公开(公告)号：US20100243620A1

公开(公告)日：2010-09-30

申请号：US12732583

申请日：2010-03-26

申请人： Jun Yamawaku ,  Chishio Koshimizu

发明人： Jun Yamawaku ,  Chishio Koshimizu

IPC分类号： B23K10/00

CPC分类号： H01J37/32642 ,  H01J37/32623 ,  H01J2237/2001

摘要： A plasma processing apparatus performs plasma processing on a processing target in a processing chamber. The apparatus includes: an object to be heated provided near a periphery of a mounting table disposed in the processing chamber; and a heating electrode disposed adjacent to the periphery of the mounting table, for heating the object to be heated. A first coil having a first path and a second coil having a second path are wired close to each other in the heating electrode along the periphery of the mounting table.

摘要翻译： 等离子体处理装置对处理室中的处理对象进行等离子体处理。 该装置包括：设置在处理室内的安装台的周边附近的被加热物; 以及与所述安装台的周边相邻设置的加热电极，用于加热待加热物体。 具有第一路径的第一线圈和具有第二路径的第二线圈沿着安装台的周边在加热电极中彼此靠近布线。

公开(公告)号：US09349618B2

公开(公告)日：2016-05-24

申请号：US13344267

申请日：2012-01-05

申请人： Jun Yamawaku ,  Chishio Koshimizu

发明人： Jun Yamawaku ,  Chishio Koshimizu

IPC分类号： H01L21/3065 ,  H01L21/67 ,  H01J37/32 ,  H01L21/687

CPC分类号： H01L21/67069 ,  H01J37/32477 ,  H01J37/32559 ,  H01J37/32642 ,  H01L21/68735

摘要： A substrate processing apparatus capable of removing deposits attached on a component of a lower temperature in a gap between two components, temperatures of which are greatly different from each other, without degrading a working ratio of the substrate processing apparatus. In the substrate processing apparatus, a chamber receives a wafer, a focus ring surrounds the wafer disposed in the chamber, a side surface protective member transmits a laser beam, a laser beam irradiating apparatus irradiates the laser beam to the side surface protective member, an inner focus ring of the focus ring is disposed adjacent to the wafer and is cooled down and an outer focus ring surrounds the inner focus ring and is not cooled down in a focus ring, and a facing surface of the side surface protective member faces a gap between the inner focus ring and the outer focus ring.

摘要翻译： 一种基板处理装置，其能够在不降低基板处理装置的加工率的情况下，除去附着在两个部件之间的间隙中的两个部件之间的间隙附近的沉积物，温度彼此大不相同。 在基板处理装置中，室接收晶片，聚焦环围绕设置在室中的晶片，侧面保护构件透射激光束，激光束照射装置将激光束照射到侧面保护构件， 聚焦环的内聚焦环与晶片相邻地设置并被冷却，并且外聚焦环围绕内聚焦环，并且在聚焦环中不被冷却，并且侧表面保护构件的面对表面 在内聚焦环和外聚焦环之间。

公开(公告)号：US08825434B2

公开(公告)日：2014-09-02

申请号：US13248538

申请日：2011-09-29

申请人： Chishio Koshimizu ,  Jun Yamawaku ,  Tatsuo Matsudo

发明人： Chishio Koshimizu ,  Jun Yamawaku ,  Tatsuo Matsudo

IPC分类号： G01K11/00 ,  G01K11/12 ,  G01B11/06 ,  G01B9/02

CPC分类号： G01K11/125 ,  G01B9/02021 ,  G01B9/02025 ,  G01B9/0209 ,  G01B11/0675

摘要： A temperature measuring method includes: transmitting a light to a measurement point of an object to be measured, the object being a substrate on which a thin film is formed; measuring a first interference wave caused by a reflected light from a surface of the substrate, and a second interference wave caused by reflected lights from an interface between the substrate and the thin film and from a rear surface of the thin film; calculating an optical path length from the first interference wave to the second interference wave; calculating a film thickness of the thin film; calculating an optical path difference between an optical path length of the substrate and the calculated optical path length; compensating for the optical path length from the first interference wave to the second interference wave; and calculating a temperature of the object at the measurement point.

