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1.发明授权Semiconductor device with gate electrode stack including low resistivity tungsten and method of forming 有权具有包括低电阻率钨的栅电极堆叠的半导体器件和形成方法公开(公告)号：US08558299B2
公开(公告)日：2013-10-15
申请号：US13157164
申请日：2011-06-09
申请人： Yong Cao , Xianmin Tang , Srinivas Gandikota , Wei D. Wang , Zhendong Liu , Kevin Moraes , Muhammad M. Rasheed , Thanh X. Nguyen , Ananthkrishna Jupudi
发明人： Yong Cao , Xianmin Tang , Srinivas Gandikota , Wei D. Wang , Zhendong Liu , Kevin Moraes , Muhammad M. Rasheed , Thanh X. Nguyen , Ananthkrishna Jupudi
IPC分类号： H01L29/788
CPC分类号： H01L21/28079 , C23C14/165 , C23C14/345 , C23C14/35 , H01L21/28088 , H01L21/2855 , H01L29/4966 , H01L29/517 , H01L29/78
摘要： Embodiments described herein provide a semiconductor device and methods and apparatuses of forming the same. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. The gate electrode stack includes a conductive film layer on a gate dielectric layer, a refractory metal nitride film layer on the conductive film layer, a silicon-containing film layer on the refractory metal nitride film layer, and a tungsten film layer on the silicon-containing film layer. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal nitride film layer on the conductive film layer, depositing a silicon-containing film layer on the refractory metal nitride film layer, and depositing a tungsten film layer on the silicon-containing film layer.
摘要翻译： 本文所述的实施例提供了一种半导体器件及其形成方法和装置。 半导体器件包括在源极和漏极区域之间的衬底上具有源极和漏极区域以及栅电极堆叠的衬底。 栅极电极堆叠包括在栅极介电层上的导电膜层，导电膜层上的难熔金属氮化物膜层，难熔金属氮化物膜层上的含硅膜层，以及硅 - 含有膜层。 在一个实施例中，该方法包括将衬底定位在处理室内，其中衬底包括源极和漏极区域，源极和漏极区域之间的栅极介电层以及栅极电介质层上的导电膜层。 该方法还包括在导电膜层上沉积难熔金属氮化物膜层，在难熔金属氮化物膜层上沉积含硅膜层，并在含硅膜层上沉积钨膜层。
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2.发明申请LOW RESISTIVITY TUNGSTEN PVD WITH ENHANCED IONIZATION AND RF POWER COUPLING 有权具有增强离子化和射频功率耦合的低电阻TUNGSTEN PVD公开(公告)号：US20110303960A1
公开(公告)日：2011-12-15
申请号：US13157164
申请日：2011-06-09
申请人： YONG CAO , Xianmin Tang , Srinivas Gandikota , Wei D. Wang , Zhendong Liu , Kevin Moraes , Muhammad M. Rasheed , Thanh X. Nguyen , Ananthkrishna Jupudi
发明人： YONG CAO , Xianmin Tang , Srinivas Gandikota , Wei D. Wang , Zhendong Liu , Kevin Moraes , Muhammad M. Rasheed , Thanh X. Nguyen , Ananthkrishna Jupudi
IPC分类号： H01L29/788 , H01L21/283 , C23C14/34 , H01L21/3205
CPC分类号： H01L21/28079 , C23C14/165 , C23C14/345 , C23C14/35 , H01L21/28088 , H01L21/2855 , H01L29/4966 , H01L29/517 , H01L29/78
摘要： Embodiments described herein provide a semiconductor device and methods and apparatuses of forming the same. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. The gate electrode stack includes a conductive film layer on a gate dielectric layer, a refractory metal nitride film layer on the conductive film layer, a silicon-containing film layer on the refractory metal nitride film layer, and a tungsten film layer on the silicon-containing film layer. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal nitride film layer on the conductive film layer, depositing a silicon-containing film layer on the refractory metal nitride film layer, and depositing a tungsten film layer on the silicon-containing film layer.
