Presence detection device and method

    公开(公告)号:US11941961B2

    公开(公告)日:2024-03-26

    申请号:US17823709

    申请日:2022-08-31

    IPC分类号: G08B13/19 G08B13/22

    CPC分类号: G08B13/19 G08B13/22

    摘要: In accordance with an embodiment, a detection device includes: an infrared temperature sensor configured to provide a temperature signal associated with an heat emission of at least one individual within a monitored area; an electrostatic-charge-variation sensor configured to provide a charge-variation signal indicative of a variation of electrostatic charge associated with the at least one individual; and a processing unit, coupled to the infrared temperature sensor and to the electrostatic-charge-variation sensor, the processing unit configured to detect a presence of the at least one individual within the monitored area by receiving the temperature signal and the charge-variation signal, and jointly processing the temperature signal and charge.

    LID ANGLE DETECTION
    63.
    发明公开
    LID ANGLE DETECTION 审中-公开

    公开(公告)号:US20240085960A1

    公开(公告)日:2024-03-14

    申请号:US18516453

    申请日:2023-11-21

    摘要: The present disclosure is directed to a device and method for lid angle detection that is accurate even if the device is activated in an upright position. While the device is in a sleep state, first and second sensor units measure acceleration and angular velocity, and calculate orientations of respective lid components based on the acceleration and angular velocity measurements. Upon the device exiting the sleep state, a processor estimates the lid angle using the calculated orientations, sets the estimated lid angle as an initial lid angle, and updates the initial lid angle using, for example, two accelerometers; two accelerometers and two gyroscopes; two accelerometers and two magnetometers; or two accelerometers, two gyroscopes, and two magnetometers.

    Voltage multiplier circuit
    64.
    发明授权

    公开(公告)号:US11929674B2

    公开(公告)日:2024-03-12

    申请号:US17732281

    申请日:2022-04-28

    IPC分类号: H02M3/07

    CPC分类号: H02M3/07

    摘要: In an embodiment, a voltage multiplier comprises an input node, an output node, and first and second control nodes for receiving first and second clock signals defining two commutation states. An ordered sequence of intermediate nodes is coupled between the input and output nodes and includes two ordered sub-sequences. Capacitors are coupled: between each odd intermediate node in the first sub-sequence and the first control node; between each even intermediate node in the first sub-sequence and the second control node; between each odd intermediate node in the second sub-sequence and a corresponding odd intermediate node in the first sub-sequence; and between each even intermediate node in the second sub-sequence and a corresponding even intermediate node in the first sub-sequence. The circuit comprises selectively conductive electronic components coupled to the intermediate nodes.

    TIME DIVISION MULTIPLEXING HUB
    66.
    发明公开

    公开(公告)号:US20240072922A1

    公开(公告)日:2024-02-29

    申请号:US17898335

    申请日:2022-08-29

    IPC分类号: H04J3/06

    CPC分类号: H04J3/0685 H04J3/0617

    摘要: An integrated circuit includes a control circuit, a primary sensor device coupled to the control circuit, and a plurality of groups of secondary sensor devices coupled to the primary sensor device. The primary sensor device receives a master clock signal from the control device and outputs, to each group of secondary sensor devices, a respective secondary clock signal with a frequency lower than the primary clock signal. The primary sensor device generates primary sensor data. The primary sensor device receives secondary sensor data from each group of secondary sensor devices. The primary sensor device combines the primary sensor data and all of the secondary sensor data into a sensor data stream with a time division-multiplexing scheme and outputs the sensor data stream to the control circuit.

    Method of manufacturing semiconductor devices and corresponding device

    公开(公告)号:US11901250B2

    公开(公告)日:2024-02-13

    申请号:US17411585

    申请日:2021-08-25

    摘要: A semiconductor chip or die is mounted at a position on a support substrate. A light-permeable laser direct structuring (LDS) material is then molded onto the semiconductor chip positioned on the support substrate. The semiconductor chip is visible through the LDS material. Laser beam energy is directed to selected spatial locations of the LDS material to structure in the LDS material a pat gstern of structured formations corresponding to the locations of conductive lines and vias for making electrical connection to the semiconductor chip. The spatial locations of the LDS material to which laser beam energy is directed are selected as a function of the position the semiconductor chip which is visible through the LDS material, thus countering undesired effects of positioning offset of the chip on the substrate.