公开(公告)号：US20070156535A1

公开(公告)日：2007-07-05

申请号：US11323857

申请日：2005-12-30

申请人： Thomas Hoffmann ,  Dietmar Nowotny

发明人： Thomas Hoffmann ,  Dietmar Nowotny

IPC分类号： G06Q20/00

CPC分类号： G06Q20/407 ,  G06Q20/04 ,  G06Q20/20

摘要： Cancellation of transactions is detected in a business operations system, and a cancellation message uniquely identifying an operational document describing the transaction is created. The cancellation message is sent to various components in the business operations system and to other systems as desired. The receiving entity is free to select actions taken in response to the cancellation. In one embodiment, a primary copy of the operational document, referred to as prima nota, is referenced by a unique internal reference identifier. In further embodiments, the cancellation message may also reference prima nota of a cancellation document.

摘要翻译： 在业务操作系统中检测到交易的取消，并且创建唯一地标识描述交易的操作文档的取消消息。 取消消息被发送到业务操作系统中的各种组件，并且根据需要被发送到其他系统。 接收实体可以自由地选择响应于取消所采取的动作。 在一个实施例中，被称为prima nota的操作文档的主要副本由唯一的内部参考标识符引用。 在另外的实施例中，取消消息也可以引用取消文档的初始标注。

公开(公告)号：US20060118128A1

公开(公告)日：2006-06-08

申请号：US10554948

申请日：2004-05-03

申请人： Thomas Hoffmann ,  Sylvia Piroth

发明人： Thomas Hoffmann ,  Sylvia Piroth

IPC分类号： A24F47/00

CPC分类号： A24F47/004

摘要： The invention relates to a smoke-free cigarette, which provides the user with just nicotine and no toxic and/or carcinogenic compounds. The cigarette comprises two pieces, a reusable piece with a thermoplastic sleeve with a deposited heat-reflecting coating, an air inlet opening and a heat source mounted in the sleeve such that air flow channels are created with a star-shaped or wave-shaped form; and an exchangeable non-reusable piece with a nicotine and aroma deposit, a filter and optionally a nicotine meter and usage display. The heat released by the heat source heats the air sucked through the air-flow channels by the consumer and passes through the deposit such as to release the nicotine and aromas present in the deposit which, after passing through the filter may be consumed by the smoker.

摘要翻译： 本发明涉及一种无烟香烟，其为使用者提供尼古丁，无毒和/或致癌化合物。 香烟包括两个部件，一个具有热塑性套筒的可重复使用的部件，其具有沉积的热反射涂层，空气入口开口和安装在套筒中的热源，使得空气流动通道产生具有星形或波形形式 ; 以及具有尼古丁和香气沉积物的可交换的不可重复使用的片，过滤器和任选的尼古丁米和使用显示器。 由热源释放的热量加热消费者通过空气流动通道吸入的空气，并通过沉积物，以释放存在于沉积物中的尼古丁和香气，其在通过过滤器之后可被吸烟者消耗 。

公开(公告)号：US07045408B2

公开(公告)日：2006-05-16

申请号：US10443152

申请日：2003-05-21

申请人： Thomas Hoffmann ,  Chris Auth ,  Mark Armstrong ,  Stephen Cea

发明人： Thomas Hoffmann ,  Chris Auth ,  Mark Armstrong ,  Stephen Cea

IPC分类号： H01L21/8238 ,  H01L21/84 ,  H01L21/00 ,  H01L21/461 ,  H01L21/31

CPC分类号： H01L29/7843 ,  H01L21/823807 ,  H01L21/823828 ,  H01L29/665

摘要： An integrated circuit is described that comprises a PMOS transistor and an NMOS transistor that are formed on a semiconductor substrate. A silicate glass layer is formed on only the PMOS transistor or the NMOS transistor; and an etch stop layer is formed on the silicate glass layer. Also described is a method for forming an integrated circuit. That method comprises forming a PMOS transistor structure and an NMOS transistor structure on a semiconductor substrate, forming a silicate glass layer on only the PMOS transistor structure or the NMOS transistor structure, and forming an etch stop layer on the silicate glass layer.

