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公开(公告)号：US20060007976A1
公开(公告)日：2006-01-12
申请号：US11134519
申请日：2005-05-23
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/028 , H01S5/0287 , H01S5/0425 , H01S5/1014 , H01S5/1039 , H01S5/162 , H01S5/168 , H01S5/2022 , H01S5/2214 , H01S5/2219 , H01S5/3211 , H01S5/34326 , H01S5/3436 , H01S2301/18
摘要： In a semiconductor laser device of the invention, a ridge portion 150 forms a waveguide, and guided light goes along the ridge portion 150. A tail of the guided layer is present also at first side portions 151, while second side portions 152 are regions which the tail of the guided light does not reach. Meanwhile, scattered light generated from the ridge portion 150 goes through the first side portions 15, spreading into the second side portions 152. In the second side portions 152, a light absorption layer 127 serving as a light absorber is formed on the first upper clad layer 108, where the scattered light is absorbed. As a result of the absorption of scattered light in the second side portions 152, ripples of radiation light are reduced. Also since the light absorption layer 127 is in electrical contact with a p-side ohmic electrode 125, the problem of charge accumulation to the light absorption layer 127 can be avoided.
摘要翻译： 在本发明的半导体激光装置中，脊部150形成波导，导向光沿着脊部150。 引导层的尾部还存在于第一侧部151处，而第二侧部152是导光的尾部未到达的区域。 同时，从脊部150产生的散射光穿过第一侧部15，扩展到第二侧部152。 在第二侧部152中，在吸收散射光的第一上覆盖层108上形成有作为光吸收体的光吸收层127。 作为第二侧部152中散射光的吸收的结果，辐射光的波纹减小。 此外，由于光吸收层127与p侧欧姆电极125电接触，因此可以避免对光吸收层127的电荷积聚的问题。
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公开(公告)号：US07558306B2
公开(公告)日：2009-07-07
申请号：US11134519
申请日：2005-05-23
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/028 , H01S5/0287 , H01S5/0425 , H01S5/1014 , H01S5/1039 , H01S5/162 , H01S5/168 , H01S5/2022 , H01S5/2214 , H01S5/2219 , H01S5/3211 , H01S5/34326 , H01S5/3436 , H01S2301/18
摘要： In a semiconductor laser device of the invention, a ridge portion 150 forms a waveguide, and guided light goes along the ridge portion 150. A tail of the guided layer is present also at first side portions 151, while second side portions 152 are regions which the tail of the guided light does not reach. Meanwhile, scattered light generated from the ridge portion 150 goes through the first side portions 15, spreading into the second side portions 152. In the second side portions 152, a light absorption layer 127 serving as a light absorber is formed on the first upper clad layer 108, where the scattered light is absorbed. As a result of the absorption of scattered light in the second side portions 152, ripples of radiation light are reduced. Also since the light absorption layer 127 is in electrical contact with a p-side ohmic electrode 125, the problem of charge accumulation to the light absorption layer 127 can be avoided.
摘要翻译： 在本发明的半导体激光装置中，脊部150形成波导管，导光部沿着脊部150延伸。被引导层的尾部也存在于第一侧部151，而第二侧部152是 引导灯的尾巴没有达到。 同时，从脊部150产生的散射光穿过第一侧部15，扩展到第二侧部152.在第二侧部152中，作为光吸收体的光吸收层127形成在第一上部包层 层108，其中散射的光被吸收。 作为第二侧部152中散射光的吸收的结果，辐射光的波纹减小。 此外，由于光吸收层127与p侧欧姆电极125电接触，因此可以避免对光吸收层127的电荷积聚的问题。
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公开(公告)号：US06876002B2
公开(公告)日：2005-04-05
申请号：US10129549
申请日：2001-07-03
CPC分类号： H01S5/16 , H01S5/162 , H01S5/168 , H01S5/2231
摘要： A semiconductor laser element includes, on a substrate, at least a first conductive type first clad layer, an active layer, a second conductive type second clad layer, a current block layer having a stripe-shaped deficient portion extending in a direction of a resonator, a second conductive type third clad layer buried in the stripe-shaped deficient portion of the current block layer and a second conductive type protection layer provided on the third clad layer. The active layer includes at least a window region adjacent to its one end surface and an internal region having a quantum well structure, and a portion opposite to the internal region is irradiated with an ionized atom from a surface of a layer arranged on the second conductive type second clad layer side and thereafter subjected to heat treatment to form the window region. A peak wavelength λw of photoluminescence from the window region of the active layer has a relation of: λw≦λi−5 nm with respect to a peak wavelength λi of photoluminescence from the internal region of the active layer, and a half-width of the photoluminescence from the window region is narrower than a half-width of the photoluminescence from the internal region.
