公开(公告)号：US20110068402A1

公开(公告)日：2011-03-24

申请号：US12881641

申请日：2010-09-14

申请人： Satoru Takasawa ,  Satoru Ishibashi ,  Kyuzo Nakamura ,  Tadashi Masuda

发明人： Satoru Takasawa ,  Satoru Ishibashi ,  Kyuzo Nakamura ,  Tadashi Masuda

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L23/53238 ,  C23C14/0057 ,  C23C14/185 ,  H01L21/2855 ,  H01L21/76841 ,  H01L23/53233 ,  H01L27/124 ,  H01L29/458 ,  H01L2924/0002 ,  H01L2924/00

摘要： A metallic wiring film, which is not exfoliated even when exposed to a plasma of hydrogen, is provided. A metallic wiring film 20a is constituted by an adhesion layer 51 in which an additive metal is added to copper and a low-resistance metallic layer 52, which is made of pure copper, is disposed on the adhesion layer 51. When the additive metal made of at least one of Ti, Zr and Cr, and oxygen are included in a copper alloy which is in the adhesion layer 51 and a source electrode and a drain electrode are formed from it, copper does not precipitate at an interface between the adhesion layer 51 and the silicon layer even when being exposed to the hydrogen plasma, which prevents exfoliation from occurring between the adhesion layer 51 and the silicon layer. If the amount of additive metal increases, the adhesion layer 51 cannot be etched with an etching liquid for etching the low-resistance metallic layer 52, so that the maximum additional amount to permit the etching to be performed is the upper limit.

摘要翻译： 提供即使暴露于氢等离子体时也不会剥离的金属布线膜。 金属布线膜20a由在铜中添加添加金属的粘合层51和由纯铜制成的低电阻金属层52设置在粘合层51上。当添加金属制成 的Ti，Zr和Cr中的至少一种，并且氧被包括在粘合层51中的铜合金中，并且源电极和漏电极由它形成，铜不会在粘合层 51和硅层，即使当暴露于氢等离子体时，其防止粘附层51和硅层之间发生剥离。 如果添加金属的量增加，则不能用用于蚀刻低电阻金属层52的蚀刻液来蚀刻粘合层51，使得允许进行蚀刻的最大附加量为上限。

公开(公告)号：US20080210138A1

公开(公告)日：2008-09-04

申请号：US11813455

申请日：2005-11-07

申请人： Satoru Ishibashi

发明人： Satoru Ishibashi

IPC分类号： B65D19/00

CPC分类号： B65D19/40 ,  B65D19/0012 ,  B65D19/0028 ,  B65D19/0075 ,  B65D2519/00019 ,  B65D2519/00054 ,  B65D2519/00124 ,  B65D2519/00288 ,  B65D2519/00293 ,  B65D2519/00318 ,  B65D2519/00323 ,  B65D2519/00338 ,  B65D2519/00343 ,  B65D2519/00373 ,  B65D2519/00407 ,  B65D2519/00437 ,  B65D2519/00557 ,  B65D2519/00562 ,  B65D2519/0094

摘要： A paperboard three-dimensionally molded pallet having sufficient rigidity in its load carrying surface and load bearing strength in its leg portions. The pallet is so designed that when it is finally treated as a waste, it can be recycled as new paperboard three-dimensionally molded pallets or a material for the other paper products requiring rigidity. The pallet comprises a paper-made plate-like top plate member (1) and paper-made cylinder-with-base legs (2). A plurality of through holes (15) is provided in the top plate member (1), and the cylinder-with-base-type leg (2) is inserted into the through hole (15) and then joined to the top plate member (1) with a water soluble adhesive agent. The top plate member (1) and the cylinder-with-base-type leg (2) are produced by placing a water-absorbed plane laminated paper as a raw material in a mold to shape it into a specific shape by thermal dehydration under pressure process.