摘要翻译： 描述了一种集成电路，其包括形成在半导体衬底上的PMOS晶体管和NMOS晶体管。 仅在PMOS晶体管或NMOS晶体管上形成硅酸盐玻璃层; 并且在硅酸盐玻璃层上形成蚀刻停止层。 还描述了一种用于形成集成电路的方法。 该方法包括在半导体衬底上形成PMOS晶体管结构和NMOS晶体管结构，仅在PMOS晶体管结构或NMOS晶体管结构上形成硅酸盐玻璃层，并在硅酸盐玻璃层上形成蚀刻停止层。

公开(公告)号：US07011958B2

公开(公告)日：2006-03-14

申请号：US10124663

申请日：2002-04-17

申请人： Manfred Watzele ,  Thomas Hoffmann ,  Cordula Nemetz ,  Dieter Heindl ,  Thomas Metzler ,  Wolfgang Mutter

发明人： Manfred Watzele ,  Thomas Hoffmann ,  Cordula Nemetz ,  Dieter Heindl ,  Thomas Metzler ,  Wolfgang Mutter

IPC分类号： C12P21/06 ,  C12P19/34

CPC分类号： C12N15/10 ,  C12N15/68

摘要： The present invention concerns a method for improving the stability of linear short DNA towards exonucleases in cell-free in vitro transcription/translation systems using lysates containing exonucleases or in cellular systems containing exonucleases, wherein the stability of the linear short DNA is improved by adding unspecific linear DNA.

摘要翻译： 本发明涉及使用含有外切核酸酶的裂解物或含有核酸外切酶的细胞系统，在无细胞体外转录/翻译系统中提高线性短DNA对外源核酸酶的稳定性的方法，其中线性短DNA的稳定性通过添加非特异性 线性DNA。

公开(公告)号：US20050167652A1

公开(公告)日：2005-08-04

申请号：US11070365

申请日：2005-03-01

申请人： Thomas Hoffmann ,  Stephen Cea ,  Martin Giles

发明人： Thomas Hoffmann ,  Stephen Cea ,  Martin Giles

IPC分类号： H01L21/28 ,  H01L29/10 ,  H01L29/49 ,  H01L29/06

CPC分类号： H01L21/823807 ,  H01L21/28044 ,  H01L29/1054 ,  H01L29/4925 ,  H01L29/7842 ,  H01L29/7845

摘要： A method including forming a device on a substrate, the device including a gate electrode on a surface of the substrate; a first junction region and a second junction region in the substrate adjacent the gate electrode; and depositing a straining layer on the gate electrode.

摘要翻译： 一种包括在衬底上形成器件的方法，所述器件在衬底的表面上包括栅电极; 邻近栅电极的衬底中的第一结区和第二结区; 以及在所述栅电极上沉积应变层。

公开(公告)号：US06578341B2

公开(公告)日：2003-06-17

申请号：US09837533

申请日：2001-04-18

申请人： Thomas Hoffmann ,  Martin Hoffmann

发明人： Thomas Hoffmann ,  Martin Hoffmann

IPC分类号： E04B138

CPC分类号： E04B1/2604 ,  E04B2001/2632 ,  E04B2001/2652 ,  F16B7/00 ,  F16B2200/30

摘要： The invention relates to a butt joint of wooden construction components such as frame components, joined together with contact surfaces, and in particular to a post-and-lock bolt joint. Such a joint has at least one connection element that is symmetrical with respect to a center plane and has the form of a dovetail-shaped double wedge, or other undercuts. This connection element engages grooves that are open toward the contact surfaces and are adapted to the cross sections of the connection elements extending on both sides of the center plane, and bridge the contact plane between the wooden construction components. The grooves are open toward the same side edges of the wooden construction components. The butt joint is secured by at least one long-stretching second connection element that is received in sections of the wooden construction components, bridging the contact plane, and which transversely penetrates the first connection element.

