公开(公告)号：US10075702B2

公开(公告)日：2018-09-11

申请号：US15204185

申请日：2016-07-07

Applicant: STMICROELECTRONICS SA

Inventor： Olivier Pothier ,  Arnaud Bourge

IPC: G06T3/40 ,  H04N13/271 ,  H04N13/02

CPC classification number: H04N13/271 ,  G06T3/40 ,  H04N13/139 ,  H04N2013/0081

Abstract: An electronic device includes a single-photon avalanche diode (SPAD) array and readout circuitry coupled thereto. The readout circuitry generates a depth map having a first resolution, and a signal count map having a second resolution greater than the first resolution. The depth map corresponds to distance observations to an object. The signal count map corresponds to intensity observation sets of the object, with each intensity observation set including intensity observations corresponding to a respective distance observation in the depth map. An upscaling processor is coupled to the readout circuitry to calculate upscaling factors for each intensity observation set so that each distance observation has respective upscaling factors associated therewith. The depth map is then upscaled from the first resolution to the second resolution based on the respective upscaling factors.

公开(公告)号：US10067291B2

公开(公告)日：2018-09-04

申请号：US15499261

申请日：2017-04-27

Applicant: STMicroelectronics SA

Inventor： Cédric Durand ,  Frédéric Gianesello ,  Folly Eli Ayi-Yovo

IPC: G02B6/02 ,  G02B6/30 ,  C03C23/00 ,  B23K26/364 ,  B23K26/402 ,  B23K26/0622 ,  B23K103/00

Abstract: A method of manufacturing a waveguide in a glass plate is disclosed. The glass plate is scanned with a laser beam directed orthogonally to the glass plate to form a trench according to a pattern of the waveguide to be formed. The scanning is performed by pulses of the laser beam having a duration between 2 and 500 femtoseconds. The glass plate with the trench is treated with hydrofluoric acid. After treating the glass plate, the trench is filled with a material having an index different from that of glass, and, after filling the trench, a cladding layer is deposited.

公开(公告)号：US20180246389A1

公开(公告)日：2018-08-30

申请号：US15679691

申请日：2017-08-17

Applicant: STMicroelectronics SA

Inventor： Valerie Danelon ,  Denis Pache ,  Christophe Arricastres

IPC: G02F1/225 ,  G02F1/025 ,  G02B6/293

CPC classification number: G02F1/225 ,  G02B6/29338 ,  G02F1/025 ,  G02F1/2257 ,  G02F2001/212 ,  G02F2203/15

Abstract: A Mach-Zehnder ring modulator includes a first optical path having a first diode and a optical path having a second diode. Each of the first and second diodes operates responsive to a voltage signal by modifying a phase of a light signal. A first optical coupler provides first and second light signals to the first and second optical paths, respectively. A second optical coupler couples outputs from the first and second optical paths. A feedback path is coupled between an output of the second optical coupler and an input of the first optical coupler.

公开(公告)号：US10014337B2

公开(公告)日：2018-07-03

申请号：US15280544

申请日：2016-09-29

Applicant: STMicroelectronics SA ,  STMicroelectronics (Crolles 2) SAS ,  Commissariat A L'Energie Atomique et aux Energies Alternatives

Inventor： Romain Girard Desprolet ,  Michel Marty ,  Salim Boutami ,  Sandrine Lhostis

IPC: H01L21/311 ,  H01L27/146 ,  G02B5/20 ,  G02F1/1335 ,  G02B5/00 ,  B82Y20/00

CPC classification number: H01L27/14625 ,  B82Y20/00 ,  G02B5/008 ,  G02B5/201 ,  G02B5/204 ,  G02B2207/101 ,  G02F1/133509 ,  G02F1/133516 ,  H01L21/311 ,  H01L27/14621 ,  H01L27/14685

Abstract: A spectral filter is manufactured using a process wherein a first rectangular bar is formed within a first layer made of a first material, said first rectangular bar being made of a second material having a different optical index. The process further includes, in a second layer over the first layer, a second rectangular bar made of the second material. The second rectangular bar is positioned in contact with the first rectangular bar. The second layer is also made of the first material.

公开(公告)号：US10014183B2

公开(公告)日：2018-07-03

申请号：US15523742

申请日：2015-11-09

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  STMICROELECTRONICS SA

Inventor： Shay Reboh ,  Laurent Grenouillet ,  Yves Morand

IPC: H01L21/308 ,  H01L21/311 ,  H01L27/12

CPC classification number: H01L21/3086 ,  H01L21/0337 ,  H01L21/31144 ,  H01L27/1203

Abstract: A method for producing at least one pattern in a layer resting on a substrate, including: a) making amorphous at least one first block of an upper layer of crystalline material resting on a first amorphous supporting layer, while the crystalline structure of a second block of the upper layer that adjoins and is juxtaposed with the first block is preserved; b) partially recrystallizing the first block by using at least one side surface of the second block that is in contact with the first block as an area for the start of a recrystallization front, the partial recrystallization being carried out to preserve a region of amorphous material in the first block; c) selectively etching the amorphous material of the upper layer with respect to the crystalline material of the upper layer to form at least one first pattern in the upper layer.

