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    Semiconductor laser
    1.
    发明授权
    Semiconductor laser 失效
    半导体激光器

    公开(公告)号：US06274891B1

    公开(公告)日：2001-08-14

    申请号：US09392459

    申请日：1999-09-09

    申请人： Haruo Tanaka ,  Yukio Shakuda

    发明人： Haruo Tanaka ,  Yukio Shakuda

    IPC分类号： H01L3300

    CPC分类号： H01S5/32325 ,  H01S5/026 ,  H01S5/0267 ,  H01S5/042 ,  H01S5/0654 ,  H01S5/0683 ,  H01S5/1064 ,  H01S5/1085 ,  H01S5/18 ,  H01S5/2205 ,  H01S5/2206 ,  H01S5/221 ,  H01S5/2219 ,  H01S5/2231 ,  H01S5/32341

    摘要： In a semiconductor laser which uses a semiconductor of GaN type compound, an optimism material is used for a current blocking layer, so that it is made possible to obtain a semiconductor laser that satisfies a gain guiding structure of high light emitting efficiency or a refractive index guiding structure or both, thereby facilitating control of the noise of oscillated light (reduction of noise), control of the spread of light in lateral direction, and control of the longitudinal mode.

    摘要翻译： 在使用GaN型化合物的半导体的半导体激光器中，使用乐观材料作为电流阻挡层，从而可以获得满足高发光效率或折射率的增益导引结构的半导体激光器 引导结构或两者，从而有助于控制振荡光的噪声（降低噪声），控制光在横向方向的扩展以及纵向模式的控制。

    Semiconductor memory device
    2.
    发明授权
    Semiconductor memory device 失效
    半导体存储器件

    公开(公告)号：US5760439A

    公开(公告)日：1998-06-02

    申请号：US806629

    申请日：1997-02-26

    申请人： Haruo Tanaka ,  Yukio Shakuda

    发明人： Haruo Tanaka ,  Yukio Shakuda

    IPC分类号： H01L21/8247 ,  G11C16/18 ,  H01L27/115 ,  H01L27/15 ,  H01L29/788 ,  H01L29/792 ,  H01L31/167 ,  H01L33/32 ,  H01L33/56

    CPC分类号： G11C16/18 ,  H01L31/167 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247

    摘要： A semiconductor memory device in which a stored information can be simply erased only by an electric signal so as to be rewritten is provided. The semiconductor memory device includes: (a) a semiconductor chip having an array of memory cells, stored information in the memory cells being erasable by light irradiation; (b) a light emitting element irradiating a light into the memory cells portion of the semiconductor chip; and (c) a package in which the semiconductor chip and the light emitting element are encapsulated with a resin in one body.

    摘要翻译： 提供了一种半导体存储器件，其中可以仅通过电信号简单地擦除存储的信息以便被重写。 半导体存储器件包括：（a）具有存储单元阵列的半导体芯片，存储单元中存储的信息可通过光照射而被擦除; （b）向所述半导体芯片的存储单元部分照射光的发光元件; 和（c）半导体芯片和发光元件用树脂封装在一体内的封装。

    Semiconductor memory device mounted with a light emitting device
    3.
    发明授权
    Semiconductor memory device mounted with a light emitting device 失效
    安装有发光器件的半导体存储器件

    公开(公告)号：US6121656A

    公开(公告)日：2000-09-19

    申请号：US964828

    申请日：1997-11-05

    申请人： Haruo Tanaka ,  Yukio Shakuda

    发明人： Haruo Tanaka ,  Yukio Shakuda

    IPC分类号： H01L21/8247 ,  G11C16/18 ,  H01L27/115 ,  H01L27/15 ,  H01L29/788 ,  H01L29/792 ,  H01L31/167 ,  H01L33/32 ,  H01L33/56 ,  H07L29/788

    CPC分类号： G11C16/18 ,  H01L31/167 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247

    摘要： A semiconductor memory device in which a stored information can be simply erased only by an electric signal so as to be rewritten is provided. The semiconductor memory device includes (a) a semiconductor chip having an array of memory cells, stored information in the memory cells being erasable by light irradiation; (b) a light emitting element irradiating a light into the memory cells portion of the semiconductor chip; and (c) a package in which the semiconductor chip and the light emitting element are encapsulated with a resin in one body.

