公开(公告)号：US08673077B2

公开(公告)日：2014-03-18

申请号：US13984283

申请日：2012-03-02

申请人： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

发明人： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

IPC分类号： C23C16/00 ,  H01L21/31

CPC分类号： H01L51/5012 ,  C23C14/042 ,  C23C14/243 ,  C23C14/564 ,  H01L51/0011 ,  H01L51/56 ,  H05B33/10

摘要： Vapor deposition particles (91) discharged from at least one vapor deposition source opening (61) pass through a plurality of limiting openings (82) of a limiting unit (80) and a plurality of mask openings (71) of a vapor deposition mask (70), and adhere to a substrate (10) that relatively moves along a second direction (10a) so as to form a coating film. The limiting unit includes a plurality of plate members stacked on one another. Accordingly, it is possible to efficiently form a vapor deposition coating film in which edge blurring is suppressed on a large-sized substrate at a low cost.

摘要翻译： 从至少一个气相沉积源开口（61）排出的气相沉积颗粒（91）通过限制单元（80）的多个限制开口（82）和气相沉积掩模的多个掩模开口（71） 70），并且粘附到沿着第二方向（10a）相对移动以形成涂膜的基板（10）。 限制单元包括彼此堆叠的多个板构件。 因此，可以以低成本有效地形成在大尺寸基板上抑制边缘模糊的气相沉积涂膜。

公开(公告)号：US20140004641A1

公开(公告)日：2014-01-02

申请号：US14004896

申请日：2012-03-09

申请人： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

发明人： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

IPC分类号： H01L51/56

CPC分类号： H01L51/56 ,  C23C14/042 ,  C23C14/12 ,  C23C14/243 ,  H05B33/10

摘要： A vapor deposition device (1) performs a vapor deposition treatment to form a luminescent layer (47) having a predetermined pattern on a film formation substrate (40). The vapor deposition device includes: a nozzle (13) having a plurality of injection holes (16) from which vapor deposition particles (17), which constitute the luminescent layer, are injected toward the film formation substrate when the vapor deposition treatment is carried out; and a plurality of control plates (20) provided between the nozzle and the film formation substrate and restricting an incident angle, with respect to the film formation substrate, of the vapor deposition particles injected from the plurality of injection holes. The nozzle includes: a nozzle main body (14b) in a container shape having an opening (14c) on a surface thereof on a film formation substrate side and (ii) a plurality of blocks (15) covering the opening and separated from each other, each of the plurality of blocks having the plurality of injection holes. The above arrangement allows a vapor-deposited film pattern to be formed with high definition.

摘要翻译： 蒸镀装置（1）进行蒸镀处理，在成膜基板（40）上形成具有规定图案的发光层（47）。 气相沉积装置包括：具有多个喷射孔（16）的喷嘴（13），当进行气相沉积处理时，构成发光层的气相沉积颗粒（17）从该注入孔喷射到成膜基底 ; 以及设置在喷嘴和成膜基板之间的多个控制板（20），并且限制从多个喷射孔喷射的气相沉积颗粒相对于成膜基板的入射角。 喷嘴包括：容器形状的喷嘴主体（14b），其在成膜基板侧的表面上具有开口（14c），和（ii）覆盖开口并分离的多个块体（15） 所述多个块中的每个具有所述多个喷射孔。 上述布置允许以高清晰度形成气相沉积膜图案。

公开(公告)号：US20130291796A1

公开(公告)日：2013-11-07

申请号：US13980875

申请日：2012-01-13

申请人： Satoshi Inoue ,  Shinichi Kawato ,  Tohru Sonoda

发明人： Satoshi Inoue ,  Shinichi Kawato ,  Tohru Sonoda

IPC分类号： C23C16/448 ,  C23C16/04

CPC分类号： C23C16/448 ,  C23C14/243 ,  C23C16/042 ,  G03B37/06 ,  H01L51/0008

摘要： A crucible (50) of the present invention includes: an opening (55a) from which vapor deposition particles are injected toward a film formation substrate on which a film is to be formed; a focal point member (54a), provided so as to face the opening (55a), which reflects vapor deposition particles injected from the opening (55a); and a revolution paraboloid (55b) which reflects, toward the film formation substrate, vapor deposition particles which have been reflected by the focal point member (54a).

