公开(公告)号：US06974364B2

公开(公告)日：2005-12-13

申请号：US10334424

申请日：2002-12-31

申请人： Brian Marshall

发明人： Brian Marshall

IPC分类号： B24B37/04 ,  B24B49/10 ,  B24B49/16 ,  B24B57/02 ,  B24D13/14 ,  B24B49/00 ,  B24B51/00

CPC分类号： B24B37/20 ,  B24B37/04 ,  B24B37/11 ,  B24B49/10 ,  B24B49/16 ,  B24B57/02

摘要： Methods and apparatuses for analyzing and controlling performance parameters in planarization of microelectronic substrates. In one embodiment, a planarizing machine for mechanical or chemical-mechanical planarization includes a table, a planarizing pad on the table, a carrier assembly, and an array of force sensors embedded in at least one of the planarizing pad, a sub-pad under the planarizing pad, or the table. The force sensor array can include shear and/or normal force sensors, and can be configured in a grid pattern, concentric pattern, radial pattern, or a combination thereof. Analyzing and controlling performance parameters in mechanical and chemical-mechanical planarization of microelectronic substrates includes removing material from the microelectronic substrate by pressing the substrate against a planarizing surface, determining a force distribution exerted against the substrate by sensing a plurality of forces at a plurality of discrete nodes as the substrate rubs against the planarizing surface, and controlling a planarizing parameter of a planarizing cycle according to the determined force distribution. A planarizing pad or sub-pad for mechanical or chemical-mechanical planarization in accordance with an embodiment of the invention can include a body having a plurality of raised portions and a plurality of low regions between the raised portions, and a plurality of force sensors embedded in the body at locations relative to the raised portions. Positioning the sensors relative to the raised portion can isolate shear and/or normal forces exerted against the pad by the microelectronic substrate during planarization.

摘要翻译： 用于分析和控制微电子基板平面化性能参数的方法和装置。 在一个实施例中，用于机械或化学机械平面化的平面化机器包括工作台，工作台上的平面化焊盘，载体组件和嵌入在平坦化焊盘中的至少一个中的力传感器阵列， 平坦化垫或桌子。 力传感器阵列可以包括剪切和/或法向力传感器，并且可以被配置成格栅图案，同心图案，径向图案或其组合。 分析和控制微电子衬底的机械和化学机械平面化中的性能参数包括通过将衬底压靠在平坦化表面上来从微电子衬底移除材料，通过感测多个离散的多个力来确定施加于衬底上的力分布 作为基板的节点与平坦化表面摩擦，并且根据确定的力分布来控制平坦化循环的平坦化参数。 根据本发明的实施例的用于机械或化学机械平面化的平坦化焊盘或子焊盘可以包括具有多个凸起部分和在凸起部分之间的多个低区域的主体，以及嵌入的多个力传感器 在相对于凸起部分的位置处的主体。 相对于凸起部分定位传感器可以隔离在平坦化期间由微电子衬底施加在衬垫上的剪切力和/或法向力。

公开(公告)号：US20050260925A1

公开(公告)日：2005-11-24

申请号：US11191962

申请日：2005-07-29

申请人： Tetsuji Togawa

发明人： Tetsuji Togawa

IPC分类号： B24B53/00 ,  B24B37/005 ,  B24B37/30 ,  B24B49/16 ,  B24B53/017 ,  B24B53/02 ,  H01L21/304 ,  B24B49/00 ,  B24B1/00 ,  B24B51/00

CPC分类号： B24B37/30 ,  B24B47/06 ,  B24B49/16 ,  B24B53/017

摘要： A polishing apparatus for polishing a substrate comprises a polishing table having a polishing surface, and a substrate holding apparatus for holding a substrate to be polished and pressing the substrate against the polishing surface. The substrate holding apparatus comprises a vertically movable top ring body for holding a substrate, and a fluid supply source for supplying a fluid under a positive pressure or a negative pressure to a hermetically sealed chamber which is defined in the top ring body so as to control pressure under which the substrate is pressed against the polishing surface. The substrate holding apparatus further comprises a measuring device disposed in a fluid passage interconnecting the hermetically sealed chamber and the fluid supply source for measuring a flow rate of the fluid in the fluid passage.