    摘要翻译： 提供了一种半导体存储器件，其中可以仅通过电信号简单地擦除存储的信息以便被重写。 半导体存储器件包括（a）具有存储单元阵列的半导体芯片，存储单元中存储的信息可通过光照射而被擦除; （b）向所述半导体芯片的存储单元部分照射光的发光元件; 和（c）半导体芯片和发光元件用树脂封装在一体内的封装。

    Method and equipment for manufacturing semiconductor device
    6.
    发明授权
    Method and equipment for manufacturing semiconductor device 失效
    制造半导体器件的方法和设备

    公开(公告)号：US5940684A

    公开(公告)日：1999-08-17

    申请号：US859704

    申请日：1997-05-21

    申请人： Yukio Shakuda ,  Haruo Tanaka

    发明人： Yukio Shakuda ,  Haruo Tanaka

    IPC分类号： H01L21/00 ,  H01L21/02 ,  H01L21/203 ,  H01L21/205 ,  H01S5/00 ,  H01S5/323

    CPC分类号： H01L21/6719 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/67207 ,  H01L33/007

    摘要： By (a) performing a first treatment process to a substrate in a first apparatus, (b) moving the substrate having undergone the first treatment process into an airtight passage communicating with the first apparatus and shut off from outside and thereafter, shutting off the communication between the passage and the first apparatus, (c) setting the passage to communicate with a second apparatus to move the substrate into the second apparatus, and (d) performing a second treatment process in the second apparatus, the treatment processes are performed in treatment apparatuses suitable therefor without the substrate being exposed to the outside air. As a result, the time between the treatment processes is reduced and the availability ratio of the expensive equipment is improved.

    摘要翻译： 通过（a）在第一装置中对基板执行第一处理处理，（b）将经过第一处理处理的基板移动到与第一装置通信的气密通道中，并且从外部切断，然后关闭通信 在通道和第一设备之间，（c）设置通道与第二设备连通以将基板移动到第二设备中，以及（d）在第二设备中执行第二处理过程，处理过程在处理 适合的设备，而不会使基板暴露于外部空气。 结果，减少了处理过程之间的时间并提高了昂贵设备的可利用率。

    Semiconductor light-emitting device
    8.
    发明授权
    Semiconductor light-emitting device 有权
    半导体发光装置

    公开(公告)号：US08411718B2

    公开(公告)日：2013-04-02

    申请号：US12809233

    申请日：2008-12-19

    申请人： Yukio Shakuda

    发明人： Yukio Shakuda

    IPC分类号： H01S5/323 ,  H01S5/22

    CPC分类号： H01S5/32341 ,  H01S5/0425 ,  H01S5/16 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/3214

    摘要： The present invention provides a nitride semiconductor light-emitting device capable of preventing shortening of the device lifetime due to increase in the driving voltage of the device and internal heat generation, and also providing uniform laser characteristics, even if the device has a ridge stripe structure. On a GaN substrate 1, an n-type GaN layer 2, an n-type AlGaN layer 3, an active layer 4, a p-type AlGan layer 5 and a p-type GaN layer 6 are laminated sequentially. On the p-type GaN layer 6, an insulating film 7 and a transparent electrode 8 are formed. A portion of the transparent electrode 8 is formed in contact with the p-type GaN layer 6. A ridge stripe portion D to form a waveguide is configured of a transparent film 9. A region, where the transparent electrode 8 and the p-type GaN layer 6 are in contact with each other, serves as a stripe-shaped current injection region.

    摘要翻译： 本发明提供了一种氮化物半导体发光器件，其能够防止由于器件的驱动电压的增加和内部发热引起的器件寿命缩短，并且即使器件具有脊状条纹结构也能提供均匀的激光特性 。 在GaN衬底1上依次层叠n型GaN层2，n型AlGaN层3，有源层4，p型AlGan层5和p型GaN层6。 在p型GaN层6上形成绝缘膜7和透明电极8。 透明电极8的一部分形成为与p型GaN层6接触。形成波导的脊条部分D由透明膜9构成。透明电极8和p型 GaN层6彼此接触，用作条形电流注入区域。

