公开(公告)号：US07262541B2

公开(公告)日：2007-08-28

申请号：US10791787

申请日：2004-03-04

申请人： Mi Xiaoyu ,  Satoshi Ueda ,  Hisao Okuda ,  Osamu Tsuboi ,  Hiromitsu Soneda ,  Norinao Kouma ,  Ippei Sawaki ,  Yoshitaka Nakamura

发明人： Mi Xiaoyu ,  Satoshi Ueda ,  Hisao Okuda ,  Osamu Tsuboi ,  Hiromitsu Soneda ,  Norinao Kouma ,  Ippei Sawaki ,  Yoshitaka Nakamura

IPC分类号： H02N1/00 ,  G02B26/10

CPC分类号： G02B26/0841

摘要： A micro-oscillation element includes an oscillation section and a frame. The oscillation section is provided with a mirror surface and is connected to the frame via trapezoidal first and second springs. The oscillation section is located between the first spring and the second spring. Each of the first spring and the second spring is deformable along with the oscillation of the oscillation section.

摘要翻译： 微振荡元件包括振荡部和框架。 振荡部分设有镜面，通过梯形的第一和第二弹簧与框架相连。 振荡部分位于第一弹簧和第二弹簧之间。 第一弹簧和第二弹簧中的每一个与振荡部的振动一起是可变形的。

公开(公告)号：US20060237619A1

公开(公告)日：2006-10-26

申请号：US11402797

申请日：2006-04-13

申请人： Yoshitaka Nakamura

发明人： Yoshitaka Nakamura

IPC分类号： F16M13/00

CPC分类号： B60N2/0232 ,  B60N2/067

摘要： A power seat slide apparatus for a vehicle includes a first rail adapted to be fixed to a vehicle floor, a second rail adapted to be fixed to a vehicle seat and slidably supported relative to the first rail, a screw shaft screwed to a nut member which is fixed to the first rail, the screw shaft including an end portion and a stepped portion, a washer engaged with the stepped portion of the screw shaft, a gear member to which the end portion of the screw shaft is inserted, a fastening member provided at the end portion of the screw shaft, and a gear box fixed to an end of the second rail. The gear box includes a support bracket, a gear housing, and a plate. The stepped portion of the screw shaft is arranged in such a manner that the washer is connected thereto in the gear housing.

摘要翻译： 一种用于车辆的动力座椅滑动装置，包括适于固定在车辆地板上的第一轨道，适于固定在车辆座椅上并相对于第一轨道可滑动地支撑的第二轨道，螺纹连接到螺母构件的螺杆轴， 固定到第一轨道，螺杆轴包括端部和阶梯部分，与螺杆轴的阶梯部分接合的垫圈，螺杆轴的端部插入的齿轮构件，设置有紧固构件的紧固构件 在螺杆轴的端部处，以及固定到第二轨道的端部的齿轮箱。 齿轮箱包括支撑托架，齿轮箱和板。 螺杆轴的台阶部分以这样一种方式设置，即垫圈在齿轮箱中与其连接。

公开(公告)号：US06969629B2

公开(公告)日：2005-11-29

申请号：US10791903

申请日：2004-03-04

申请人： Norinao Kouma ,  Osamu Tsuboi ,  Hisao Okuda ,  Hiromitsu Soneda ,  Mi Xiaoyu ,  Satoshi Ueda ,  Ippei Sawaki ,  Yoshitaka Nakamura

发明人： Norinao Kouma ,  Osamu Tsuboi ,  Hisao Okuda ,  Hiromitsu Soneda ,  Mi Xiaoyu ,  Satoshi Ueda ,  Ippei Sawaki ,  Yoshitaka Nakamura

IPC分类号： B81C1/00 ,  B81B3/00 ,  H01L21/00 ,  H01L29/84

CPC分类号： B81C1/00626 ,  B81B2201/0235 ,  B81B2201/042 ,  B81B2203/0136 ,  B81B2203/04

摘要： A method for manufacturing a micro-structural unit is provided. By the method, micro-machining is performed on a material substrate including first through third conductive layers and two insulating layers, one of which is interposed between the first and the second conductive layers, and the other between the second and the third conductive layers. The method includes several etching steps performed on the layers of the material substrate that are different in thickness.

