公开(公告)号：US20090085132A1

公开(公告)日：2009-04-02

申请号：US11863130

申请日：2007-09-27

Applicant: Ya Chen Kao ,  Chun-Jung Lin ,  Yu-Jen Wang ,  Hsu-Chen Cheng ,  Feng-Jia Shiu ,  Yung-Tao Lin

Inventor： Ya Chen Kao ,  Chun-Jung Lin ,  Yu-Jen Wang ,  Hsu-Chen Cheng ,  Feng-Jia Shiu ,  Yung-Tao Lin

IPC: H01L29/82

CPC classification number: H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/16 ,  H01L43/08

Abstract: A MRAM cell structure includes a bottom electrode; a magnetic tunnel junction unit disposed on the bottom electrode; a top electrode disposed on the magnetic tunnel junction unit; and a blocking layer disposed on the top electrode, wherein the blocking layer is wider than the magnetic tunnel junction unit for preventing against formation of a short circuit between a contact and the magnetic tunnel junction unit.

Abstract translation: MRAM单元结构包括底电极; 设置在所述底部电极上的磁性隧道结单元; 设置在磁隧道结单元上的顶电极; 以及设置在所述顶部电极上的阻挡层，其中所述阻挡层比所述磁性隧道结单元宽，以防止在触点和所述磁性隧道结单元之间形成短路。

公开(公告)号：US20090065883A1

公开(公告)日：2009-03-12

申请号：US11854478

申请日：2007-09-12

Applicant: Yu-Jen Wang ,  Young-Shying Chen ,  Ya-Chen Kao ,  Chun-Jung Lin

Inventor： Yu-Jen Wang ,  Young-Shying Chen ,  Ya-Chen Kao ,  Chun-Jung Lin

IPC: H01L29/82 ,  H01L21/00

CPC classification number: B82Y10/00 ,  G11C11/15 ,  H01L27/228

Abstract: A method for fabricating a magnetoresistive random access memory (MRAM) device having a plurality of memory cells includes: forming a fixed magnetic layer having magnetic moments fixed in a predetermined direction; forming a tunnel layer over the fixed magnetic layer; forming a free magnetic layer, having magnetic moments aligned in a direction that is adjustable by applying an electromagnetic field, over the tunnel layer; forming a hard mask on the free magnetic layer partially covering the free magnetic layer; and unmagnetizing portions of the free magnetic layer uncovered by the hard mask for defining one or more magnetic tunnel junction (MTJ) units.

Abstract translation: 一种制造具有多个存储单元的磁阻随机存取存储器（MRAM）器件的方法包括：形成具有固定在预定方向上的磁矩的固定磁性层; 在固定磁性层上形成隧道层; 在隧道层上形成具有通过施加电磁场可调整方向的磁矩的自由磁性层; 在部分覆盖自由磁性层的自由磁性层上形成硬掩模; 以及由硬掩模未覆盖的自由磁性层的非磁化部分，用于限定一个或多个磁性隧道结（MTJ）单元。

公开(公告)号：USD583046S1

公开(公告)日：2008-12-16

申请号：US29303228

申请日：2008-02-04

Applicant: Ming-Te Ku ,  Hsin-Kun Ho ,  Mao-Lung Chen ,  Ming-Chieh Tsai ,  Yu-Jen Wang ,  Yi-Cheng Chen

Designer： Ming-Te Ku ,  Hsin-Kun Ho ,  Mao-Lung Chen ,  Ming-Chieh Tsai ,  Yu-Jen Wang ,  Yi-Cheng Chen

公开(公告)号：US20070253244A1

公开(公告)日：2007-11-01

申请号：US11380777

申请日：2006-04-28

Applicant: Chih-Huo Wu ,  Chih-Huang Lai ,  Yu-Jen Wang ,  Denny Tang

Inventor： Chih-Huo Wu ,  Chih-Huang Lai ,  Yu-Jen Wang ,  Denny Tang

IPC: G11C11/14

CPC classification number: G11C11/16 ,  G11C29/50 ,  G11C2029/5002

Abstract: An apparatus and methods for a non-volatile magnetic random access memory (MRAM) device that includes a word line, a bit line, and a magnetic thin film memory element located at an intersection of the word and bit lines. The magnetic thin film memory element includes an alloy of a rare earth element and a transition metal element. The word line is operable to heat the magnetic thin film memory element when a heating current is applied. Heating of the magnetic thin film memory element to a predetermined temperature reduces its coercivity, which allows switching of the magnetic state upon application of a magnetic field. The magnetic state of the thin film element can be determined in accordance with principles of the Hall effect.

