摘要:
An image forming apparatus which performs toner discharge control for held toners of respective colors, comprises: an image carrier; a transfer member on which toner images of the respective colors formed on the image carrier are transferred and superposed; a calculation unit configured to calculate toner amounts used to form the toner images of the respective colors; and a control unit configured to superpose toners of at least two colors onto the transfer member when the toner amounts calculated by the calculation unit are smaller than a predetermined consumption amount, wherein the control unit decides a combination of colors of the toners to be superposed in accordance with differences between the toner amounts and the predetermined consumption amount.
摘要:
An electromagnetic switch has a contact device having a pair of fixed contacts fixed thereof and maintaining a predetermined interval inside an arc-extinguishing chamber receptacle, and a movable contact disposed to be connectable with the pair of fixed contacts; and an electromagnetic device driving the movable contact. The electromagnetic device has a cylindrical exciting coil, a fixed core passing through center of the exciting coil, a magnetic yoke covering an outer side of the exciting coil, and a movable core facing the fixed core and the magnetic yoke, and armature surfaces of the fixed core and the magnetic yoke are formed on a side of the contact device than the exciting coil.
摘要:
There is obtained a particle beam therapy system in which the beam size is reduced. There are provided an accelerator 14 that accelerates a charged particle beam; an irradiation apparatus that has a beam scanning apparatus 5a, 5b for performing scanning with the charged particle beam and irradiates the charged particle beam onto an irradiation subject; and a beam transport apparatus 15 that has a duct for ensuring a vacuum region or gas region that continues from the accelerator 14 to a beam outlet window 7 disposed at a more downstream position than the beam scanning apparatus 5a, 5b, and that transports the charged particle beam exiting from the accelerator 14 to the irradiation apparatus.
摘要:
An inexpensive scanning irradiation device of a particle beam is obtained without using a rotating gantry. A first scanning electromagnet and a second scanning electromagnet, whose deflection surfaces of the particle beam are the same, and which bend the particle beam having an incident beam axis angle of approximately 45 degrees relative to a horizontal direction in reverse directions to each other; an electromagnet rotation driving mechanism which integrates the first and the second scanning electromagnets and rotates these scanning electromagnets around the incident beam axis; and a treatment bed are provided. The particle beam deflected by the first and the second scanning electromagnets can be obtained at a range of −45 degrees to +45 degrees in deflection angle from an incident beam axis direction.
摘要:
The invention is to stabilize an amount of application of a glue to sheets, to stabilize adhesive force between the sheets, and to further improve the productivity of a glued sheet bundle. A sheet processing apparatus includes a processing tray 130 that stacks a sheet discharged by a pair of discharge rollers, an attitude changing unit 150 that displaces the aligned sheet bundle on the processing tray 130 to partially expose sheet surfaces, an adhesive agent delivery device 160 that applies a glue to the exposed parts of the sheet surfaces of the displaced sheet bundle on the processing tray 130, and a sheet bundle aligning portion such as aligning plates 140 and 141 that aligns the glued sheet bundle.
摘要:
An infrared shielding film-coated glass plate comprising a glass substrate and an infrared shielding film formed thereon, wherein the infrared shielding film comprises fine ITO particles having an average primary particle diameter of at most 100 nm dispersed in a matrix containing silicon oxide as the main component and containing nitrogen in an amount of at least 2 at % based on Si and has a film thickness of from 200 to 3,000 nm.
摘要:
There is disclosed a substrate processing method by a multi-patterning technique, which comprises a lithography process and an etching process, each of the processes is performed to one substrate at least twice. The substrate processing method is performed by using a substrate processing system comprising a plurality of process units for performing respective steps of the lithography process. When a second lithography process is performed to a substrate, process unit(s) for performing one or more steps of the second lithography process to be used in the second lithography process is automatically selected based on the process history of the first lithography process in such a way that the process unit(s) to be used in the second lithography process is (are) identical to the processed unit(s) used in the first lithography process.
摘要:
A substrate processing system (100) includes a first automated substrate transfer line or main transfer line (20) configured to transfer wafers (W) over the entire system and to transfer wafers to and from respective process sections, and a second automated substrate transfer line or auxiliary transfer line (30) configured to transfer wafers (W) inside a photolithography process section (1a). The auxiliary transfer line (30) is disposed as a transfer mechanism independent of the main transfer line (20). An OHT (31) is configured to travel around on the auxiliary transfer line (30) having a loop shape, so as to transfer wafers (W) to and from and among the respective process apparatuses in the photolithography process section (1a).
摘要:
In the present invention, there is provided a method for manufacturing a semiconductor device that has on a semiconductor substrate first and second transistor groups having different operating voltages respectively, the first transistor group having a first gate electrode, the second transistor group having a second gate electrode, the method including the steps of: forming the silicide layer on the first gate electrode of the first transistor group after setting a height of the first gate electrode smaller than a height of a dummy gate electrode formed in a dummy gate part; and forming a gate forming trench by removing the dummy gate part after forming an interlayer insulating film that covers a silicide layer and planarizing a surface of the interlayer insulating film.