摘要翻译： 温度测量方法包括：将光传输到待测物体的测量点，所述物体是其上形成有薄膜的基板; 测量由来自基板的表面的反射光引起的第一干涉波，以及由来自基板和薄膜之间的界面和薄膜的后表面的反射光引起的第二干涉波; 计算从第一干涉波到第二干涉波的光路长度; 计算薄膜的膜厚度; 计算基板的光路长度与算出的光程长度之间的光程差; 补偿从第一干涉波到第二干涉波的光路长度; 并计算测量点处的物体的温度。

公开(公告)号：US20110211817A1

公开(公告)日：2011-09-01

申请号：US13034858

申请日：2011-02-25

申请人： Jun Yamawaku ,  Chishio Koshimizu ,  Tatsuo Matsudo

发明人： Jun Yamawaku ,  Chishio Koshimizu ,  Tatsuo Matsudo

IPC分类号： F27D11/12 ,  H01L21/00

CPC分类号： H01L21/67115 ,  F27B17/0025 ,  F27D11/12

摘要： There is provided a method for heating a part within a processing chamber of a semiconductor manufacturing apparatus having a substrate in the processing chamber and performing a process on the substrate. The heating method includes generating heating lights which is generated by a heating light source provided outside the processing chamber and has a wavelength band capable of passing through a first part in the processing chamber and being absorbed into a second part in the processing chamber made of a material different from that of the first part, and heating the second part in the processing chamber by passing the heating lights through the first part in the processing chamber and irradiating the heating lights to the second part in the processing chamber.

摘要翻译： 提供了一种用于加热在处理室中具有基板的半导体制造装置的处理室内的部件并在基板上进行处理的方法。 该加热方法包括产生由设置在处理室外部的加热光源产生的加热灯，并且具有能够通过处理室中的第一部分并被吸收到处理室中的第二部分中的波长带 与第一部分不同的材料，并且通过使加热灯通过处理室中的第一部分并且将加热灯照射到处理室中的第二部分来加热处理室中的第二部分。

公开(公告)号：US09019505B2

公开(公告)日：2015-04-28

申请号：US13240274

申请日：2011-09-22

申请人： Jun Yamawaku ,  Chishio Koshimizu ,  Tatsuo Matsudo ,  Kenji Nagai

发明人： Jun Yamawaku ,  Chishio Koshimizu ,  Tatsuo Matsudo ,  Kenji Nagai

IPC分类号： G01B9/02 ,  H01L21/67 ,  G01J5/58 ,  G01J9/02

CPC分类号： H01L21/67248 ,  G01J9/02 ,  G01J2005/583

摘要： The temperature control system includes: a susceptor which allows an object to be processed to be held on a top surface thereof and includes a flow path, through which a temperature adjusting medium flows, formed therein; a temperature measuring unit which measures a temperature of the object to be processed held on the top surface of the susceptor; a first temperature adjusting unit which adjusts a temperature of the temperature adjusting medium flowing through the flow path; and a second temperature adjusting unit which is disposed between the susceptor and the first temperature adjusting unit, and adjusts a temperature of the temperature adjusting medium based on a result of the measurement of the temperature measuring unit.

摘要翻译： 温度控制系统包括：一个允许被处理物体被保持在其顶面上的基座，并且包括在其中形成温度调节介质流过的流路; 温度测量单元，其测量保持在所述基座的顶表面上的被处理物体的温度; 第一温度调节单元，其调节流过所述流路的温度调节介质的温度; 以及第二温度调节单元，其设置在所述基座和所述第一温度调节单元之间，并且基于所述温度测量单元的测量结果来调节所述温度调节介质的温度。

