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公开(公告)号：US20180339315A1
公开(公告)日：2018-11-29
申请号：US15975002
申请日：2018-05-09
发明人： Joseph T. Lutz , Heinz Schneider , Amit K. Gautam
摘要： A half round dedusting apparatus for removes dust and debris from particulate material passing through the dedusting apparatus. The configuration of the dedusting apparatus includes a half round cylindrical housing in which is mounted a partial cone wash deck having a reverse partial cone deflector that is vertically moveable to vary the flow rate of particulate material passing over the wash deck. The product inlet port is preferably circular and directs contaminant-laden particulate material inside the deflector to pass over the surface of the wash deck. The housing has a greater diameter than the maximum diameter of the wash deck to establish a Venturi zone around the circumference of the wash deck. The wash deck and deflector are detachably mounted within the housing to allow removal thereof for ease of cleaning the wash deck and also the interior of the housing.
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公开(公告)号：US20180304319A1
公开(公告)日：2018-10-25
申请号：US16022258
申请日：2018-06-28
IPC分类号： B08B9/032 , F16L55/38 , F16L1/16 , B08B9/027 , B08B9/055 , E21B31/12 , E21B43/01 , E21B43/12 , B08B1/00 , B08B9/04 , B08B3/00 , B08B5/00 , B08B9/00 , B08B3/04
CPC分类号： B08B9/0321 , B08B1/00 , B08B1/005 , B08B3/00 , B08B3/04 , B08B5/00 , B08B9/00 , B08B9/027 , B08B9/032 , B08B9/04 , B08B9/055 , B08B9/0553 , B08B9/0555 , E21B31/12 , E21B43/01 , E21B43/12 , F16L1/166 , F16L55/38 , Y10T137/8593 , Y10T137/85978
摘要： In one aspect, the present invention relates to a method for displacing fluid from a pipe. The method includes engaging a fluid-displacement system with the pipe. A displacement agent is pumped into the pipe via the fluid-displacement system. Fluid present within the pipe is displaced by the displacement agent. The pipe is manipulated in a desired manner.
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公开(公告)号：US20180247801A1
公开(公告)日：2018-08-30
申请号：US15804273
申请日：2017-11-06
IPC分类号： H01J37/36 , H01L21/265 , C23C14/14 , B08B7/00 , B08B7/04 , B08B5/00 , H01J37/317 , C23C14/48
CPC分类号： H01J37/36 , C23C14/14 , C23C14/48 , H01J37/3171 , H01J37/32862 , H01J2237/022
摘要： A method is presented for cleaning an ion implanter during operation of the ion implanter. The method includes generating a gallium (III) iodide (GaI3) vapor from a GaI3 source running concurrently with a hydrogen-containing gaseous plasma to cause a reaction with at least iodine (I) residue deposits, selectively filtering ions from the GaI3 vapor and the hydrogen-containing gaseous plasms to create a Ga ion beam, and directing the Ga ion beam onto a semiconductor substrate for Ga implantation. After completion of the Ga implantation, an argon (Ar) based ion beam is run through the ion implanter for post-cleaning of the ion implanter.
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公开(公告)号：US20180247800A1
公开(公告)日：2018-08-30
申请号：US15445372
申请日：2017-02-28
IPC分类号： H01J37/36 , H01L21/265 , H01J37/317 , B08B5/00 , B08B7/04 , B08B7/00 , C23C14/48 , C23C14/14
CPC分类号： H01J37/36 , C23C14/14 , C23C14/48 , H01J37/3171 , H01J37/32862 , H01J2237/022
摘要： A method is presented for cleaning an ion implanter during operation of the ion implanter. The method includes generating a gallium (III) iodide (GaI3) vapor from a GaI3 source running concurrently with a hydrogen-containing gaseous plasma to cause a reaction with at least iodine (I) residue deposits, selectively filtering ions from the GaI3 vapor and the hydrogen-containing gaseous plasms to create a Ga ion beam, and directing the Ga ion beam onto a semiconductor substrate for Ga implantation. After completion of the Ga implantation, an argon (Ar) based ion beam is run through the ion implanter for post-cleaning of the ion implanter.
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公开(公告)号：US20180138064A1
公开(公告)日：2018-05-17
申请号：US15872335
申请日：2018-01-16
IPC分类号： H01L21/673 , H01L21/677 , B08B9/00 , B08B5/02 , B08B5/00
CPC分类号： H01L21/67389 , B08B5/00 , B08B5/02 , B08B9/00 , H01L21/67769 , H01L21/67775
摘要： A wafer carrier purge apparatus, an automated mechanical handling system, and a method of handling a wafer carrier during integrated circuit fabrication are provided. The wafer carrier purge apparatus includes a purge plate adapted for insertion into a carrier storage position. The purge plate includes a gas port and a gas nozzle in fluid communication with the gas port. The gas port receives a gas flow. The gas nozzle is adapted to contact an inlet port of a wafer carrier. The purge plate further includes a vacuum port and a vacuum nozzle in fluid communication with the vacuum port, spaced from the gas nozzle. The vacuum nozzle is adapted to capture gas that escapes from the wafer carrier through an outlet port of the wafer carrier. The purge plate is separate and removable from the carrier storage position.