摘要翻译： 本发明涉及一种木结构部件的对接接头，例如框架部件，与接触表面连接在一起，特别涉及后锁螺栓接头。 这种接头具有至少一个相对于中心平面对称的连接元件，并具有燕尾形双楔形物或其它底切部分的形式。 该连接元件接合朝向接触表面敞开的凹槽，并且适合于在中心平面的两侧延伸的连接元件的横截面，并且在木结构构件之间桥接接触平面。 槽朝向木结构部件的相同侧边缘敞开。 对接接头由至少一个长延伸的第二连接元件固定，所述长延伸第二连接元件容纳在木结构部件的部分中，桥接接触平面，并横向穿过第一连接元件。

公开(公告)号：US08940722B2

公开(公告)日：2015-01-27

申请号：US13581961

申请日：2011-02-28

申请人： Olaf Kinzel ,  Christoph Steeneck ,  Gerald Kleymann ,  Michael Albers ,  Thomas Hoffmann ,  Claus Kremoser ,  Sanja Perovic-Ottstadt ,  Thomas Schlüter

发明人： Olaf Kinzel ,  Christoph Steeneck ,  Gerald Kleymann ,  Michael Albers ,  Thomas Hoffmann ,  Claus Kremoser ,  Sanja Perovic-Ottstadt ,  Thomas Schlüter

IPC分类号： C07D245/06 ,  C07D267/22 ,  C07D413/10 ,  C07D413/12 ,  C07D417/12 ,  C07D487/04 ,  C07D498/04 ,  A61K31/395 ,  C07D281/18 ,  C07D403/12

CPC分类号： C07D267/22 ,  C07D245/06 ,  C07D281/18 ,  C07D403/12 ,  C07D413/10 ,  C07D413/12 ,  C07D417/12 ,  C07D487/04 ,  C07D498/04

摘要： The invention provides modulators for the orphan nuclear receptor RORγ and methods for treating RORγ mediated diseases by administrating these novel RORγ modulators to a human or a mammal in need thereof. Specifically, the present invention provides compounds of Formula (1) and the enantiomers, diastereomers, tautomers, solvates and pharmaceutically acceptable salts thereof.

摘要翻译： 本发明提供了用于孤儿核受体RORγ的调节剂和通过将这些新的RORγ调节剂施用于有需要的人或哺乳动物来治疗RORγ介导的疾病的方法。 具体地说，本发明提供式（1）的化合物及其对映异构体，非对映异构体，互变异构体，溶剂合物及其药学上可接受的盐。

公开(公告)号：US08813755B2

公开(公告)日：2014-08-26

申请号：US12737159

申请日：2009-06-12

申请人： Thomas Hoffmann

发明人： Thomas Hoffmann

IPC分类号： A61B19/00

CPC分类号： A61F13/51 ,  A61B46/00 ,  A61B46/40

摘要： A surgical cover has a second absorbent region which is overlapped by a fluid absorbent and fluid permeable material section having outer edges and adjoining edge regions. The surgical cover as such extends in a longitudinal direction LR between an upper end and a lower end. The absorbent material section is undetachably fixed across the entire circumference on the upper side of the base cover material of the surgical cover and is substantially not connected to the base cover material outside of the edge regions such that a pocket is formed between the absorbent material section and the fluid impermeable base cover material. At least one of the edge regions of the absorbent material section has a fluid barrier formed by a joining element which undetachably fixes the material section to the upper side of the base cover material.

摘要翻译： 手术罩具有第二吸收区域，该第二吸收区域由具有外边缘和邻接边缘区域的流体吸收剂和流体可渗透材料部分重叠。 外科手术盖在上端和下端之间沿纵向LR延伸。 吸收材料部分不可脱离地固定在外科手术盖的基底材料的上侧的整个圆周上，并且基本上不与边缘区域外部的基部覆盖材料连接，使得在吸收材料部分 和流体不可渗透的底盖材料。 吸收材料部分的至少一个边缘区域具有由接合元件形成的流体屏障，该接合元件将材料部分不可靠地固定到基部覆盖材料的上侧。

公开(公告)号：US20140103406A1

公开(公告)日：2014-04-17

申请号：US14133743

申请日：2013-12-19

申请人： Lingquan Wang ,  Teymur Bakhishev ,  Dalong Zhao ,  Pushkar Ranade ,  Sameer Pradhan ,  Thomas Hoffmann ,  Lucian Shifren ,  Lance Scudder

