Multi-functional cyclic siloxane compound and process for preparing dielectric film by using siloxane-based polymer prepared from the compound
    61.
    发明申请
    Multi-functional cyclic siloxane compound and process for preparing dielectric film by using siloxane-based polymer prepared from the compound 有权
    多功能环状硅氧烷化合物以及使用由该化合物制备的硅氧烷类聚合物制备电介质膜的方法

    公开(公告)号:US20090269942A1

    公开(公告)日:2009-10-29

    申请号:US12458009

    申请日:2009-06-29

    CPC classification number: C07F7/21 Y10T428/31663

    Abstract: A multi-functional cyclic siloxane compound (A), a siloxane-based (co)polymer prepared from the compound (A), or compound (A) and at least one of a Si monomer having organic bridges (B), an acyclic alkoxy silane monomer (C), and a linear siloxane monomer (D); and a process for preparing a dielectric film using the polymer. The siloxane compound of the present invention is highly reactive, so the polymer prepared from the compound is excellent in mechanical properties, thermal stability and crack resistance, and has a low dielectric constant resulting from compatibility with conventional pore-generating materials. Furthermore, a low content of carbon and high content of SiO2 enhance its applicability to the process of producing a semiconductor, wherein it finds great use as a dielectric film.

    Abstract translation: 多官能环状硅氧烷化合物(A),由化合物(A)或化合物(A)制备的硅氧烷类(共)聚合物和至少一种具有有机桥(B)的Si单体,无环烷氧基 硅烷单体(C)和直链硅氧烷单体(D); 以及使用该聚合物制备电介质膜的方法。 本发明的硅氧烷化合物具有高反应性,因此由该化合物制备的聚合物的机械性能,热稳定性和抗裂性优异,并且由于与常规孔产生材料的相容性而具有低的介电常数。 此外,低含量的碳和高含量的SiO 2增强了其在制造半导体的过程中的适用性,其中它被广泛用作电介质膜。

    Multi-functional cyclic siloxane compound, a siloxane-based polymer prepared from the compound and a process for preparing a dielectric film by using the polymer
    62.
    发明授权
    Multi-functional cyclic siloxane compound, a siloxane-based polymer prepared from the compound and a process for preparing a dielectric film by using the polymer 有权
    多官能环状硅氧烷化合物,由该化合物制备的硅氧烷类聚合物和使用聚合物制备电介质膜的方法

    公开(公告)号:US07576230B2

    公开(公告)日:2009-08-18

    申请号:US10878119

    申请日:2004-06-29

    CPC classification number: C07F7/21 Y10T428/31663

    Abstract: A multi-functional cyclic siloxane compound (A), a siloxane-based (co)polymer prepared from the compound (A), or compound (A) and at least one of a Si monomer having organic bridges (B), an acyclic alkoxy silane monomer (C), and a linear siloxane monomer (D); and a process for preparing a dielectric film using the polymer. The siloxane compound of the present invention is highly reactive, so the polymer prepared from the compound is excellent in mechanical properties, thermal stability and crack resistance, and has a low dielectric constant resulting from compatibility with conventional pore-generating materials. Furthermore, a low content of carbon and high content of SiO2 enhance its applicability to the process of producing a semiconductor, wherein it finds great use as a dielectric film.

    Abstract translation: 多官能环状硅氧烷化合物(A),由化合物(A)或化合物(A)制备的硅氧烷类(共)聚合物和至少一种具有有机桥(B)的Si单体,无环烷氧基 硅烷单体(C)和直链硅氧烷单体(D); 以及使用该聚合物制备电介质膜的方法。 本发明的硅氧烷化合物具有高反应性,因此由该化合物制备的聚合物的机械性能,热稳定性和抗裂性优异,并且由于与常规孔产生材料的相容性而具有低的介电常数。 此外,低含量的碳和高含量的SiO 2增强了其在制造半导体的过程中的适用性,其中它被广泛用作电介质膜。

    MTCMOS FLIP-FLOP WITH RETENTION FUNCTION
    63.
    发明申请
    MTCMOS FLIP-FLOP WITH RETENTION FUNCTION 审中-公开
    具有保留功能的MTCMOS FLIP-FLOP

    公开(公告)号:US20090066386A1

    公开(公告)日:2009-03-12

    申请号:US12195075

    申请日:2008-08-20

    Applicant: Jae Jun LEE

    Inventor: Jae Jun LEE

    CPC classification number: H03K3/35625 H03K3/012

    Abstract: There is provided a MTCMOS flip-flop configured to operate at high speed and to reduce leakage current while realizing a retention function in a sleep mode. The MTCMOS flip-flop may include a signal generator adapted to output an internal clock signal or a sleep mode control signal based on changes in a retention signal and an external clock signal, a master latch adapted to latch an input signal and to output a master latch output signal based on the internal clock signal, and a slave latch connected to an actual ground and adapted to latch the master latch signal, to output a slave latch output signal under control of the internal clock signal, and to maintain the latched signal under control of the sleep mode control signal in the sleep mode.