摘要翻译： 本发明的坩埚（50）包括：朝向要在其上形成膜的成膜基板上注入蒸镀颗粒的开口（55a） 设置成面对开口（55a）的焦点部件（54a），其反射从开口（55a）喷射的气相沉积粒子; 以及向所述成膜基板反射已被所述焦点部件（54a）反射的气相沉积粒子的旋转抛物面（55b）。

公开(公告)号：US20130280840A1

公开(公告)日：2013-10-24

申请号：US13997173

申请日：2011-12-19

申请人： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

发明人： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

IPC分类号： H01L51/56 ,  H01L21/02

CPC分类号： C23C16/45578 ,  C23C14/24 ,  C23C14/243 ,  H01L21/02263 ,  H01L51/001 ,  H01L51/56 ,  H05B33/10

摘要： A vapor deposition device (50) in accordance with the present invention is a vapor deposition device for forming a film on a film formation substrate (60), the vapor deposition device including a vapor deposition source (80) that has an injection hole (81) from which vapor deposition particles are injected, a vapor deposition particle crucible (82) for supplying the vapor deposition particles to the vapor deposition source (80), and a rotation motor (86) for changing a distribution of the injection amount of the vapor deposition particles by rotating the vapor deposition source (80).

摘要翻译： 根据本发明的蒸镀装置（50）是在成膜基板（60）上形成膜的蒸镀装置，其特征在于，所述蒸镀装置具有：蒸镀源（80），具有喷射孔 ），用于将气相沉积粒子供给到气相沉积源（80）的气相沉积粒子坩埚（82）和用于改变蒸汽喷射量分布的旋转马达（86） 通过旋转气相沉积源（80）来沉积颗粒。

公开(公告)号：US20130276701A1

公开(公告)日：2013-10-24

申请号：US13976443

申请日：2011-12-20

申请人： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

发明人： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

IPC分类号： H01L31/18

CPC分类号： C23C16/4401 ,  C12M33/00 ,  C23C14/564 ,  H01L31/186 ,  H01L51/0011

摘要： A Film (7) is provided on at least a part of a surface of each of a vapor deposition preventing plate (3) and a shutter (4) of a vacuum chamber (5) on which surface vapor deposition particles are vapor-deposited, the film (7) being provided so as to be peeled off from the each of the vapor deposition preventing plate (3) and the shutter (4), and the film being made of a material differing in at least one of a melting point, a sublimation point, solubility in a given solvent, microbial biodegradability, and photodegradability from a material of which a vapor-deposited film that is formed on the film (7) is made.

摘要翻译： 在气相沉积颗粒被蒸镀的真空室（5）的气相沉积防止板（3）和快门（4）的每一个的表面的至少一部分上提供膜（7） 薄膜（7）设置成从每个防蒸镀板（3）和活门（4）上剥离，并且该薄膜由不同于熔点， 升华点，在给定溶剂中的溶解度，微生物生物降解性和由形成在膜（7）上的气相沉积膜的材料的光降解性）。

公开(公告)号：US20130199445A1

公开(公告)日：2013-08-08

申请号：US13879761

申请日：2011-10-12

申请人： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue

发明人： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue

IPC分类号： C23C16/04

CPC分类号： H01L51/0011 ,  C23C14/042 ,  C23C14/12 ,  C23C14/24 ,  C23C14/50 ,  C23C16/042 ,  H01L27/3211 ,  H01L27/3244 ,  H01L51/001 ,  H01L51/56 ,  H01L2227/323 ,  H05B33/10

摘要： A vapor deposition device (50) disclosed, a partition wall (26) standing between film formation regions on a film formation substrate (200), includes: a mask unit (80) including a shadow mask (81) and a vapor deposition source (85) fixed in position relative to each other; contacting means for bringing the film formation substrate (200) and the shadow mask (81) into contact with each other at the partition wall (26); and moving means for moving at least a first one of the mask unit (80) and the film formation substrate (200) relative to a second one thereof in a state in which the contact caused by the contacting means is kept.

