公开(公告)号：US5486709A

公开(公告)日：1996-01-23

申请号：US38623

申请日：1993-03-26

申请人： Yutaka Hayashi ,  Masaaki Sato ,  Yoshiki Maeyashiki

发明人： Yutaka Hayashi ,  Masaaki Sato ,  Yoshiki Maeyashiki

IPC分类号： H01L29/74 ,  H01L27/02 ,  H01L29/747 ,  H01L29/861 ,  H01L29/87

CPC分类号： H01L27/0248 ,  H01L29/87

摘要： In a breakover type surge protection device utilizing punch-through that comprises a second semiconductor region forming a first pn junction with a first semiconductor region, a third semiconductor region forming a second pn junction with the second semiconductor region and a fourth semiconductor region forming a third pn junction with the first semiconductor region at a place apart from the second semiconductor region, the second semiconductor region is constituted of a punch-through suppression region portion disposed to cover the corners of the third semiconductor region and a punch-through generation region portion disposed at a place where its thickness can be made uniform. Fabricating surge protection devices according to this configuration reduces variation among their breakover currents and hold currents and increases their surge absorption capacity.

摘要翻译： 在利用穿通的断路式浪涌保护装置中，包括形成与第一半导体区域的第一pn结的第二半导体区域，与第二半导体区域形成第二pn结的第三半导体区域和形成第三半导体区域的第三半导体区域 在与第二半导体区域隔开的位置处与第一半导体区域的pn结，第二半导体区域由设置成覆盖第三半导体区域的角部的穿通抑制区域部分和设置在穿孔产生区域部分 在其厚度可以均匀的地方。 根据这种配置制造浪涌保护装置可以减少其断流和保持电流之间的变化，并增加其浪涌吸收能力。

公开(公告)号：US5376809A

公开(公告)日：1994-12-27

申请号：US192305

申请日：1994-02-04

申请人： Yutaka Hayashi ,  Masaaki Sato ,  Yoshiki Maeyashiki

发明人： Yutaka Hayashi ,  Masaaki Sato ,  Yoshiki Maeyashiki

IPC分类号： H01L29/74 ,  H01L29/744 ,  H01L29/747 ,  H01L29/861 ,  H01L29/87 ,  H01L29/48 ,  H01L29/90

CPC分类号： H01L29/87

摘要： A surge protection device for absorbing surges of either polarity has a second region forming a first pn junction with a first region, a third region capable of injecting first minority carriers into the second region, a fourth region forming a second pn junction with the first region and a fifth region capable of injecting second minority carriers into the fourth region. The surfaces of the fourth region and the fifth region and a first Schottky junction with respect to the first region are in mutual electrical connection with a first ohmic electrode, while the surfaces of the second region and the third region and a second Schottky junction with respect to the first region are in mutual electrical connection with a second ohmic electrode. During the initial stage when a surge voltage applied across the first and second electrodes is in a transient rising state, the dV/dt immunity is increased by majority carrier current flowing into the first region through the Schottky junction forward biased owing to the surge polarity and charging the junction capacitance of the reverse biased pn junction.

摘要翻译： 用于吸收任一极性的浪涌的浪涌保护装置具有形成与第一区域的第一pn结的第二区域，能够将第一少数载流子注入第二区域的第三区域，与第一区域形成第二pn结的第四区域 以及能够将第二少数载体注入第四区域的第五区域。 第四区域和第五区域的表面和相对于第一区域的第一肖特基结与第一欧姆电极相互电连接，而第二区域和第三区域的表面和第二肖特基结的相对于 到第一区域与第二欧姆电极相互电连接。 在施加在第一和第二电极两端的浪涌电压处于瞬态上升状态的初始阶段，由于浪涌极性，通过肖特基结正向偏置流入第一区域的多数载流子电流使得dV / dt抗扰度增加， 充电反向偏置pn结的结电容。

公开(公告)号：US5376559A

公开(公告)日：1994-12-27

申请号：US172731

申请日：1993-12-27

申请人： Mikio Mukai ,  Masahiko Einaga ,  Yutaka Hayashi

发明人： Mikio Mukai ,  Masahiko Einaga ,  Yutaka Hayashi

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L29/786 ,  H01L21/265

CPC分类号： H01L29/66772 ,  H01L29/78648 ,  H01L29/78654 ,  Y10S148/012 ,  Y10S438/928

摘要： A lateral insulating gate type field effect transistor can be manufactured with ease reliably by using a semiconductor substrate having excellent crystal property. A projected portion (2) is formed on a first major surface side of a semiconductor substrate (1). A first gate portion (3) having a width (length) smaller than that of the projected portion (2) is formed on the projected portion (2). An insulating layer (4) is formed on the whole surface of the semiconductor substrate (1) so as to bury the first gate portion (3). The semiconductor substrate (1) is removed horizontally from its second major surface side, i.e., from the opposite side of the side of the projected portion (2) to a position (a) at which the insulating layer (4) is formed so as to bury the projected portion (2) is exposed. A second gate portion (5) is formed on such exposed surface.