公开(公告)号：US20050217373A1

公开(公告)日：2005-10-06

申请号：US11091456

申请日：2005-03-29

申请人： Hiroshi Ishikawa ,  Yoshitaka Nakamura ,  Hiroshi Tokunaga ,  Kenji Nagata

发明人： Hiroshi Ishikawa ,  Yoshitaka Nakamura ,  Hiroshi Tokunaga ,  Kenji Nagata

IPC分类号： G01C19/56 ,  G01P1/02 ,  G01P15/08 ,  G01P15/12 ,  G01P15/125 ,  H01L29/84 ,  H01H35/02

CPC分类号： G01P15/123 ,  B81B3/0051 ,  B81B2201/0235 ,  G01C19/56 ,  G01P1/023 ,  G01P15/0802 ,  G01P15/18 ,  G01P2015/0842

摘要： An inertial sensor includes a sensing portion having a weight supported by beams, the weight being a movable portion, and a weight stopper that limits a movable range of the weight, the weight stopper being arranged in a vicinity of the weight with a given clearance and being a part of a substrate for the inertial sensor processed with MEMS techniques.

摘要翻译： 惯性传感器包括具有由梁支撑的重物的感测部分，该重物是可移动部分，以及限制重物的可移动范围的重量限制器，该重物限制器布置在具有给定间隙的重物附近， 作为用MEMS技术处理的惯性传感器的基板的一部分。

公开(公告)号：US20050024811A1

公开(公告)日：2005-02-03

申请号：US10923002

申请日：2004-08-23

申请人： Hiroshi Moriya ,  Tomio Iwasaki ,  Hiroyuki Ohta ,  Shinpei Iijima ,  Isamu Asano ,  Yuzuru Ohji ,  Yoshitaka Nakamura

发明人： Hiroshi Moriya ,  Tomio Iwasaki ,  Hiroyuki Ohta ,  Shinpei Iijima ,  Isamu Asano ,  Yuzuru Ohji ,  Yoshitaka Nakamura

IPC分类号： H01L27/10 ,  H01L21/02 ,  H01L21/8242 ,  H01L27/108 ,  H01G4/008

CPC分类号： H01L28/60 ,  H01L27/10814 ,  H01L28/55

摘要： A semiconductor device equipped with information storage capacitor comprising a first capacitor electrode, an oxide film, a second capacitor electrode and insulating films containing silicon as a main constituting element, wherein at least one of first and second capacitor electrodes contains as a main constituting element at least one element selected from rhodium, ruthenium, iridium, osmium and platinum, and as an adding element at least one element selected from palladium, nickel, cobalt and titanium, is excellent in adhesiveness between the capacitor electrodes and the insulating films.

摘要翻译： 一种配备有信息存储电容器的半导体器件，包括第一电容器电极，氧化物膜，第二电容器电极和以硅为主要构成元素的绝缘膜，其中，第一和第二电容器电极中的至少一个包含作为主要构成元素 选自铑，钌，铱，锇和铂中的至少一种元素，并且作为添加元素，选自钯，镍，钴和钛中的至少一种元素，电容器电极和绝缘膜之间的粘附性优异。

公开(公告)号：US06753347B2

公开(公告)日：2004-06-22

申请号：US10272133

申请日：2002-10-16

申请人： Naoyuki Kishi ,  Yoshitaka Nakamura ,  Narumi Abe ,  Toyonori Takebayashi

发明人： Naoyuki Kishi ,  Yoshitaka Nakamura ,  Narumi Abe ,  Toyonori Takebayashi

IPC分类号： A61K3121

CPC分类号： C07C271/28 ,  C07D277/34 ,  C07D417/12 ,  Y02P20/55

摘要： This invention provides a process for the preparation of a benzimidazole derivative (I) or a pharmaceutically acceptable salt thereof, wherein R1 is C1-C6 alkyl, C1-C6 alkoxyl, etc., R2 is C1-C6 alkyl, and R3 is hydrogen or a protecting group, which exhibits excellent hyopoglycemic action, said process comprising condensation of an amine derivative (III) with a carboxylic acid derivatives (II) to afford a compound (IV), followed by cyclization of compound (IV) in the presence of an acid.