摘要翻译： 半导体激光元件在基板上包括至少第一导电型第一覆盖层，有源层，第二导电型第二覆盖层，具有在谐振器的方向上延伸的条状缺陷部的电流阻挡层 埋置在当前阻挡层的条形缺陷部分中的第二导电型第三覆盖层和设置在第三覆盖层上的第二导电型保护层。 活性层至少包括与其一个端面相邻的窗口区域和具有量子阱结构的内部区域，并且与内部区域相反的部分被照射来自布置在第二导电层上的层的表面的电离原子 然后进行热处理以形成窗口区域。 来自有源层的窗口区域的光致发光的峰值波长长度与来自有源层的内部区域的光致发光的峰值波长范围有关，并且来自窗口区域的光致发光的半峰宽是 窄于来自内部区域的光致发光的半宽度。
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公开(公告)号：US20050069004A1
公开(公告)日：2005-03-31
申请号：US10949536
申请日：2004-09-23
IPC分类号： H01S5/20 , B82Y20/00 , H01S5/00 , H01S5/028 , H01S5/16 , H01S5/22 , H01S5/223 , H01S5/32 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/028 , H01S5/0287 , H01S5/162 , H01S5/2206 , H01S5/2231 , H01S5/3211 , H01S5/3213 , H01S5/34326 , H01S5/3436 , H01S2301/173 , H01S2301/18
摘要： The present invention provides a semiconductor laser including a lower clad layer, an active layer including at least one quantum well layer, and an upper clad layer formed in this order above a semiconductor substrate, and having a window region including a portion in which the quantum well layer in the active layer and layers adjacent to the active layer are intermixed in the vicinity of a light emitting end face perpendicular to the surface of the semiconductor substrate, in which the lower clad layer has a refractive index higher than that of the upper clad layer, and the light intensity distribution in the window region spreads more widely in the direction perpendicular to the surface of the semiconductor substrate than the light intensity distribution in the gain region, and also provides a method for fabricating such a semiconductor laser.
摘要翻译： 本发明提供了一种半导体激光器，其包括下覆盖层，包括至少一个量子阱层的有源层和在半导体衬底上方依次形成的上覆盖层，并且具有包括部分的窗口区域，其中量子 有源层中的阱层和与有源层相邻的层在与半导体衬底的表面垂直的发光端面附近混合，其中下覆盖层的折射率高于上覆层的折射率 层，并且窗口区域中的光强度分布在垂直于半导体衬底的表面的方向上比在增益区域中的光强度分布更广泛地扩展，并且还提供了制造这种半导体激光器的方法。
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公开(公告)号：US5228047A
公开(公告)日：1993-07-13
申请号：US762769
申请日：1991-09-20
申请人： Mitsuhiro Matsumoto , Kazuaki Sasaki , Masaki Kondo , Tadashi Takeoka , Hiroshi Nakatsu , Masanori Watanabe , Osamu Yamamoto , Saburo Yamamoto
发明人： Mitsuhiro Matsumoto , Kazuaki Sasaki , Masaki Kondo , Tadashi Takeoka , Hiroshi Nakatsu , Masanori Watanabe , Osamu Yamamoto , Saburo Yamamoto
IPC分类号： H01L33/00 , H01S5/02 , H01S5/028 , H01S5/10 , H01S5/16 , H01S5/20 , H01S5/22 , H01S5/32 , H01S5/323
CPC分类号： H01S5/164 , H01L33/0062 , H01S2301/18 , H01S5/0201 , H01S5/0202 , H01S5/028 , H01S5/0281 , H01S5/0282 , H01S5/1064 , H01S5/204 , H01S5/2211 , H01S5/222 , H01S5/3201 , H01S5/32316 , H01S5/32325
摘要： A semiconductor laser device is provided which is constituted by semiconductor materials so as to emit laser light from a cavity end facet, the laser light being excited in a waveguide within an active layer sandwiched between a pair of cladding layers, wherein a window layer made of a semiconductor material having a band gap greater than that of the active layer is formed on the cavity end facet from which the laser light is emitted, so as to have a thickness sufficient to prevent local generation of crystal defects by lattice mismatching between the semiconductor material of the window layer and the semiconductor materials at the cavity end facet. There is also provided a method for producing such a semiconductor laser device with high efficiency.
