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275 条记录 (耗时 0.043 秒)

    Magnetoresistance effect device having hard magnetic film structural body
    51.
    发明授权
    Magnetoresistance effect device having hard magnetic film structural body 失效
    具有硬磁性膜结构体的磁阻效应器件

    公开(公告)号：US07116527B1

    公开(公告)日：2006-10-03

    申请号：US08940020

    申请日：1997-09-29

    申请人： Hideaki Fukuzawa ,  Shin-ichi Nakamura ,  Yuzo Kamiguchi ,  Hitoshi Iwasaki ,  Akio Hori ,  Susumu Hashimoto

    发明人： Hideaki Fukuzawa ,  Shin-ichi Nakamura ,  Yuzo Kamiguchi ,  Hitoshi Iwasaki ,  Akio Hori ,  Susumu Hashimoto

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3932 ,  B82Y25/00 ,  H01F10/132 ,  H01F10/16 ,  H01F10/3281 ,  H01L43/08

    摘要： A base film of a hard magnetic film containing Co as a structural element has a crystal metal base film such as a Cr film formed on the main surface of a substrate and a reactive base film (mixing layer) formed between the substrate and the crystal metal base film and having a reactive amorphous layer containing a structural element of the substrate and a structural element of the crystal metal base film. A hard magnetic film containing Co as a structural element is formed on the crystal metal base film. With the crystal metal base film such as the Cr film formed on an amorphous layer, a hard magnetic film with a bi-crystal structure can be obtained with high reproducibility. With the hard magnetic film, magnetic characteristics such as coercive force Hc, residual magnetization Mr, saturated magnetization Ms, and square ratio S can be improved without need to use a thick base film. The hard magnetic film containing Co as a structural element is applied to a bias magnetic field applying film of a magnetoresistance effect device and a record layer of a magnetic record medium.

    摘要翻译： 含有Co作为结构元件的硬磁性膜的基膜具有形成在基板的主表面上的Cr膜等晶体金属基膜和在基板和结晶金属之间形成的反应性基膜（混合层） 并且具有包含基板的结构元件的反应性非晶层和晶体金属基膜的结构元件。 在晶体金属基膜上形成含有Co作为结构元素的硬磁性膜。 利用在非晶层上形成的Cr膜等晶体金属基膜，可以以高再现性获得具有双晶结构的硬磁性膜。 对于硬磁性膜，可以提高矫顽力Hc，剩余磁化强度Mr，饱和磁化强度Ms和平方比S等磁特性，而无需使用厚基膜。 含有Co作为结构元件的硬磁性膜被施加到磁阻效应装置的偏磁场施加膜和磁记录介质的记录层。

    Magneto-resistance effect element having a magnetic biasing film
    53.
    发明授权
    Magneto-resistance effect element having a magnetic biasing film 失效
    具有磁偏置膜的磁阻效应元件

    公开(公告)号：US6118624A

    公开(公告)日：2000-09-12

    申请号：US69163

    申请日：1998-04-29

    申请人： Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Hitoshi Iwasaki

    发明人： Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Hitoshi Iwasaki

    IPC分类号： G11B5/012 ,  G11B5/31 ,  G11B5/39 ,  G11C11/15 ,  H01F10/08 ,  H01F10/30 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  H01F10/3268 ,  H01L43/08 ,  G11B2005/3996 ,  G11B5/012 ,  G11B5/3113 ,  G11B5/3954 ,  H01F10/3295

    摘要： A spin valve GMR element comprises a spin valve GMR film stacked in turn a pinned layer, a non-magnetic layer, and a free layer of which magnetization direction varies according to an external magnetic field, and a magnetic biasing film providing a bias magnetic field to the free layer. A spin valve GMR film can be a dual element type. A magnetic biasing film has a stacked film of a high saturation magnetization magnetic layer and a hard magnetic layer. The high saturation magnetization magnetic layer has saturation magnetization Ms.sup.high which, when saturation magnetization of the free layer is Ms.sup.free and saturation magnetization of the hard magnetic layer is Ms.sup.hard, satisfies at least one of Ms.sup.high .gtoreq.Ms.sup.free or Ms.sup.high .gtoreq.Ms.sup.hard. In a spin valve GMR head of a reversed structure or a dual element type, even when a track width is narrowed, occurrence of Barkhausen noise can be effectively suppressed.

