公开(公告)号：US08015984B2

公开(公告)日：2011-09-13

申请号：US11922502

申请日：2006-06-16

申请人： Koukichi Hiroshiro ,  Yuji Kamikawa ,  Takayuki Toshima ,  Naoki Shindo

发明人： Koukichi Hiroshiro ,  Yuji Kamikawa ,  Takayuki Toshima ,  Naoki Shindo

IPC分类号： B08B3/00

CPC分类号： H01L21/02057 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67057

摘要： Disclosed is a substrate processing apparatus for cleaning and drying a substrate such as a semiconductor wafer. This substrate processing apparatus includes a liquid processing unit for processing a substrate by immersing the substrate in stored purified water, a drying unit arranged above the liquid processing unit and configured to dry the substrate, a substrate transfer apparatus for transferring the substrate between the liquid processing unit and drying unit, a fluid supply mechanism for supplying a fluid mixture containing vapor or mist of purified water and vapor or mist of a volatile organic solvent to the drying unit, and a controller for controlling the supply of the fluid mixture.

摘要翻译： 公开了一种用于清洗和干燥诸如半导体晶片的衬底的衬底处理装置。 该基板处理装置包括：液体处理单元，用于通过将基板浸渍在储存的净化水中来处理基板;干燥单元，布置在液体处理单元上方并构造成干燥基板;基板输送装置，用于在液体处理 单元和干燥单元，用于将含有纯净水的蒸气或雾的挥发性有机溶剂的蒸气或雾的流体混合物供给到干燥单元的流体供给机构，以及用于控制流体混合物的供给的控制器。

公开(公告)号：US07897498B2

公开(公告)日：2011-03-01

申请号：US11794325

申请日：2005-11-29

申请人： Glenn Gale ,  Yoshihiro Hirota ,  Yusuke Muraki ,  Genji Nakamura ,  Masato Kushibiki ,  Naoki Shindo ,  Akitaka Shimizu ,  Shigeo Ashigaki ,  Yoshihiro Kato

发明人： Glenn Gale ,  Yoshihiro Hirota ,  Yusuke Muraki ,  Genji Nakamura ,  Masato Kushibiki ,  Naoki Shindo ,  Akitaka Shimizu ,  Shigeo Ashigaki ,  Yoshihiro Kato

IPC分类号： H01L21/336 ,  H01L21/8324 ,  H01L21/76 ,  H01L21/3205 ,  H01L21/4763

CPC分类号： H01L21/28123 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/32139 ,  Y10S438/931

摘要： The present invention is a method of manufacturing a semiconductor device from a layered body including: a semiconductor substrate; a high dielectric film formed on the semiconductor substrate; and an SiC-based film formed on a position upper than the high dielectric film, the SiC-based film having an anti-reflective function and a hardmask function. The present invention comprises a plasma-processing step for plasma-processing the SiC-based film and the high dielectric film to modify the SiC-based film and the high dielectric film by an action of a plasma; and a cleaning step for wet-cleaning the SiC-based film and the high dielectric film modified in the plasma-processing step to collectively remove the SiC-based film and the high dielectric film.

摘要翻译： 本发明是一种从层叠体制造半导体器件的方法，包括：半导体衬底; 形成在所述半导体基板上的高电介质膜; 以及形成在高于高介电膜的位置的SiC基膜，所述SiC基膜具有抗反射功能和硬掩模功能。 本发明包括等离子体处理步骤，用于等离子体处理SiC基膜和高介电膜，以通过等离子体的作用改性SiC基膜和高介电膜; 以及用于湿式清洁在等离子体处理步骤中改性的SiC基膜和高介电膜的清洁步骤，以共同地去除SiC基膜和高介电膜。