公开(公告)号：US09997550B2

公开(公告)日：2018-06-12

申请号：US14627038

申请日：2015-02-20

Applicant: STMicroelectronics SA

Inventor： Bruno Rauber

IPC: H01L27/14 ,  H01L31/101 ,  H01L31/11 ,  H01L27/144

CPC classification number: H01L27/1446 ,  H01L31/101 ,  H01L31/11

Abstract: A photodetector is formed in a silicon-on-insulator (SOI) type semiconductor layer. The photodetector includes a first region and a second region of a first conductivity type separated from each other by a central region of a second conductivity type so as to define a phototransistor. A transverse surface of the semiconductor layer is configured to receive an illumination. The transverse surface extends orthogonally to an upper surface of the central region.

公开(公告)号：US09971173B2

公开(公告)日：2018-05-15

申请号：US15251236

申请日：2016-08-30

Applicant: STMICROELECTRONICS SA

Inventor： Jean-Robert Manouvrier

IPC: G02F1/035 ,  G02F1/295 ,  G02B6/12 ,  G02F1/025 ,  G02F1/01 ,  G02F1/225

CPC classification number: G02F1/025 ,  G02F1/0123 ,  G02F1/225 ,  G02F1/2255

Abstract: A semiconductor electro-optical phase shifter may include a substrate, an optical waveguide segment (12) formed on the substrate, and first and second zones of opposite conductivity types configured to form a first bipolar junction perpendicular to the substrate. The phase shifter may also include a dynamic control structure configured to reverse bias the first junction and a static control structure configured to direct a quiescent current in the second zone, parallel to the first junction.

公开(公告)号：US20180130788A1

公开(公告)日：2018-05-10

申请号：US15862924

申请日：2018-01-05

Applicant: STMicroelectronics SA

Inventor： Johan Bourgeat ,  Jean Jimenez

IPC: H01L27/02 ,  H01L29/10 ,  H01L29/74 ,  H01L29/744

CPC classification number: H01L27/0251 ,  H01L27/0262 ,  H01L29/1095 ,  H01L29/7436 ,  H01L29/744

Abstract: An electronic device is formed by a sequence of at least two thyristors coupled in series in a same conduction direction. Each thyristor has a gate of a first conductivity type. The gates of the first conductivity type for the thyristors in the sequence are coupled together in order to form a single control gate.

公开(公告)号：US09947650B1

公开(公告)日：2018-04-17

申请号：US15497993

申请日：2017-04-26

Applicant: STMicroelectronics SA

Inventor： Philippe Galy ,  Sotirios Athanasiou

IPC: H01L27/02 ,  H01L27/12 ,  H01L29/45 ,  H01L27/06

CPC classification number: H01L27/0266 ,  H01L27/0629 ,  H01L27/1203 ,  H01L29/456

Abstract: An ESD protection device includes a MOS transistor connected between a first terminal and a second terminal and having a gate region, source/drain region and a well region electrically coupled by a resistive-capacitive circuit configured to control turn on of the MOS transistor in response to an ESD event. The resistive-capacitive circuit has a common part with at least one of the source, gate or drain regions of the MOS transistor and includes a capacitive element and a resistive element. A first electrode of the capacitive element is formed by the resistive element and a second electrode of the capacitive element is formed by at least a portion of a semiconductor film within which the source/drain region is formed.

公开(公告)号：US20180097481A1

公开(公告)日：2018-04-05

申请号：US15833039

申请日：2017-12-06

Applicant: STMicroelectronics SA

Inventor： Raphael Paulin

IPC: H03F1/56 ,  H04B5/00 ,  H03F3/195

CPC classification number: H03F1/565 ,  H03F1/086 ,  H03F1/223 ,  H03F3/195 ,  H03F2200/108 ,  H03F2200/181 ,  H03F2200/216 ,  H03F2200/294 ,  H03F2200/297 ,  H03F2200/301 ,  H03F2200/321 ,  H03F2200/336 ,  H03F2200/387 ,  H03F2200/391 ,  H03F2200/451 ,  H03F2200/48 ,  H03F2200/489 ,  H03F2200/492 ,  H03F2200/75 ,  H04B5/0081

Abstract: A low-noise amplifier device includes an inductive input element, an amplifier circuit, an inductive output element and an inductive degeneration element. The amplifier device is formed in and on a semiconductor substrate. The semiconductor substrate supports metallization levels of a back end of line structure. The metal lines of the inductive input element, inductive output element and inductive degeneration element are formed within one or more of the metallization levels. The inductive input element has a spiral shape and the an amplifier circuit, an inductive output element and an inductive degeneration element are located within the spiral shape.