摘要翻译： 一种纸板三维模制托盘，其承载表面具有足够的刚性，并在其腿部具有承载强度。 托盘的设计使得当它最终被作为废物处理时，可以作为新的纸板三维模制的托盘或用于需要刚性的其它纸制品的材料被再循环。 托盘包括纸制的板状顶板构件（1）和带有纸的圆筒底座腿（2）。 在顶板部件（1）中设置有多个通孔（15），并且将圆筒状的底座型脚（2）插入通孔（15）中，然后与顶板部件 1）用水溶性粘合剂。 通过将作为原料的吸水面层压纸放置在模具中，通过在压力下进行热脱水将其成形为特定形状来制造顶板构件（1）和圆筒状底座型脚（2） 处理。

公开(公告)号：US07033461B2

公开(公告)日：2006-04-25

申请号：US10284287

申请日：2002-10-31

申请人： Noriaki Tani ,  Toshihiro Suzuki ,  Satoshi Ikeda ,  Hiroaki Kawamura ,  Satoru Ishibashi ,  Kouichi Hanzawa ,  Takafumi Matsumoto

发明人： Noriaki Tani ,  Toshihiro Suzuki ,  Satoshi Ikeda ,  Hiroaki Kawamura ,  Satoru Ishibashi ,  Kouichi Hanzawa ,  Takafumi Matsumoto

IPC分类号： C23C14/35 ,  C23C16/00

CPC分类号： C23C14/044 ,  C23C14/545

摘要： The present invention provides an efficient thin film forming apparatus which is capable of correcting a film thickness so as to take care of a variation in distribution in the film thickness and to take care of the circumferential distribution of the film thickness, as well as a method for forming a thin film using this film forming apparatus. The method comprises the first step of first forming a thin film to a predetermined percentage out of thickness through an opening 8a in a shutter 8, the second step of then using a film thickness monitor 10 to measure the distribution of the thickness of the thin film formed in the first step, and the third step of reducing a film formation rate by an opening 8b in the shutter 8 between a substrate 4 and a sputtering cathode 6 as compared to that of the first step and correcting the thickness of the thin film by an opening 13a in the first film thickness correcting plate 13 between the substrate 4 and the sputtering cathode 6 corresponding to the distribution of the film thickness measured by the film thickness monitor 10 in the second step. Then, the second step is carried out again, during which the film thickness monitor 10 is used to measure the distribution of the thickness of the thin film formed in the third step. Further, the third and second steps are repeatedly carried out.

摘要翻译： 本发明提供了一种有效的薄膜形成装置，该薄膜形成装置能够校正膜厚度，以便保证薄膜厚度分布的变化，并且能够保证薄膜厚度的周向分布，以及方法 用于使用该成膜装置形成薄膜。 该方法包括首先通过快门8中的开口8a将薄膜首先形成预定百分比的厚度的第一步骤，然后使用薄膜厚度监测器10来测量薄膜厚度的分布的第二步骤 在第一步骤中形成的薄膜，以及第三步骤，通过与第一步骤相比在基板4和溅射阴极6之间的快门8中的开口8b降低成膜速率，并且校正薄膜的厚度 在第二步骤中，由基板4和溅射阴极6之间的第一膜厚校正板13的开口部分13a对应于由膜厚度监视器10测量的膜厚度的分布。 然后，再次进行第二步骤，在此期间，膜厚度监测器10用于测量在第三步骤中形成的薄膜的厚度分布。 此外，重复执行第三和第二步骤。

公开(公告)号：US08470651B2

公开(公告)日：2013-06-25

申请号：US13064858

申请日：2011-04-21

申请人： Satoru Takasawa ,  Satoru Ishibashi ,  Tadashi Masuda

发明人： Satoru Takasawa ,  Satoru Ishibashi ,  Tadashi Masuda

IPC分类号： H01L21/84

CPC分类号： H01L29/66765 ,  C23C14/0036 ,  C23C14/185 ,  C23C14/5826 ,  H01L21/2855 ,  H01L23/53233 ,  H01L27/124 ,  H01L29/458 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a metallic wiring film which is not peeled away even when exposed to a hydrogen plasma. A metallic wiring film is constituted by an adhesion layer containing copper, Ca, and oxygen and a low-resistance metal layer (a layer of a copper alloy or pure copper) having a lower resistance than the adhesion layer. When the adhesion layer is composed of a copper alloy, which contains Ca and oxygen, and a source electrode film and a drain electrode film adhering to an ohmic contact layer are constituted by the adhesion layer, even if the adhesion layer is exposed to the hydrogen plasma, a Cu-containing oxide formed at an interface between the adhesion layer and the ohmic contact layer is not reduced, so that no peeling occurs between the adhesion layer and a silicon layer.