公开(公告)号：US07896973B2

公开(公告)日：2011-03-01

申请号：US10779397

申请日：2004-02-13

申请人： Naoki Shindo ,  Tadashi Iino

发明人： Naoki Shindo ,  Tadashi Iino

IPC分类号： B08B3/00 ,  B08B7/04

CPC分类号： H01L21/6708 ,  Y10S134/902

摘要： This substrate processing apparatus supplies wafers W accommodated in a closed processing container 10 with ozone gas and steam for processing the wafers W. The apparatus includes an ozone-gas generator 40 for supplying the ozone gas into the processing container 10, a steam generator 30 for supplying the steam into the processing container 10 and a steam nozzle 35 arranged in the processing container 10 and connected to the steam generator 30. The steam nozzle 35 is equipped with a nozzle body 35a having a plurality of steam ejecting orifices 35f formed at appropriate intervals and a heater 35h for preventing dewdrops of the steam from being produced in the nozzle body 35a. Consequently, it is possible to prevent the formation of dewdrops of solvent steam, which may produce origins of particles in the closed processing container, unevenness in cleaning (etching), etc., and also possible to improve the processing efficiency.

摘要翻译： 该基板处理装置将容纳在封闭处理容器10内的晶片W供给臭氧气体和蒸汽用于处理晶片W.该装置包括用于向处理容器10供给臭氧气体的臭氧气体发生器40，用于 将蒸汽供给到处理容器10和设置在处理容器10中并连接到蒸汽发生器30的蒸汽喷嘴35.蒸汽喷嘴35配备有喷嘴体35a，喷嘴体35a具有以适当间隔形成的多个蒸汽喷射孔35f 以及用于防止在喷嘴体35a中产生蒸汽的露珠的加热器35h。 因此，可以防止在封闭的加工容器中产生颗粒的起因，清洗（蚀刻）等不均匀的溶剂蒸汽的露珠的形成，也可以提高加工效率。

公开(公告)号：US20080268655A1

公开(公告)日：2008-10-30

申请号：US11794325

申请日：2005-11-29

申请人： Glenn Gale ,  Yoshihiro Hirota ,  Yusuke Muraki ,  Genji Nakamura ,  Masato Kushibiki ,  Naoki Shindo ,  Akitaka Shimizu ,  Shigeo Ashigaki ,  Yoshihiro Kato

发明人： Glenn Gale ,  Yoshihiro Hirota ,  Yusuke Muraki ,  Genji Nakamura ,  Masato Kushibiki ,  Naoki Shindo ,  Akitaka Shimizu ,  Shigeo Ashigaki ,  Yoshihiro Kato

IPC分类号： H01L21/469 ,  H01L21/00

CPC分类号： H01L21/28123 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/32139 ,  Y10S438/931

摘要： The present invention is a method of manufacturing a semiconductor device from a layered body including: a semiconductor substrate; a high dielectric film formed on the semiconductor substrate; and an SiC-based film formed on a position upper than the high dielectric film, the SiC-based film having an anti-reflective function and a hardmask function. The present invention comprises a plasma-processing step for plasma-processing the SiC-based film and the high dielectric film to modify the SiC-based film and the high dielectric film by an action of a plasma; and a cleaning step for wet-cleaning the SiC-based film and the high dielectric film modified in the plasma-processing step to collectively remove the SiC-based film and the high dielectric film.

摘要翻译： 本发明是一种从层叠体制造半导体器件的方法，包括：半导体衬底; 形成在所述半导体基板上的高电介质膜; 以及形成在高于高介电膜的位置的SiC基膜，所述SiC基膜具有抗反射功能和硬掩模功能。 本发明包括等离子体处理步骤，用于等离子体处理SiC基膜和高介电膜，以通过等离子体的作用改性SiC基膜和高介电膜; 以及用于湿式清洁在等离子体处理步骤中改性的SiC基膜和高介电膜的清洁步骤，以共同地去除SiC基膜和高介电膜。

