公开(公告)号：US06673518B2

公开(公告)日：2004-01-06

申请号：US10170346

申请日：2002-06-14

申请人： Tsunehiro Nishi ,  Koji Hasegawa ,  Takeshi Kinsho

发明人： Tsunehiro Nishi ,  Koji Hasegawa ,  Takeshi Kinsho

IPC分类号： G03C1492

CPC分类号： G03F7/0395 ,  G03F7/0045 ,  G03F7/0397

摘要： A polymer comprising recurring units of formula (1) wherein R1 is H or methyl, R2 is H or C1-8 alkyl, R3 is hydrogen or CO2R4, and R4 is C1-15 alkyl and recurring units having a carboxylic acid protected with an acid-decomposable protecting group containing an adamantane or tetracyclo-[4.4.0.12,5.17,10]dodecane structure and having a Mw of 1,000-500,000 is novel. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution and etching resistance and lends itself to micropatterning with electron beams or deep-UV.

摘要翻译： 包含式（1）的重复单元的聚合物，其中R 1是H或甲基，R 2是H或C 1-8烷基，R 3是氢或CO 2 R 4，R 4是 C1-15烷基和具有羧酸保护的重复单元，所述羧酸用含有金刚烷或四环 - [4.4.0.1,2.5,1.1,7,10]]十二烷结构的酸可分解保护基团保护，并具有Mw为1,000 -500,000是小说。 包含作为基础树脂的聚合物的抗蚀剂组合物对高能量辐射敏感，具有优异的灵敏度，分辨率和耐蚀刻性，并且适用于电子束或深紫外线的微图案化。

公开(公告)号：US06670094B2

公开(公告)日：2003-12-30

申请号：US10000221

申请日：2001-12-04

申请人： Tsunehiro Nishi ,  Mutsuo Nakashima ,  Tomohiro Kobayashi

发明人： Tsunehiro Nishi ,  Mutsuo Nakashima ,  Tomohiro Kobayashi

IPC分类号： G03F7038

CPC分类号： G03F7/0395 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/111

摘要： A polymer comprising recurring units of formula (1-1) or (1-2) wherein R1 and R2 are H or C1-15 alkyl, R1 and R2, taken together, may form a ring; R3 is H, C1-15 alkyl, acyl or alkylsulfonyl or C2-15 alkoxycarbonyl or alkoxyalkyl which may have halogen substituents, not all R1, R2 and R3 are hydrogen; and k=0 or 1, and having a Mw of 1,000-500,000 is novel. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, etching resistance, and minimized swell and lends itself to micropatterning with electron beams or deep-UV.

摘要翻译： 包含式（1-1）或（1-2）的重复单元的聚合物，其中R 1和R 2是H或C 1-15烷基，R 1和R 2一起可以一起 形成戒指 R 3为H，C 1-15烷基，酰基或烷基磺酰基或可具有卤素取代基的C 2-5烷氧基羰基或烷氧基烷基，并不全部为R 1，R 2和R 3为氢; 并且k = 0或1，并且具有1,000-500,000的Mw是新颖的。 包含作为基础树脂的聚合物的抗蚀剂组合物对高能辐射敏感，具有优异的灵敏度，分辨率，耐腐蚀性和最小化的溶胀，并且使其自身具有电子束或深UV的微图形化。

公开(公告)号：US06531627B2

公开(公告)日：2003-03-11

申请号：US09842007

申请日：2001-04-26

申请人： Tsunehiro Nishi ,  Koji Hasegawa ,  Takeru Watanabe ,  Takeshi Kinsho ,  Mutsuo Nakashima ,  Seiichiro Tachibana ,  Jun Hatakeyama

发明人： Tsunehiro Nishi ,  Koji Hasegawa ,  Takeru Watanabe ,  Takeshi Kinsho ,  Mutsuo Nakashima ,  Seiichiro Tachibana ,  Jun Hatakeyama

IPC分类号： C07C6974

CPC分类号： G03F7/039 ,  C07C69/716 ,  C08G61/08 ,  G03F7/0045

摘要： An ester compound of the following formula (1) is provided. R1 is H, methyl or CH2CO2R3, R2 is H, methyl or CO2R3, R3 is C1-C15 alkyl, R4 is branched or cyclic, tertiary C5-C20 alkyl group, Z is a divalent C1-C10 hydrocarbon group, and k is 0 or 1. A resist composition comprising as the base resin a polymer resulting from the ester compound is sensitive to high-energy radiation, has excellent sensitivity, resolution, and etching resistance, and is suited for micropatterning using electron beams or deep-UV.

