708

摘要： An object of the present invention is to previously subject a substrate such as a wafer to predetermined processing to prevent a hard mask or the like from peeling off during polishing processing performed later. In the present invention, a sloped part such that its film thickness becomes thinner toward an outer peripheral part and an end part of the substrate on which a film is formed is formed.

摘要翻译： 本发明的目的是预先对诸如晶片的基板进行预定处理，以防止在以后执行的抛光处理期间硬掩模等被剥离。 在本发明中，形成了其膜厚度朝着形成有膜的基板的外周部分和端部变薄的倾斜部分。

公开(公告)号：US06800546B2

公开(公告)日：2004-10-05

申请号：US10095025

申请日：2002-03-12

申请人： Nobuo Konishi ,  Mitsuaki Iwashita ,  Hiroki Ohno ,  Shigeru Kawamura ,  Masahito Sugiura

发明人： Nobuo Konishi ,  Mitsuaki Iwashita ,  Hiroki Ohno ,  Shigeru Kawamura ,  Masahito Sugiura

IPC分类号： H01L214763

CPC分类号： H01L21/76837 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829

摘要： The present invention comprises the steps of performing a reforming process on a surface of a low dielectric constant insulation film formed on a substrate which includes one of a porous low dielectric constant insulation film and a non-porous low dielectric constant insulation film and forming an insulation film as at least one of an etching mask and a Chemical Mechanical Polishing stopper (CMP stopper) on the reformed surface of the low dielectric constant insulation film. For example, plasma is radiated as a reforming process mentioned above, the surface roughness of a low dielectric insulation film is increased and, as a result, adhesion between the films and also between the inter-layer insulation film and other neighboring films can be improved with so-called “anchor effect”.

摘要翻译： 本发明包括以下步骤：对形成在基板上的低介电常数绝缘膜的表面进行重整工序，该基板包括多孔低介电常数绝缘膜和无孔低介电常数绝缘膜之一，并形成绝缘层 薄膜作为低介电常数绝缘膜的重整表面上的蚀刻掩模和化学机械抛光终止剂（CMP止动器）中的至少一个。 例如，等离子体作为上述重整工序被照射，低介电绝缘膜的表面粗糙度增加，结果，可以改善膜之间以及层间绝缘膜和其它相邻膜之间的粘附性 具有所谓的“锚效应”。

公开(公告)号：US09236280B2

公开(公告)日：2016-01-12

申请号：US13301936

申请日：2011-11-22

申请人： Takayuki Toshima ,  Mitsuaki Iwashita ,  Yuji Kamikawa ,  Mikio Nakashima

发明人： Takayuki Toshima ,  Mitsuaki Iwashita ,  Yuji Kamikawa ,  Mikio Nakashima

IPC分类号： B08B3/04 ,  H01L21/67 ,  H01L21/02

CPC分类号： H01L21/67051 ,  B08B3/04 ,  H01L21/02101 ,  H01L21/67017 ,  H01L21/6719

摘要： Disclosed is a substrate processing apparatus including a processing vessel in which a target substrate W is processed by using a high-pressure fluid in a supercritical state or a subcritical state, and pipes that are divided into a first pipe member and a second pipe member in a flowing direction of the fluid and circulate the fluid are connected to processing vessel. A connecting/disconnecting mechanism moves at least one of first and second pipe members between a connection position and a separation position of first pipe member and the second pipe member, and opening/closing valves are installed in each of first and second pipe members and are closed at the time of separating pipe members.

摘要翻译： 公开了一种基板处理装置，其包括处理容器，其中通过使用超临界状态或亚临界状态的高压流体处理目标基板W，以及分割成第一管构件和第二管构件的管 流体的流动方向和流体循环连接到处理容器。 连接/断开机构将第一和第二管件中的至少一个移动到第一管件和第二管件之间的连接位置和分离位置之间，并且开/关阀安装在第一和第二管件中的每一个中，并且 在分离管件时关闭。

公开(公告)号：US08771429B2

公开(公告)日：2014-07-08

申请号：US13420870

申请日：2012-03-15

申请人： Linan Ji ,  Hidekazu Hayashi ,  Hiroshi Tomita ,  Hisashi Okuchi ,  Yohei Sato ,  Takayuki Toshima ,  Mitsuaki Iwashita ,  Kazuyuki Mitsuoka ,  Gen You ,  Hiroki Ohno ,  Takehiko Orii

发明人： Linan Ji ,  Hidekazu Hayashi ,  Hiroshi Tomita ,  Hisashi Okuchi ,  Yohei Sato ,  Takayuki Toshima ,  Mitsuaki Iwashita ,  Kazuyuki Mitsuoka ,  Gen You ,  Hiroki Ohno ,  Takehiko Orii

IPC分类号： B08B7/00

CPC分类号： H01L21/02 ,  F26B21/10 ,  F26B21/14 ,  F26B23/028 ,  F26B2200/04 ,  H01L21/02052 ,  H01L21/02057 ,  H01L21/02101 ,  H01L21/67034

摘要： According to one embodiment, a supercritical drying method for a semiconductor substrate, comprises introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method further comprises performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber.

摘要翻译： 根据一个实施方案，一种用于半导体衬底的超临界干燥方法包括将半导体衬底以一种状态将半导体衬底引入室中，该半导体衬底的表面被醇润湿，用半导体衬底上的醇代替超临界流体碳 通过将半导体衬底浸渍到腔室中的超临界流体中，并且将超临界流体和醇从腔室排出并且减小腔室内的压力，从而将二氧化碳稀释。 该方法还包括在减小室内的压力之后，通过向室内供应氧气或臭氧气体进行烘烤处理。

公开(公告)号：US08383522B2

公开(公告)日：2013-02-26

申请号：US13154728

申请日：2011-06-07

申请人： Shigeru Nakajima ,  Kazuhide Hasebe ,  Pao-Hwa Chou ,  Mitsuaki Iwashita ,  Reiji Niino

发明人： Shigeru Nakajima ,  Kazuhide Hasebe ,  Pao-Hwa Chou ,  Mitsuaki Iwashita ,  Reiji Niino

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： G03F7/405 ,  G03F7/0035 ,  H01L21/02164 ,  H01L21/0228 ,  H01L21/0271 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/32139

摘要： There is provided a micro pattern forming method including forming a thin film on a substrate; forming a film serving as a mask when processing the thin film; processing the film serving as a mask into a pattern including lines having a preset pitch; trimming the pattern including the lines; and forming an oxide film on the pattern including the lines and on the thin film by alternately supplying a source gas and an activated oxygen species. Here, the process of trimming the pattern and the process of forming an oxide film are consecutively performed in a film forming apparatus configured to form the oxide film.

摘要翻译： 提供了一种微图案形成方法，包括在基板上形成薄膜; 在加工薄膜时形成用作掩模的膜; 将作为掩模的胶片处理成包括具有预设间距的线的图案; 修剪包括线条的图案; 并且通过交替地供给源气体和活性氧物质，在包括线条的图案和薄膜上形成氧化膜。 这里，在构成为形成氧化膜的成膜装置中连续进行修整图案的修整和形成氧化膜的工序。