公开(公告)号：US20080086312A1

公开(公告)日：2008-04-10

申请号：US11822907

申请日：2007-07-11

申请人： Hideyuki Kakuno ,  Naoki Shindo

发明人： Hideyuki Kakuno ,  Naoki Shindo

IPC分类号： G10L19/00

CPC分类号： H04S3/008 ,  G10L19/008 ,  H04N21/439 ,  H04S2420/03

摘要： An audio decoding device comprises an audio decoding section for decoding first stream data and second stream data to generate two pieces of audio data and a data processing parameter, an external setting section in which a parameter corresponding to the data processing parameter is set, and an audio data processing section for processing the two pieces of audio data. When the data processing parameter contained in the second stream data is inappropriate, the audio data processing section performs data processing using the parameter set in the external setting section. When the data processing parameter contained in the second stream data is appropriate, the audio data processing section performs data processing using the data processing parameter generated by the audio decoding section.

摘要翻译： 音频解码装置包括用于解码第一流数据的音频解码部分和第二数据流数据以产生两条音频数据和数据处理参数，其中设置与数据处理参数对应的参数的外部设置部分，以及 音频数据处理部分，用于处理两个音频数据。 当包含在第二流数据中的数据处理参数不合适时，音频数据处理部分使用在外部设置部分中设置的参数进行数据处理。 当包含在第二流数据中的数据处理参数适当时，音频数据处理部分使用由音频解码部分生成的数据处理参数进行数据处理。

公开(公告)号：US20070113423A1

公开(公告)日：2007-05-24

申请号：US11594232

申请日：2006-11-08

申请人： Hiroshi Tanaka ,  Hidetoshi Nakao ,  Naoki Shindo ,  Atushi Yamashita ,  Tsukasa Hirayama ,  Kotaro Tsurusaki

发明人： Hiroshi Tanaka ,  Hidetoshi Nakao ,  Naoki Shindo ,  Atushi Yamashita ,  Tsukasa Hirayama ,  Kotaro Tsurusaki

IPC分类号： F26B3/00

CPC分类号： H01L21/67028 ,  H01L21/67034 ,  Y10S118/90 ,  Y10S134/902

摘要： The present invention provides a drying apparatus capable of satisfactorily drying a workpiece by using a dry vapor The drying apparatus has a control device for controlling a supply of a carrier gas and a supply of a dry vapor into a processing tank holding workpieces. A drying process carries out a carrier gas supply step of supplying the carrier gas and a mixed fluid supply step of supplying a mixed fluid prepared by mixing the carrier gas and the dry vapor alternately. A total mixed fluid supply time for which the mixed fluid supply step is executed is not shorter than 57% of a total processing time for which the carrier gas supply step and the mixed fluid supply step are executed.

摘要翻译： 本发明提供一种干燥装置，其能够通过使用干燥蒸汽令工件干燥良好。干燥装置具有控制装置，用于控制载气的供给和干燥蒸气的供给到保持工件的处理罐中。 干燥工序进行供给载气的载气供给工序以及混合流体供给工序，供给通过交替地混合载气和干燥蒸气而制备的混合流体。 执行混合流体供给步骤的总混合流体供给时间不低于执行载气供给步骤和混合流体供给步骤的总处理时间的57％。

公开(公告)号：US20050087133A1

公开(公告)日：2005-04-28

申请号：US10779397

申请日：2004-02-13

申请人： Naoki Shindo ,  Tadashi Iino

发明人： Naoki Shindo ,  Tadashi Iino

IPC分类号： H01L21/304 ,  H01L21/00 ,  C23C16/00

CPC分类号： H01L21/6708 ,  Y10S134/902

摘要： This substrate processing apparatus supplies wafers W accommodated in a closed processing container 10 with ozone gas and steam for processing the wafers W. The apparatus includes an ozone-gas generator 40 for supplying the ozone gas into the processing container 10, a steam generator 30 for supplying the steam into the processing container 10 and a steam nozzle 35 arranged in the processing container 10 and connected to the steam generator 30. The steam nozzle 35 is equipped with a nozzle body 35a having a plurality of steam ejecting orifices 35f formed at appropriate intervals and a heater 35h for preventing dewdrops of the steam from being produced in the nozzle body 35a. Consequently, it is possible to prevent the formation of dewdrops of solvent steam, which may produce origins of particles in the closed processing container, unevenness in cleaning (etching), etc., and also possible to improve the processing efficiency.