摘要翻译： 提供下式（1）的酯化合物：R 1是H，甲基或CH 2 CO 2 R 3，R 2是H，甲基或CO 2 R 3，R 3是C 1 -C 15烷基，R 4是支链或环状的，叔C5-C20烷基，Z 是二价C1-C10烃基，k为0或1.含有由酯化合物得到的聚合物作为基础树脂的抗蚀剂组合物对高能辐射敏感，具有优异的灵敏度，分辨率和耐蚀刻性，以及 适用于使用电子束或深紫外线的微图案。

公开(公告)号：US06524765B1

公开(公告)日：2003-02-25

申请号：US09711311

申请日：2000-11-14

申请人： Tsunehiro Nishi ,  Takeru Watanabe ,  Jun Hatakeyama ,  Takeshi Kinsho ,  Koji Hasegawa ,  Seiichiro Tachibana

发明人： Tsunehiro Nishi ,  Takeru Watanabe ,  Jun Hatakeyama ,  Takeshi Kinsho ,  Koji Hasegawa ,  Seiichiro Tachibana

IPC分类号： G03F720

CPC分类号： G03F7/0045 ,  G03F7/0395 ,  Y10S430/106 ,  Y10S430/111

摘要： A polymer comprising units of formula (1-1) or (1-2) and having a weight average molecular weight of 1,000 to 500,000 is provided. R1 is an acid labile group, R2 is H or straight or branched C1-4 alkyl, Z is a tetravalent C2-10 hydrocarbon group, and k=0 or 1. A resist composition comprising the polymer as a base resin has significantly improved sensitivity, resolution and etching resistance and is very useful in microfabrication.

摘要翻译： 提供了包含式（1-1）或（1-2）单元并且具有1,000至500,000重均分子量的聚合物.R1是酸不稳定基团，R 2是H或直链或支链C 1-4烷基， Z是四价C2-10烃基，k = 0或1.包含聚合物作为基础树脂的抗蚀剂组合物具有显着提高的灵敏度，分辨率和耐蚀刻性，并且在微细加工中非常有用。

公开(公告)号：US06444396B1

公开(公告)日：2002-09-03

申请号：US09630810

申请日：2000-08-02

申请人： Takeru Watanabe ,  Takeshi Kinsho ,  Tsunehiro Nishi ,  Mutsuo Nakashima ,  Koji Hasegawa ,  Jun Hatakeyama

发明人： Takeru Watanabe ,  Takeshi Kinsho ,  Tsunehiro Nishi ,  Mutsuo Nakashima ,  Koji Hasegawa ,  Jun Hatakeyama

IPC分类号： G03F7039

CPC分类号： G03F7/039 ,  C07C69/753 ,  C07C2601/08 ,  C07C2601/10 ,  C07C2601/14 ,  C07C2601/16 ,  C07C2602/42 ,  C07C2603/86 ,  C08F32/08 ,  G03F7/0045 ,  Y02P20/55 ,  Y10S430/106

摘要： A novel ester compound having an alkylcycloalkyl or alkylcycloalkenyl group as the protective group is provided as well as a polymer comprising units of the ester compound. The polymer is used as a base resin to formulate a resist composition having a higher sensitivity, resolution and etching resistance than conventional resist compositions.

摘要翻译： 提供了具有烷基环烷基或烷基环烯基作为保护基的新型酯化合物以及包含酯化合物单元的聚合物。 聚合物用作基础树脂以配制具有比常规抗蚀剂组合物更高的灵敏度，分辨率和耐蚀刻性的抗蚀剂组合物。

公开(公告)号：US6030746A

公开(公告)日：2000-02-29

申请号：US831749

申请日：1997-04-01

申请人： Takeshi Nagata ,  Satoshi Watanabe ,  Tsunehiro Nishi ,  Jun Hatakeyama ,  Shigehiro Nagura ,  Toshinobu Ishihara

发明人： Takeshi Nagata ,  Satoshi Watanabe ,  Tsunehiro Nishi ,  Jun Hatakeyama ,  Shigehiro Nagura ,  Toshinobu Ishihara