公开(公告)号：US09236226B2

公开(公告)日：2016-01-12

申请号：US13428512

申请日：2012-03-23

申请人： Jun Yamawaku ,  Takafumi Kimura ,  Chishio Koshimizu

发明人： Jun Yamawaku ,  Takafumi Kimura ,  Chishio Koshimizu

IPC分类号： H01L21/00 ,  H01J37/32

CPC分类号： H01J37/32091 ,  H01J37/32669

摘要： In the plasma processing apparatus 10, a processing space S is formed between a susceptor 12 and an upper electrode 13 facing the susceptor 12. The plasma processing apparatus 10 includes a magnetic field generating unit provided at a side of the upper electrode 13 opposite to the processing space S. The magnetic field generating unit includes a magnetic force line generating unit 27 having a pair of annular magnet rows 27a and 27b. The annular magnet rows 27a and 27b are provided at the side of the upper electrode 13 opposite to the processing space S and arranged concentrically when viewed from the top. In the magnetic force line generating unit 27, an angle θ1 formed by axial lines of magnets of the annular magnet rows 27a and 27b is set to be in a range of about 0°

摘要翻译： 在等离子体处理装置10中，在基座12和与基座12相对的上部电极13之间形成有处理空间S.等离子体处理装置10包括设在上侧电极13的与 处理空间S.磁场产生单元包括具有一对环形磁体排27a和27b的磁力线生成单元27。 环形磁体排27a和27b设置在上部电极13的与处理空间S相对的一侧，并且从顶部观察时同心地布置。 在磁力线产生单元27中，由环状磁体排27a和27b的磁体的轴线形成的角度θ1设定在约0°<1at; 1＆amp; nlE; 180°的范围内。

公开(公告)号：US20120241092A1

公开(公告)日：2012-09-27

申请号：US13428512

申请日：2012-03-23

申请人： Jun Yamawaku ,  Takafumi Kimura ,  Chishio Koshimizu

发明人： Jun Yamawaku ,  Takafumi Kimura ,  Chishio Koshimizu

IPC分类号： H05H1/24 ,  B44C1/22

CPC分类号： H01J37/32091 ,  H01J37/32669

摘要： In the plasma processing apparatus 10, a processing space S is formed between a susceptor 12 and an upper electrode 13 facing the susceptor 12. The plasma processing apparatus 10 includes a magnetic field generating unit provided at a side of the upper electrode 13 opposite to the processing space S. The magnetic field generating unit includes a magnetic force line generating unit 27 having a pair of annular magnet rows 27a and 27b. The annular magnet rows 27a and 27b are provided at the side of the upper electrode 13 opposite to the processing space S and arranged concentrically when viewed from the top. In the magnetic force line generating unit 27, an angle θ1 formed by axial lines of magnets of the annular magnet rows 27a and 27b is set to be in a range of about 0°

摘要翻译： 在等离子体处理装置10中，在基座12和与基座12相对的上部电极13之间形成有处理空间S.等离子体处理装置10包括设在上侧电极13的与 处理空间S.磁场产生单元包括具有一对环形磁体排27a和27b的磁力线生成单元27。 环形磁体排27a和27b设置在上部电极13的与处理空间S相对的一侧，并且从顶部观察时同心地布置。 在磁力线产生单元27中，由环状磁体排27a和27b的磁体的轴线形成的角度θ1设定在约0°<1at; 1＆amp; nlE; 180°的范围内。

公开(公告)号：US08764288B2

公开(公告)日：2014-07-01

申请号：US13476264

申请日：2012-05-21

申请人： Jun Abe ,  Tatsuo Matsudo ,  Chishio Koshimizu

发明人： Jun Abe ,  Tatsuo Matsudo ,  Chishio Koshimizu

IPC分类号： G01J5/00 ,  G01B9/02

CPC分类号： G01J5/02 ,  G01K1/026 ,  G01K11/125

摘要： A temperature measuring apparatus includes a light source, a first splitter, a second splitter, a reference beam reflector, an optical path length adjuster, a reference beam transmitting member, a first to an nth measuring beam transmitting member and a photodetector. The temperature measuring apparatus further includes an attenuator that attenuates the reference beam reflected from the reference beam reflector to thereby make an intensity thereof closer to an intensity of the measurement beam reflected from the temperature measurement object.