    摘要翻译： 自旋阀GMR元件包括依次堆叠钉扎层，非磁性层和磁化方向根据外部磁场而变化的自由层的自旋阀GMR膜，以及提供偏置磁场的磁偏置膜 到自由层。 自旋阀GMR膜可以是双重元件型。 磁偏置膜具有高饱和磁化磁化层和硬磁性层的叠层膜。 高饱和磁化磁化层具有饱和磁化强度Mshigh，当自由层的饱和磁化强度为Msfree且硬磁层的饱和磁化强度为Mshard时，满足Mshigh> / = Msfree或Mshigh> / = Mshard中的至少一个。 在反转结构或双元件型的自旋阀GMR头中，即使轨道宽度变窄，也能够有效地抑制巴克豪森噪声的发生。

    Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory
    55.
    发明授权
    Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory 有权
    磁阻效应元件，磁头，磁再现装置和磁存储器

    公开(公告)号：US07843669B2

    公开(公告)日：2010-11-30

    申请号：US12366972

    申请日：2009-02-06

    申请人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Masashi Sahashi

    发明人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Masashi Sahashi

    IPC分类号： G11B5/39

    CPC分类号： H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/398 ,  G11B5/3983 ,  G11C11/16 ,  G11C11/161 ,  H01F10/1936 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3268 ,  H01F10/3281 ,  H01F41/303 ,  H01F41/325 ,  H01L27/224 ,  H01L27/228 ,  Y10T428/1121

    摘要： A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of nitride, oxinitride, phosphide, and fluoride. The pair of electrodes are electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film.

    摘要翻译： 磁阻效应元件包括磁阻效应膜和一对电极。 具有第一磁性层的磁阻效应膜，其磁化方向基本上在一个方向上被固定; 其磁化方向响应于外部磁场而变化的第二磁性层; 位于第一和第二磁性层之间的非磁性中间层; 以及设置在所述第一磁性层中，在所述第二磁性层中，在所述第一磁性层和所述非磁性中间层之间的界面处和/或在所述第二磁性层和所述非磁性中间层之间的界面处设置的膜，所述膜具有 厚度不大于3纳米，该膜具有选自氮化物，氮氧化物，磷化物和氟化物中的至少一种。 一对电极电连接到磁阻效应膜，以提供垂直于所述磁阻效应膜的膜平面的感测电流。

    MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD, MAGNETIC REPRODUCING APPARATUS, AND MAGNETIC MEMORY
    57.
    发明申请
    MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD, MAGNETIC REPRODUCING APPARATUS, AND MAGNETIC MEMORY 有权
    磁阻效应元件，磁头，磁力再生装置和磁记忆

    公开(公告)号：US20070081276A1

    公开(公告)日：2007-04-12

    申请号：US11609557

    申请日：2006-12-12

    申请人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Masashi Sahashi

    发明人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Masashi Sahashi

    IPC分类号： G11B5/33 ,  G11B5/127

    CPC分类号： H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/398 ,  G11B5/3983 ,  G11C11/16 ,  G11C11/161 ,  H01F10/1936 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3268 ,  H01F10/3281 ,  H01F41/303 ,  H01F41/325 ,  H01L27/224 ,  H01L27/228 ,  Y10T428/1121

    摘要： A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of nitride, oxinitride, phosphide, and fluoride. The pair of electrodes are electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film.

    摘要翻译： 磁阻效应元件包括磁阻效应膜和一对电极。 具有第一磁性层的磁阻效应膜，其磁化方向基本上在一个方向上被固定; 其磁化方向响应于外部磁场而变化的第二磁性层; 位于第一和第二磁性层之间的非磁性中间层; 以及设置在所述第一磁性层中，在所述第二磁性层中，在所述第一磁性层和所述非磁性中间层之间的界面处和/或在所述第二磁性层和所述非磁性中间层之间的界面处设置的膜，所述膜具有 厚度不大于3纳米，该膜具有选自氮化物，氮氧化物，磷化物和氟化物中的至少一种。 一对电极电连接到磁阻效应膜，以提供垂直于所述磁阻效应膜的膜平面的感测电流。