公开(公告)号：US11099133B2

公开(公告)日：2021-08-24

申请号：US16798345

申请日：2020-02-22

申请人： Tsinghua University

发明人： Zhengjun Zhang ,  Fengtong Zhao

IPC分类号： G01J3/44 ,  G01N21/65 ,  C23C14/18 ,  C23C14/28 ,  C23C14/50 ,  G01N21/01 ,  H01J37/305

摘要： Disclosed are a flexible paper-based surface-enhanced Raman scattering (SERS) substrate and a method of preparing the same, which relate to detection of trace organics. This invention deposits a film of silver nanoparticles on a carrier such as filter paper by oblique-angle deposition to prepare the SERS substrate, which can be used for the detection of trace organics. Silver nanoparticles are closely arranged on the flexible paper, allowing the substrate for good SERS effect due to the interparticle coupling effect. Moreover, compared to the traditional rigid and brittle substrates, the substrate prepared herein can be readily used in the detection of residual organics on complex surfaces in various liquid or solid conditions by dipping, dropwise adding or wiping due to the use of a flexible and absorbent carrier.

公开(公告)号：US20210219679A1

公开(公告)日：2021-07-22

申请号：US17056241

申请日：2019-05-17

申请人： D. Swarovski KG

发明人： Alexander Rief ,  Thomas Rauch ,  Jan Woerdenweber

IPC分类号： A44C27/00 ,  C23C14/00 ,  C23C14/58 ,  C23C14/18

摘要： A method of making a decorative article (1) such as a jewellery piece, the article comprising a body (2) having a decorative layer (5) and an element (3) set into the body. The method comprises: providing an element that is at least partially coated with a removable layer (4), setting the element into the body, coating the element and the body with the decorative layer, and removing the removable layer and the decorative layer from the element.

公开(公告)号：US20210184183A1

公开(公告)日：2021-06-17

申请号：US16649680

申请日：2019-12-13

申请人： WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO,, LTD.

发明人： Yamin WANG

IPC分类号： H01L51/56 ,  H01L51/50 ,  H01L51/00 ,  B05D1/00 ,  B05D3/00 ,  C23C14/35 ,  C23C14/24 ,  C23C14/08 ,  C23C14/18

摘要： A manufacturing method of a graphene oxide film, an organic light-emitting diode (OLED) and a manufacturing method thereof are provided. The OLED includes a substrate, an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer, and a cathode stacked in sequence. The hole injection layer is a graphene oxide layer having a concentration ranging from 0.3 to 1 mg/ml. The hole transport layer is any one of N,N′-diphenyl-N,N′-bis(3-tolyl)-1,1′-biphenyl-4,4′-diamine, 1,4-bis(diphenylamino) biphenyl, or N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′-biphenyl-4,4′-diamine.

公开(公告)号：US10991882B2

公开(公告)日：2021-04-27

申请号：US16552745

申请日：2019-08-27

申请人： Micron Technology, Inc.

发明人： Christopher W. Petz ,  Yongjun Jeff Hu ,  Scott E. Sills ,  D. V. Nirmal Ramaswamy

IPC分类号： H01L23/52 ,  G11C13/00 ,  H01L45/00 ,  H01L27/24 ,  H01L23/522 ,  H01L27/22 ,  C23C14/06 ,  C23C14/08 ,  C23C14/18 ,  C23C14/34 ,  C23C16/34 ,  C23C16/36 ,  C23C16/40 ,  C23C16/455

摘要： A resistive memory element comprises a first electrode, an active material over the first electrode, a buffer material over the active material and comprising longitudinally extending, columnar grains of crystalline material, an ion reservoir material over the buffer material, and a second electrode over the ion reservoir material. A memory cell, a memory device, an electronic system, and a method of forming a resistive memory element are also described.

公开(公告)号：US10969307B2

公开(公告)日：2021-04-06

申请号：US16519324

申请日：2019-07-23

申请人： Moxtek, Inc.

发明人： Matthew R. Linford ,  Anubhav Diwan ,  Bhupinder Singh

IPC分类号： G01N1/22 ,  C23C14/10 ,  G01N33/00 ,  C23C14/18 ,  C23C14/35 ,  C23C14/58 ,  G01N1/40 ,  C23C14/34 ,  G01N1/10

摘要： An extractive system, such as SPME, has an adsorptive phase in the form of a porous coating that has essentially vertical, mutually supporting, columnar structures with nanospaces at the boundaries of the grains.