摘要翻译： 该基板处理装置将容纳在封闭处理容器10内的晶片W供给臭氧气体和蒸汽用于处理晶片W.该装置包括用于向处理容器10供给臭氧气体的臭氧气体发生器40，用于 将蒸汽供应到处理容器10中，以及布置在处理容器10中并连接到蒸汽发生器30的蒸汽喷嘴35.蒸汽喷嘴35配备有喷嘴体35a，喷嘴体35a具有形成在多个蒸汽喷射孔35f 适当的间隔和加热器35h，用于防止在喷嘴体35a中产生蒸汽的露珠。 因此，可以防止在封闭的加工容器中产生颗粒的起因，清洗（蚀刻）等不均匀的溶剂蒸汽的露珠的形成，也可以提高加工效率。

公开(公告)号：US20050051246A1

公开(公告)日：2005-03-10

申请号：US10957003

申请日：2004-10-01

申请人： Takayuki Toshima ,  Naoki Shindo ,  Tadashi Iino

发明人： Takayuki Toshima ,  Naoki Shindo ,  Tadashi Iino

IPC分类号： G03F7/42 ,  B08B5/00 ,  H01L21/00 ,  H01L21/027 ,  H01L21/302 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/311 ,  C22B9/05

CPC分类号： H01L21/6708 ,  H01L21/31138 ,  Y10S134/902

摘要： Resists can be removed while metal contamination of wafers, etc. and generation of particles, and growth of oxide films are suppressed. An ozone gas feed system 40 for feeding ozone gas 2 into a processing vessel 10 holding wafers W, and a steam feed means 30 for feeding steam 1 into the processing vessel 10 are provided. An on-off valve 49 inserted in the ozone gas feed pipe 42, an on-off valve 36 inserted in the steam feed pipe 34 and a switch 48 and an on-off valve 49 of ozone gas generator 41 are connected to CPU 100 which is control means and are controlled by the CPU 100. Ozone gas 2 is fed into the processing vessel 10 to pressurize the atmosphere surrounding the wafers W, and then steam 1 is fed into the processing vessel 10 while ozone gas 2 is fed into the processing vessel 10, whereby a resist of the wafers W can be removed with the steam 1 and the ozone 2 while metal corrosion, etc. can be prevented.

摘要翻译： 可以去除抗蚀剂，同时抑制晶片等的金属污染和颗粒的产生以及氧化膜的生长被抑制。 提供用于将臭氧气体2供给到保持晶片W的处理容器10中的臭氧气体供给系统40，以及用于将蒸汽1供给到处理容器10中的蒸汽供给装置30。 插入臭氧气体供给管42的开闭阀49，插入蒸汽供给管34的开关阀36，臭氧气体发生器41的开关48和开关阀49连接到CPU100，CPU100 是控制装置，由CPU100控制。臭氧气体2被送入处理容器10中以对周围的晶片W加压，然后将蒸汽1送入处理容器10，同时将臭氧气体2送入处理 容器10，由此可以用蒸汽1和臭氧2除去晶片W的抗蚀剂，同时可以防止金属腐蚀等。