IPC分类号： C07C43/205 ,  C07C43/30 ,  C07C43/303 ,  C07C43/315 ,  C07C43/32 ,  C07C69/28 ,  C07C69/30 ,  C07C69/712 ,  C07C69/96 ,  C07F7/06 ,  C07F7/08 ,  C07F7/18 ,  G03F7/004 ,  G03F7/039 ,  H01L21/027

CPC分类号： C07C43/303 ,  C07C69/96 ,  G03F7/0045 ,  C07C2101/14 ,  G03F7/039 ,  Y10S430/118

摘要： Di- or triphenyl monoterpene hydrocarbon derivatives of formula (1) are novel. ##STR1## X is a di- or trivalent monoterpene hydrocarbon group, R.sup.1 to R.sup.3 are hydrogen or an alkyl, alkoxy, alkoxyalkyl, alkenyl or aryl group, R.sup.4 is hydrogen or an acid labile group, at least one R.sup.4 being an acid labile group, letter n is an integer of 1-5, j, k and m are integers of 0-4, n+j+k+m=5, and p is 2 or 3. When used as a dissolution rate regulator, the compound of formula (1) exerts remarkably enhanced dissolution inhibitory effect and minimized light absorption in the deep-UV region. A chemically amplified positive resist composition having the compound of formula (1) blended therein is highly sensitive to actinic radiation such as deep-UV radiation, electron beam and X-ray, especially KrF excimer laser light, and has improved sensitivity, resolution and plasma etching resistance.

摘要翻译： 式（1）的二 - 或三苯基单萜烃衍生物是新颖的。 X是二价或三价单萜烃基，R 1至R 3是氢或烷基，烷氧基，烷氧基烷基，烯基或芳基，R 4是氢或酸不稳定基团，至少一个R 4是酸不稳定基团，字母n 是1-5的整数，j，k和m是0-4，n + j + k + m = 5的整数，p是2或3.当用作溶出速率调节剂时，式 1）在深紫外区域发挥显着增强的溶解抑制作用和最小化的光吸收。 具有其中混合的式（1）化合物的化学放大正性抗蚀剂组合物对光化辐射如深UV辐射，电子束和X射线，特别是KrF准分子激光具有高度敏感性，并且具有改善的灵敏度，分辨率和等离子体 耐腐蚀性。

公开(公告)号：US08367310B2

公开(公告)日：2013-02-05

申请号：US12708196

申请日：2010-02-18

申请人： Takeru Watanabe ,  Masashi Iio ,  Jun Hatakeyama ,  Tsunehiro Nishi ,  Yoshio Kawai

发明人： Takeru Watanabe ,  Masashi Iio ,  Jun Hatakeyama ,  Tsunehiro Nishi ,  Yoshio Kawai

IPC分类号： G03F7/26

CPC分类号： G03F7/0397 ,  G03F7/0035 ,  G03F7/40

摘要： A patterning process includes (1) coating and baking a first positive resist composition to form a first resist film, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) applying a resist-modifying composition to the first resist pattern and heating to modify the first resist pattern, (3) coating and baking a second positive resist composition to form a second resist film, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The modified first resist film has a contact angle with pure water of 50°-85°.

摘要翻译： 图案化工艺包括（1）涂覆和烘烤第一正性抗蚀剂组合物以形成第一抗蚀剂膜，曝光，曝光后烘烤和碱显影以形成第一抗蚀剂图案，（2）将抗蚀剂改性组合物施加到 第一抗蚀剂图案和加热以修饰第一抗蚀剂图案，（3）涂覆和烘烤第二正性抗蚀剂组合物以形成第二抗蚀剂膜，曝光，曝光后烘烤和碱显影以形成第二抗蚀剂图案。 改性的第一抗蚀剂膜与纯水的接触角为50°-85°。

公开(公告)号：US08129099B2

公开(公告)日：2012-03-06

申请号：US12370901

申请日：2009-02-13

申请人： Katsuya Takemura ,  Jun Hatakeyama ,  Tsunehiro Nishi ,  Kazuhiro Katayama ,  Toshinobu Ishihara

发明人： Katsuya Takemura ,  Jun Hatakeyama ,  Tsunehiro Nishi ,  Kazuhiro Katayama ,  Toshinobu Ishihara

IPC分类号： G03F7/24 ,  G03F7/40 ,  G03F7/039 ,  G03F7/075

CPC分类号： H01L21/0337 ,  G03F7/0035 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/0757 ,  G03F7/11 ,  G03F7/40 ,  H01L21/0338

摘要： Double patterns are formed by coating a first chemically amplified positive resist composition comprising an acid labile group-bearing resin and a photoacid generator and prebaking to form a resist film on a processable substrate, exposing the resist film to high-energy radiation, PEB, and developing with an alkaline developer to form a first positive resist pattern, treating the first resist pattern to be alkali soluble and solvent resistant, coating a second resist composition and prebaking to form a reversal film, and exposing the reversal film to high-energy radiation, PEB, and developing with an alkaline developer to form a second positive resist pattern. The last development step includes dissolving away the reversed first resist pattern and achieving reversal transfer.

