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    Semiconductor laser device and manufacturing method therefor
    51.
    发明申请
    Semiconductor laser device and manufacturing method therefor 审中-公开
    半导体激光器件及其制造方法

    公开(公告)号：US20060222026A1

    公开(公告)日：2006-10-05

    申请号：US11391370

    申请日：2006-03-29

    Applicant: Kazuhiko Wada

    Inventor： Kazuhiko Wada

    IPC: H01S5/00 ,  H01S3/04

    CPC classification number: B82Y20/00 ,  H01S5/221 ,  H01S5/2231 ,  H01S5/3211 ,  H01S5/3432 ,  H01S2304/04

    Abstract: On an n-type GaAs substrate 19 are formed an n-type GaAs buffer layer 20, a non-doped AlxGa1-xAs light guide evaluation layer 21, an n-type AlxGa1-xAs first clad layer 22, an n-type AlxGa1-xAs second clad layer 23, a non-doped AlxGa1-xAs first light guide layer 24, a non-doped AlxGa1-xAs quantum well active layer 25, a non-doped AlxGa1-xAs second light guide layer 26, a p-type AlxGa1-xAs first clad layer 27, a p-type GaAs etching stop layer 28, a p-type AlxGa1-xAs second clad layer 29 and a p-type GaAs cap layer 30. The Al crystal mixing ratio of the light guide evaluation layer 21 is equal to that of the first and second light guide layers 24, 26. The semiconductor laser device allows the control of layer thickness and material composition of the light guide layers to be fulfilled with simplicity and high precision.

    Abstract translation: 在n型GaAs衬底19上形成n型GaAs缓冲层20，非掺杂Al x Ga 1-x As As光导层评估层21， n型Al x Ga 1-x N As第一包层22，n型Al x Ga 1-x 作为第二覆层23，未掺杂的Al x Ga 1-x As As第一导光层24，未掺杂的Al x 作为量子阱有源层25，作为第二光导体的非掺杂Al x Ga 1-x N 2 层26，p型Al x Ga 1-x N As第一包层27，p型GaAs蚀刻停止层28，p型Al

    Semiconductor laser light emitting device
    53.
    发明申请
    Semiconductor laser light emitting device 失效
    半导体激光发光装置

    公开(公告)号：US20050147144A1

    公开(公告)日：2005-07-07

    申请号：US11074273

    申请日：2005-03-07

    Applicant: Hiroshi Yoshida ,  Misuzu Abe ,  Maho Ohara ,  Takashi Yamaguchi ,  Hiroshi Nakajima

    Inventor： Hiroshi Yoshida ,  Misuzu Abe ,  Maho Ohara ,  Takashi Yamaguchi ,  Hiroshi Nakajima

    IPC: H01S5/227 ,  H01S5/065 ,  H01S5/22 ,  H01S5/223 ,  H01S5/30 ,  H01S5/323 ,  H01S5/343 ,  H01S5/00

    CPC classification number: H01S5/32341 ,  H01S5/221 ,  H01S5/2218 ,  H01S5/2231

    Abstract: Disclosed is a semiconductor laser light emitting device including: a stacked film composed of a stack of group III nitride semiconductor films each containing at least one kind selected from aluminum, gallium, indium, and boron; wherein an upper portion of the stacked film is formed into a ridge-like stripe, to form a current injection region; a current non-injection region formed on both sides of the ridge-like stripe; and at least part of the current non-injection region is made from a material expressed by a chemical formula AlxGa1-xN (0≦x≦1.0). In this device, the component ratio “x” of Al is specified at a value in a range of 0.3≦x≦1.0, so that the semiconductor laser light emitting device is configured as an index guide type semiconductor laser light emitting device; the component ratio “x” of Al is specified at a value in a range of 0.15

    Abstract translation: 公开了一种半导体激光发光装置，其包括：由包含选自铝，镓，铟和硼中的至少一种的III族氮化物半导体膜的堆叠构成的层叠膜; 其中所述层叠膜的上部形成为脊状条纹，以形成电流注入区域; 形成在脊状条纹的两侧的电流非注入区域; 并且当前非注入区域的至少一部分由化学式Al x 1 Ga x-x N表示的材料制成（0≤x≤1.0 ）。 在该器件中，Al的分量比“x”被指定为0.3 <= x <= 1.0的范围内的值，使得半导体激光发光器件被配置为引导型半导体激光发光器件; Al的分量比“x”被规定在0.15

    Dopant diffusion blocking for optoelectronic devices using InAIAs or InGaAIAs
    54.
    发明申请
    Dopant diffusion blocking for optoelectronic devices using InAIAs or InGaAIAs 审中-公开
    使用InAAs或InGaAAs的光电器件的掺杂扩散阻挡