摘要翻译： 用于抛光基板的抛光装置包括具有抛光表面的抛光台和用于保持要抛光的基板并将基板压靠在抛光表面上的基板保持装置。 基板保持装置包括用于保持基板的可垂直移动的顶环体和用于将正压或负压下的流体供应到限定在顶环体中的气密密封室的流体供给源，以便控制 将基板压在抛光表面上的压力。 基板保持装置还包括设置在将气密密封室和流体供应源互连的流体通道中的测量装置，用于测量流体通道中流体的流量。

公开(公告)号：US20050260922A1

公开(公告)日：2005-11-24

申请号：US10851378

申请日：2004-05-21

申请人： Wee-chen Gan ,  Karen Wong ,  Kuo-Chun Wu

发明人： Wee-chen Gan ,  Karen Wong ,  Kuo-Chun Wu

IPC分类号： B24B37/04 ,  B24B49/00 ,  B24B49/16

CPC分类号： B24B37/013 ,  B24B49/16

摘要： A chemical mechanical polishing (CMP) method is disclosed in which a torque-based end-point algorithm is used to determine when polishing should be stopped. The end-point algorithm is applicable to situations where a ceria (CeO2) based CMP slurry is used for further polishing, pre-patterned and pre-polished workpieces (e.g., semiconductor wafers) which have a high friction over-layer (e.g., HDP-oxide) and a comparatively, lower friction and underlying layer of sacrificial pads (e.g., silicon nitride pads). A mass production wise, reliable and consistent signature point in the friction versus time waveform of a torque-representing signal is found and used to trigger an empirically specified duration of overpolish. A database may be used to define the overpolish time as a function of one or more relevant parameters.

摘要翻译： 公开了一种化学机械抛光（CMP）方法，其中使用基于扭矩的端点算法来确定何时停止抛光。 端点算法适用于将基于二氧化铈（CeO 2/2）的CMP浆料用于进一步抛光，预图案化和预抛光工件（例如，半导体晶片）的情况，其具有高的 摩擦过度层（例如，HDP氧化物）和相对较低的摩擦和下层的牺牲垫（例如，氮化硅垫）。 发现在扭矩表示信号的摩擦时间波形中的大规模生产明智，可靠和一致的签名点，并用于触发经验规定的过度推测的持续时间。 可以使用数据库来定义作为一个或多个相关参数的函数的过时时间。

公开(公告)号：US20050221736A1

公开(公告)日：2005-10-06

申请号：US10812562

申请日：2004-03-30

申请人： Yi-Ping Hsin ,  Yutaka Uda ,  Christopher Smith ,  Bausan Yuan ,  Takeshi Soma ,  Gabor Szoboszlay ,  Hiroshi Arai

发明人： Yi-Ping Hsin ,  Yutaka Uda ,  Christopher Smith ,  Bausan Yuan ,  Takeshi Soma ,  Gabor Szoboszlay ,  Hiroshi Arai

IPC分类号： B24B23/00 ,  B24B37/04 ,  B24B49/16

CPC分类号： B24B49/16 ,  B24B37/042

摘要： Methods and apparatus for applying a uniform polishing pressure on a wafer are disclosed. According to one aspect of the present invention, a chemical mechanical planarization polishing apparatus includes a polishing pad, a wafer holder, and a force control system. The wafer holder supports a wafer to be polished using the polishing pad. The polishing pad is arranged to move relative to the wafer holder such that an area of contact between the wafer holder and the polishing pad varies. The force control system including a controller and a plurality of actuators that apply forces to the polishing pad. The controller controls the forces as the area of contact varies to substantially maintain a first polishing pressure on the wafer arranged to be supported by the wafer holder.

摘要翻译： 公开了在晶片上施加均匀抛光压力的方法和装置。 根据本发明的一个方面，化学机械平面化抛光装置包括抛光垫，晶片保持器和力控制系统。 晶片保持器使用抛光垫支撑待抛光的晶片。 抛光垫布置成相对于晶片保持器移动，使得晶片保持器和抛光垫之间的接触面积发生变化。 力控制系统包括控制器和向抛光垫施加力的多个致动器。 当接触区域变化时，控制器控制力，从而基本上保持晶片上所设置的晶片上的第一抛光压力。

公开(公告)号：US20050221733A1

公开(公告)日：2005-10-06

申请号：US11088191

申请日：2005-03-23

申请人： Tadakazu Miyashita ,  Hiromi Kishida

发明人： Tadakazu Miyashita ,  Hiromi Kishida

IPC分类号： B24B37/005 ,  B24B37/30 ,  B24B37/32 ,  B24B49/16 ,  H01L21/304 ,  B24B5/00

CPC分类号： B24B49/16 ,  B24B37/30

摘要： The polishing apparatus is capable of precisely controlling polishing pressure, correctly positioning a press plate and uniformly polishing a workpiece. In the polishing apparatus, a holding head comprises: first pressing means for introducing a pressurized fluid into a first fluid chamber and pressing a main head section downward; second pressing means for introducing a pressurized fluid into a second fluid chamber and pressing a press plate downward; and third pressing means for introducing a pressurized fluid into a third fluid chamber and pressing the workpiece downward. With this structure, the workpiece is held on the lower side of an elastic sheet member, and the lower face of the workpiece can be polished by a polishing plate.