摘要翻译： 本文所述的实施例提供了一种半导体器件及其形成方法和装置。 半导体器件包括在源极和漏极区域之间的衬底上具有源极和漏极区域以及栅电极堆叠的衬底。 栅极电极堆叠包括在栅极电介质层上的导电膜层，导电膜层上的难熔金属氮化物膜层，难熔金属氮化物膜层上的含硅膜层，以及硅 - 含有膜层。 在一个实施例中，该方法包括将衬底定位在处理室内，其中衬底包括源极和漏极区域，源极和漏极区域之间的栅极介电层以及栅极电介质层上的导电膜层。 该方法还包括在导电膜层上沉积难熔金属氮化物膜层，在难熔金属氮化物膜层上沉积含硅膜层，并在含硅膜层上沉积钨膜层。
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公开(公告)号：US08580094B2
公开(公告)日：2013-11-12
申请号：US13163817
申请日：2011-06-20
申请人： Rongjun Wang , Sally Lou , Muhammad Rasheed , Jianxin Lei , Xianmin Tang , Srinivas Gandikota , Ryan Hanson , Tza-Jing Gung , Keith A. Miller , Thanh X. Nguyen
发明人： Rongjun Wang , Sally Lou , Muhammad Rasheed , Jianxin Lei , Xianmin Tang , Srinivas Gandikota , Ryan Hanson , Tza-Jing Gung , Keith A. Miller , Thanh X. Nguyen
IPC分类号： C23C14/35
CPC分类号： C23C14/35 , H01J37/3408 , H01J37/345 , H01J37/3461
摘要： Methods and apparatus to improve target life and deposition uniformity in PVD chambers are provided herein. In some embodiments, a magnetron assembly includes a shunt plate having a central axis, the shunt plate rotatable about the central axis, a first open loop magnetic pole arc coupled to the shunt plate at a first radius from the central axis, and a second open loop magnetic pole arc coupled the shunt plate at a first distance from the first open loop magnetic pole arc, wherein at least one of the first radius varies along the first open loop magnetic pole arc or the first distance varies along the second open loop magnetic pole arc. In some embodiments, a first polarity of the first open loop magnetic pole arc opposes a second polarity of the second open loop magnetic pole arc.
摘要翻译： 本文提供了改善PVD室中的目标寿命和沉积均匀性的方法和装置。 在一些实施例中，磁控管组件包括具有中心轴线的分流板，分流板可围绕中心轴线旋转，第一开环磁极电弧在与中心轴线成第一半径处耦合到分流板，第二开路 环形磁极以与第一开环磁极弧成第一距离的方式将分流板电弧耦合，其中第一半径中的至少一个沿第一开环磁极弧变化，或者第一距离沿第二开环磁极变化 弧。 在一些实施例中，第一开环磁极的第一极性与第二开环磁极的第二极性相反。
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公开(公告)号：US09340866B2
公开(公告)日：2016-05-17
申请号：US13435766
申请日：2012-03-30
申请人： Alan Ritchie , Donny Young , Wei W. Wang , Ananthkrishna Jupudi , Thanh X. Nguyen , Kirankumar Savandaiah
发明人： Alan Ritchie , Donny Young , Wei W. Wang , Ananthkrishna Jupudi , Thanh X. Nguyen , Kirankumar Savandaiah
CPC分类号： C23C14/34 , H01J37/32091 , H01J37/321 , H01J37/32623 , H01J37/32651 , H01J37/32706 , H01J37/32715 , H01J37/3405 , H01J37/3411
摘要： Apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate includes a substrate support that may include a dielectric member having a surface to support a substrate thereon; one or more first conductive members disposed below the dielectric member and having a dielectric member facing surface adjacent to the dielectric member; and a second conductive member disposed about and contacting the one or more first conductive members such that RF energy provided to the substrate by an RF source returns to the RF source by traveling radially outward from the substrate support along the dielectric member facing surface of the one or more first conductive members and along a first surface of the second conductive member disposed substantially parallel to a peripheral edge surface of the one or more first conductive members after travelling along the dielectric layer facing surface.
摘要翻译： 本文提供了处理基板的设备。 在一些实施例中，用于处理衬底的装置包括衬底支撑件，其可以包括具有用于在其上支撑衬底的表面的电介质构件; 一个或多个第一导电构件，其布置在所述电介质构件下方并且具有邻近所述电介质构件的电介质构件面向表面; 以及设置在所述一个或多个第一导电构件周围并且接触所述一个或多个第一导电构件的第二导电构件，使得通过RF源提供给所述衬底的RF能量通过沿着所述衬底支撑件的所述电介质构件面向表面径向向外径向向外移动 或更多的第一导电构件，并且沿第一导电构件的第一表面布置成大致平行于一个或多个第一导电构件的沿着电介质层面向表面行进的周边边缘表面。
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公开(公告)号：US09087679B2
公开(公告)日：2015-07-21
申请号：US13365876
申请日：2012-02-03
CPC分类号： H01J37/34 , H01J37/32082 , H01J37/3441
摘要： Embodiments of the invention generally relate to a grounding kit for a semiconductor processing chamber, and a semiconductor processing chamber having a grounding kit. More specifically, embodiments described herein relate to a grounding kit which creates an asymmetric grounding path selected to significantly reduce the asymmetries caused by an off center RF power delivery.