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公开(公告)号：US5571750A
公开(公告)日：1996-11-05
申请号：US314585
申请日：1994-09-28
CPC分类号： H01S5/0425 , H01S5/164 , H01S5/0201 , H01S5/0281 , Y10S148/026 , Y10S148/095 , Y10S148/104 , Y10S148/106 , Y10S148/143 , Y10S438/945
摘要： A method for producing a semiconductor laser device includes the steps of: forming window layers on either one of a top surface of an internal structure or a reverse surface of a substrate and on light-emitting end facets of the internal structure; forming a reflection film on the light-emitting end facets; removing the window layer formed on either one of the top surface or the reverse surface by using an etchant which hardly etches the reflection film; and forming electrodes on the surface from which the window layer is removed by etching and on the other surface. Another method for producing a semiconductor laser device includes the steps of: forming window layers on light-emitting end facets of the bars; inserting the bars into an apparatus having openings for forming electrodes and a supporting portion for preventing a positional shift between the bars and the openings, and forming the electrodes on the top surfaces and the reverse surfaces of the bars; and cutting the bars into the chips.
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公开(公告)号：US07362788B2
公开(公告)日：2008-04-22
申请号：US10949536
申请日：2004-09-23
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/028 , H01S5/0287 , H01S5/162 , H01S5/2206 , H01S5/2231 , H01S5/3211 , H01S5/3213 , H01S5/34326 , H01S5/3436 , H01S2301/173 , H01S2301/18
摘要： The present invention provides a semiconductor laser including a lower clad layer, an active layer including at least one quantum well layer, and an upper clad layer formed in this order above a semiconductor substrate, and having a window region including a portion in which the quantum well layer in the active layer and layers adjacent to the active layer are intermixed in the vicinity of a light emitting end face perpendicular to the surface of the semiconductor substrate, in which the lower clad layer has a refractive index higher than that of the upper clad layer, and the light intensity distribution in the window region spreads more widely in the direction perpendicular to the surface of the semiconductor substrate than the light intensity distribution in the gain region, and also provides a method for fabricating such a semiconductor laser.
摘要翻译： 本发明提供了一种半导体激光器，其包括下覆盖层，包括至少一个量子阱层的有源层和在半导体衬底上方依次形成的上覆盖层，并且具有包括部分的窗口区域，其中量子 有源层中的阱层和与有源层相邻的层在与半导体衬底的表面垂直的发光端面附近混合，其中下覆盖层的折射率高于上覆层的折射率 层，并且窗口区域中的光强度分布在垂直于半导体衬底的表面的方向上比在增益区域中的光强度分布更广泛地扩展，并且还提供了制造这种半导体激光器的方法。
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公开(公告)号：US5413956A
公开(公告)日：1995-05-09
申请号：US995064
申请日：1992-12-22
CPC分类号： H01S5/0425 , H01S5/164 , H01S5/0201 , H01S5/0281 , Y10S148/026 , Y10S148/095 , Y10S148/104 , Y10S148/106 , Y10S148/143 , Y10S438/945
摘要： A method for producing a semiconductor laser device includes the steps of: forming window layers on either one of a top surface of an internal structure or a reverse surface of a substrate and on light-emitting end facets of the internal structure; forming a reflection film on the light-emitting end facets; removing the window layer formed on either one of the top surface or the reverse surface by using an etchant which hardly etches the reflection film; and forming electrodes on the surface from which the window layer is removed by etching and on the other surface. Another method for producing a semiconductor laser device includes the steps of: forming window layers on light-emitting end facets of the bars; inserting the bars into an apparatus having openings for forming electrodes and a supporting portion for preventing a positional shift between the bars and the openings, and forming the electrodes on the top surfaces and the reverse surfaces of the bars; and cutting the bars into the chips.