摘要翻译： 本发明提供了制备苯并咪唑衍生物（I）或其药学上可接受的盐的方法，其中R 1是C 1 -C 6烷基，C 1 -C 6烷氧基等，R 2是C 1 -C 6烷基 ，并且R 3是氢或保护基，其表现出优异的血压作用，所述方法包括将胺衍生物（III）与羧酸衍生物（II）缩合，得到化合物（IV），然后环化 化合物（Ⅳ）在酸存在下反应。

公开(公告)号：US06686619B2

公开(公告)日：2004-02-03

申请号：US10137426

申请日：2002-05-03

申请人： Yoshitaka Nakamura ,  Hideo Aoki ,  Yoshikazu Ohira ,  Tadashi Umezawa ,  Satoru Yamada ,  Keizou Kawakita ,  Isamu Asano ,  Naoki Fukuda ,  Tsuyoshi Tamaru ,  Hidekazu Goto ,  Nobuyoshi Kobayashi

发明人： Yoshitaka Nakamura ,  Hideo Aoki ,  Yoshikazu Ohira ,  Tadashi Umezawa ,  Satoru Yamada ,  Keizou Kawakita ,  Isamu Asano ,  Naoki Fukuda ,  Tsuyoshi Tamaru ,  Hidekazu Goto ,  Nobuyoshi Kobayashi

IPC分类号： H01L27108

CPC分类号： H01L27/10894 ,  H01L21/28518 ,  H01L21/32053 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76889 ,  H01L21/76897 ,  H01L27/10885 ,  H01L28/91 ,  Y10S257/908

摘要： A semiconductor integrated circuit device and a manufacturing method therefor provide advantages that undulations are prevented from being produced in polycrystal silicon plugs in bit line contact holes and that the undesired phenomenon of transversally etching silicide film at contacts of the bit lines and the polycrystal silicon plugs is avoided. The bit lines formed when forming a first wiring layer are made of a laminate film having a titanium film, a titanium nitride film and a tungsten film, and a titanium silicide film containing nitrogen or oxygen is formed in contact areas of the bit lines and plugs. A titanium silicide film containing nitrogen or oxygen is also formed in contact areas of the first wiring layer and semiconductor substrate. The titanium silicide film may be replaced by silicide film containing nitrogen or oxygen, cobalt silicide film containing nitrogen or oxygen or cobalt silicide film.

摘要翻译： 一种半导体集成电路器件及其制造方法，提供了防止在位线接触孔中的多晶硅插塞中产生起伏的优点，并且在位线和多晶硅插头的触点处横向蚀刻硅化物膜的不期望的现象是 避免。 在形成第一布线层时形成的位线由具有钛膜，氮化钛膜和钨膜的层叠膜制成，并且在位线和插塞的接触区域中形成含有氮或氧的硅化钛膜 。 含有氮或氧的硅化钛膜也形成在第一布线层和半导体衬底的接触区域中。 硅化钛膜可以由含有氮或氧的硅化物膜，含有氮的硅化钴膜或氧化硅或硅化钴膜代替。

公开(公告)号：US06555429B2

公开(公告)日：2003-04-29

申请号：US09810627

申请日：2001-03-19

申请人： Yuichi Matsui ,  Masahiko Hiratani ,  Yasuhiro Shimamoto ,  Yoshitaka Nakamura ,  Toshihide Nabatame

发明人： Yuichi Matsui ,  Masahiko Hiratani ,  Yasuhiro Shimamoto ,  Yoshitaka Nakamura ,  Toshihide Nabatame

IPC分类号： H01L218242

CPC分类号： H01L28/60 ,  H01L21/28562 ,  H01L27/10814

摘要： In a semiconductor device including a plurality of memory cells, a deposition preventing film is formed on an interlayer insulating film in which a plurality of holes are formed, or a seed film is selectively formed on the interlayer insulating film and on an inner surface and a bottom surface of the holes. A film of Ru, Ir or Pt is deposited by chemical vapor deposition on the deposition preventing film, or on the interlayer insulating film by utilizing the seed film, under the condition where underlayer dependency occurs. In consequence, lower electrodes are formed in accordance with a pattern of the deposition preventing film or the seed film. A dielectric film is formed on the lower electrodes and the deposition preventing film at a predetermined temperature. The material of the lower electrodes does not lose conduction even when exposed to the predetermined temperature employed for forming the dielectric film. Upper electrodes are further formed on the dielectric film. The upper and lower electrodes and an oxide dielectric film together constitute capacitors of the memory cells.