    Semiconductor light emitting element and method for manufacturing same
    9.
    发明授权
    Semiconductor light emitting element and method for manufacturing same 有权
    半导体发光元件及其制造方法

    公开(公告)号：US08101963B2

    公开(公告)日：2012-01-24

    申请号：US12307193

    申请日：2007-07-03

    申请人： Yukio Shakuda

    发明人： Yukio Shakuda

    IPC分类号： H01L33/00 ,  H01L31/0224

    CPC分类号： H01L33/62 ,  H01L24/24 ,  H01L24/82 ,  H01L25/0753 ,  H01L33/32 ,  H01L33/40 ,  H01L33/44 ,  H01L2224/24051 ,  H01L2224/24137 ,  H01L2224/24226 ,  H01L2224/24998 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/82007 ,  H01L2224/92244 ,  H01L2924/01012 ,  H01L2924/01078 ,  H01L2924/01079

    摘要： A semiconductor light emitter (A) includes an n-type semiconductor layer (2), a p-type semiconductor layer (4), and an active layer (3) between these two layers (2, 4). The light emitter (A) further includes an n-side electrode (5) on the n-type layer (2) and a p-side electrode (6) on the p-type layer (4). An insulating layer (7) covers the n-type and p-type layers (2),(4), while also partially covering the n-side and p-side electrodes (5),(6), leaving part of the electrodes (5, 6) exposed. The n-side electrode (5) has a first Al layer (51) formed on the n-type layer (2) and a second Ni, W, Zr or Pt layer (52) formed on the first layer (51). The p-side electrode (6) has a first Au layer (61) formed on the p-type layer (4), and a second Ni, W, Zr or Pt layer (62) formed on the first layer (61).

    摘要翻译： 半导体发光体（A）包括在这两层（2,4）之间的n型半导体层（2），p型半导体层（4）和有源层（3）。 光发射体（A）还包括在n型层（2）上的n侧电极（5）和p型层（4）上的p侧电极（6）。 绝缘层（7）覆盖n型和p型层（2），（4），同时也部分地覆盖n侧和p侧电极（5），（6），留下部分电极 （5,6）暴露。 n侧电极（5）具有形成在n型层（2）上的第一Al层（51）和形成在第一层（51）上的第二Ni，W，Zr或Pt层（52）。 p侧电极（6）具有形成在p型层（4）上的第一Au层（61）和形成在第一层（61）上的第二Ni，W，Zr或Pt层（62）。

    METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR AND NITRIDE SEMICONDUCTOR ELEMENT
    10.
    发明申请
    METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR AND NITRIDE SEMICONDUCTOR ELEMENT 有权
    制备氮化物半导体和氮化物半导体元件的方法

    公开(公告)号：US20090269867A1

    公开(公告)日：2009-10-29

    申请号：US12310372

    申请日：2007-08-23

    申请人： Yukio Shakuda

    发明人： Yukio Shakuda

    IPC分类号： H01L33/00 ,  H01L21/20

    CPC分类号： C30B25/14 ,  C30B25/183 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/10 ,  H01L33/12

    摘要： The present invention provides a method of manufacturing a nitride semiconductor capable of improving the crystallinity and the surface state of the nitride semiconductor crystal formed on top of a high-temperature AlN buffer layer. An AlN buffer layer is formed on top of a growth substrate, and then nitride semiconductor crystals are grown on top of the AlN buffer layer. In a stage of manufacturing the nitride semiconductor, the crystal of the AlN buffer layer is grown at a high temperature of 900° C. or higher. In addition, an Al-source material of the AlN buffer layer is started to be supplied first to a reaction chamber and continues to be supplied without interruption, and then a N-source material is supplied intermittently.

    摘要翻译： 本发明提供了一种能够改善在高温AlN缓冲层顶部形成的氮化物半导体晶体的结晶度和表面状态的氮化物半导体的制造方法。 在生长衬底的顶部上形成AlN缓冲层，然后在AlN缓冲层的顶部生长氮化物半导体晶体。 在制造氮化物半导体的阶段，AlN缓冲层的晶体在900℃以上的高温下生长。 此外，开始将AlN缓冲层的Al源材料首先供给到反应室，并且不间断地供给，然后间歇地供给N源材料。