摘要翻译： 一种蒸镀装置（50），其特征在于，在成膜基板（200）上的成膜区域之间配置有分隔壁（26），所述分隔壁包括：荫罩单元（80），其包括荫罩（81）和气相沉积源 85）相对于彼此固定在适当位置; 用于使成膜基板（200）和荫罩（81）在分隔壁（26）处相互接触的接触装置; 以及用于在保持由接触装置引起的接触的状态下相对于其第二个移动掩模单元（80）和成膜基板（200）中的至少第一个的移动装置。

公开(公告)号：US07558306B2

公开(公告)日：2009-07-07

申请号：US11134519

申请日：2005-05-23

申请人： Masanori Watanabe ,  Shinichi Kawato ,  Mitsuhiro Matsumoto

发明人： Masanori Watanabe ,  Shinichi Kawato ,  Mitsuhiro Matsumoto

IPC分类号： H01S5/00

CPC分类号： H01S5/2231 ,  B82Y20/00 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/0425 ,  H01S5/1014 ,  H01S5/1039 ,  H01S5/162 ,  H01S5/168 ,  H01S5/2022 ,  H01S5/2214 ,  H01S5/2219 ,  H01S5/3211 ,  H01S5/34326 ,  H01S5/3436 ,  H01S2301/18

摘要： In a semiconductor laser device of the invention, a ridge portion 150 forms a waveguide, and guided light goes along the ridge portion 150. A tail of the guided layer is present also at first side portions 151, while second side portions 152 are regions which the tail of the guided light does not reach. Meanwhile, scattered light generated from the ridge portion 150 goes through the first side portions 15, spreading into the second side portions 152. In the second side portions 152, a light absorption layer 127 serving as a light absorber is formed on the first upper clad layer 108, where the scattered light is absorbed. As a result of the absorption of scattered light in the second side portions 152, ripples of radiation light are reduced. Also since the light absorption layer 127 is in electrical contact with a p-side ohmic electrode 125, the problem of charge accumulation to the light absorption layer 127 can be avoided.

摘要翻译： 在本发明的半导体激光装置中，脊部150形成波导管，导光部沿着脊部150延伸。被引导层的尾部也存在于第一侧部151，而第二侧部152是 引导灯的尾巴没有达到。 同时，从脊部150产生的散射光穿过第一侧部15，扩展到第二侧部152.在第二侧部152中，作为光吸收体的光吸收层127形成在第一上部包层 层108，其中散射的光被吸收。 作为第二侧部152中散射光的吸收的结果，辐射光的波纹减小。 此外，由于光吸收层127与p侧欧姆电极125电接触，因此可以避免对光吸收层127的电荷积聚的问题。

公开(公告)号：US09622319B2

公开(公告)日：2017-04-11

申请号：US13980571

申请日：2012-01-13

申请人： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

发明人： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

IPC分类号： H05B33/14 ,  H01L27/32 ,  H01L51/56 ,  H01L51/00 ,  C23C14/04 ,  C23C14/54

CPC分类号： H05B33/145 ,  C23C14/042 ,  C23C14/54 ,  H01L27/3211 ,  H01L27/3244 ,  H01L51/0002 ,  H01L51/56 ,  H01L2251/558 ,  Y10T428/24612

摘要： A film formation substrate is arranged such that (i) a base end, in a y-axis direction, of a film-thickness-gradually-diminishing part of a first film overlaps a first film formation region, and (ii) a film-thickness-gradually-diminishing part of a second film is disposed on an outside, in the y-axis direction, of a second film formation region and overlaps the film-thickness-gradually-diminishing part of the first film so as to compensate for a gradually diminished thickness of the film-thickness-gradually-diminishing part.