摘要翻译： 温度测量装置包括光源，第一分离器，第二分离器，参考光束反射器，光程长度调节器，参考光束传输部件，第一至第N测量光束传输部件和光电检测器。 温度测量装置还包括衰减器，衰减从参考光束反射器反射的参考光束，从而使其强度更接近于从温度测量对象反射的测量光束的强度。

公开(公告)号：US08741095B2

公开(公告)日：2014-06-03

申请号：US12415466

申请日：2009-03-31

申请人： Chishio Koshimizu

发明人： Chishio Koshimizu

IPC分类号： C23C16/509 ,  H01L21/3065 ,  C23F1/00

CPC分类号： H01J37/32165 ,  H01J37/32091

摘要： A plasma processing apparatus includes a vacuum evacuable processing chamber; a first electrode for supporting a substrate to be processed in the processing chamber; a processing gas supply unit for supplying a processing gas into a processing space; a plasma excitation unit for generating a plasma by exciting the processing gas in the processing chamber; a first radio frequency power supply unit for supplying a first radio frequency power to the first electrode to attract ions in the plasma to the substrate; and a first radio frequency power amplitude modulation unit for modulating an amplitude of the first radio frequency power at a predetermined interval. The plasma processing apparatus further includes a first radio frequency power frequency modulation unit for modulating a frequency of the first radio frequency power in substantially synchronously with the amplitude modulation of the first radio frequency power.

摘要翻译： 等离子体处理装置包括真空排气处理室; 用于在所述处理室中支撑待处理的基板的第一电极; 处理气体供应单元，用于将处理气体供应到处理空间中; 等离子体激发单元，用于通过激励处理室中的处理气体来产生等离子体; 第一射频电源单元，用于向第一电极提供第一射频功率以将等离子体中的离子吸引到衬底; 以及用于以预定间隔调制第一射频功率的幅度的第一射频功率幅度调制单元。 等离子体处理装置还包括第一射频功率频率调制单元，用于与第一射频功率的幅度调制基本同步地调制第一射频功率的频率。

公开(公告)号：US08513563B2

公开(公告)日：2013-08-20

申请号：US13403588

申请日：2012-02-23

申请人： Naoki Matsumoto ,  Chishio Koshimizu ,  Yoshinobu Hayakawa ,  Hidetoshi Hanaoka ,  Manabu Iwata ,  Satoshi Tanaka

发明人： Naoki Matsumoto ,  Chishio Koshimizu ,  Yoshinobu Hayakawa ,  Hidetoshi Hanaoka ,  Manabu Iwata ,  Satoshi Tanaka

IPC分类号： B23K10/00

CPC分类号： H01J37/32165 ,  H01J37/32082

摘要： In a plasma processing apparatus, a first electrode is attached to a grounded evacuable processing chamber via an insulating material or a space and a second electrode disposed in parallel with the first electrode spaced apart therefrom in the processing chamber, the second electrode supporting a target substrate to face the first electrode. A first radio frequency power supply unit applies a first radio frequency power of a first frequency to the second electrode, and a second radio frequency power supply unit applies a second radio frequency power of a second frequency lower than the first frequency to the second electrode. Further, a processing gas supply unit supplies a processing gas to a processing space formed by the first and the second electrode and a sidewall of the processing chamber. Moreover, an inductor electrically is connected between the first electrode and a ground potential.

摘要翻译： 在等离子体处理装置中，第一电极经由绝缘材料或空间连接到接地的可抽出处理室，并且在处理室中与与其间隔开的第一电极平行设置的第二电极，第二电极支撑目标衬底 面对第一个电极。 第一射频电源单元向第二电极施加第一频率的第一射频功率，第二射频电源单元将第二频率低于第一频率的第二射频功率施加到第二电极。 此外，处理气体供给单元将处理气体供给到由第一和第二电极以及处理室的侧壁形成的处理空间。 此外，电感器电连接在第一电极和地电位之间。