摘要翻译： 本发明的实施例一般涉及用于半导体处理室的接地套件和具有接地套件的半导体处理室。 更具体地说，本文描述的实施例涉及一种接地套件，该接地套件产生一个非对称接地路径，该非接地套件被选择以显着地减少由偏心的RF功率输送引起的
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公开(公告)号：US20120211354A1
公开(公告)日：2012-08-23
申请号：US13365876
申请日：2012-02-03
IPC分类号： H01L21/203 , C23C14/06 , C23C14/35 , H01L21/28 , H01L21/31
CPC分类号： H01J37/34 , H01J37/32082 , H01J37/3441
摘要： Embodiments of the invention generally relate to a grounding kit for a semiconductor processing chamber, and a semiconductor processing chamber having a grounding kit. More specifically, embodiments described herein relate to a grounding kit which creates an asymmetric grounding path selected to significantly reduce the asymmetries caused by an off center RF power delivery.
摘要翻译： 本发明的实施例一般涉及用于半导体处理室的接地套件和具有接地套件的半导体处理室。 更具体地说，本文描述的实施例涉及一种接地套件，该接地套件产生一个非对称接地路径，该非接地套件被选择以显着地减少由偏心的RF功率输送引起的
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公开(公告)号：US5675259A
公开(公告)日：1997-10-07
申请号：US528069
申请日：1995-09-14
申请人： G. Dickey Arndt , Thanh X. Nguyen , James R. Carl
发明人： G. Dickey Arndt , Thanh X. Nguyen , James R. Carl
CPC分类号： G01F23/284 , G01F1/66 , G01F1/74 , G01N33/2823
摘要： Method and apparatus for making measurements on fluids related to their complex permeability are disclosed. A microwave probe is provided for exposure to the fluids. The probe can be non-intrusive or can also be positioned at the location where measurements are to be made. The impedance of the probe is determined, in part, by the complex dielectric constant of the fluids at the probe. A radio frequency signal is transmitted to the probe and the reflected signal is phase and amplitude detected at a rapid rate for the purpose of identifying the fluids. Multiple probes may be selectively positioned to monitor the behavior of the fluids including their flow rate. Fluids may be identified as between two or more different fluids as well as multiple phases of the same fluid based on differences between their complex permittivities.
摘要翻译： 公开了用于对与其复合渗透性相关的流体进行测量的方法和装置。 提供微波探头以暴露于流体。 探头可以是非侵入式的，也可以位于要进行测量的位置。 探针的阻抗部分地由探针上的流体的复介电常数确定。 射频信号被传送到探头，并且为了识别流体的目的，反射信号是快速检测的相位和幅度。 可以选择性地定位多个探针以监测流体的行为，包括其流速。 基于其复数介电常数之间的差异，流体可以被识别为两种或更多种不同流体之间以及相同流体的多个相。
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公开(公告)号：US5596150A
公开(公告)日：1997-01-21
申请号：US400703
申请日：1995-03-08
申请人： G. Dickey Arndt , Thanh X. Nguyen , James R. Carl
发明人： G. Dickey Arndt , Thanh X. Nguyen , James R. Carl
摘要： Method and apparatus for making measurements on fluids are disclosed, including the use of a capacitive probe for measuring the flow volume of a material within a flow stream. The capacitance probe has at least two elongate electrodes and, in a specific embodiment of the invention, has three parallel elongate electrodes with the center electrode being an extension of the center conductor of a co-axial cable. A conductance probe is also provided to provide more accurate flow volume data in response to conductivity of the material within the flow stream. A preferred embodiment of the present invention provides for a gas flow stream through a micro-gravity environment that allows for monitoring a flow volume of a fluid sample, such as a urine sample, that is entrained within the gas flow stream.
摘要翻译： 公开了用于对流体进行测量的方法和装置，包括使用用于测量流动流中的材料的流量的电容式探针。 电容探针具有至少两个细长电极，并且在本发明的具体实施例中，具有三个平行的细长电极，其中心电极是同轴电缆的中心导体的延伸。 还提供电导探针以响应于流动流内的材料的导电性提供更精确的流量数据。 本发明的优选实施例提供了通过微重力环境的气体流动流，其允许监测被夹带在气体流动流内的流体样品（例如尿样）的流量。
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公开(公告)号：US20190105097A1
公开(公告)日：2019-04-11
申请号：US15730358
申请日：2017-10-11
申请人： Thanh X. Nguyen , Tam Luu
发明人： Thanh X. Nguyen , Tam Luu
摘要： An apparatus for removing a tattoo includes a control unit having one or more power sources; a head unit coupled to the control unit, wherein the head unit includes a body and a plurality of needles protruding from the body, wherein the plurality of needles includes at least one supply needle and at least one return needle; and a flexible tube coupling the head unit to the control unit, wherein the one or more power sources are electrically coupled to the plurality of needles through the flexible tube, wherein the control unit is configured to deliver power to the at least one supply needle such that power flows from the at least one supply needle to the at least one return needle during use.
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