摘要翻译： 通过使用具有优异的晶体性质的半导体衬底，可以容易地制造横向绝缘栅型场效应晶体管。 突起部分（2）形成在半导体衬底（1）的第一主表面侧上。 在突出部分（2）上形成具有比突出部分（2）小的宽度（长度）的第一门部分（3）。 在半导体衬底（1）的整个表面上形成绝缘层（4），从而埋入第一栅极部分（3）。 半导体衬底（1）从其第二主表面侧，即从突出部分（2）的侧面的相对侧水平移除到形成绝缘层（4）的位置（a），从而 埋设投影部分（2）被暴露。 第二门部（5）形成在这样的暴露表面上。

公开(公告)号：US4894699A

公开(公告)日：1990-01-16

申请号：US302079

申请日：1989-01-25

申请人： Yutaka Hayashi ,  Shigeaki Tomonari ,  Keizi Kakite

发明人： Yutaka Hayashi ,  Shigeaki Tomonari ,  Keizi Kakite

IPC分类号： H01L27/14 ,  H01L27/142 ,  H01L27/144 ,  H01L31/09 ,  H01L31/12

CPC分类号： H01L31/09 ,  H01L27/1443 ,  H01L31/046 ,  H01L2924/0002 ,  H03K2017/6875 ,  Y02E10/50

摘要： An optical control circuit is formed by connecting a photoconductive element and resistive element at their one end to the control electrode of a transistor, while connecting the other end of the photoconductive element to one of output electrodes of the transistor and the other end of the resistive element to a predetermined voltage supply point. With this simple circuit arrangement, an effective input control with respect to the control electrode of the transistor can be realized.

摘要翻译： 通过将光电导元件和电阻元件的一端连接到晶体管的控制电极，同时将光电导元件的另一端连接到晶体管的输出电极和电阻的另一端之一来形成光控制电路 元件连接到预定的电压供应点。 利用这种简单的电路装置，可以实现相对于晶体管的控制电极的有效输入控制。

公开(公告)号：US4868632A

公开(公告)日：1989-09-19

申请号：US216826

申请日：1988-07-08

申请人： Yutaka Hayashi ,  Itsunari Hayabuchi ,  Tatsuo Tsuchiya ,  Seiichi Ishihara

发明人： Yutaka Hayashi ,  Itsunari Hayabuchi ,  Tatsuo Tsuchiya ,  Seiichi Ishihara

IPC分类号： H01L21/8247 ,  H01L29/786 ,  H01L29/788 ,  H01L29/792

CPC分类号： H01L29/78639 ,  H01L29/792

摘要： In an MONOS type nonvolatile semiconductor memory comprising a channel forming semiconductor region between source and drain regions in a surface of a substrate; a tunnel insulating film formed on the channel forming semiconductor region in the surface of the substrate, the tunnel insulating film permitting charge-injection; a silicon nitride film formed as a second insulating film on the tunnel insulating film; a silicon oxide film formed as a third insulating film; and a conductive electrode formed on the silicon oxide film, the silicon nitride film has a composition close to a stoichiometric value of Si.sub.3 N.sub.4 at a portion near an interface with the tunnel insulating film and has a composition of excess silicon at a portion of the thickness of the same film except near the interface with the tunnel insulating film.

摘要翻译： 一种MONOS型非易失性半导体存储器，包括在衬底的表面中在源区和漏区之间形成半导体区的沟道; 隧道绝缘膜形成在衬底表面上形成半导体区的沟道上，隧道绝缘膜允许电荷注入; 在隧道绝缘膜上形成为第二绝缘膜的氮化硅膜; 形成为第三绝缘膜的氧化硅膜; 和形成在氧化硅膜上的导电电极，所述氮化硅膜在与隧道绝缘膜的界面附近的部分处具有接近Si 3 N 4的化学计量值的组成，并且在厚度的一部分具有过量的硅的组成 相同的膜除了与隧道绝缘膜的界面附近。