    公开(公告)号：US20040213313A1

    公开(公告)日：2004-10-28

    申请号：US10848353

    申请日：2004-05-19

    Inventor： Yuliya A. Akulova ,  Sung-nee G. Chu ,  Michael Geva ,  Mark S. Hybertsen ,  Charles W. Lentz ,  Abdallah Ougazzaden

    IPC: H01S005/00

    CPC classification number: H01S5/227 ,  G02F1/025 ,  H01S5/221 ,  H01S5/2213 ,  H01S5/2226 ,  H01S5/3072 ,  H01S5/50

    Abstract: A method for decreasing the diffusion of dopant atoms in the active region, as well as the interdiffusion of different types of dopant atoms among adjacent doped regions, of optoelectronic devices is disclosed. The method of the present invention employs a plurality of InAlAs and/or InGaAlAs layers to avoid the direct contact between the dopant atoms and the active region, and between the dopant atoms in adjacent blocking structures of optoelectronic devices. A semi-insulating buried ridge structure, as well as a ridge structure, in which the interdiffusion of different types of dopant atoms is suppressed are also disclosed.

    Abstract translation: 公开了一种用于减少有源区中的掺杂剂原子的扩散以及相邻掺杂区中不同类型的掺杂剂原子在光电子器件中的相互扩散的方法。 本发明的方法采用多个InAlAs和/或InGaAlAs层以避免掺杂剂原子与有源区之间以及光电子器件的相邻阻挡结构中的掺杂剂原子之间的直接接触。 还公开了抑制不同类型的掺杂剂原子的相互扩散的半绝缘掩埋隆起结构以及脊结构。

    Semiconductor laser
    56.
    发明授权
    Semiconductor laser 失效
    半导体激光器

    公开(公告)号：US06618416B1

    公开(公告)日：2003-09-09

    申请号：US09807003

    申请日：2001-06-22

    Applicant: Mototaka Taneya ,  Kunihiro Takatani ,  Susumu Ohmi

    Inventor： Mototaka Taneya ,  Kunihiro Takatani ,  Susumu Ohmi

    IPC: H01S500

    CPC classification number: B82Y20/00 ,  H01S5/0021 ,  H01S5/2004 ,  H01S5/2086 ,  H01S5/2205 ,  H01S5/2206 ,  H01S5/221 ,  H01S5/2218 ,  H01S5/222 ,  H01S5/2231 ,  H01S5/3213 ,  H01S5/3216 ,  H01S5/32325 ,  H01S5/32341 ,  H01S5/34333

    Abstract: An InGaAlN-based semiconductor laser device, comprising a first layer of a first conductivity type, an active layer having a smaller forbidden band than that of the first layer, and a second layer of a second conductivity type having a larger forbidden band than that of the active layer. The second layer includes a flat region and a stripe-shaped projecting structure. A stripe-shaped optical waveguide forming layer of the second conductivity type having a larger refractive index than that of the second layer is formed on the stripe-shaped projecting structure. A current-constricting layer of the first conductivity type or of a high resistance is formed for covering a top surface of the flat region of the second layer, a side surface of the projecting structure of the second layer, and a side surface of the optical waveguide forming layer. A difference between a thermal expansion coefficient of the current-constricting layer and a thermal expansion coefficient of the second layer is in the range of −4×10−9/° C. to +4×10−9/° C.

    Abstract translation: 1.一种InGaAlN系半导体激光器件，其特征在于，具有第一导电型的第一层，比第一层的禁带宽的有源层，以及具有比第一导电类型更大的禁带宽度的第二导电类型的第二层， 活动层。 第二层包括平坦区域和条形突起结构。 在条状突起结构上形成具有比第二层折射率大的第二导电类型的条形光波导形成层。 形成第一导电型或高电阻的电流限制层，用于覆盖第二层的平坦区域的顶表面，第二层的突出结构的侧表面和光学器件的侧表面 波导形成层。 电流限制层的热膨胀系数与第二层的热膨胀系数之间的差在-4×10 -9 /℃至+ 4×10 -9 /℃的范围内。

    Laser diode and semiconductor light-emitting device producing visible-wavelength radiation
    57.
    发明授权
    Laser diode and semiconductor light-emitting device producing visible-wavelength radiation 失效
    产生可见光波长的激光二极管和半导体发光器件

    公开(公告)号：US06614821B1

    公开(公告)日：2003-09-02

    申请号：US09633230

    申请日：2000-08-04

    Applicant: Naoto Jikutani ,  Takashi Takahashi ,  Shunichi Sato

    Inventor： Naoto Jikutani ,  Takashi Takahashi ,  Shunichi Sato

    IPC: H01S500

    CPC classification number: H01S5/2202 ,  B82Y20/00 ,  H01S5/22 ,  H01S5/2206 ,  H01S5/2209 ,  H01S5/221 ,  H01S5/2231 ,  H01S5/3201 ,  H01S5/3434

    Abstract: A laser diode includes a substrate having a lattice constant of GaAs or between GaAs and GaP, a first cladding layer of AlGaInP formed on the substrate, an active layer of GaInAsP formed on the first cladding layer, an etching stopper layer of GaInP formed on the active layer, a pair of current-blocking regions of AlGaInP formed on the etching stopper layer so as to define a strip region therebetween, an optical waveguide layer of AlGaInP formed on the pair of current-blocking regions so as to cover the etching stopper layer in the stripe region, and a second cladding layer of AlGaInP formed on the optical waveguide layer, wherein the current-blocking regions having an Al content substantially identical with an Al content of the second cladding layer.