公开(公告)号：US09458532B2

公开(公告)日：2016-10-04

申请号：US13395879

申请日：2010-09-10

申请人： Tohru Sonoda ,  Nobuhiro Hayashi ,  Shinichi Kawato

发明人： Tohru Sonoda ,  Nobuhiro Hayashi ,  Shinichi Kawato

IPC分类号： B05B15/04 ,  B05C11/11 ,  C23C14/12 ,  C23C14/04 ,  H01L51/00 ,  H01L51/56

CPC分类号： H01L51/56 ,  C23C14/042 ,  C23C14/12 ,  H01L51/0011

摘要： The present invention (i) uses a mask unit (80) including: a shadow mask (81) that has an opening (82) and that is smaller in area than a vapor deposition region (210) of a film formation substrate (200) and; a vapor deposition source (85) that has a emission hole (86) for emitting a vapor deposition particle, the emission hole (86) being provided so as to face the shadow mask (81), the shadow mask (81) and the vapor deposition source (85) being fixed in position relative to each other, (ii) adjusts an amount of a void between the shadow mask (81) and the film formation substrate (200), (iii) moves at least a first one of the mask unit (80) and the film formation substrate (200) relative to a second one thereof while uniformly maintaining the amount of the void between the mask unit (80) and the film formation substrate (200), and (iv) sequentially deposit the vapor deposition particle onto the vapor deposition region (210) through the opening (82) of the shadow mask (81). This makes it possible to form a high-resolution vapor deposition pattern on a large-sized substrate.

摘要翻译： 本发明（i）使用掩模单元（80），其包括：具有开口（82）并且面积小于成膜基板（200）的气相沉积区域（210）的荫罩（81） 和; 具有用于发射气相沉积粒子的发射孔（86）的蒸气源（85），所述发射孔（86）设置成面对荫罩（81），荫罩（81）和蒸气 沉积源（85）相对于彼此固定在适当位置，（ii）调节荫罩（81）和成膜基底（200）之间的空隙量，（iii）移动至少第一个 掩模单元（80）和成膜基板（200），同时均匀地保持掩模单元（80）和成膜基板（200）之间的空隙量，并且（iv）顺序地将 气相沉积颗粒通过荫罩（81）的开口（82）到蒸镀区域（210）上。 这使得可以在大尺寸基板上形成高分辨率气相沉积图案。

公开(公告)号：US09231210B2

公开(公告)日：2016-01-05

申请号：US13696585

申请日：2011-05-02

申请人： Shinichi Kawato ,  Nobuhiro Hayashi ,  Tohru Sonoda ,  Satoshi Inoue

发明人： Shinichi Kawato ,  Nobuhiro Hayashi ,  Tohru Sonoda ,  Satoshi Inoue

IPC分类号： H05B33/10 ,  H01L51/00 ,  C23C14/04 ,  C23C14/12 ,  C23C14/24 ,  H01L27/32 ,  H01L51/56

CPC分类号： H01L51/001 ,  C23C14/042 ,  C23C14/12 ,  C23C14/24 ,  H01L27/3211 ,  H01L51/56

摘要： A vapor deposition source (60), a plurality of limiting plates (81) and a vapor deposition mask (70) are disposed in this order. A substrate spaced apart from the vapor deposition mask at a fixed interval is moved relative to the vapor deposition mask. Vapor deposition particles (91) discharged from vapor deposition source openings (61) of the vapor deposition source pass through between neighboring limiting plates, pass through mask openings (71) formed in the vapor deposition mask, and adhere to the substrate, whereby coating films (90) are formed. The limiting plates limit the incidence angle of the vapor deposition particles that enter the mask openings, as viewed in the relative movement direction of the substrate. In this way, an organic EL element can be formed on a large-sized substrate without increasing the pixel pitch or reducing the aperture ratio.

摘要翻译： 蒸镀源（60），多个限制板（81）和气相沉积掩模（70）按此顺序设置。 以固定间隔与蒸镀掩模间隔开的基板相对于蒸镀掩模移动。 从气相沉积源的蒸镀源开口（61）排出的蒸镀颗粒（91）通过相邻的限制板之间通过形成在蒸镀掩模中的掩模开口（71），并附着在基板上， （90）。 限制板限制了进入掩模开口的气相沉积颗粒的入射角，如在基板的相对移动方向上所看到的。 以这种方式，可以在大尺寸基板上形成有机EL元件，而不增加像素间距或降低开口率。