公开(公告)号：US4823217A

公开(公告)日：1989-04-18

申请号：US91302

申请日：1987-08-27

申请人： Minoru Kato ,  Yutaka Hayashi

发明人： Minoru Kato ,  Yutaka Hayashi

IPC分类号： H01B5/14 ,  G11B5/17 ,  G11B5/48 ,  H01R35/02 ,  H05K1/11 ,  H05K3/34 ,  H05K1/00

CPC分类号： G11B5/486 ,  G11B5/17 ,  H05K1/118 ,  H05K3/3405 ,  H05K3/3452 ,  H05K1/117 ,  H05K2201/09909 ,  H05K2201/10287

摘要： A circuiting device comprising a flexible base member having end portions to be fixed, a movable portion therebetween and conductor patterns carried on the base member. Parts of the portions to be fixed adjacent to the movable portion are covered by protective films which prevent solder from flowing to the movable portion from the portions to be fixed. This arrangement prevents disconnection and short circuit in the conductor patterns on the circuiting device, and facilitates connecting operations.

摘要翻译： 一种电路装置，包括具有待固定的端部的柔性基底构件，其间的可动部分和承载在基底构件上的导体图案。 靠近可动部分固定的部分部分由保护膜覆盖，防止焊料从固定部分流向可动部分。 这种布置可以防止电路装置上的导体图案的断开和短路，并且便于连接操作。

公开(公告)号：US4783006A

公开(公告)日：1988-11-08

申请号：US068466

申请日：1987-06-30

申请人： Yutaka Hayashi ,  Atuo Itoh ,  Hideyo Iida ,  Kikuji Fukai

发明人： Yutaka Hayashi ,  Atuo Itoh ,  Hideyo Iida ,  Kikuji Fukai

IPC分类号： B05B17/04 ,  C23C4/12 ,  C23C18/12 ,  B05B1/00 ,  B05B1/34

CPC分类号： C23C4/12

摘要： A mist supplying device for supplying a film-forming solution to form a thin film on a substrate includes a nozzle having an elongate outlet port, an atomizer coupled to the nozzle for atomizing the film-forming solution, and a disperser movably disposed in the nozzle between the outlet port and the atomizer and having a plurality of substantially uniformly distributed mist passages for passing the atomized film-forming solution in a first flow passage direction therethrough. An air blower is coupled to the atomizer for delivering the atomized film-forming solution into the nozzle. A driver unit is coupled to the disperser for reciprocally moving the mist passages in a second flow passage direction transverse to the first flow passage direction.

摘要翻译： 用于供给成膜溶液以在基材上形成薄膜的雾供应装置包括具有细长出口的喷嘴，与喷嘴连接的用于雾化成膜溶液的雾化器和可移动地设置在喷嘴中的分散器 在所述出口和所述雾化器之间具有多个基本上均匀分布的雾通道，用于使所述雾化膜形成溶液沿第一流动通道方向通过。 鼓风机与雾化器连接，用于将雾化的成膜溶液输送到喷嘴中。 驱动器单元联接到分散器，用于在与第一流动通道方向横切的第二流动通道方向上往复移动雾气通道。

公开(公告)号：US4644091A

公开(公告)日：1987-02-17

申请号：US645059

申请日：1984-08-28

申请人： Yutaka Hayashi ,  Hideyo Iida ,  Toshio Mishuku

发明人： Yutaka Hayashi ,  Hideyo Iida ,  Toshio Mishuku

IPC分类号： H01L31/04 ,  H01L31/0236 ,  H01L31/052 ,  H01L31/06

CPC分类号： H01L31/0236 ,  H01L31/056 ,  Y02B10/12 ,  Y02B10/14 ,  Y02E10/52

摘要： A photoelectric transducer comprising at least a light-transmissive substrate having a relatively flat surface provided on its light-receiving side and an uneven surface provided on its opposite side, and a photoelectric transducing layer provided on the uneven surface of the substrate. The photoelectric transducing layer comprises at least a light-transmissive conductive layer, a semiconductor layer, and a back conductive electrode layer. The back conductive electrode layer comprises a second light-transmissive conductive layer and a conductive layer. The uneven surface on the substrate includes numerous projections, each projection having a triangular section and a shape of pyramidal, ridged roof, or conical type. The projections and the second light-transmissive conductive layer of the uneven back conductive electrode layer elongate the optical path of light beams in the photoelectric transducing layer, and prevent the adherence of dust particles and the abrasion of the photoelectric transducing layer.

