公开(公告)号：US09396933B2

公开(公告)日：2016-07-19

申请号：US13868385

申请日：2013-04-23

申请人： Mingwei Zhu ,  Rongjun Wang ,  Nag B. Patibandia ,  Xianmin Tang ,  Vivek Agrawal ,  Cheng-Hsiung Tsai ,  Muhammad Rasheed ,  Dinesh Saigal ,  Praburam Gopal Raja ,  Omkaram Nalamasu ,  Anantha Subramani

发明人： Mingwei Zhu ,  Rongjun Wang ,  Nag B. Patibandia ,  Xianmin Tang ,  Vivek Agrawal ,  Cheng-Hsiung Tsai ,  Muhammad Rasheed ,  Dinesh Saigal ,  Praburam Gopal Raja ,  Omkaram Nalamasu ,  Anantha Subramani

IPC分类号： H01L21/02 ,  H01L29/205 ,  H01L33/00 ,  C30B23/02 ,  C30B29/40 ,  H01L33/12

CPC分类号： H01L33/12 ,  C30B23/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02661 ,  H01L29/205 ,  H01L33/007 ,  H01L33/06 ,  H01L33/32

摘要： Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.

摘要翻译： 描述了具有物理气相沉积（PVD）形成的氮化铝缓冲层的氮化镓基光器件的制造。 还描述了PVD AlN缓冲层的工艺条件。 还描述了PVD氮化铝缓冲层的基板预处理。 在一个实例中，在衬底上制造缓冲层的方法包括预处理衬底的表面。 该方法还涉及从容纳在具有氮基气体或等离子体的物理气相沉积（PVD）室中的含铝靶反应溅射基板表面上的氮化铝（AlN）层。

公开(公告)号：US08558299B2

公开(公告)日：2013-10-15

申请号：US13157164

申请日：2011-06-09

申请人： Yong Cao ,  Xianmin Tang ,  Srinivas Gandikota ,  Wei D. Wang ,  Zhendong Liu ,  Kevin Moraes ,  Muhammad M. Rasheed ,  Thanh X. Nguyen ,  Ananthkrishna Jupudi

发明人： Yong Cao ,  Xianmin Tang ,  Srinivas Gandikota ,  Wei D. Wang ,  Zhendong Liu ,  Kevin Moraes ,  Muhammad M. Rasheed ,  Thanh X. Nguyen ,  Ananthkrishna Jupudi

IPC分类号： H01L29/788

CPC分类号： H01L21/28079 ,  C23C14/165 ,  C23C14/345 ,  C23C14/35 ,  H01L21/28088 ,  H01L21/2855 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/78

摘要： Embodiments described herein provide a semiconductor device and methods and apparatuses of forming the same. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. The gate electrode stack includes a conductive film layer on a gate dielectric layer, a refractory metal nitride film layer on the conductive film layer, a silicon-containing film layer on the refractory metal nitride film layer, and a tungsten film layer on the silicon-containing film layer. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal nitride film layer on the conductive film layer, depositing a silicon-containing film layer on the refractory metal nitride film layer, and depositing a tungsten film layer on the silicon-containing film layer.

摘要翻译： 本文所述的实施例提供了一种半导体器件及其形成方法和装置。 半导体器件包括在源极和漏极区域之间的衬底上具有源极和漏极区域以及栅电极堆叠的衬底。 栅极电极堆叠包括在栅极介电层上的导电膜层，导电膜层上的难熔金属氮化物膜层，难熔金属氮化物膜层上的含硅膜层，以及硅 - 含有膜层。 在一个实施例中，该方法包括将衬底定位在处理室内，其中衬底包括源极和漏极区域，源极和漏极区域之间的栅极介电层以及栅极电介质层上的导电膜层。 该方法还包括在导电膜层上沉积难熔金属氮化物膜层，在难熔金属氮化物膜层上沉积含硅膜层，并在含硅膜层上沉积钨膜层。

公开(公告)号：US20110303960A1

公开(公告)日：2011-12-15

申请号：US13157164

申请日：2011-06-09

申请人： YONG CAO ,  Xianmin Tang ,  Srinivas Gandikota ,  Wei D. Wang ,  Zhendong Liu ,  Kevin Moraes ,  Muhammad M. Rasheed ,  Thanh X. Nguyen ,  Ananthkrishna Jupudi

发明人： YONG CAO ,  Xianmin Tang ,  Srinivas Gandikota ,  Wei D. Wang ,  Zhendong Liu ,  Kevin Moraes ,  Muhammad M. Rasheed ,  Thanh X. Nguyen ,  Ananthkrishna Jupudi