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公开(公告)号：US20180114679A1
公开(公告)日：2018-04-26
申请号：US15718087
申请日：2017-09-28
CPC分类号： H01J37/32862 , B08B5/00 , B08B7/0035 , B08B9/00 , B08B9/08 , C23C16/24 , C23C16/4404 , C23C16/4405 , C23C16/4408 , C23C16/50 , H01J37/3288
摘要： Implementations of the present disclosure provide methods for treating a processing chamber. In one implementation, the method includes purging a 300 mm substrate processing chamber, without the presence of a substrate, by flowing a purging gas into the substrate processing chamber at a flow rate of about 0.14 sccm/mm2 to about 0.33 sccm/mm2 and a chamber pressure of about 1 Torr to about 30 Torr, with a throttle valve of a vacuum pump system of the substrate processing chamber in a fully opened position, wherein the purging gas is chemically reactive with deposition residue on exposed surfaces of the substrate processing chamber.
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公开(公告)号：US09925569B2
公开(公告)日：2018-03-27
申请号：US14010025
申请日：2013-08-26
发明人： Zhiyuan Ye
CPC分类号： B08B7/005 , C11D7/02 , C11D7/22 , C11D11/0041 , C11D11/007 , C23C16/4405 , H01J37/32522 , H01J37/32816 , H01J37/32853 , H01J37/32862
摘要： Methods for conditioning interior surfaces of a process chamber are provided herein. In one embodiment a method of conditioning interior surfaces of a process chamber is provided. The method comprises maintaining a process chamber at a first pressure and at a first temperature of less than about 800 degrees Celsius, providing a process gas to the process chamber at the first pressure and the first temperature, wherein the process gas comprises chlorine (Cl2) and high IR absorption gas, and exposing the process gas to radiant energy to remove residue disposed on interior surfaces of the process chamber.
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58.发明申请公开(公告)号：US20180044794A1
公开(公告)日：2018-02-15
申请号：US15672901
申请日：2017-08-09
CPC分类号： C23C16/56 , B08B5/00 , B08B9/08 , C23C16/345 , C23C16/4405 , C23C16/45546 , C23C16/45578 , C23C16/52
摘要： A cleaning method includes: removing deposits adhered to an inside of a processing vessel by forming a film on a substrate in the processing vessel, and thereafter, supplying a cleaning gas into the processing vessel, wherein the removing the deposits includes: a first step of supplying the cleaning gas into the processing vessel at a first flow rate when a temperature of a connection portion connecting an exhaust pipe that exhausts the interior of the processing vessel and the processing vessel is lower than a first temperature; and a second step of supplying the cleaning gas to the processing vessel while gradually decreasing the flow rate of the cleaning gas from the first flow rate to a second flow rate lower than the first flow rate when the temperature of the connection portion reaches a first temperature.
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59.发明申请公开(公告)号：US20180015510A1
公开(公告)日：2018-01-18
申请号：US15715482
申请日：2017-09-26
发明人： Kazuya Dobashi , Chishio Koshimizu
CPC分类号： B08B7/0035 , B08B5/00 , H01J37/321 , H01J37/32449 , H01J37/3266 , H01J37/32834 , H01L21/02046 , H01L21/02057 , H01L21/31138 , H01L21/67034
摘要： Disclosed is a processing apparatus for performing a processing on a workpiece using gas clusters. The processing apparatus includes: a processing container in which the workpiece is disposed, and an inside of which is maintained in a vacuum state; an exhaust mechanism that exhausts an atmosphere in the processing container; a gas supply unit that supplies a gas containing a cluster generating gas; a cluster nozzle provided in the processing container and configured to generate gas clusters by adiabatically expanding the cluster generating gas and inject a gas component containing the generated gas clusters into the processing container; and a plasma generating mechanism that generates plasma in the cluster nozzle portion. The gas clusters are ionized by the plasma generated in the cluster nozzle portion, and the ionized gas clusters are injected from the cluster nozzle and irradiated onto the workpiece, so that a predetermined processing is performed.
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公开(公告)号：US09859131B2
公开(公告)日：2018-01-02
申请号：US15316806
申请日：2015-05-22
发明人： Hiroki Horibe , Tomoyuki Habu
CPC分类号： H01L21/4864 , B08B5/00 , B08B7/0057 , B08B7/04 , H01L21/3065 , H01L21/486 , H05K3/0055 , H05K3/26 , H05K3/421 , H05K2203/087
摘要： The present invention has as its object the provision of a desmear treatment device and a desmear treatment method capable of reliably performing a desmear treatment with high treatment efficiency. In the desmear treatment method of the present invention, when irradiating a to-be-treated object disposed in a treatment space with vacuum ultraviolet rays via an ultraviolet transmitting window member to remove smear in the to-be-treated object, a treatment gas containing active species to be activated by the irradiation of the vacuum ultraviolet rays and having contained moisture is supplied into the treatment space. The desmear treatment device includes treatment gas supply means having a humidifying mechanism for causing a treatment gas containing active species to be activated by vacuum ultraviolet rays from an ultraviolet light source to contain moisture.
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