Abstract translation: 一种用于非易失磁性随机存取存储器（MRAM）器件的装置和方法，其包括位于字线和位线的交叉点处的字线，位线和磁薄膜存储元件。 磁性薄膜存储元件包括稀土元素和过渡金属元素的合金。 当施加加热电流时，字线可操作以加热磁性薄膜存储元件。 将磁性薄膜存储元件加热到预定温度降低其矫顽力，这允许在施加磁场时磁性转换。 薄膜元件的磁状态可以根据霍尔效应的原理来确定。

公开(公告)号：US20070217515A1

公开(公告)日：2007-09-20

申请号：US11308281

申请日：2006-03-15

Applicant: Yu-Jen Wang ,  Tian-Sheuan Chang ,  Tse-Ming Chang

Inventor： Yu-Jen Wang ,  Tian-Sheuan Chang ,  Tse-Ming Chang

IPC: H04N11/04

CPC classification number: H04N19/51 ,  H04N19/523 ,  H04N19/533

Abstract: A method for determining a search pattern for use in fractional motion estimation for video compression includes selecting a search center within a current macroblock; selecting a plurality of search points forming a half-pel search pattern surrounding the search center, and further selecting another search point at the search center; calculating a cost value for each search point according to a first cost function; and selecting a quarter-pel search pattern according to the cost values of at least two search points, the half-pel search pattern and the quarter-pel search pattern forming the search pattern. The search pattern is used in a matching process to determine a similarity of the current macroblock to a reference macroblock in a video undergoing compression.

Abstract translation: 一种用于确定用于视频压缩的分数运动估计的搜索模式的方法包括：选择当前宏块内的搜索中心; 选择形成围绕搜索中心的半像素搜索模式的多个搜索点，并且在搜索中心进一步选择另一个搜索点; 根据第一成本函数计算每个搜索点的成本值; 以及根据至少两个搜索点的成本值，形成搜索模式的半像素搜索模式和四分之一像素搜索模式来选择四分之一像素搜索模式。 在匹配处理中使用搜索模式来确定当前宏块与经历压缩的视频中的参考宏块的相似度。

公开(公告)号：US06658694B2

公开(公告)日：2003-12-09

申请号：US10104231

申请日：2002-03-22

Applicant: Yu-Jen Wang

Inventor： Yu-Jen Wang

IPC: E05F320

CPC classification number: E05F1/1223 ,  E05D11/08 ,  E05D2003/027 ,  E05F1/063 ,  E05F1/1292 ,  E05F3/20 ,  E05Y2201/638 ,  E05Y2900/132 ,  Y10T16/2771 ,  Y10T16/304 ,  Y10T16/53826 ,  Y10T16/5387 ,  Y10T16/540255

Abstract: A hinge member includes a rotatable cam element with a first cam face and a slidable cam element with a second cam face associated with the first cam face in such a manner that the second cam face moves away from the first cam face when the slidable cam element is cammed by the rotatable cam element due to an applied external force. A biasing member is connected to the slidable cam element so as to accumulate a returning force when the second cam face moves away from the first cam face and so as to urge the second cam face to move toward the first cam face when the external force ceases to be applied on the rotatable cam element.

Abstract translation: 铰链构件包括具有第一凸轮面的可旋转凸轮元件和具有与第一凸轮面相关联的第二凸轮面的可滑动凸轮元件，使得当可滑动凸轮元件的第二凸轮面移动离开第一凸轮面时 由于施加的外力，由可旋转的凸轮元件凸轮。 偏置构件连接到可滑动的凸轮元件，以便当第二凸轮面远离第一凸轮面移动时累积返回力，并且当外力停止时，推动第二凸轮面向第一凸轮面移动 施加在可旋转的凸轮元件上。

公开(公告)号：US20150096545A1

公开(公告)日：2015-04-09

申请号：US14049231

申请日：2013-10-09

Applicant: Yu-Jen Wang

Inventor： Yu-Jen Wang

IPC: F41B11/80 ,  F41B11/54

CPC classification number: F41B11/80 ,  F41B11/54 ,  F41B11/89

Abstract: A ribbon dispenser includes a body with a front cover. A cylinder is rotatably located in the body and has multiple chambers in which ribbons are received. An inlet is defined through the rear end of each chamber. A striking unit is located in the body and located behind the cylinder to introduce air into the chambers via the inlets. A revolving unit is connected to the cylinder to revolve the cylinder. A rigger is pivotably connected to the body has a driving portion to drive the striking unit. A stud protrudes from one side of the trigger so as to drive the revolving unit. The ribbons are ejected out from the body when the striking unit introduces air into the chambers. The cylinder is revolved to allow the ribbons in each room are ejected in sequence.

Abstract translation: 色带分配器包括具有前盖的主体。 圆柱体可旋转地位于主体中并且具有多个腔室，其中容纳带。 通过每个室的后端限定入口。 一个醒目的单元位于机身后面，位于气缸后面，通过入口将空气引入腔室。 旋转单元连接到气缸以使气缸旋转。 枢轴连接到主体上的操纵器具有驱动打击单元的驱动部分。 螺柱从触发器的一侧突出以驱动旋转单元。 当打击单元将空气引入室内时，带状物从体内排出。 圆筒被旋转以允许每个房间中的丝带依次排出。

公开(公告)号：US08981503B2

公开(公告)日：2015-03-17

申请号：US13421963

申请日：2012-03-16

Applicant: Robert Beach ,  Guenole Jan ,  Yu-Jen Wang ,  Witold Kula ,  Po-Kang Wang