公开(公告)号：US06483143B2

公开(公告)日：2002-11-19

申请号：US09810401

申请日：2001-03-19

申请人： Yuichi Matsui ,  Masahiko Hiratani ,  Yasuhiro Shimamoto ,  Yoshitaka Nakamura ,  Toshihide Nabatame

发明人： Yuichi Matsui ,  Masahiko Hiratani ,  Yasuhiro Shimamoto ,  Yoshitaka Nakamura ,  Toshihide Nabatame

IPC分类号： H01L27108

CPC分类号： H01L28/60 ,  H01L21/28562 ,  H01L27/10814

摘要： In a semiconductor device including a plurality of memory cells, a deposition preventing film is formed on an interlayer insulating film in which a plurality of holes are formed, or a seed film is selectively formed on the interlayer insulating film and on an inner surface and a bottom surface of the holes. A film of Ru, Ir or Pt is deposited by chemical vapor deposition on the deposition preventing film, or on the interlayer insulating film by utilizing the seed film, under the condition where underlayer dependency occurs. In consequence, lower electrodes are formed in accordance with a pattern of the deposition preventing film or the seed film. A dielectric film is formed on the lower electrodes and the deposition preventing film at a predetermined temperature. The material of the lower electrodes does not lose conduction even when exposed to the predetermined temperature employed for forming the dielectric film. Upper electrodes are further formed on the dielectric film. The upper and lower electrodes and an oxide dielectric film together constitute capacitors of the memory cells.

摘要翻译： 在包括多个存储单元的半导体器件中，在形成有多个孔的层间绝缘膜上形成防沉积膜，或者在层间绝缘膜和内表面上选择性地形成晶种膜， 孔的底面。 在发生底层依赖性的条件下，通过化学气相沉积在沉积防止膜上或通过利用种子膜在层间绝缘膜上沉积Ru，Ir或Pt的膜。 因此，根据防沉积膜或种子膜的图案形成下部电极。 在预定温度下在下电极和防沉积膜上形成电介质膜。 即使暴露在用于形成电介质膜的预定温度下，下电极的材料也不会导通。 上电极进一步形成在电介质膜上。 上下电极和氧化物介质膜一起构成存储单元的电容器。

公开(公告)号：US06479899B1

公开(公告)日：2002-11-12

申请号：US09051978

申请日：1998-04-24

申请人： Takuya Fukuda ,  Nobuyoshi Kobayashi ,  Yoshitaka Nakamura ,  Masayoshi Saito ,  Shinichi Fukada ,  Yoshifumi Kawamoto

发明人： Takuya Fukuda ,  Nobuyoshi Kobayashi ,  Yoshitaka Nakamura ,  Masayoshi Saito ,  Shinichi Fukada ,  Yoshifumi Kawamoto

IPC分类号： H01L2348

CPC分类号： H01L27/10808 ,  H01L27/108

摘要： The new structure of a memory cell which enables avoiding the problem of a step without increasing the number of processes, the structure of a semiconductor integrated circuit in which a common part of the same substrate in a manufacturing process is increased and the structure of the semiconductor integrated circuit which allows measures for environment obstacles without increasing the number of processes are disclosed. Memory cell structure in which a capacitor is formed in the uppermost layer of plural metal wiring layers by connecting the storage node of the capacitor to a diffusion layer via plugs and pads is adopted. It is desirable that a dielectric film formed in a metal wiring layer under the uppermost layer and a supplementary capacitor composed of a storage node and a plate electrode are connected to the capacitor. It is also desirable that the plate electrode of the capacitor covers the chip.