摘要翻译： 提供即使暴露于氢等离子体也不会剥离的金属配线膜。 金属布线膜由包含铜，Ca和氧的粘合层和具有比粘合层低的电阻的低电阻金属层（铜合金或纯铜的一层）构成。 当粘合层由含有Ca和氧的铜合金构成，并且附着在欧姆接触层上的源电极膜和漏电极膜由粘合层构成时，即使粘附层暴露于氢 等离子体，在粘合层和欧姆接触层之间的界面处形成的含Cu氧化物不会降低，使得粘附层和硅层之间不会发生剥离。

公开(公告)号：US08373832B2

公开(公告)日：2013-02-12

申请号：US13503699

申请日：2010-10-21

申请人： Satoru Takasawa ,  Masanori Shirai ,  Satoru Ishibashi

发明人： Satoru Takasawa ,  Masanori Shirai ,  Satoru Ishibashi

IPC分类号： G02F1/1343

CPC分类号： H01L21/76843 ,  G02F1/136286 ,  G02F2001/13629 ,  G02F2001/136295 ,  H01L27/124

摘要： An electrode film, which is not peeled off from an oxide thin film and in which a copper atom does not diffuse into the oxide thin film, is provided. A wiring layer is composed of a high-adhesion barrier film 37, which is a thin film of Cu—Mg—Al and a copper thin film 38; and the high-adhesion barrier film 37 is brought into contact with the oxide thin film. When a total number of atoms of copper, magnesium, and aluminum is set to 100 at %, if the high-adhesion barrier film 37 contains magnesium in a range of between 0.5 at % and 5 at and aluminum in a range of between 5 at % and 15 at %, then wiring layers 50a, 50b, can be obtained, whereby the adhesion and the barrier property are compatible with each other, adherence is strong, and a copper atom does not diffuse.

摘要翻译： 提供了未从氧化物薄膜剥离并且铜原子不扩散到氧化物薄膜中的电极膜。 布线层由作为Cu-Mg-Al的薄膜和铜薄膜38的高粘合阻挡膜37构成， 并使高附着阻挡膜37与氧化物薄膜接触。 当铜，镁和铝的原子总数设定为100原子％时，如果高粘合阻挡膜37含有0.5at％至5at的范围内的镁，并且在5at ％和15原子％，然后可以获得布线层50a，50b，由此粘合性和阻隔性彼此相容，粘附性强，铜原子不扩散。

公开(公告)号：US08299529B2

公开(公告)日：2012-10-30

申请号：US12881652

申请日：2010-09-14

申请人： Satoru Takasawa ,  Satoru Ishibashi ,  Tadashi Masuda

发明人： Satoru Takasawa ,  Satoru Ishibashi ,  Tadashi Masuda

IPC分类号： H01L27/01 ,  H01L21/00

CPC分类号： H01L23/53238 ,  H01L23/53233 ,  H01L27/124 ,  H01L29/458 ,  H01L2924/0002 ,  H01L2924/00

摘要： A metallic wiring film, which is not exfoliated even when exposed to plasma of hydrogen, is provided. A metallic wiring film is constituted by an adhesion layer in which Al is added to copper and a metallic low-resistance layer which is disposed on the adhesion layer and made of pure copper. When a copper alloy including Al and oxygen are included in the adhesion layer and a source electrode and a drain electrode are formed from it, copper does not precipitate at an interface between the adhesion layer and the silicon layer even when being exposed to the hydrogen plasma, which prevents the occurrence of exfoliation between the adhesion layer and the silicon layer. If the amount of Al increases, since widths of the adhesion layer and the metallic low-resistance layer largely differ after etching, the maximum addition amount for permitting the etching to be performed is the upper limit.

