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1.发明授权Semiconductor device with gate electrode stack including low resistivity tungsten and method of forming 有权具有包括低电阻率钨的栅电极堆叠的半导体器件和形成方法公开(公告)号：US08558299B2
公开(公告)日：2013-10-15
申请号：US13157164
申请日：2011-06-09
申请人： Yong Cao , Xianmin Tang , Srinivas Gandikota , Wei D. Wang , Zhendong Liu , Kevin Moraes , Muhammad M. Rasheed , Thanh X. Nguyen , Ananthkrishna Jupudi
发明人： Yong Cao , Xianmin Tang , Srinivas Gandikota , Wei D. Wang , Zhendong Liu , Kevin Moraes , Muhammad M. Rasheed , Thanh X. Nguyen , Ananthkrishna Jupudi
IPC分类号： H01L29/788
CPC分类号： H01L21/28079 , C23C14/165 , C23C14/345 , C23C14/35 , H01L21/28088 , H01L21/2855 , H01L29/4966 , H01L29/517 , H01L29/78
摘要： Embodiments described herein provide a semiconductor device and methods and apparatuses of forming the same. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. The gate electrode stack includes a conductive film layer on a gate dielectric layer, a refractory metal nitride film layer on the conductive film layer, a silicon-containing film layer on the refractory metal nitride film layer, and a tungsten film layer on the silicon-containing film layer. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal nitride film layer on the conductive film layer, depositing a silicon-containing film layer on the refractory metal nitride film layer, and depositing a tungsten film layer on the silicon-containing film layer.
摘要翻译： 本文所述的实施例提供了一种半导体器件及其形成方法和装置。 半导体器件包括在源极和漏极区域之间的衬底上具有源极和漏极区域以及栅电极堆叠的衬底。 栅极电极堆叠包括在栅极介电层上的导电膜层，导电膜层上的难熔金属氮化物膜层，难熔金属氮化物膜层上的含硅膜层，以及硅 - 含有膜层。 在一个实施例中，该方法包括将衬底定位在处理室内，其中衬底包括源极和漏极区域，源极和漏极区域之间的栅极介电层以及栅极电介质层上的导电膜层。 该方法还包括在导电膜层上沉积难熔金属氮化物膜层，在难熔金属氮化物膜层上沉积含硅膜层，并在含硅膜层上沉积钨膜层。
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2.发明申请LOW RESISTIVITY TUNGSTEN PVD WITH ENHANCED IONIZATION AND RF POWER COUPLING 有权具有增强离子化和射频功率耦合的低电阻TUNGSTEN PVD公开(公告)号：US20110303960A1
公开(公告)日：2011-12-15
申请号：US13157164
申请日：2011-06-09
申请人： YONG CAO , Xianmin Tang , Srinivas Gandikota , Wei D. Wang , Zhendong Liu , Kevin Moraes , Muhammad M. Rasheed , Thanh X. Nguyen , Ananthkrishna Jupudi
发明人： YONG CAO , Xianmin Tang , Srinivas Gandikota , Wei D. Wang , Zhendong Liu , Kevin Moraes , Muhammad M. Rasheed , Thanh X. Nguyen , Ananthkrishna Jupudi
IPC分类号： H01L29/788 , H01L21/283 , C23C14/34 , H01L21/3205
CPC分类号： H01L21/28079 , C23C14/165 , C23C14/345 , C23C14/35 , H01L21/28088 , H01L21/2855 , H01L29/4966 , H01L29/517 , H01L29/78
摘要： Embodiments described herein provide a semiconductor device and methods and apparatuses of forming the same. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. The gate electrode stack includes a conductive film layer on a gate dielectric layer, a refractory metal nitride film layer on the conductive film layer, a silicon-containing film layer on the refractory metal nitride film layer, and a tungsten film layer on the silicon-containing film layer. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal nitride film layer on the conductive film layer, depositing a silicon-containing film layer on the refractory metal nitride film layer, and depositing a tungsten film layer on the silicon-containing film layer.
摘要翻译： 本文所述的实施例提供了一种半导体器件及其形成方法和装置。 半导体器件包括在源极和漏极区域之间的衬底上具有源极和漏极区域以及栅电极堆叠的衬底。 栅极电极堆叠包括在栅极电介质层上的导电膜层，导电膜层上的难熔金属氮化物膜层，难熔金属氮化物膜层上的含硅膜层，以及硅 - 含有膜层。 在一个实施例中，该方法包括将衬底定位在处理室内，其中衬底包括源极和漏极区域，源极和漏极区域之间的栅极介电层以及栅极电介质层上的导电膜层。 该方法还包括在导电膜层上沉积难熔金属氮化物膜层，在难熔金属氮化物膜层上沉积含硅膜层，并在含硅膜层上沉积钨膜层。
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公开(公告)号：US20100252416A1
公开(公告)日：2010-10-07
申请号：US12723199
申请日：2010-03-12
申请人： Zhendong Liu , Rongjun Wang , Xianmin Tang , Srinivas Gandikota , Tza-Jing Gung , Muhammad M. Rasheed
发明人： Zhendong Liu , Rongjun Wang , Xianmin Tang , Srinivas Gandikota , Tza-Jing Gung , Muhammad M. Rasheed
IPC分类号： C23C14/34
CPC分类号： C23C14/3407 , H01J37/342 , H01J37/3423
摘要： Target assemblies and PVD chambers including target assemblies are disclosed. The target assembly includes a target that has a concave shaped target. When used in a PVD chamber, the concave target provides more radially uniform deposition on a substrate disposed in the sputtering chamber.