Inventor： Robert Beach ,  Guenole Jan ,  Yu-Jen Wang ,  Witold Kula ,  Po-Kang Wang

IPC: H01L43/08 ,  G11C11/16

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/228 ,  H01L43/12

Abstract: An STT MTJ cell is formed with a magnetic anisotropy of its free and reference layers that is perpendicular to their planes of formation. The reference layer of the cell is an SAF multilayered structure with a single magnetic domain to enhance the bi-stability of the magnetoresistive states of the cell. The free layer of the cell is etched back laterally from the reference layer, so that the fringing stray field of the reference layer is no more than 15% of the coercivity of the free layer and has minimal effect on the free layer.

Abstract translation: 形成具有垂直于其形成平面的游离和参考层的磁各向异性的STT MTJ电池。 单元的参考层是具有单个磁畴的SAF多层结构，以增强单元的磁阻状态的双稳定性。 电池的自由层从参考层横向回蚀刻，使得参考层的边缘杂散场不超过自由层的矫顽力的15％，并且对自由层的影响最小。

公开(公告)号：US08889507B2

公开(公告)日：2014-11-18

申请号：US11765971

申请日：2007-06-20

Applicant: Chih-Ta Wu ,  Jason Lee ,  Chung Chien Wang ,  Hsing-Lien Lin ,  Yu-Jen Wang ,  Yeur-Luen Tu ,  Chern-Yow Hsu ,  Yuan-Hung Liu ,  Chi-Hsin Lo ,  Chia-Shiung Tsai ,  Lucy Chang ,  Chia-Lin Chen ,  Ming-Chih Tsai

Inventor： Chih-Ta Wu ,  Jason Lee ,  Chung Chien Wang ,  Hsing-Lien Lin ,  Yu-Jen Wang ,  Yeur-Luen Tu ,  Chern-Yow Hsu ,  Yuan-Hung Liu ,  Chi-Hsin Lo ,  Chia-Shiung Tsai ,  Lucy Chang ,  Chia-Lin Chen ,  Ming-Chih Tsai

IPC: H01L21/8234 ,  H01L21/8244 ,  H01L49/02 ,  H01L27/108

CPC classification number: H01L27/10814 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/75

Abstract: A capacitor and methods for forming the same are provided. The method includes forming a bottom electrode; treating the bottom electrode in an oxygen-containing environment to convert a top layer of the bottom electrode into a buffer layer; forming an insulating layer on the buffer layer; and forming a top electrode over the insulating layer.

Abstract translation: 提供电容器及其形成方法。 该方法包括形成底部电极; 在含氧环境中处理底部电极以将底部电极的顶层转化为缓冲层; 在缓冲层上形成绝缘层; 并在所述绝缘层上形成顶部电极。

公开(公告)号：US08852760B2

公开(公告)日：2014-10-07

申请号：US13448557

申请日：2012-04-17

Applicant: Yu-Jen Wang ,  Witold Kula ,  Ru-Ying Tong ,  Guenole Jan

Inventor： Yu-Jen Wang ,  Witold Kula ,  Ru-Ying Tong ,  Guenole Jan

IPC: H01L29/82 ,  G01R33/09 ,  G11B5/39

CPC classification number: G01R33/091 ,  G11B5/3906 ,  H01F10/123 ,  H01F10/3286 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  Y10T428/1114 ,  Y10T428/1143

Abstract: A boron or boron containing dusting layer such as CoB or FeB is formed along one or both of top and bottom surfaces of a free layer at interfaces with a tunnel barrier layer and capping layer to improve thermal stability while maintaining other magnetic properties of a MTJ stack. Each dusting layer has a thickness from 0.2 to 20 Angstroms and may be used as deposited, or at temperatures up to 400° C. or higher, or following a subsequent anneal at 400° C. or higher. The free layer may be a single layer of CoFe, Co, CoFeB or CoFeNiB, or may include a non-magnetic insertion layer. The resulting MTJ is suitable for STT-MRAM memory elements or spintronic devices. Perpendicular magnetic anisotropy is maintained in the free layer at temperatures up to 400° C. or higher. Ku enhancement is achieved and the retention time of a memory cell for STT-MRAM designs is increased.

Abstract translation: 在具有隧道势垒层和封盖层的界面处，在自由层的顶表面和底表面中的一个或两个上形成含硼或含硼的除尘层，以改善热稳定性，同时保持MTJ堆叠的其它磁性能 。 每个除尘层的厚度为0.2至20埃，可用于沉积，或在高达400℃或更高的温度下使用，或随后在400℃或更高温度下退火。 自由层可以是CoFe，Co，CoFeB或CoFeNiB的单层，或者可以包括非磁性插入层。 所得MTJ适用于STT-MRAM存储器元件或自旋电子器件。 垂直磁各向异性在高达400℃或更高的温度下保持在自由层中。 实现了Ku增强，并且用于STT-MRAM设计的存储单元的保留时间增加。