摘要翻译： 提供即使暴露于氢等离子体时也不会剥离的金属布线膜。 金属布线膜由其中添加有Al的粘合层和设置在粘合层上并由纯铜制成的金属低电阻层构成。 当包含Al和氧的铜合金包括在粘合层中并且由其形成源电极和漏电极时，即使当暴露于氢等离子体时，铜也不会在粘附层和硅层之间的界面处析出 ，其防止粘附层和硅层之间的剥离的发生。 如果Al的量增加，由于粘合层和金属低电阻层的宽度在蚀刻之后大大不同，所以允许进行蚀刻的最大添加量是上限。

公开(公告)号：US20120262659A1

公开(公告)日：2012-10-18

申请号：US13503699

申请日：2010-10-21

申请人： Satoru Takasawa ,  Masanori Shirai ,  Satoru Ishibashi

发明人： Satoru Takasawa ,  Masanori Shirai ,  Satoru Ishibashi

IPC分类号： G02F1/1343 ,  H05K1/09 ,  H01L29/78

CPC分类号： H01L21/76843 ,  G02F1/136286 ,  G02F2001/13629 ,  G02F2001/136295 ,  H01L27/124

摘要： An electrode film, which is not peeled off from an oxide thin film and in which a copper atom does not diffuse into the oxide thin film, is provided. A wiring layer is composed of a high-adhesion barrier film 37, which is a thin film of Cu—Mg—Al and a copper thin film 38; and the high-adhesion barrier film 37 is brought into contact with the oxide thin film. When a total number of atoms of copper, magnesium, and aluminum is set to 100 at %, if the high-adhesion barrier film 37 contains magnesium in a range of between 0.5 at % and 5 at and aluminum in a range of between 5 at % and 15 at %, then wiring layers 50a, 50b, can be obtained, whereby the adhesion and the barrier property are compatible with each other, adherence is strong, and a copper atom does not diffuse,

摘要翻译： 提供了未从氧化物薄膜剥离并且铜原子不扩散到氧化物薄膜中的电极膜。 布线层由作为Cu-Mg-Al的薄膜和铜薄膜38的高粘合阻挡膜37构成， 并使高附着阻挡膜37与氧化物薄膜接触。 当铜，镁和铝的原子总数设定为100原子％时，如果高粘合阻挡膜37含有0.5at％至5at的范围内的镁，并且在5at ％和15原子％，然后可以获得布线层50a，50b，由此粘附性和阻隔性彼此相容，粘附性强，铜原子不扩散，

公开(公告)号：US20120119269A1

公开(公告)日：2012-05-17

申请号：US13310056

申请日：2011-12-02

申请人： Satoru TAKASAWA ,  Masanori Shirai ,  Satoru Ishibashi ,  Tadashi Masuda ,  Yasuo Nakadai

发明人： Satoru TAKASAWA ,  Masanori Shirai ,  Satoru Ishibashi ,  Tadashi Masuda ,  Yasuo Nakadai

IPC分类号： H01L29/78 ,  H01L23/48 ,  B05D5/12

CPC分类号： H01L23/53238 ,  C22C9/00 ,  G02F2001/136295 ,  H01L27/124 ,  H01L2924/0002 ,  H01L2924/00

摘要： A technique is provided which prevents an increase in the resistivity of a conductive wiring film. A conductive layer containing Ca in a content rate of 0.3 atom % or more is provided on the surfaces of each of conductive wiring films which are to be exposed to a gas containing a Si atom in a chemical structure at a high temperature. When a gate insulating layer or a protection film containing Si is formed on the surface of the conductive layer, the Si atoms do not diffuse into the conductive layer and a resistance value does not increase, even if the conductive layer is exposed to the raw material gas containing Si in a chemical structure . Further, a CuCaO layer can be formed as an adhesive layer for preventing Si diffusion from a glass substrate or a silicon semiconductor.