公开(公告)号：US10947607B1

公开(公告)日：2021-03-16

申请号：US16916195

申请日：2020-06-30

申请人： Arvind Agarwal ,  Pranjal Nautiyal ,  Benjamin Peter Boesl

发明人： Arvind Agarwal ,  Pranjal Nautiyal ,  Benjamin Peter Boesl

IPC分类号： B22F7/00 ,  C22C1/05 ,  C22C1/04 ,  C23C14/34 ,  C23C14/18 ,  C22C23/00

摘要： Boron nitride nanotube (BNNT)-magnesium (Mg) alloy composites and methods of fabricating the same are provided. The BNNT-Mg alloy composites can have a sandwich structure and can be fabricated by high-pressure spark plasma sintering. A mat of BNNTs can be sputter-coated with Mg, and then sandwiched between Mg alloy particles, followed by a sintering step. The BNNTs can include a hexagonal boron nitride phase.

公开(公告)号：US10927446B2

公开(公告)日：2021-02-23

申请号：US16568905

申请日：2019-09-12

申请人： FUJIFILM Corporation

发明人： Seigo Nakamura ,  Kenichi Umeda ,  Yuichiro Itai ,  Shinichiro Sonoda

IPC分类号： C23C14/24 ,  C23C14/08 ,  C23C14/18 ,  G02B1/115

摘要： This method for producing a transparent optical film includes a film formation step of forming a silver layer and a high standard electrode potential metal layer so as to be laminated on a substrate, the film formation step including a silver deposition step of forming the silver layer, at a thickness of 6 nm or less by vacuum deposition, and a high standard electrode potential metal deposition step of forming the high standard electrode potential metal layer formed of a high standard electrode potential metal having a higher standard electrode potential than that of silver by vacuum deposition, and an alloying step of forming a silver alloy layer by diffusing the high standard electrode potential metal within the silver layer by performing a heating treatment at a temperature of 50° C. or higher and 400° C. or lower.

公开(公告)号：US10910165B2

公开(公告)日：2021-02-02

申请号：US15556242

申请日：2016-03-04

申请人： University of Technology Sydney

发明人： Mohsin Ahmed ,  Francesca Iacopi

IPC分类号： H01G11/36 ,  H01G11/26 ,  H01G11/56 ,  C01B32/184 ,  C23C14/18 ,  C23C14/58 ,  C23C16/32 ,  H01G11/86 ,  H01G11/28 ,  H01G11/68 ,  H01G11/32 ,  C23C14/34 ,  C23C28/00 ,  C23F1/30 ,  C30B25/18 ,  C30B29/36 ,  H01G11/34 ,  B82Y30/00 ,  B82Y40/00

摘要： A process for forming high surface area graphene structures includes: depositing at least one metal on a surface of silicon carbide; heating the at least one metal and the silicon carbide to cause at least one of the metals to react with a portion of the silicon carbide to form silicide regions extending into an unreacted portion of the silicon carbide and graphene disposed between the silicide regions and the unreacted portion of the silicon carbide; and removing the silicide regions to provide a silicon carbide structure having a highly irregular surface and a surface layer of graphene.

公开(公告)号：US10895006B2

公开(公告)日：2021-01-19

申请号：US15345863

申请日：2016-11-08

申请人： City University of Hong Kong

发明人： Jian Lu ,  Ge Wu

IPC分类号： B32B15/01 ,  C23C14/35 ,  C23C14/16 ,  C23C14/54 ,  C23C14/02 ,  C22C18/00 ,  C22C1/00 ,  C22C45/00 ,  C22F1/06 ,  C23C28/02 ,  C23C30/00 ,  C23C14/18 ,  C22F1/047 ,  C23C14/58 ,  C23C28/00 ,  C22F3/00 ,  C22C23/00 ,  C23C14/14 ,  B32B7/02 ,  B32B15/00 ,  B32B15/16 ,  C22C23/02 ,  C22C23/04

摘要： A metallic structure includes a first plurality of metal particles arranged in an amorphous structure; a second plurality of metal particles arranged in a crystalline structure having at least two grain sizes, wherein the crystalline structure is arranged to receive the amorphous structure deposited thereon; wherein the grain size is arranged in a gradient structure.

公开(公告)号：US20200381616A1

公开(公告)日：2020-12-03

申请号：US16490520

申请日：2019-02-14

申请人： ULVAC, INC.

发明人： Seungjun OH ,  Tadashi MORITA ,  Tatsuhiro NOZUE

IPC分类号： H01L43/12 ,  H01L43/10 ,  C23C14/18 ,  C23C14/58 ,  C23C14/34

摘要： A method includes forming an amorphous magnetic film on a film formation subject by sputtering a target that includes any one selected from a group consisting of Mn3Sn, Mn3Ge, and (Mn1-xFex)Ge as a main component and crystalizing the amorphous magnetic film by heating the amorphous magnetic film. The crystalizing includes heating the amorphous magnetic film to a temperature that is greater than or equal to 225° C. and less than or equal to 400° C.