摘要翻译： 公开了包括目标组件的目标组件和PVD室。 目标组件包括具有凹形目标的目标。 当在PVD室中使用时，凹目标在设置在溅射室中的基板上提供更径向均匀的沉积。
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公开(公告)号：US09752228B2
公开(公告)日：2017-09-05
申请号：US12723199
申请日：2010-03-12
申请人： Zhendong Liu , Rongjun Wang , Xianmin Tang , Srinivas Gandikota , Tza-Jing Gung , Muhammad M. Rasheed
发明人： Zhendong Liu , Rongjun Wang , Xianmin Tang , Srinivas Gandikota , Tza-Jing Gung , Muhammad M. Rasheed
CPC分类号： C23C14/3407 , H01J37/342 , H01J37/3423
摘要： Target assemblies and PVD chambers including target assemblies are disclosed. The target assembly includes a target that has a concave shaped target. When used in a PVD chamber, the concave target provides more radially uniform deposition on a substrate disposed in the sputtering chamber.
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5.发明申请HIGH PRESSURE RF-DC SPUTTERING AND METHODS TO IMPROVE FILM UNIFORMITY AND STEP-COVERAGE OF THIS PROCESS 审中-公开高压RF-DC溅射和改善膜过程的均匀性和步骤的方法公开(公告)号：US20100252417A1
公开(公告)日：2010-10-07
申请号：US12754473
申请日：2010-04-05
申请人： Adolph Miller Allen , Lara Hawrylchak , Zhigang Xie , Muhammad M. Rasheed , Rongjun Wang , Xianmin Tang , Zhendong Liu , Tza-Jing Gung , Srinivas Gandikota , Mei Chang , Michael S. Cox , Donny Young , Kirankumar Savandaiah , Zhenbin Ge
发明人： Adolph Miller Allen , Lara Hawrylchak , Zhigang Xie , Muhammad M. Rasheed , Rongjun Wang , Xianmin Tang , Zhendong Liu , Tza-Jing Gung , Srinivas Gandikota , Mei Chang , Michael S. Cox , Donny Young , Kirankumar Savandaiah , Zhenbin Ge
IPC分类号： C23C14/34
CPC分类号： C23C14/564 , C23C14/345 , C23C14/3492 , C23C14/35 , C23C14/548 , H01J37/32642 , H01J37/3405 , H01J37/3408 , H01J37/3441 , H01J37/3455
摘要： Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.
摘要翻译： 本发明的实施例通常提供用于执行物理气相沉积（PVD）工艺的处理室和沉积多组分膜的方法。 处理室可以包括：改进的RF馈送配置以减少任何驻波效应; 改进的磁控管设计，以增强RF等离子体均匀性，沉积膜组成和厚度均匀性; 改进的衬底偏置结构以改善工艺控制; 以及改进的工艺组件设计，以改善衬底临界表面附近的RF场均匀性。 该方法包括使用耦合到多组分靶的RF电源在室的处理区域中形成等离子体，相对于多组分靶物平移磁控管，其中磁控管相对于中心点位于第一位置 的多组分靶，同时磁控管正在平移并且形成等离子体，并且在腔室中的基底上沉积多组分膜。
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公开(公告)号：US09087679B2
公开(公告)日：2015-07-21
申请号：US13365876
申请日：2012-02-03
CPC分类号： H01J37/34 , H01J37/32082 , H01J37/3441
摘要： Embodiments of the invention generally relate to a grounding kit for a semiconductor processing chamber, and a semiconductor processing chamber having a grounding kit. More specifically, embodiments described herein relate to a grounding kit which creates an asymmetric grounding path selected to significantly reduce the asymmetries caused by an off center RF power delivery.
摘要翻译： 本发明的实施例一般涉及用于半导体处理室的接地套件和具有接地套件的半导体处理室。 更具体地说，本文描述的实施例涉及一种接地套件，该接地套件产生一个非对称接地路径，该非接地套件被选择以显着地减少由偏心的RF功率输送引起的
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公开(公告)号：US20120211354A1
公开(公告)日：2012-08-23
申请号：US13365876
申请日：2012-02-03
IPC分类号： H01L21/203 , C23C14/06 , C23C14/35 , H01L21/28 , H01L21/31
CPC分类号： H01J37/34 , H01J37/32082 , H01J37/3441
摘要： Embodiments of the invention generally relate to a grounding kit for a semiconductor processing chamber, and a semiconductor processing chamber having a grounding kit. More specifically, embodiments described herein relate to a grounding kit which creates an asymmetric grounding path selected to significantly reduce the asymmetries caused by an off center RF power delivery.
