摘要:
A power source device for a bubble memory unit, wherein there is supplied a first DC voltage E.sub.c which is applied to control circuitry for controlling the reading and writing of data, a second DC voltage signal E.sub.d which is applied to drive circuitry for driving a bubble memory element, and a memory signal M.sub.e which enables data to be written in or read from the bubble memory element, the signals E.sub.c, E.sub.d and M.sub.e being made to rise and fall according to a prescribed sequence as a commercial power supply is connected and disconnected. The power source device includes first and second DC power source circuits, a comparator circuit for comparing the magnitude of the first DC voltage E.sub.c with a reference level V.sub.M having a value greater than an allowable lower limit value, and a delay circuit. The second DC power source circuit is actuated following a prescribed time delay which begins when the value of signal E.sub.c surpasses the reference level V.sub.M at the time that the commercial power supply is connected, and the memory enable signal M.sub.e is produced after the second DC power source circuit has been actuated. The memory enable signal M.sub.e is made to vanish when the magnitude of signal E.sub.c drops below the reference potential V.sub.m at the time that the commercial power supply is disconnected, the second DC power source circuit being rendered non-operational following a prescribed time delay.
摘要:
Method and apparatus for processing reduced iron in which granular iron oxide charged into a vertical furnace is reduced by a reducing gas comprising mainly carbon monoxide and hydrogen, a substantial portion of the waste gas generated in the reduction process being regenerated in a recirculating system. The reduced iron which has been reduced in the vertical furnace is continuously discharged at a temperature above 500.degree. C under isolation from the exterior atmosphere and is received in a plurality of air tight, sealable component adjusting receptacles. The reduced iron received in the receptacles is subjected to component adjustment at a temperature ranging from 700.degree. to 1100.degree. C by using the regenerated reducing gas and, thereafter, it is discharged from the receptacles under isolation from the exterior atmosphere so as to be received in air tight sealable cooling receptacles thereby cooling the same to a temperature lower than 100.degree. C, the reduced iron being thereafter discharged from the receptacles.
摘要:
Disclosed herein is a synchronization circuit including: a first phase-locked loop circuit; a second phase-locked loop circuit; a first output circuit; a second output circuit; a first detection circuit; a second detection circuit; and a control circuit.
摘要:
Disclosed herein is an information processing apparatus including: a demodulation FFT processing section configured to carry out an FFT process on a demodulation-related signal extracted by making use of a demodulation FFT window from every symbol of a received OFDM signal and output the frequency-domain signal; a control FFT processing section configured to carry out a process equivalent to an FFT process on a control-related signal extracted by making use of a control FFT window from every symbol of the received OFDM signal and output the frequency-domain signal; a transmission-line information estimation section; an equalization section; a reception-quality computation/comparison section; and an FFT-window position control section configured to control the demodulation FFT window to be used by the demodulation FFT processing section and the control FFT window to be used by the control FFT processing section on the basis of a comparison result produced by the reception-quality computation/comparison section.
摘要:
A chemical mechanical polishing method, including: chemically and mechanically polishing a polishing target surface by continuously performing a first polishing step and a second polishing step having a polishing rate lower than a polishing rate of the first polishing step, a chemical mechanical polishing aqueous dispersion used in the first polishing step and the second polishing step being a mixture of an aqueous dispersion and an aqueous solution, and the polishing rate being changed between the first polishing step and the second polishing step by changing a mixing ratio of the aqueous dispersion and the aqueous solution.
摘要:
A chemical mechanical polishing method, including: chemically and mechanically polishing a polishing target surface by continuously performing a first polishing step and a second polishing step having a polishing rate lower than a polishing rate of the first polishing step, a chemical mechanical polishing aqueous dispersion used in the first polishing step and the second polishing step being a mixture of an aqueous dispersion and an aqueous solution, and the polishing rate being changed between the first polishing step and the second polishing step by changing a mixing ratio of the aqueous dispersion and the aqueous solution.
摘要:
An OFDM receiver may include OFDM-signal receiving means for receiving an orthogonal frequency division multiplexing (OFDM) signal; channel-characteristic estimating means for estimating a channel characteristic using pilot signals in the OFDM signal received by the OFDM-signal receiving means; and transmission-distortion compensating means for applying, on the basis of the channel characteristic estimated by the channel-characteristic estimating means, processing for compensating for transmission distortion to the OFDM signal received by the OFDM-signal receiving means. The channel-characteristic estimating means may include plural kinds of time-direction-channel estimating means used for the estimation of a channel characteristic, and switching control means for switching these estimating means according to a state of a channel.
摘要:
An aqueous dispersion for chemical mechanical polishing contains water, a polyvinylpyrrolidone having a weight-average molecular weight exceeding 200,000, an oxidant, a protective film-forming agent and abrasive grains, the protective film-forming agent containing a first metal compound-forming agent which forms a water-insoluble metal compound, and a second metal compound-forming agent which forms a water-soluble metal compound. The aqueous dispersion is capable of uniformly and stably polishing a metal film at low friction without causing defects in a metal film and an insulating film.
摘要:
A chemical/mechanical polishing method for polishing an object to be polished with an irregular surface, having a substrate with convexities and concavities, a stopper layer formed on the convexities of the substrate, and an embedded insulating layer formed to cover the concavities of the substrate and the stopper layer, wherein the method is characterized comprising a first polishing step of flattening the embedded insulating layer using a slurry (A) which can maintain the polishing speed at 500 Å/min or less and a second polishing step of further polishing the embedded insulating layer to cause the stopper layer on the convexities to be exposed using a slurry (B) which can maintain the polishing speed at 600 Å/min or more. The method is useful for flattening wafers during shallow trench isolation (STI) in manufacturing semiconductor devices.
摘要:
A chemical mechanical polishing aqueous dispersion comprises abrasives in a concentration of not more than 1.5% by mass, wherein the abrasives comprise ceria and have an average dispersed particle diameter of not less than 1.0 μm. A chemical mechanical polishing method comprises polishing an insulating film by the use of the chemical mechanical polishing aqueous dispersion. By the use of the chemical mechanical polishing aqueous dispersion, occurrence of polishing scratches can be suppressed without lowering a removal rate.