    Abstract translation: 激光二极管包括具有GaAs晶格常数或GaAs和GaP之间的基板，在基板上形成的AlGaInP的第一包层，形成在第一包层上的GaInAsP的有源层，形成在第一包层上的GaInP的蚀刻停止层 有源层，形成在蚀刻阻挡层上的一对电流阻挡区域，以便在其间限定条带区域，形成在一对电流阻挡区上的覆盖蚀刻阻挡层的AlGaInP光波导层 以及形成在光波导层上的AlGaInP的第二包覆层，其中，所述电流阻挡区域的Al含量基本上与第二包层的Al含量相同。

    Semiconductor laser producing method
    58.
    发明申请
    Semiconductor laser producing method 有权
    半导体激光产生方法

    公开(公告)号：US20020016014A1

    公开(公告)日：2002-02-07

    申请号：US09884905

    申请日：2001-06-21

    Inventor： Takashi Kimura

    IPC: H01L021/00

    CPC classification number: H01S5/2231 ,  H01S5/221

    Abstract: A ridge-type semiconductor laser producing method. This method includes the steps of successively laminating, on a compound semiconductor substrate, a lower clad layer, an active layer, and an upper first clad layer; forming, on the upper first clad layer, an upper second clad layer in the form of a ridge; and selectively growing a light confining layer at each side of the upper second clad layer in the form of a ridge. At the time of the selective growth of the light confining layers, there is used a III-group element feeding raw material including a III-group element compound having a methyl group.

    Abstract translation: 脊型半导体激光器的制造方法。 该方法包括在化合物半导体衬底上依次层叠下包层，有源层和上第一包层的步骤; 在上第一包层上形成脊形的上第二包覆层; 并且以脊的形式选择性地生长在上第二包覆层的每一侧的光限制层。 在光限制层的选择性生长时，使用含有具有甲基的III族元素化合物的原料的III族元素。

    Semiconductor laser device and method of designing the same
    60.
    发明授权
    Semiconductor laser device and method of designing the same 失效
    半导体激光器件及其设计方法

    公开(公告)号：US5960019A

    公开(公告)日：1999-09-28

    申请号：US828034

    申请日：1997-03-27

    Applicant: Nobuhiko Hayashi ,  Daisuke Ide ,  Akira Ibaraki

    Inventor： Nobuhiko Hayashi ,  Daisuke Ide ,  Akira Ibaraki

    IPC: H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S5/343 ,  H01S3/19

    CPC classification number: B82Y20/00 ,  H01S5/2231 ,  H01S5/204 ,  H01S5/2206 ,  H01S5/221 ,  H01S5/222 ,  H01S5/32316 ,  H01S5/3432

    Abstract: A semiconductor laser device comprises a cladding layer of a first conductivity type, an active layer, a cladding layer of a second conductivity type, and a current blocking layer having a stripe-shaped opening having a predetermined width W for restricting a current path and forming the current path, and having a larger band gap than that of the cladding layer of the second conductivity type and having a smaller refractive index than that of the cladding layer of the second conductivity type. A difference .DELTA.n between effective refractive indexes in a region, which corresponds to the opening, in the active layer and an effective refractive index in a region, which corresponds to both sides of the opening, in the active layer and the width W (.mu.m) of the opening are so set as to satisfy a predetermined relationship. The difference .DELTA.n between the effective refractive indexes is set by selecting the A1 composition ratio of the current blocking layer and the thickness of the cladding layer of the second conductivity type on the both sides of the opening.

    Abstract translation: 半导体激光装置包括第一导电类型的包覆层，有源层，第二导电类型的包覆层和具有用于限制电流路径的预定宽度W的条形开口的电流阻挡层，并形成 电流路径，并且具有比第二导电类型的包层更大的带隙，并且具有比第二导电类型的包覆层的折射率更小的折射率。 与有源层中的开口对应的区域中的有效折射率与对应于开口的两侧的区域中的有效折射率在有效层中的有效折射率和宽度W（mu m）设定为满足规定的关系。 通过选择开口两侧的电流阻挡层的A1组成比和第二导电类型的包覆层的厚度来设定有效折射率之间的差ΔTAn。

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