公开(公告)号：US06817368B2

公开(公告)日：2004-11-16

申请号：US09971136

申请日：2001-10-03

申请人： Takayuki Toshima ,  Naoki Shindo ,  Tadashi Iino

发明人： Takayuki Toshima ,  Naoki Shindo ,  Tadashi Iino

IPC分类号： B08B302

CPC分类号： H01L21/6708 ,  H01L21/31138 ,  Y10S134/902

摘要： Resists can be removed while metal contamination of wafers, etc. and generation of particles, and growth of oxide films are suppressed. An ozone gas feed system 40 for feeding ozone gas 2 into a processing vessel 10 holding wafers W, and a steam feed means 30 for feeding steam 1 into the processing vessel 10 are provided. An on-off valve 49 inserted in the ozone gas feed pipe 42, an on-off valve 36 inserted in the steam feed pipe 34 and a switch 48 and an on-off valve 49 of ozone gas generator 41 are connected to CPU 100 which is control means and are controlled by the CPU 100. Ozone gas 2 is fed into the processing vessel 10 to pressurize the atmosphere surrounding the wafers W, and then steam 1 is fed into the processing vessel 10 while ozone gas 2 is fed into the processing vessel 10, whereby a resist of the wafers W can be removed with the steam 1 and the ozone 2 while metal corrosion, etc. can be prevented.

摘要翻译： 可以去除抗蚀剂，同时抑制晶片等的金属污染和颗粒的产生以及氧化膜的生长被抑制。 提供用于将臭氧气体2供给到保持晶片W的处理容器10中的臭氧气体供给系统40，以及用于将蒸汽1供给到处理容器10中的蒸汽供给装置30。 插入臭氧气体供给管42的开闭阀49，插入蒸汽供给管34的开关阀36，臭氧气体发生器41的开关48和开关阀49连接到CPU100，CPU100 是控制装置，由CPU100控制。臭氧气体2被送入处理容器10中以对周围的晶片W加压，然后将蒸汽1送入处理容器10，同时将臭氧气体2送入处理 容器10，由此可以利用蒸汽1和臭氧2除去晶片W的抗蚀剂，同时可以防止金属腐蚀等。

公开(公告)号：US06592678B1

公开(公告)日：2003-07-15

申请号：US09689408

申请日：2000-10-12

申请人： Yuji Kamikawa ,  Naoki Shindo ,  Shigenori Kitahara ,  Miyako Yamasaka

发明人： Yuji Kamikawa ,  Naoki Shindo ,  Shigenori Kitahara ,  Miyako Yamasaka

IPC分类号： B08B304

CPC分类号： H01L21/02052 ,  B08B3/08 ,  B24B37/013 ,  H01L21/67057 ,  H01L22/26 ,  Y10S134/902

摘要： A cleaning equipment generally comprises: a cleaning bath 30 for storing therein a cleaning solution to allow a semiconductor wafer W to be dipped in the cleaning solution to clean the surface of the wafer W; a cleaning solution supply pipe 33 for connecting the cleaning bath 30 to a pure water supply source 31; a chemical storing container 34 for storing therein a chemical; a chemical supply pipe 36 for connecting the cleaning solution supply pipe 33 to the chemical storing container 34 via an injection shut-off valve 35; and a diaphragm pump 37 for injecting a predetermined amount of chemical from the chemical storing container 34 into pure water flowing through the cleaning solution supply pipe 33. The temperature of the cleaning solution in the cleaning bath 30 is detected by, e.g., a temperature sensor 44. On the basis of a detection signal outputted from the temperature sensor 44, the amount of the chemical injected by the diaphragm pump 37 is controlled so that the concentration of the chemical is a predetermined concentration. Thus, a predetermined amount of chemical can be injected so as to clean the wafer W with a predetermined concentration of chemical.

摘要翻译： 清洁设备通常包括：清洗槽3​​0，用于在其中存储清洁溶液以允许将半导体晶片W浸入清洁溶液中以清洁晶片W的表面; 用于将清洗槽30连接到纯水供给源31的清洗液供给管33; 用于在其中存储化学品的化学品储存容器34; 用于经由注入截止阀35将清洗液供给管33与药剂收容容器34连接的化学品供给管36; 以及用于将预定量的化学品从化学物质储存容器34注入到通过清洁溶液供应管33的纯水的隔膜泵37.清洗槽30中的清洁溶液的温度例如由温度传感器 基于从温度传感器44输出的检测信号，控制由隔膜泵37喷射的化学物质的量，使得化学品的浓度为预定浓度。 因此，可以注入预定量的化学品以便以预定浓度的化学品清洁晶片W.