摘要翻译： 提供了防止导电布线膜的电阻率增加的技术。 在高温化学结构中暴露于含有Si原子的气体的导电布线膜的表面上，设置含有0.3原子％以上的Ca的导电层。 当在导电层的表面上形成栅绝缘层或含有Si的保护膜时，即使导电层暴露于原料，Si原子也不会扩散到导电层中，并且电阻值不增加 含有化学结构中的Si的气体。 此外，CuCaO层可以形成为用于防止Si从玻璃衬底或硅半导体扩散的粘合剂层。

公开(公告)号：US07785596B2

公开(公告)日：2010-08-31

申请号：US10571277

申请日：2004-09-08

申请人： Hideyuki Okano ,  James Hirotaka Okano ,  Masanori Sakaguchi ,  Hidehiro Mizusawa ,  Satoru Ishibashi

发明人： Hideyuki Okano ,  James Hirotaka Okano ,  Masanori Sakaguchi ,  Hidehiro Mizusawa ,  Satoru Ishibashi

IPC分类号： C12N5/10 ,  C12N15/74 ,  C12N15/75 ,  C12N15/82

CPC分类号： C12N5/0623 ,  A61K35/30 ,  C12N2501/59

摘要： Methods for enhancing survival and/or proliferation of neural stem cells and pharmaceutical compositions containing neural stem cells prepared by such methods, together with methods for assaying factors enhancing survival and/or proliferation of neural stem cells and methods for screening for such factors.Either Galectin-1 is overexpressed in neural stem cells or neural stem cells are cultured in a liquid medium containing Galectin-1. Pharmaceutical compositions containing Galectin-1-overexpressing neural stem cells and pharmaceutical composition containing Galectin-1, prepared by the aforementioned methods, improve higher cerebral functions damaged by cerebral ischemia. Further, by seeding neural stem cells at clonal concentrations and determining whether the seeded neural stem cells are capable of proliferating in an assay medium to be assayed, whether the factor enhances survival and/or proliferation of neural stem cells is assayed and a factor enhancing survival and/or proliferation of neural stem cells are identified using this assay method.

摘要翻译： 用于增强神经干细胞的存活和/或增殖的方法以及通过这些方法制备的含有神经干细胞的药物组合物，以及用于测定增强神经干细胞的存活和/或增殖的因子的方法以及用于筛选这些因子的方法。 在神经干细胞中Galectin-1过表达或神经干细胞在含有Galectin-1的液体培养基中培养。 含有Galectin-1-过表达神经干细胞的药物组合物和含有通过上述方法制备的Galectin-1的药物组合物改善了由脑缺血损伤的较高脑功能。 此外，通过以克隆浓度接种神经干细胞并确定接种的神经干细胞是否能够在要测定的测定培养基中增殖，测定该因子是否增强神经干细胞的存活和/或增殖，并且提高生存的因子 和/或使用该测定方法鉴定神经干细胞的增殖。

公开(公告)号：US20100075475A1

公开(公告)日：2010-03-25

申请号：US12630245

申请日：2009-12-03

申请人： Satoru TAKASAWA ,  Yuuichi Oishi ,  Miho Shimizu ,  Tooru Kikuchi ,  Satoru Ishibashi

发明人： Satoru TAKASAWA ,  Yuuichi Oishi ,  Miho Shimizu ,  Tooru Kikuchi ,  Satoru Ishibashi

IPC分类号： H01L21/336 ,  H01L21/443

CPC分类号： H01L29/4908 ,  H01L27/124 ,  H01L29/458

摘要： An electrode is prevented from being peeled from a substrate or a silicon layer. After the surface of a first copper thin film composed mainly of copper is treated by exposing it to an ammonia gas, a film of silicon nitride is formed on the surface of the first copper thin film by generating a plasma of a raw material gas containing a silane gas and an ammonia gas in an atmosphere in which an object to be processed is placed. Since the surface is preliminarily treated with the ammonia gas, the silane gas is prevented from being diffused into the first copper thin film. Therefore, an electrode constituted by the surface-treated first copper thin film is not peeled from the glass substrate or the silicon layer. In addition, its electric resistance value does not rise.

摘要翻译： 防止电极从基板或硅层剥离。 在通过将其暴露于氨气来处理主要由铜构成的第一铜薄膜的表面之后，通过生成含有原料气体的原料气体的等离子体，在第一铜薄膜的表面上形成氮化硅膜 在其中放置待加工物体的气氛中的硅烷气体和氨气。 由于表面被氨气预处理，因此防止硅烷气体扩散到第一铜薄膜中。 因此，由表面处理的第一铜薄膜构成的电极不会从玻璃基板或硅层剥离。 此外，其电阻值不上升。