摘要翻译： 抛光装置能够精确地控制抛光压力，正确定位压板并均匀抛光工件。 在抛光装置中，保持头包括：第一加压装置，用于将加压流体引入第一流体室并向下按压主头部; 第二加压装置，用于将加压流体引入第二流体室并向下按压压板; 以及用于将加压流体引入第三流体室并向下按压工件的第三加压装置。 利用这种结构，工件被保持在弹性片构件的下侧，并且工件的下表面可以通过抛光板进行抛光。

公开(公告)号：US20050205523A1

公开(公告)日：2005-09-22

申请号：US11112787

申请日：2005-04-21

申请人： Nagasubramaniyan Chandrasekaran ,  Theodore Taylor

发明人： Nagasubramaniyan Chandrasekaran ,  Theodore Taylor

IPC分类号： B24B37/005 ,  B24B37/04 ,  B24B49/16 ,  C09G1/02 ,  C09K3/14 ,  H01L21/321 ,  B44C1/22

CPC分类号： B24B37/0056 ,  B24B37/044 ,  B24B49/16 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/3212 ,  H01L45/085 ,  H01L45/143 ,  H01L45/1683

摘要： Microelectronic devices including a layer of germanium and selenium, optionally including up to 10 atomic percent silver, show promise for select applications. Manufacturing microelectronic devices containing such layers using conventional CMP processes presents some significant challenges. Embodiments of the invention provide methods of planarizing workpieces with Ge—Se layers, many of which can be carried out using conventional CMP equipment. Other embodiments of the invention provide chemical-mechanical polishing systems adapted to produce planarized workpieces with Ge—Se layers or, in at least one embodiment, other alternative layers. Various approaches suggested herein facilitate production of such microelectronic devices by appropriate control of the down force of the Ge—Se layer against the planarizing medium and/or one or more aspects of the planarizing medium, which aspects include pH, abrasive particle size, abrasive particle hardness, weight percent of abrasive.

公开(公告)号：US20050193819A1

公开(公告)日：2005-09-08

申请号：US11072948

申请日：2005-03-07

申请人： Gianni Trionfetti ,  Andrea Guidotti

发明人： Gianni Trionfetti ,  Andrea Guidotti

IPC分类号： B24B41/04 ,  B24B47/22 ,  B24B49/00 ,  B24B49/16 ,  G01H1/00 ,  G01N29/00

CPC分类号： B24B47/22 ,  B24B41/04 ,  B24B49/16 ,  G01H1/003

摘要： A precision sensor assembly for rotating members in a machine tool comprises a rotor unit (16) rigidly fixed to a rotor portion (2a) of the machine tool and including a sensor (5) for detecting vibrations produced by the operation of the machine tool, the sensor (5) comprising a piezoelectric sensitive element (6) and members (7, 8) for mechanical amplification of the vibrations. The members (7, 8) comprise at least one resonant system composed of an elastic element (8) and a counter-mass (7) acting on the piezoelectric sensitive element (6). The rotor and stator units (16, 17) comprise inductively coupled transmitting and receiving elements (10, 11) for transferring the signals from the piezoelectric element (6) contactless to the stator unit (17). The stator unit (17) may include an electric amplifier (13) for further amplifying the transmitted signals.

摘要翻译： 用于在机床中旋转构件的精密传感器组件包括刚性地固定到机床的转子部分（2a）的转子单元（16），并且包括传感器（5），用于检测机床的操作产生的振动 ，所述传感器（5）包括压电敏感元件（6）和用于振动的机械放大的构件（7,8）。 构件（7,8）包括由作用在压电敏感元件（6）上的弹性元件（8）和反质量块（7）组成的至少一个谐振系统。 转子和定子单元（16,17）包括用于将来自压电元件（6）的信号非接触地传递到定子单元（17）的感应耦合的传输和接收元件（10,11）。 定子单元（17）可以包括用于进一步放大发射信号的电放大器（13）。