    Abstract translation: 提供了一种MTCMOS触发器,配置为在休眠模式下实现保持功能,高速运行并减少漏电流。 MTCMOS触发器可以包括适于基于保持信号和外部时钟信号的改变来输出内部时钟信号或睡眠模式控制信号的信号发生器,适于锁存输入信号的主锁存器和输出主器件 基于内部时钟信号的锁存输出信号,以及连接到实际地线并适于锁存主锁存信号的从锁存器,在内部时钟信号的控制下输出从锁存器输出信号,并将锁存信号保持在 在休眠模式下控制睡眠模式控制信号。

    METHOD FOR PROVIDING MOBILE SERVICE USING CODE-PATTERN
    64.
    发明申请
    METHOD FOR PROVIDING MOBILE SERVICE USING CODE-PATTERN 有权
    使用代码模式提供移动服务的方法

    公开(公告)号:US20080247363A1

    公开(公告)日:2008-10-09

    申请号:US12140930

    申请日:2008-06-17

    Abstract: A method and apparatus for providing a mobile service with the use of a code pattern is disclosed In one embodiment, the method comprising: taking a photograph of a code pattern image, decoding the photographed code pattern image so as to obtain code information, extracting uniform resource locator (URL) information corresponding to the code information, transmitting a content information request message to a service provider server corresponding to the URL information, and receiving content information corresponding to the URL information from the service provider server. According to embodiments of the present invention, it is possible to provide various and convenient mobile services to mobile terminal users using a mobile terminal, having a camera, and a code pattern containing the URL information.

    Abstract translation: 公开了一种使用代码图案提供移动业务的方法和装置。在一个实施例中,该方法包括:拍摄代码图像图像,解码所拍摄的代码图形图像,以获得代码信息,提取均匀 资源定位符(URL)信息,与所述URL信息相对应地向服务提供方服务器发送内容信息请求消息,从所述服务提供商服务器接收与所述URL信息对应的内容信息。 根据本发明的实施例,可以使用具有相机的移动终端和包含URL信息的代码模式向移动终端用户提供各种和方便的移动服务。

    Memory module and signal line arrangement method thereof
    65.
    发明授权
    Memory module and signal line arrangement method thereof 有权
    存储模块及其信号线排列方法

    公开(公告)号:US07390973B2

    公开(公告)日:2008-06-24

    申请号:US11357500

    申请日:2006-02-17

    Abstract: The pesent invention discloses a memory module and a signal line arrangement method thereof. The memory module includes memory chips mounted on both sidees in a mirror form; and a printed circuit board (PCB) having same signal applying contact pads arranged on both sodes which same signal applying balls of the memory chips contact in the mirror form, wherein a via is formed at a location close to the same signal applying contact pad of one side among the same signal applying contact pads arranged on both sides in the mirror form, the via connecting the other side to the signal line of one side, and a signal transmitted from the other side is connected to a contact junction, the contact junction is connected to the same signal applying contact pad of the other side, the contact junction is connected to the via of the other side, and the via of one side is connected to the same signal applying contact pad of one side.

    Abstract translation: 本发明公开了一种存储模块及其信号线排列方法。 存储器模块包括以镜子形式安装在两侧的存储器芯片; 以及具有相同信号的印刷电路板(PCB),其施加布置在两个信号线上的接触焊盘,所述存储器芯片的相同信号施加球以镜子形式接触,其中通孔形成在接近相同信号的位置处,施加接触焊盘 在相同的信号中,以镜面形式设置在两侧的接触焊盘的一侧,将另一侧连接到一侧的信号线的通孔,并且从另一侧传输的信号连接到接触接点,接触接点 连接到另一侧的相同信号施加接触焊盘,接触点连接到另一侧的通孔,并且一侧的通孔连接到施加一侧接触焊盘的相同信号。

    Semiconductor memory system having multiple system data buses
    68.
    发明授权
    Semiconductor memory system having multiple system data buses 有权
    具有多个系统数据总线的半导体存储器系统

    公开(公告)号:US07215561B2

    公开(公告)日:2007-05-08

    申请号:US10644735

    申请日:2003-08-21

    CPC classification number: G06F13/4234 Y02D10/14 Y02D10/151

    Abstract: The semiconductor memory system includes a memory controller, N system data buses, and first through P-th memory module groups. The N system data buses are connected to the memory controller and respectively have a width of M/N bits. The first through P-th memory module groups are connected to the N system data buses and respectively have N memory modules. In each of the first through P-th memory module groups, a different one of the N system data buses is connected to each of the N memory modules, and each of the N system data buses has a data bus width of M/N bits. The first through P-th memory module groups are operated in response to first through P-th corresponding chip select signals. M is the bit-width of an entire system data bus of the semiconductor memory system. The N system data buses are wired such that data transmission times are the same from each N memory modules that operate in response to the same chip select signal to the memory controller.