摘要翻译： 一种光电变换器，其至少具有设置在其受光侧具有相对平坦的表面的透光性基板和设置在其相对侧上的不平坦表面，以及设置在基板的不平坦表面上的光电转换层。 光电转换层至少包括透光导电层，半导体层和背面导电电极层。 背面导电电极层包括第二透光导电层和导电层。 基板上的不平坦表面包括许多突起，每个突起具有三角形截面和锥形，脊状屋顶或圆锥形的形状。 不平整背面导电电极层的突起和第二透光导电层使光电转换层中的光束的光路伸长，防止灰尘颗粒的附着和光电转换层的磨损。

公开(公告)号：US3950738A

公开(公告)日：1976-04-13

申请号：US487963

申请日：1974-07-12

申请人： Yutaka Hayashi ,  Kiyoko Nagai ,  Yasuo Tarui

发明人： Yutaka Hayashi ,  Kiyoko Nagai ,  Yasuo Tarui

IPC分类号： H01L31/12 ,  G11C11/42 ,  G11C16/04 ,  H01L21/8247 ,  H01L27/146 ,  H01L29/788 ,  H01L29/792 ,  H01L31/00 ,  H01L31/02

CPC分类号： H01L29/792 ,  G11C11/42 ,  G11C16/0408 ,  H01L27/14643 ,  H01L31/00 ,  H01L2224/48472 ,  H01L2924/01014 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/14

摘要： A semiconductor non-volatile optical memory device is constructed by providing light-permeable charge retention means in an insulating layer on a first semiconductor surface into which photo-generated carriers in the surface of the first semiconductor region are injected over the semiconductor-insulator potential barrier by applying reverse bias between the first semiconductor region and a second region forming a rectifying junction with the first semiconductor region. Also disclosed in a non-volatile memory integrated circuit employing one or more of said devices together with light source in the same package. The non-volatile memory integrated circuit operates under low bias voltage and is compatible with a high speed integrated logic circuits.

公开(公告)号：US3946424A

公开(公告)日：1976-03-23

申请号：US497061

申请日：1974-08-13

申请人： Yasuo Tarui ,  Yutaka Hayashi

发明人： Yasuo Tarui ,  Yutaka Hayashi

IPC分类号： H01L21/00 ,  H01L21/223 ,  H01L21/8234 ,  H01L27/00 ,  H01L27/088 ,  H01L29/00 ,  H01L29/06 ,  H01L29/10 ,  H01L29/423 ,  H01L29/45 ,  H01L29/78 ,  H01L27/02

CPC分类号： H01L29/7835 ,  H01L21/00 ,  H01L21/223 ,  H01L21/8234 ,  H01L27/00 ,  H01L27/088 ,  H01L29/00 ,  H01L29/0696 ,  H01L29/1045 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/456 ,  H01L29/7801 ,  H01L29/7802 ,  H01L29/7839

摘要： A high frequency insulated gate field effect transistor comprises a semiconductor body of one type of conductivity, a base region of the same type of conductivity as the semiconductor body but with a higher impurity concentration than the body, and drain and source regions of the opposite type of conductivity. A portion of the base region is disposed between the drain region and the source region and the impurity concentration of the base region is reduced from the source region toward the drain region and is less at its junction with the drain region than that of the drain region. Such transistor can be incorporated in an integrated circuit as an amplifier transistor with a depletion type transistor as a load transistor. A common region serves both as a drain region of the amplifier transistor and a source region of the load transistor. A process of making the transistor and the integrated circuit comprises masking a semiconductor body, forming windows in the mask and successively diffusing through the same window both a first impurity to form the base region and a second impurity to form the source region.

摘要翻译： 高频绝缘栅场效应晶体管包括具有一种导电性的半导体本体，与半导体本体具有相同类型导电性但具有比主体更高的杂质浓度的基极区域，以及相反类型的漏极和源极区域 的电导率。 基极区域的一部分设置在漏极区域和源极区域之间，并且基极区域的杂质浓度从源极区域朝向漏极区域减小，并且在与漏极区域的接合处比漏极区域的杂质浓度更小 。 这种晶体管可以作为具有作为负载晶体管的耗尽型晶体管的放大器晶体管集成在集成电路中。 公共区域用作放大器晶体管的漏极区域和负载晶体管的源极区域。 制造晶体管和集成电路的过程包括掩蔽半导体本体，在掩模中形成窗口，并通过同一窗口连续地扩散第一杂质以形成基极区域和第二杂质以形成源极区域。