公开(公告)号：US20050191944A1

公开(公告)日：2005-09-01

申请号：US11052801

申请日：2005-02-09

申请人： Masashi Yoritsune ,  Yoshio Wakazono ,  Hisanobu Kobayashi

发明人： Masashi Yoritsune ,  Yoshio Wakazono ,  Hisanobu Kobayashi

IPC分类号： B24B53/00 ,  B24B49/16 ,  B24B53/08 ,  B24B49/00

CPC分类号： B24B53/08 ,  B24B49/16

摘要： In a truing method and apparatus, an analyzing method is employed to calculate a truing shape from which a grinding surface having been trued with a grinding wheel being rotated at a low rotational speed during a truing operation is deformed to a desired shape due to centrifugal expansion depending on a rotational speed difference when the grinding wheel is rotated at a high rotational speed during a grinding operation. Then, with the grinding wheel being rotated at the low rotational speed, the grinding surface is trued with a truing roll to the calculated truing shape. As a result, the grinding surface of the grinding wheel being rotated at the low rotational speed is trued with the truing roll taking into consideration the centrifugal expansion of the grinding surface which takes place when the grinding wheel is rotatated at the high rotational speed during the grinding operation subsequent to the truing operation.

摘要翻译： 在修整方法和装置中，采用分析方法来计算在修整操作期间用砂轮在低转速下转动的磨削表面由于离心膨胀而变形到所需形状的修整形状 取决于在研磨操作期间砂轮以高转速旋转时的转速差。 然后，随着砂轮以低转速旋转，研磨表面用修整辊修整到计算的修整形状。 因此，考虑到在砂轮在高转速期间砂轮以高转速旋转时发生的研磨面的离心膨胀，研磨轮以低转速旋转的研磨面被修整 在修整操作之后的磨削操作。

公开(公告)号：US06932675B1

公开(公告)日：2005-08-23

申请号：US10771842

申请日：2004-02-04

申请人： Shane E. Bremer ,  Scott A. Hucker ,  Philip E. Burgess

发明人： Shane E. Bremer ,  Scott A. Hucker ,  Philip E. Burgess

IPC分类号： B24B49/00 ,  B24B49/16 ,  B24B51/00

CPC分类号： B24B49/16

摘要： A method of determining the condition of a grinding wheel is provided to avoid over use or premature changing of the grinding wheel in a grinding machine, such as for crankshaft or camshaft grinding. The grinding machine has a motor which drives a grinding spindle carrying an abrasive coated hub acting as a grinding wheel. Sensors detect the level of grinding force and motor torque required to grind a workpiece into a desired shape. The information is relayed to a controller, which averages and compares the grinding force and torque information to force and torque limits to determine the condition of the wheel. In addition, the controller compares grinding force and motor torque over a series of grinds to determine the level of increase between grinds to further determine the condition of the grinding wheel. If the level of increase exceeds an increase limit, the controller actuates a fault signal to stop the grinding machine indicating that the wheel is near the end of its life cycle.

摘要翻译： 提供了一种确定砂轮状态的方法，以避免砂轮在磨床中的过度使用或过早变化，例如用于曲轴或凸轮轴磨削。 研磨机具有驱动研磨主轴的马达，所述研磨主轴承载用作研磨轮的研磨涂层轮毂。 传感器检测研磨力和电机转矩的水平，以将工件磨削成所需的形状。 信息被传递到控制器，该控制器将磨削力和转矩信息平均化并将其与力矩和转矩限制进行比较，以确定车轮的状况。 另外，控制器通过一系列研磨比较研磨力和电机扭矩，以确定研磨之间的增加水平，以进一步确定砂轮的状况。 如果增加量超过增加限制，则控制器启动故障信号以停止磨床，指示车轮接近其寿命周期结束。

公开(公告)号：US20050178743A1

公开(公告)日：2005-08-18

申请号：US11048117

申请日：2005-02-01

申请人： Antoine Manens ,  Liang-Yuh Chen

发明人： Antoine Manens ,  Liang-Yuh Chen

IPC分类号： B23H5/06 ,  B23H5/08 ,  B24B37/04 ,  B24B49/16 ,  C23F1/00 ,  B44C1/22

CPC分类号： B24B37/046 ,  B23H5/06 ,  B23H5/08 ,  B24B37/042 ,  B24B37/22 ,  B24B49/16

摘要： Aspects of the invention generally provide a method for polishing a material layer using electrochemical deposition techniques, electrochemical dissolution techniques, polishing techniques, and/or combinations thereof. In one aspect of the invention, the polishing method comprises applying a separate electrical bias, such as a voltage, to each of a plurality of zones of an electrode. Determining the separate biases comprises determining a time that at least one portion of the material layer is associated with each of the zones of the counter-electrode.