摘要翻译： 通过涂布第一化学放大的正型抗蚀剂组合物形成双重图案，该组合物包含含酸不稳定基团的树脂和光酸产生剂，并且预烘烤以在可加工的基材上形成抗蚀剂膜，将抗蚀剂膜暴露于高能辐射，PEB和 用碱性显影剂显影以形成第一正性抗蚀剂图案，将第一抗蚀剂图案处理为碱溶性和耐溶剂性，涂覆第二抗蚀剂组合物和预烘烤以形成反转膜，并将反转膜暴露于高能量辐射， PEB，并用碱性显影剂显影以形成第二正性抗蚀剂图案。 最后的发展步骤包括将反转的第一抗蚀剂图案溶解并实现反转印。

公开(公告)号：US07985528B2

公开(公告)日：2011-07-26

申请号：US12548866

申请日：2009-08-27

申请人： Tsunehiro Nishi ,  Takeshi Kinsho ,  Masaki Ohashi ,  Koji Hasegawa ,  Masashi Iio

发明人： Tsunehiro Nishi ,  Takeshi Kinsho ,  Masaki Ohashi ,  Koji Hasegawa ,  Masashi Iio

IPC分类号： G03F7/004 ,  G03F7/30

CPC分类号： G03F7/0397 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0395 ,  G03F7/2041 ,  Y10S430/108 ,  Y10S430/111

摘要： A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising recurring units containing a non-leaving hydroxyl group represented by formula (1) wherein R1 is H, methyl or trifluoromethyl, m is 1 or 2, and the hydroxyl group attaches to a tertiary carbon atom. The composition is improved in resolution when processed by lithography.

摘要翻译： 正型抗蚀剂组合物包含（A）在酸的作用下变得可溶于碱性显影剂的树脂组分和（B）酸产生剂。 树脂（A）是包含由式（1）表示的不含离去羟基的重复单元的聚合物，其中R 1是H，甲基或三氟甲基，m是1或2，羟基连​​接到叔碳原子上。 当通过光刻处理时，组合物的分辨率得到改善。

公开(公告)号：US20100297563A1

公开(公告)日：2010-11-25

申请号：US12785930

申请日：2010-05-24

申请人： Takeru Watanabe ,  Kazuhiro Katayama ,  Masashi Iio ,  Jun Hatakeyama ,  Tsunehiro Nishi ,  Takeshi Kinsho

发明人： Takeru Watanabe ,  Kazuhiro Katayama ,  Masashi Iio ,  Jun Hatakeyama ,  Tsunehiro Nishi ,  Takeshi Kinsho

IPC分类号： G03F7/20

CPC分类号： G03F7/0035 ,  G03F7/40 ,  H01L21/0273

摘要： A patterning process includes (1) coating a first positive resist composition onto a substrate, baking, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) coating a resist-modifying composition onto the first resist pattern and heating to effect modifying treatment, and (3) coating a second positive resist composition, baking, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The resist modifying composition comprises a base resin comprising recurring units having formula (1) wherein A1 is alkylene, R1 is H or methyl, R2 is alkyl or bond together to form a nitrogen-containing heterocycle, and an alcohol-based solvent.

摘要翻译： 图案化工艺包括（1）将第一正性抗蚀剂组合物涂覆在基材上，烘烤，曝光，曝光后烘烤和碱显影以形成第一抗蚀剂图案，（2）将抗蚀剂改性组合物涂覆到第一抗蚀剂图案上 加热进行改性处理，（3）涂布第二正性抗蚀剂组合物，烘烤，曝光，曝光后烘烤和碱显影以形成第二抗蚀剂图案。 抗蚀剂改性组合物包括含有式（1）的重复单元的基础树脂，其中A1是亚烷基，R1是H或甲基，R2是烷基或键合在一起形成含氮杂环，和醇类溶剂。