IPC分类号： H01L29/788 ,  H01L21/283 ,  C23C14/34 ,  H01L21/3205

CPC分类号： H01L21/28079 ,  C23C14/165 ,  C23C14/345 ,  C23C14/35 ,  H01L21/28088 ,  H01L21/2855 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/78

摘要： Embodiments described herein provide a semiconductor device and methods and apparatuses of forming the same. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. The gate electrode stack includes a conductive film layer on a gate dielectric layer, a refractory metal nitride film layer on the conductive film layer, a silicon-containing film layer on the refractory metal nitride film layer, and a tungsten film layer on the silicon-containing film layer. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal nitride film layer on the conductive film layer, depositing a silicon-containing film layer on the refractory metal nitride film layer, and depositing a tungsten film layer on the silicon-containing film layer.

摘要翻译： 本文所述的实施例提供了一种半导体器件及其形成方法和装置。 半导体器件包括在源极和漏极区域之间的衬底上具有源极和漏极区域以及栅电极堆叠的衬底。 栅极电极堆叠包括在栅极电介质层上的导电膜层，导电膜层上的难熔金属氮化物膜层，难熔金属氮化物膜层上的含硅膜层，以及硅 - 含有膜层。 在一个实施例中，该方法包括将衬底定位在处理室内，其中衬底包括源极和漏极区域，源极和漏极区域之间的栅极介电层以及栅极电介质层上的导电膜层。 该方法还包括在导电膜层上沉积难熔金属氮化物膜层，在难熔金属氮化物膜层上沉积含硅膜层，并在含硅膜层上沉积钨膜层。

公开(公告)号：US20110220488A1

公开(公告)日：2011-09-15

申请号：US12723187

申请日：2010-03-12

申请人： John C. Forster ,  Xianmin Tang

发明人： John C. Forster ,  Xianmin Tang

IPC分类号： C23C14/34

CPC分类号： H01J37/3491 ,  B23K1/0008 ,  B23K31/02 ,  C23C14/3407 ,  H01J37/3435 ,  H01J37/3441 ,  H01J2237/332 ,  Y10T29/49826 ,  Y10T29/49947

摘要： Improved designs of target assemblies and darkspace shields are disclosed. Methods of improving darkspace gap in sputtering chambers and sputtering chambers having an improved darkspace gap are also disclosed. Disclosed is a target assembly having a substantially coplanar backing plate and a target are vertically spaced from the darkspace shield.

摘要翻译： 公开了改进的目标组件和暗区屏蔽的设计。 还公开了改善暗室间隙的溅射室和溅射室中的暗空隙的改进方法。 公开了一种目标组件，其具有基本上共面的背板，并且靶与暗空间屏蔽件垂直间隔开。

公开(公告)号：US20100089748A1

公开(公告)日：2010-04-15

申请号：US12252224

申请日：2008-10-15

申请人： JOHN C.FORSTER ,  Daniel J. Hoffman ,  John A. Pipitone ,  Xianmin Tang ,  RongJun Wang

发明人： JOHN C.FORSTER ,  Daniel J. Hoffman ,  John A. Pipitone ,  Xianmin Tang ,  RongJun Wang

IPC分类号： C23C14/34 ,  B32B37/12

CPC分类号： C23C14/3407 ,  H01J37/32082 ,  H01J37/3408 ,  H01J37/347 ,  Y10T156/10

摘要： The present invention generally includes a sputtering target assembly that may be used in an RF sputtering process. The sputtering target assembly may include a backing plate and a sputtering target. The backing plate may be shaped to have one or more fins that extend from the backing plate towards the sputtering target. The sputtering target may be bonded to the fins of the backing plate. The RF current utilized during a sputtering process will be applied to the sputtering target at the one or more fin locations. The fins may extend from the backing plate at a location that corresponds to a magnetic field produced by a magnetron that may be disposed behind the backing plate. By controlling the location where the RF current is coupled to the sputtering target to be aligned with the magnetic field, the erosion of the sputtering target may be controlled.

摘要翻译： 本发明通常包括可用于RF溅射工艺中的溅射靶组件。 溅射靶组件可以包括背板和溅射靶。 背板可以被成形为具有从背板朝向溅射靶延伸的一个或多个翅片。 溅射靶可以结合到背板的翅片上。 在溅射过程中使用的RF电流将被施加到在一个或多个鳍位置处的溅射靶。 翅片可以在对应于可以设置在背板后面的磁控管产生的磁场的位置处从背板延伸。 通过控制RF电流耦合到溅射靶以与磁场对准的位置，可以控制溅射靶的侵蚀。