摘要翻译： 本发明的实施例一般涉及用于半导体处理室的接地套件和具有接地套件的半导体处理室。 更具体地说，本文描述的实施例涉及一种接地套件，该接地套件产生一个非对称接地路径，该非接地套件被选择以显着地减少由偏心的RF功率输送引起的
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公开(公告)号：US09222172B2
公开(公告)日：2015-12-29
申请号：US12195127
申请日：2008-08-20
IPC分类号： C23C16/455 , C23C16/44
CPC分类号： C23C16/45591 , C04B35/581 , C04B40/0092 , C23C16/4404 , C23C16/45563 , C23C16/45565 , H01J37/32449 , H01L21/02271 , H01L21/0262 , H01L21/28556
摘要： Methods and apparatus relating to aluminum nitride baffles are provided herein. In some embodiments, a baffle for use in semiconductor process chambers may include a body comprising aluminum nitride and a metal oxide binding agent, wherein a ratio of aluminum nitride to metal oxide on a surface of the body is greater than or equal to the ratio within the body. In some embodiments, the body may have a center stem and an outer annulus coupled to and extending radially outwards from a lower portion of the center stem. In some embodiments, a method of fabricating a baffle may include sintering aluminum, nitrogen, and a metal oxide binding agent to form a body of the baffle, the body having excess metal oxide binding agent disposed on a surface thereof; and removing a bulk of the excess metal oxide binding agent from a surface of the body.
摘要翻译： 本文提供了与氮化铝挡板相关的方法和装置。 在一些实施例中，用于半导体处理腔室的挡板可以包括包括氮化铝和金属氧化物结合剂的主体，其中，主体表面上的氮化铝与金属氧化物的比例大于或等于 身体。 在一些实施例中，主体可以具有中心杆和外环，其与中心杆的下部连接并径向向外延伸。 在一些实施方案中，制造挡板的方法可以包括烧结铝，氮和金属氧化物结合剂以形成挡板的主体，所述主体具有设置在其表面上的过量的金属氧化物结合剂; 以及从身体的表面去除大量的多余的金属氧化物粘合剂。
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公开(公告)号：US07811411B2
公开(公告)日：2010-10-12
申请号：US11200431
申请日：2005-08-09
申请人： Siqing Lu , Qiwei Liang , Irene Chou , Steven H. Kim , Young S. Lee , Ellie Y. Yieh , Muhammad M. Rasheed
发明人： Siqing Lu , Qiwei Liang , Irene Chou , Steven H. Kim , Young S. Lee , Ellie Y. Yieh , Muhammad M. Rasheed
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01J37/32522 , H01J37/321
摘要： An RF coil assembly provides a source to generate a plasma inductively in a process chamber. The RF coil assembly includes an RF coil disposed about a perimeter of the processing chamber and a frame disposed about a perimeter of the processing chamber. The frame is adapted to support the RF coil in position. An interface material is disposed between and in thermal contact with the frame and a sidewall of the processing chamber. The interface material has a thermal conductivity of 4.0 W/mK or greater.
摘要翻译： RF线圈组件提供源以在处理室中感应地产生等离子体。 RF线圈组件包括围绕处理室的周边布置的RF线圈和围绕处理室的周边设置的框架。 框架适于将RF线圈支撑在适当位置。 界面材料设置在框架和处理室的侧壁之间并与之热接触。 界面材料的导热率为4.0W / mK以上。
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公开(公告)号：US08022377B2
公开(公告)日：2011-09-20
申请号：US12107281
申请日：2008-04-22
IPC分类号： G21G5/00
CPC分类号： H01L21/67115 , H01L21/3105 , H01S3/03 , H01S3/034 , H01S3/0385 , H01S3/225 , H05H1/2406 , H05H2001/2431 , H05H2001/245
摘要： An apparatus for An apparatus for generating excimer radiation is provided. The apparatus includes a housing having a housing wall. An electrode is configured within the housing. A tubular body is around the electrode. The tubular body includes an outer wall and an inner wall. At least one inert gas is between the outer wall and the inner wall, wherein the housing wall and the electrode are configured to excite the inert gas to illuminate an excimer light for curing.
摘要翻译： 提供了一种用于产生准分子辐射的装置。 该装置包括具有壳体壁的壳体。 电极配置在外壳内。 管状体在电极周围。 管状体包括外壁和内壁。 至少一个惰性气体位于外壁和内壁之间，其中壳体壁和电极构造成激发惰性气体以照射准分子光以进行固化。
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