发明人： Lingquan Wang ,  Teymur Bakhishev ,  Dalong Zhao ,  Pushkar Ranade ,  Sameer Pradhan ,  Thomas Hoffmann ,  Lucian Shifren ,  Lance Scudder

IPC分类号： H01L29/78 ,  H01L29/66

CPC分类号： H01L29/78 ,  H01L21/743 ,  H01L21/76224 ,  H01L21/823412 ,  H01L21/823481 ,  H01L27/092 ,  H01L29/105 ,  H01L29/66477 ,  H01L29/6659

摘要： A semiconductor structure is formed with a NFET device and a PFET device. The NFET device is formed by masking the PFET device regions of a substrate, forming a screen layer through epitaxial growth and in-situ doping, and forming an undoped channel layer on the screen layer through epitaxial growth. The PFET device is similarly formed by masking the NFET regions of a substrate, forming a screen layer through epitaxial growth and in-situ doping, and forming an undoped channel layer on the screen layer through epitaxial growth. An isolation region is formed between the NFET and the PFET device areas to remove any facets occurring during the separate epitaxial growth phases. By forming the screen layer through in-situ doped epitaxial growth, a reduction in junction leakage is achieved versus forming the screen layer using ion implantation.

摘要翻译： 半导体结构由NFET器件和PFET器件形成。 通过掩蔽衬底的PFET器件区域，通过外延生长和原位掺杂形成屏蔽层，并通过外延生长在屏蔽层上形成未掺杂沟道层，形成NFET器件。 PFET器件类似地通过掩蔽衬底的NFET区域，通过外延生长和原位掺杂形成屏蔽层，并通过外延生长在屏幕层上形成未掺杂沟道层。 在NFET和PFET器件区域之间形成隔离区以去除在单独外延生长阶段期间发生的任何刻面。 通过原位掺杂外延生长形成屏蔽层，相对于使用离子注入形成屏幕层，实现了结漏电减少。

公开(公告)号：US08637955B1

公开(公告)日：2014-01-28

申请号：US13600647

申请日：2012-08-31

申请人： Lingquan Wang ,  Teymur Bakhishev ,  Dalong Zhao ,  Pushkar Ranade ,  Sameer Pradhan ,  Thomas Hoffmann ,  Lucian Shifren ,  Lance Scudder

发明人： Lingquan Wang ,  Teymur Bakhishev ,  Dalong Zhao ,  Pushkar Ranade ,  Sameer Pradhan ,  Thomas Hoffmann ,  Lucian Shifren ,  Lance Scudder

IPC分类号： H01L29/15 ,  H01L29/167 ,  H01L29/36

CPC分类号： H01L29/78 ,  H01L21/743 ,  H01L21/76224 ,  H01L21/823412 ,  H01L21/823481 ,  H01L27/092 ,  H01L29/105 ,  H01L29/66477 ,  H01L29/6659

摘要： A semiconductor structure is formed with a NFET device and a PFET device. The NFET device is formed by masking the PFET device regions of a substrate, forming a screen layer through epitaxial growth and in-situ doping, and forming an undoped channel layer on the screen layer through epitaxial growth. The PFET device is similarly formed by masking the NFET regions of a substrate, forming a screen layer through epitaxial growth and in-situ doping, and forming an undoped channel layer on the screen layer through epitaxial growth. An isolation region is formed between the NFET and the PFET device areas to remove any facets occurring during the separate epitaxial growth phases. By forming the screen layer through in-situ doped epitaxial growth, a reduction in junction leakage is achieved versus forming the screen layer using ion, implantation.

摘要翻译： 半导体结构由NFET器件和PFET器件形成。 通过掩蔽衬底的PFET器件区域，通过外延生长和原位掺杂形成屏蔽层，并通过外延生长在屏蔽层上形成未掺杂沟道层，形成NFET器件。 PFET器件类似地通过掩蔽衬底的NFET区域，通过外延生长和原位掺杂形成屏蔽层，并通过外延生长在屏幕层上形成未掺杂沟道层。 在NFET和PFET器件区域之间形成隔离区以去除在单独外延生长阶段期间发生的任何刻面。 通过通过原位掺杂的外延生长形成屏蔽层，相对于使用离子注入形成屏幕层，实现了结漏电减少。