摘要翻译： 一种制造半导体激光器件的方法包括以下步骤：在内部结构的顶表面或衬底的反面中的任一个上以及在内部结构的发光端面上形成窗口层; 在发光端面上形成反射膜; 通过使用几乎不蚀刻反射膜的蚀刻剂去除形成在顶表面或反面中的任一个上的窗口层; 以及在通过蚀刻除去窗口层的表面上和在另一个表面上形成电极。 制造半导体激光器件的另一种方法包括以下步骤：在棒的发光端面形成窗口层; 将棒插入具有用于形成电极的开口的装置和用于防止棒和开口之间的位置偏移的支撑部分，以及在棒的顶表面和反面上形成电极; 并将条切成芯片。
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公开(公告)号：US5309001A
公开(公告)日：1994-05-03
申请号：US980666
申请日：1992-11-24
申请人： Masanori Watanabe , Mitsuhiro Matsumoto , Hiroshi Nakatsu , Tadashi Takeoka , Osamu Yamamoto , Kazuaki Sasaki
发明人： Masanori Watanabe , Mitsuhiro Matsumoto , Hiroshi Nakatsu , Tadashi Takeoka , Osamu Yamamoto , Kazuaki Sasaki
CPC分类号： H01L33/385 , H01L33/38 , H01L33/20 , H01L33/24
摘要： A surface electrode on a surface of a LED has a pad, and further, at least first-order branches linearly extending from the pad, second-order branches diverged and linearly extending from the first-order branches, and third-order branches diverged and linearly extending from the second-order branches. The pad out of the surface electrode is not in electrical contact with a underlying semiconductor layer, whereas the surface electrode and the semiconductor layer are in electrical contact with each other at ends of the highest-order branches. Also, the semiconductor layer is provided along a pattern of the surface electrode in a mesa shape. Thus, ineffective light emission underneath the surface electrode is relatively reduced so that external quantum efficiency can be improved, and moreover even shorter-wavelength light can be allowed to go out at high efficiency by omitting a current diffusion layer.
摘要翻译： LED的表面上的表面电极具有焊盘，并且至少一级从焊盘线性延伸的分支，二阶分支从一级分支发散并线性延伸，三阶分支发散， 从二阶分支线性延伸。 表面电极中的焊盘不与下面的半导体层电接触，而表面电极和半导体层在最高级分支的端部彼此电接触。 而且，半导体层沿着台面形状的表面电极的图案设置。 因此，表面电极下方的无效光发射相对减少，从而可以提高外部量子效率，而且通过省略电流扩散层，甚至可以通过高效率地允许更短波长的光线出射。
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公开(公告)号：US08897686B2
公开(公告)日：2014-11-25
申请号：US13612284
申请日：2012-09-12
IPC分类号： G03G15/20
CPC分类号： G03G15/2053 , G03G2215/2029
摘要： A fixing device includes a heat assembly including an endless belt, a heat source, an attachment member having an attachment surface and first and second side surfaces, and a slide sheet having first and second end portions that are respectively fixed to a first fixing portion at the first side surface and a second fixing portion at the second side surface, the slide sheet having a larger length from the first end portion to the second end portion than a length of a path of the attachment member extending from the first fixing portion to the second fixing portion through the first side surface, the attachment surface, and the second side surface; and a pressure roller that presses the outer surface of the endless belt to the attachment surface.
摘要翻译： 一种固定装置，包括一个包括环形带，热源，具有附接表面的附接构件和第一和第二侧表面的热组件，以及具有分别固定到第一固定部分上的第一和第二端部的滑动片 所述第一侧表面和所述第二固定部分在所述第二侧表面处，所述滑动片具有从所述第一端部到所述第二端部的长度大于所述附接构件从所述第一固定部延伸到所述第二固定部的路径的长度 通过第一侧表面，附接表面和第二侧表面的第二固定部分; 以及将环形带的外表面按压到附接表面的压力辊。
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