    Abstract translation: 半导体存储器系统包括存储器控制器,N个系统数据总线以及第一到第P个存储器模块组。 N个系统数据总线连接到存储器控制器,并且分别具有M / N位的宽度。 第一至第P存储器模块组连接到N个系统数据总线,并分别具有N个存储器模块。 在第一到第P存储器模块组中的每一个中,N个系统数据总线中的不同的一个连接到N个存储器模块中的每一个,并且N个系统数据总线中的每一个具有M / N位的数据总线宽度 。 响应于第一至第P对应的芯片选择信号操作第一到第P个存储器模块组。 M是半导体存储器系统的整个系统数据总线的位宽。 N系统数据总线被布线,使得数据传输时间与从存储器控制器的相同芯片选择信号响应的每个N个存储器模块相同。

    Dendrimer solid acid and polymer electrolyte membrane including the same
    69.
    发明申请
    Dendrimer solid acid and polymer electrolyte membrane including the same 有权
    树枝状聚合物固体酸和聚合物电解质膜包括相同的

    公开(公告)号:US20070092779A1

    公开(公告)日:2007-04-26

    申请号:US11546020

    申请日:2006-10-10

    Abstract: Provided are a dendrimer solid acid and a polymer electrolyte membrane using the same. The polymer electrolyte membrane includes a macromolecule of a dendrimer solid acid having ionically conductive terminal groups at the surface thereof and a minimum amount of ionically conductive terminal groups required for ionic conduction, thus suppressing swelling and allowing a uniform distribution of the dendrimer solid acid, thereby improving ionic conductivity. Since the number of ionically conductive terminal groups in the polymer electrolyte membrane is minimized and the polymer matrix in which swelling is suppressed is used, methanol crossover and difficulties of outflow due to a large volume may be reduced, and a macromolecule of the dendrimer solid acid having the ionically conductive terminal groups on the surface thereof is uniformly distributed. Accordingly, ionic conductivity is high and thus, the polymer electrolyte membrane shows good ionic conductivity even in non-humidified conditions.

    Abstract translation: 提供了树枝状聚合物固体酸和使用其的聚合物电解质膜。 聚合物电解质膜包括其表面具有离子导电性端基的树枝状聚合物固体酸的高分子和离子传导所需的离子导电性端基的最小量,因此抑制了树枝状聚合物固体酸的均匀分布,从而 提高离子电导率。 由于聚合物电解质膜中的离子导电性端基的数量被最小化,并且使用抑制了溶胀的聚合物基体,所以甲基交联和体积大的流出困难可能降低,并且树枝状聚合物固体酸的高分子 其表面上的离子导电性端基均匀分布。 因此,离子电导率高,因此即使在非加湿条件下,高分子电解质膜也具有良好的离子传导性。

    Oligomer solid acid and polymer electrolyte membrane including the same
    70.
    发明申请
    Oligomer solid acid and polymer electrolyte membrane including the same 审中-公开
    低聚物固体酸和包含其的聚合物电解质膜

    公开(公告)号:US20070092778A1

    公开(公告)日:2007-04-26

    申请号:US11546005

    申请日:2006-10-10

    Abstract: An oligomer solid acid and a polymer electrolyte membrane using the same. The polymer electrolyte membrane includes a macromolecule of oligomer solid acid having an ionically conductive terminal group at its terminal end and the minimum amount of ionically conductive terminal groups required for ion conduction, thus suppressing swelling and allowing a uniform distribution of the oligomer solid acid, thereby improving ionic conductivity. Since the number of ionically conductive terminal groups in the polymer electrolyte membrane is minimized and the polymer matrix in which swelling is suppressed is used, methanol crossover and difficulties of outflow due to a large volume are minimized, and a macromolecule of the oligomer solid acid having the ionically conductive terminal groups on the surface thereof is uniformly distributed. Accordingly, ionic conductivity is high and thus, the polymer electrolyte membrane shows good ionic conductivity even in low humidity conditions.

    Abstract translation: 低聚物固体酸和使用其的聚合物电解质膜。 高分子电解质膜包括在其末端具有离子导电性端基的低聚物固体酸的高分子和离子传导所需的离子导电性端基的最小量,因此抑制溶胀并使低聚物固体酸均匀分布,由此 提高离子电导率。 由于使用聚合物电解质膜中的离子导电性端基的数量最少,抑制了溶胀的聚合物基质,所以甲醇交联和体积大的流出困难被最小化,低聚物固体酸的高分子具有 其表面上的离子导电端基均匀分布。 因此,离子电导率高,因此即使在低湿度条件下,高分子电解质膜也具有良好的离子传导性。

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